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1. 发明授权

US06180292B2 Structure and manufacture of X-ray mask pellicle with washer-shaped member 失效
标题翻译：具有垫圈构件的X射线掩模防护薄膜的结构和制造
公开(公告)号：US06180292B2
公开(公告)日：2001-01-30
申请号：US09335536
申请日：1999-06-18
申请人： Raul Edmundo Acosta , Marie Angelopoulos , Steven Allen Cordes
发明人： Raul Edmundo Acosta , Marie Angelopoulos , Steven Allen Cordes
IPC分类号： G03F900
CPC分类号： G03F1/22 , G03F1/62 , G03F1/64 , Y10S430/167
摘要： A precise thickness bulk etchable wafer material, that is responsive to protection with an oxide that inhibits insertion of an etch responsiveness altering material, is assembled with a membrane material that is susceptible to deposition processes. A bulk etch then removes most of the wafer. The arrangement permits the strength and rigidity of the bulk spacer to serve to permit the finely controllable deposition processes for ultra thin and wider ranges of membrane materials, the selective protection for spacer shaping and finally, the removal by the low stress process of etching, of the unused bulk spacer material. An oxide layer is patterned on a bulk spacer material wafer that has a thickness of the gap between an X-ray mask and the to be patterned oxide. The oxide on the bulk spacer material prevents conversion, through the exposed surface of the bulk spacer material wafer, of a portion of the wafer that is to serve as the spacer to a different etch responsiveness from that of the bulk spacer material. The exposed bulk spacer material wafer is converted to a depth that will serve as the spacer and to protect the edges. The oxide is then removed. The membrane is deposited over the full surface of the bulk spacer material. The bulk wafer is removed down to the converted portion using the imparted different etch responsivness.
摘要翻译：使用易于沉积工艺的膜材料组装精确厚度的可块状可蚀刻晶片材料，该晶片材料响应于防止蚀刻反应性改变材料插入的氧化物的保护。体蚀刻然后去除大部分晶片。该布置允许散装隔板的强度和刚度用于允许对薄膜材料的超薄和更宽范围的精细可控的沉积工艺，用于间隔件成形的选择性保护以及最终通过蚀刻的低应力过程的去除未使用的散装隔板材料。将氧化物层图案化在具有X射线掩模和待图案化氧化物之间的间隙厚度的块状间隔物材料晶片上。块状隔离物材料上的氧化物防止了通过体隔片材料晶片的暴露表面将用作间隔物的晶片的一部分与块状间隔物材料的不同的蚀刻响应性的转换。将暴露的块状间隔材料晶片转换成将用作间隔物并保护边缘的深度。然后除去氧化物。膜沉积在整块隔板材料的整个表面上。使用赋予的不同蚀刻响应将体晶片除去到转化部分。

2. 发明申请

US20130017486A1 PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS 有权
标题翻译：使用抗反射材料制作光刻结构的方法
公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/004 , B32B7/02 , B32B27/06 , G03F7/20
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

3. 发明授权

US08293454B2 Process of making a lithographic structure using antireflective materials 有权
标题翻译：使用抗反射材料制作平版印刷结构的工艺
公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： B32B9/04 , G03F7/075
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译：一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。本发明还涉及制备光刻结构的方法。

