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1. 发明授权

US07477943B2 Medical device and method of manufacturing 有权
标题翻译：医疗器械及制造方法
公开(公告)号：US07477943B2
公开(公告)日：2009-01-13
申请号：US10723016
申请日：2003-11-26
申请人： Ralph B. Danzl , Mark R. Boone , Paul F. Gerrish , Michael F. Mattes , Tyler Mueller , Jeff Van Wagoner
发明人： Ralph B. Danzl , Mark R. Boone , Paul F. Gerrish , Michael F. Mattes , Tyler Mueller , Jeff Van Wagoner
IPC分类号： A61N1/39
CPC分类号： H01L29/66712 , A61N1/3912 , A61N1/3956 , A61N1/3968 , H01L23/481 , H01L29/41741 , H01L29/41766 , H01L29/7809 , H01L29/7824 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.
摘要翻译：提供了用于制造医疗装置的方法和装置。可植入医疗装置包括半导体衬底，外延层和功率晶体管。外延层覆盖在半导体衬底上。功率晶体管形成在外延层中，并且包括第一电极，控制电极和第二电极。功率晶体管具有大于100伏特的电压击穿。功率晶体管的电流通过外延层垂直于半导体衬底。背面接触耦合到功率晶体管的第一电极。一种制造医疗装置的方法包括形成在覆盖半导体衬底的外延层中的功率晶体管。通过暴露半导体衬底的外延层蚀刻深沟槽。第一电极接触区域耦合到深沟槽中的半导体衬底的暴露区域。

2. 发明申请

US20130335927A1 PLANAR TRANSFORMER ASSEMBLIES FOR IMPLANTABLE CARDIOVERTER DEFIBRILLATORS 有权
标题翻译：平面变压器组件用于可移植的减速器
公开(公告)号：US20130335927A1
公开(公告)日：2013-12-19
申请号：US13524222
申请日：2012-06-15
申请人： Mark R. Boone
发明人： Mark R. Boone
IPC分类号： H05K1/18 , H01F5/00
CPC分类号： H01F27/2804 , A61N1/3981 , H01F27/40 , H01F2027/2809
摘要： A planar transformer assembly, for use in charging capacitors of an ICD, includes windings arranged to minimize voltage across intervening dielectric layers. Each secondary winding of a preferred plurality of secondary windings is arranged relative to a primary winding, in a hierarchical fashion, such that the DC voltage, with respect to ground, of a first secondary winding, of the plurality of secondary windings, is lower than that of a second secondary winding, with respect to ground, wherein the first secondary winding is in closest proximity to the primary winding. The primary winding and each secondary winding are preferably formed on a corresponding plurality of dielectric layers.
摘要翻译：用于对ICD的电容器进行充电的平面变压器组件包括布置成最小化跨介电层的电压的绕组。优选多个次级绕组的每个次级绕组以分层方式相对于初级绕组布置，使得多个次级绕组中的第一次级绕组相对于地的DC电压低于相对于地面的第二次级绕组的第二次级绕组，其中第一次级绕组最靠近初级绕组。初级绕组和每个次级绕组优选地形成在相应的多个电介质层上。

3. 发明授权

US06670217B2 Methods for forming a die package 有权
公开(公告)号：US06670217B2
公开(公告)日：2003-12-30
申请号：US10135911
申请日：2002-04-29
申请人： Juan G. Milla , Mark R. Boone
发明人： Juan G. Milla , Mark R. Boone
IPC分类号： H01L2144
CPC分类号： H01L21/6835 , H01L23/5387 , H01L25/0657 , H01L25/50 , H01L2224/16225 , H01L2224/32145 , H01L2224/73253 , H01L2225/06517 , H01L2225/06579 , H01L2225/06586 , H01L2225/06593 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/3025 , H05K3/3478 , H01L2924/00 , H01L2224/0401
摘要： Methods are provided for forming a die package. The method comprises stiffening a flexible substrate to provide a first flexibility of the flexible substrate, forming a mounting element on a first side of the flexible substrate, and mounting a first side of a die on a second side of the flexible substrate. In addition, the method comprises adjusting the stiffening to provide a second flexibility of the flexible substrate that is greater than the first flexibility, and positioning the flexible substrate to couple a contact of the flexible substrate with a second side of the die.

4. 发明授权

US08830693B2 Planar transformer assemblies for implantable cardioverter defibrillators 有权
标题翻译：用于植入式心律转复除颤器的平面变压器组件
公开(公告)号：US08830693B2
公开(公告)日：2014-09-09
申请号：US13524222
申请日：2012-06-15
申请人： Mark R. Boone
发明人： Mark R. Boone
IPC分类号： H05K1/18
CPC分类号： H01F27/2804 , A61N1/3981 , H01F27/40 , H01F2027/2809
摘要： A planar transformer assembly, for use in charging capacitors of an ICD, includes windings arranged to minimize voltage across intervening dielectric layers. Each secondary winding of a preferred plurality of secondary windings is arranged relative to a primary winding, in a hierarchical fashion, such that the DC voltage, with respect to ground, of a first secondary winding, of the plurality of secondary windings, is lower than that of a second secondary winding, with respect to ground, wherein the first secondary winding is in closest proximity to the primary winding. The primary winding and each secondary winding are preferably formed on a corresponding plurality of dielectric layers.
摘要翻译：用于对ICD的电容器进行充电的平面变压器组件包括布置成最小化跨介电层的电压的绕组。优选多个次级绕组的每个次级绕组以分层方式相对于初级绕组布置，使得多个次级绕组中的第一次级绕组相对于地的DC电压低于相对于地面的第二次级绕组的第二次级绕组，其中第一次级绕组最靠近初级绕组。初级绕组和每个次级绕组优选地形成在相应的多个电介质层上。

