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    • 6. 发明授权
    • Interconnection interface for flexible online/offline deployment of an n-layered software application
    • 互联接口,用于灵活的在线/离线部署n层软件应用程序
    • US08719778B2
    • 2014-05-06
    • US11878093
    • 2007-07-20
    • Karlheinz DornRalf Hofmann
    • Karlheinz DornRalf Hofmann
    • G06F9/44G06F9/445
    • G06F8/00
    • A method is disclosed for producing a software application with at least two layers, including a processing layer and a process layer, wherein each layer is encapsulated and hence platform-independent in its execution, the encapsulated layers communicating via an application programming interface. A system is also disclosed for producing an application including a flexible interconnection interface between encapsulated layers. By virtue of the implementation of an additional configurable interconnection interface in the application programming interface between two encapsulated application layers, the architecture layering can be retained regardless of the respective deployment, and only the communication profiles of the interconnection interfaces need be adapted to the deployment. This has the advantage, in at least one embodiment, that it is not necessary to produce and update different source code masters for the different deployments, and instead only one single architecture layering of the application need be created and maintained.
    • 公开了一种用于生产具有至少两层的软件应用的方法,包括处理层和处理层,其中每个层被封装,因此在其执行中因此与平台无关,所述封装层经由应用编程接口进行通信。 还公开了一种用于生产包括在封装层之间的柔性互连接口的应用的系统。 通过在两个封装的应用层之间的应用程序编程接口中实现附加的可配置互连接口,可以保留架构分层,而不管相应的部署如何,并且只有互连接口的通信配置需要适应于部署。 这在至少一个实施例中具有以下优点:不需要为不同部署生成和更新不同的源代码主机,而是需要创建和维护应用程序的一个单一架构分层。
    • 9. 发明申请
    • DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE
    • 使用远程等离子体源进行介电沉积
    • US20110226617A1
    • 2011-09-22
    • US13069205
    • 2011-03-22
    • Ralf HofmannMajeed A. Foad
    • Ralf HofmannMajeed A. Foad
    • C23C14/34C23C14/35C23C14/06C23C14/46
    • C23C14/3407C23C14/0036C23C14/06C23C14/354H01J37/32357H01J37/34H05H1/46H05H2001/4667
    • A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.
    • 溅射沉积系统包括真空室,其包括用于在真空室中保持真空的真空泵,用于向真空室供应处理气体的气体入口,真空室内的溅射靶和衬底保持器,以及附着的等离子体源 到真空室并且远离溅射靶定位,等离子体源被配置成形成延伸到真空室中的高密度等离子体束。 等离子体源可以包括矩形横截面源室,电磁体和射频线圈,其中矩形横截面源室和射频线圈被配置为给予高密度等离子体束细长的卵形横截面 。 此外,溅射靶的表面可以被配置为非平面形式,以在衬底保持器上的衬底的表面处提供均匀的等离子体能量沉积到靶中和/或均匀的溅射沉积。 溅射沉积系统可以包括等离子体扩散系统,用于重新形成高密度等离子体束,以完全和均匀地覆盖溅射靶。