4. 发明授权

US07902323B1 Methods of fabricating plasticized, antiplasticized and crystalline conducting polymers and precursors thereof 有权
标题翻译：制造增塑的，抗增塑的和结晶的导电聚合物及其前体的方法
公开(公告)号：US07902323B1
公开(公告)日：2011-03-08
申请号：US09346353
申请日：1999-07-02
申请人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
发明人： Marie Angelopoulos , Yun-Hsin Liao , Ravi F. Saraf
IPC分类号： C08J3/11 , C08J3/18 , C08G73/00 , H01B1/12
CPC分类号： H01B1/128 , C08G61/12
摘要： Methods of forming materials containing precursors to electrically conductive polymers and electrically conductive polymers are described which have a high degree of crystallinity. The high degree of crystallinity is achieved by preparing the materials under conditions which provide a high degree of mobility to the polymer molecules permitting them to associate with one another to form a crystalline state. High levels of electrical conductivity are achieved in in the electrically conductive materials without stretch orienting the material. The enhanced electrical conductivity is isotropic as compared to a stretch oriented film which has isotropic electrical conductivity. In the preferred embodiment, additives are added to a solution containing a solvent and the precursor or electrically conductive polymer. The additives are preferably plasticizer of diluents. As the solvent is removed the material dries and contains a higher degree of crystallinity than in the absence of the additive.
摘要翻译：描述了形成具有高结晶度的导电聚合物和导电聚合物前体的材料的方法。通过在允许它们彼此结合以形成结晶状态的聚合物分子提供高度迁移率的条件下制备材料来实现高结晶度。在导电材料中实现高水平的导电性而不使材料拉伸定向。与具有各向同性电导率的拉伸取向膜相比，增强的导电性是各向同性的。在优选的实施方案中，将添加剂加入到含有溶剂和前体或导电聚合物的溶液中。添加剂优选稀释剂的增塑剂。当除去溶剂时，与没有添加剂相比，材料干燥并含有更高的结晶度。

5. 发明授权

US07168224B2 Method of making a packaged radiation sensitive resist film-coated workpiece 有权
标题翻译：制造辐射敏感抗蚀剂膜涂层工件的方法
公开(公告)号：US07168224B2
公开(公告)日：2007-01-30
申请号：US10295595
申请日：2002-11-15
申请人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
发明人： Marie Angelopoulos , Wu-Song Huang , Ranee Wai-Ling Kwong , David Robert Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo , Herman Russell Wendt , Christopher Karl Magg
IPC分类号： B65B29/00
CPC分类号： G03F7/0012
摘要： The present invention includes a packaged coated workpiece. The packaged coated workpiece has: (1) a workpiece coated with a resist film sensitive to optical radiation, particulates or chemical contaminants; (2) an inner barrier sealed to enclose the coated workpiece and optionally a first getter agent, to produce a sealed first enclosure; and (3) an outer barrier sealed to enclose the sealed first enclosure and optionally a second getter agent, provided that the packaged coated workpiece has at least one getter agent, to produce a packaged coated workpiece suitable for storage for a period of at least one week without substantial loss of sensitivity, resolution or performance. The present invention also includes a process for preparing a packaged coated workpiece and a method of increasing the storage time of a coated workpiece to at least one week without substantial loss of sensitivity, resolution or performance.
摘要翻译：本发明包括一个包装的涂层工件。包装的涂层工件具有：（1）涂覆有对光辐射，微粒或化学污染物敏感的抗蚀剂膜的工件; （2）密封以封闭涂覆的工件和任选地第一吸气剂的内部阻隔件，以产生密封的第一外壳; 和（3）密封以封闭密封的第一外壳和任选的第二吸气剂的外屏障，只要所包封的涂覆的工件具有至少一个吸气剂，以产生适合于存储至少一个时间段的包装的涂覆的工件周没有明显的灵敏度，分辨率或性能的损失。本发明还包括用于制备包装的涂层工件的方法以及将涂覆的工件的存储时间增加至少一周而不会显着降低灵敏度，分辨率或性能的方法。

6. 发明申请

US20060127800A1 High sensitivity resist compositions for electron-based lithography 有权
标题翻译：用于电子光刻的高灵敏度抗蚀剂组合物
公开(公告)号：US20060127800A1
公开(公告)日：2006-06-15
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David Medeiros , Karen Petrillo , Robert Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David Medeiros , Karen Petrillo , Robert Lang , Marie Angelopoulos
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

7. 发明申请

US20060058489A1 Silicon-containing compositions for spin-on arc/hardmask materials 有权
标题翻译：用于旋转电弧/硬掩模材料的含硅组合物
公开(公告)号：US20060058489A1
公开(公告)日：2006-03-16
申请号：US11263430
申请日：2005-10-31
申请人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Sooriyekumaren
发明人： Marie Angelopoulos , Wu-Song Huang , Arpan Mahorowila , Wayne Moreau , Dirk Pfeiffer , Ratnam Sooriyekumaren
IPC分类号： C08G77/26
CPC分类号： G03F7/0754 , G03F7/0045 , G03F7/091 , Y10S430/106 , Y10S430/115
摘要： Antireflective compositions characterized by the presence of an Si-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含Si聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