5. 发明授权

US06836022B2 High voltage flip-chip component package and method for forming the same 有权
标题翻译：高压倒装芯片封装及其形成方法
公开(公告)号：US06836022B2
公开(公告)日：2004-12-28
申请号：US10365765
申请日：2003-02-13
申请人： Mark R. Boone , Andreas A. Fenner , Juan G. Milla , Lary R. Larson
发明人： Mark R. Boone , Andreas A. Fenner , Juan G. Milla , Lary R. Larson
IPC分类号： H01L2348
CPC分类号： H01L23/552 , H01L21/563 , H01L23/585 , H01L29/0619 , H01L2224/16 , H01L2224/83102 , H01L2224/92125 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/3025 , H01L2924/00 , H01L2224/0401
摘要： A flip-chip package comprises a substrate having at least one layer and a component flip-chip mounted to the substrate, the component having a field termination ring. The flip-chip package further comprises a shield plane interposed between the at least one layer of substrate and the field termination ring.
摘要翻译：倒装芯片封装包括具有至少一个层的衬底和安装到衬底的部件倒装芯片，该部件具有场终端环。倒装芯片封装还包括插入在至少一层衬底和场终端环之间的屏蔽平面。

6. 发明授权

US06626931B2 Implantable medical electronics using high voltage flip chip components 失效
公开(公告)号：US06626931B2
公开(公告)日：2003-09-30
申请号：US09748598
申请日：2000-12-26
申请人： Juan G. Milla , Mark R. Boone
发明人： Juan G. Milla , Mark R. Boone
IPC分类号： A61N100
CPC分类号： A61N1/02 , A61N1/375 , A61N1/3956 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/45124 , H01L2224/48091 , H01L2224/4903 , H01L2224/73265 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An implantable medical device having reduced volume includes a high voltage die mounted to a substrate and assembled into a device body. The die is flip chip mounted, reducing the size of the substrate and of the device. A high voltage implantable medical device such as an implantable cardio defibrillation device or a hybrid device has a high voltage flip chip die mounted to a substrate containing implantable medical device circuitry to operate with the high voltage flip chip.

7. 发明授权

US11213690B2 Wafer level packages of high voltage units for implantable medical devices 有权
公开(公告)号：US11213690B2
公开(公告)日：2022-01-04
申请号：US13524253
申请日：2012-06-15
申请人： Mark R. Boone , Mohsen Askarinya , Randolph E. Crutchfield , Erik J. Herrmann , Mark S. Ricotta , Lejun Wang
发明人： Mark R. Boone , Mohsen Askarinya , Randolph E. Crutchfield , Erik J. Herrmann , Mark S. Ricotta , Lejun Wang
IPC分类号： H01L23/48 , A61N1/39 , H01L23/495 , H01L25/16
摘要： A multi-chip modular wafer level package of a high voltage unit for an implantable cardiac defibrillator includes one or more high voltage (HV) component chips encapsulated with other components thereof in a polymer mold compound of a single reconstituted wafer, wherein all interconnect segments are preferably located on a single side of the wafer. To electrically couple a contact surface of each HV chip, located on a side of the chip opposite the interconnect side of the wafer, the reconstituted wafer may include conductive through polymer vias; alternately, either wire bonds or layers of conductive polymer are formed to couple the aforementioned contact surface to the corresponding interconnect, prior to encapsulation of the HV chips. In some cases one or more of the components encapsulated in the reconstituted wafer of the package are reconstituted chips.

8. 发明申请

US20130335937A1 INTEGRATED CIRCUIT PACKAGING FOR IMPLANTABLE MEDICAL DEVICES 有权
标题翻译：用于可植入医疗器械的集成电路包装
公开(公告)号：US20130335937A1
公开(公告)日：2013-12-19
申请号：US13524368
申请日：2012-06-15
申请人： Mohsen Askarinya , Mark R. Boone , Andreas A. Fenner , Lejun Wang , Kenneth Heames
发明人： Mohsen Askarinya , Mark R. Boone , Andreas A. Fenner , Lejun Wang , Kenneth Heames
IPC分类号： H05K1/18
CPC分类号： H01L25/00 , A61N1/3758 , A61N1/3968 , H01F27/2804 , H01F2027/2819 , H01L23/647 , H01L25/16 , H01L2924/0002 , H01L2924/00
摘要： A hybrid integrated circuit in a wafer level package for an implantable medical device includes one or more passive component windings formed, at least in part, along one or more routing layers of the package. The windings may be primary and secondary windings of a transformer, wherein all or part of a magnetic core thereof is embedded in a component layer of the wafer level package. If the core includes a part bonded to a surface of the package, that part of the core may be E-shaped with legs extending into the routing layers, and, in some cases, through the routing layers. Routing layers may be formed on both sides of the component layer to accommodate the transformer windings, in some instances.
摘要翻译：用于可植入医疗器件的晶片级封装中的混合集成电路包括至少部分地沿着封装的一个或多个布线层形成的一个或多个无源元件绕组。绕组可以是变压器的初级和次级绕组，其中全部或部分磁芯嵌入在晶片级封装的组件层中。如果芯包括结合到包装表面的部分，那么芯部的该部分可以是E形的，其中腿部延伸到路线层中，并且在一些情况下，可以通过路由层。在某些情况下，路由层可以形成在组件层的两侧以容纳变压器绕组。