8. 发明授权

US06746770B1 Electrically conductive and abrasion/scratch resistant polymeric materials, method of fabrication thereof and uses thereof 失效
标题翻译：导电和耐磨损/耐刮擦的聚合材料，其制造方法及其用途
公开(公告)号：US06746770B1
公开(公告)日：2004-06-08
申请号：US08476141
申请日：1995-06-07
申请人： Ali Afzali-Ardakani , Marie Angelopoulos , Jack Alvin Dickerson , Thomas Baird Pillsbury , Karl Joseph Puttlitz , Jane Margaret Shaw , Jeffrey Donald Gelorme
发明人： Ali Afzali-Ardakani , Marie Angelopoulos , Jack Alvin Dickerson , Thomas Baird Pillsbury , Karl Joseph Puttlitz , Jane Margaret Shaw , Jeffrey Donald Gelorme
IPC分类号： B32B904
CPC分类号： H05K9/0096 , C08G61/12 , H01B1/125 , H01J29/868 , H01L23/49894 , H01L23/60 , H01L33/42 , H01L2924/0002 , H01L2924/12044 , Y10T428/31504 , Y10T428/31511 , Y10T428/31663 , Y10T428/31667 , Y10T428/31797 , Y10T428/31855 , Y10T428/31909 , Y10T428/31924 , Y10T428/31931 , H01L2924/00
摘要： Electrically conductive and abrasion resistant polymeric compositions, methods of fabrication thereof and uses thereof are described. Admixtures of abrasion resistant materials and electrically conductive polymeric materials are formed. Many of these admixtures arc light transmitting and can be used as an abrasion resistant light transmitting electrostatic discharge layers. The light transmitting discharge layer is useful as a surface coating for visual displays such as CRT screens to avoid electrostatic accumulation of dust and scratching. The compositions can be admixtures of abrasion resistant silicones, polysiloxanes, acrylates, epoxies, methacrylates, epoxyacrylates, epoxymethacrylates, styrenes and electrically conductive polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenevinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted and unsubstituted polyfuranes, substituted and unsubstituted polypyrroles, substituted and unsubstituted polyselenophenes, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The compositions can be a layer or an electrically conductive polymer with an abrasion resistant layer thereover.
摘要翻译：描述了导电和耐磨聚合物组合物，其制造方法及其用途。形成耐磨材料和导电聚合材料的外加剂。这些混合物中的许多都是透光的，可以用作耐磨光透射静电放电层。透光放电层可用作诸如CRT屏幕的视觉显示器的表面涂层，以避免灰尘和划痕的静电积累。组合物可以是耐磨硅氧烷，聚硅氧烷，丙烯酸酯，环氧树脂，甲基丙烯酸酯，环氧丙烯酸酯，环氧甲基丙烯酸酯，苯乙烯和选自取代和未取代的聚苯胺的聚合物，聚对亚苯基乙烯基，取代和未取代的聚噻吩的取代和未取代的聚对 - 取代和未取代的聚吡咯，取代和未取代的聚硒吩，可溶性前体形成的聚乙酰胺，其组合以及与其它聚合物的共混物。组合物可以是其上具有耐磨层的层或导电聚合物。

9. 发明授权

US06436605B1 Plasma resistant composition and use thereof 失效
标题翻译：等离子体组合物及其用途
公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译：通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。

10. 发明授权

US06420088B1 Antireflective silicon-containing compositions as hardmask layer 有权
标题翻译：抗反射含硅组合物作为硬掩模层
公开(公告)号：US06420088B1
公开(公告)日：2002-07-16
申请号：US09602967
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
IPC分类号： G03C1825
CPC分类号： C08G77/20 , C08G77/38 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译：特征在于存在具有侧生发色团部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。

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