9. 发明申请

US20130334680A1 WAFER LEVEL PACKAGES OF HIGH VOLTAGE UNITS FOR IMPLANTABLE MEDICAL DEVICES AND CORRESPONDING FABRICATION METHODS 审中-公开
标题翻译：用于可植入医疗器械的高压单元的水平包装和相应的制造方法
公开(公告)号：US20130334680A1
公开(公告)日：2013-12-19
申请号：US13524253
申请日：2012-06-15
申请人： Mark R. Boone , Mohsen Askarinya , Randolph E. Crutchfield , Erik J. Herrmann , Mark S. Ricotta , Lejun Wang
发明人： Mark R. Boone , Mohsen Askarinya , Randolph E. Crutchfield , Erik J. Herrmann , Mark S. Ricotta , Lejun Wang
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： A61N1/3956 , F04C2270/041 , H01L23/49548 , H01L23/49575 , H01L25/16 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2924/01015 , H01L2924/01047 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A multi-chip modular wafer level package of a high voltage unit for an implantable cardiac defibrillator includes one or more high voltage (HV) component chips encapsulated with other components thereof in a polymer mold compound of a single reconstituted wafer, wherein all interconnect segments are preferably located on a single side of the wafer. To electrically couple a contact surface of each HV chip, located on a side of the chip opposite the interconnect side of the wafer, the reconstituted wafer may include conductive through polymer vias; alternately, either wire bonds or layers of conductive polymer are formed to couple the aforementioned contact surface to the corresponding interconnect, prior to encapsulation of the HV chips. In some cases one or more of the components encapsulated in the reconstituted wafer of the package are reconstituted chips.
摘要翻译：用于可植入心脏除颤器的高电压单元的多芯片模块化晶片级封装包括在单个重构晶片的聚合物模具化合物中与其他组分封装的一个或多个高电压（HV）组件芯片，其中所有互连部分优选地位于晶片的单侧上。为了电耦合位于与晶片的互连侧相对的芯片侧的每个HV芯片的接触表面，重构的晶片可以包括导电的通过聚合物通孔; 交替地，在封装HV芯片之前，形成导线或者导电聚合物层以将上述接触表面耦合到相应的互连。在一些情况下，封装在包装的重构晶片中的一种或多种组分是重组芯片。

10. 发明授权

US6057175A Method of making encapsulated package 有权
标题翻译：封装包装方法
公开(公告)号：US6057175A
公开(公告)日：2000-05-02
申请号：US285365
申请日：1999-04-02
申请人： Juan G. Milla , Mark R. Boone
发明人： Juan G. Milla , Mark R. Boone
IPC分类号： A61N1/05 , H01L23/31 , H05K1/02 , H05K1/11 , H05K3/28 , H01L21/44
CPC分类号： A61N1/05 , H01L23/3121 , H01L2224/05599 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L24/48 , H01L2924/00014 , H01L2924/01039 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H05K1/0254 , H05K1/112 , H05K3/284
摘要： An encapsulated package includes a substrate having one or more conductive vias defined therethrough from a first side of the substrate to a second side of the substrate. Conductive bond pads are formed on the first side of the substrate in electrical contact with the one or more conductive vias and conductive package connection pads are formed on the second side of the substrate in electrical contact with the one or more conductive vias. A high voltage component is electrically connected to the conductive bond pads and an encapsulating material is formed over the first side of the substrate including the high voltage component and the conductive bond pads. The encapsulating material has a dielectric strength sufficient for use to block high voltages used in operation of the high voltage components. Further, a method of production allows for mass production of such encapsulated packages.
摘要翻译：封装的封装包括具有从衬底的第一侧至衬底的第二侧穿过的一个或多个导电通孔的衬底。导电接合焊盘形成在与一个或多个导电通孔电接触的衬底的第一侧上，并且导电封装连接焊盘形成在与一个或多个导电通孔电接触的衬底的第二侧上。高电压部件电连接到导电接合焊盘，并且在包括高电压部件和导电接合焊盘的衬底的第一侧上形成封装材料。封装材料具有足够的介电强度，用于阻止在高压部件的操作中使用的高电压。此外，生产方法允许大量生产这种封装的包装。

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