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1. 发明授权

US09162344B2 Method and apparatus for CMP conditioning 有权
标题翻译： CMP调理方法和装置
公开(公告)号：US09162344B2
公开(公告)日：2015-10-20
申请号：US13785845
申请日：2013-03-05
申请人： Rajeev Bajaj
发明人： Rajeev Bajaj
IPC分类号： B24B1/00 , B24B53/017 , B23K26/00 , B24B53/095
CPC分类号： B24B53/017 , B23K26/3576 , B24B53/095
摘要： A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.
摘要翻译：抛光垫调节装置包括用于提供激光束的激光束产生单元，用于提供流体流的流体输送系统和用于去除碎屑的真空管线。激光束可以直接冲击抛光垫的表面，从而产生切割作用，而雾化的流体流提供冷却和垫片碎屑以及流体通过真空管线被去除。或者，激光束可以与垫表面上方的区域中的雾化流体流组合，以将其能量的一部分基本上赋予流体流，产生在焊盘表面上提供“冷”切割作用的高能量液滴。

2. 发明申请

US20150056900A1 POLISHING PAD WITH HOMOGENEOUS BODY HAVING DISCRETE PROTRUSIONS THEREON 有权
标题翻译：具有同位素分布的均质体的抛光垫
公开(公告)号：US20150056900A1
公开(公告)日：2015-02-26
申请号：US14530534
申请日：2014-10-31
申请人： Rajeev Bajaj , Ping Huang , Robert Kerprich , William C. Allison , Richard Frentzel , Diane Scott
发明人： Rajeev Bajaj , Ping Huang , Robert Kerprich , William C. Allison , Richard Frentzel , Diane Scott
IPC分类号： B24B37/26 , B29C39/12 , B24B37/24 , B24D18/00 , B24B37/20 , B24B37/22
CPC分类号： B24B37/26 , B24B37/205 , B24B37/22 , B24B37/24 , B24D18/0009 , B29C39/123 , B29K2075/00 , B29L2009/00 , B29L2031/736
摘要： Polishing pads with homogeneous bodies having discrete protrusions thereon are described. In an example, a polishing pad for polishing a substrate includes a homogeneous body having a polishing side and a back side. The homogeneous body is composed of a material having a first hardness. A plurality of discrete protrusions is disposed on and covalently bonded with the polishing side of the homogeneous body. The plurality of discrete protrusions is composed of a material having a second hardness different from the first hardness. Methods of fabricating polishing pads with homogeneous bodies having discrete protrusions thereon are also described.
摘要翻译：描述具有其上具有离散突起的均匀体的抛光垫。在一个实例中，用于抛光衬底的抛光垫包括具有抛光侧和背面的均匀体。均质体由具有第一硬度的材料构成。多个分立的突起设置在同质体的抛光侧上并与之共同地结合。多个离散突起由具有与第一硬度不同的第二硬度的材料构成。还描述了制造具有其上具有离散突起的均匀体的抛光垫的方法。

3. 发明授权

US07815778B2 Electro-chemical mechanical planarization pad with uniform polish performance 有权
标题翻译：电化学机械平面化垫具有均匀的抛光性能
公开(公告)号：US07815778B2
公开(公告)日：2010-10-19
申请号：US11562310
申请日：2006-11-21
申请人： Rajeev Bajaj
发明人： Rajeev Bajaj
IPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , C25F3/16 , C25F3/18 , C25F3/30
CPC分类号： B24B37/20
摘要： A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.
摘要翻译：抛光垫包括由其中具有导电图案化的可压缩底层支撑的至少一个导电抛光元件，所述导电图案适于允许将电位耦合到导电抛光元件; 在可压缩底层上方的引导板，所述引导板具有用于抛光元件通过的孔，并且还具有连接到其上的阴极元件; 以及粘附到与可压缩底层相对的引导板的浆料分布层。抛光垫还可以包括置于阴极元件上的质子交换膜。可以使用抛光垫将晶片与抛光元件接触，向抛光元件施加阳极电流，向阴极元件施加阴极电流，并用阳极溶液抛光，可以抛光其上具有金属膜的半导体晶片。对于铜膜，可以使用硫酸 - 硫酸铜溶液。

4. 发明授权

US07759165B1 Nanospring 失效
标题翻译：纳米螺旋
公开(公告)号：US07759165B1
公开(公告)日：2010-07-20
申请号：US12395681
申请日：2009-03-01
申请人： Rajeev Bajaj
发明人： Rajeev Bajaj
IPC分类号： H01L21/00
CPC分类号： B81C1/0019 , B81B2207/07
摘要： A nanospring is formed by first forming a stack of alternating layers of materials which have different susceptibilities to a selective etch solution. The stack is formed over a substrate and is subsequently etched with a substantially non-isotropic etch to create a via having substantially straight sidewalls. The sidewalls of the via are exposed to the selective etch solution, thereby creating irregular sidewalls of the via. A metal film is conformally deposited within the via, and, after excess metal is removed, the stack of alternating layers of materials is etched to expose remaining portions of the conformably deposited film, which comprise the nanospring.
摘要翻译：通过首先形成具有与选择性蚀刻溶液不同的敏感性的交替层材料层来形成纳米纺丝。堆叠形成在衬底上，随后用基本上非各向同性的蚀刻进行蚀刻，以形成具有基本上直的侧壁的通孔。通孔的侧壁暴露于选择性蚀刻溶液，从而产生通孔的不规则侧壁。在通孔内共形沉积金属膜，并且在去除多余的金属之后，蚀刻交替的材料层的叠层以暴露构成纳米弹簧的顺应沉积膜的剩余部分。

5. 发明申请

US20090266002A1 POLISHING PAD AND METHOD OF USE 审中-公开
标题翻译：抛光垫及其使用方法
公开(公告)号：US20090266002A1
公开(公告)日：2009-10-29
申请号：US12431119
申请日：2009-04-28
申请人： Rajeev Bajaj
发明人： Rajeev Bajaj
IPC分类号： B24D3/00 , B29C45/00
CPC分类号： B24B37/26 , B29C45/0001 , B29C45/0013 , B29K2059/00 , B29K2071/00 , B29K2075/00 , B29K2079/085
摘要： Polishing pads of varying compositions for use in chemical mechanical planarization (CMP) and methods of manufacturing and using such pads. Examples of such polishing pads include two phases, one of which may be a high modulus, low wear material that maintains a stable texture when subject to a conditioning process (e.g., polyoxymethylene, Delrin, polyamide-imide (Torlon), polyetheretherketone (PEEK), and/or polysulfone), and the other of which may be a material having a polishing ability (e.g., a polyurethane material).
摘要翻译：用于化学机械平面化（CMP）的不同组成的抛光垫以及制造和使用这种垫的方法。这种抛光垫的实例包括两个相，其中一个可以是在经受调节过程（例如，聚甲醛，Delrin，聚酰胺 - 酰亚胺（Torlon），聚醚醚酮（PEEK））时保持稳定织构的高模量，低磨损材料，，和/或聚砜），另一种可以是具有抛光能力的材料（例如，聚氨酯材料）。

6. 发明申请

US20080318505A1 CHEMICAL MECHANICAL PLANARIZATION PAD AND METHOD OF USE THEREOF 审中-公开
标题翻译：化学机械平面板及其使用方法
公开(公告)号：US20080318505A1
公开(公告)日：2008-12-25
申请号：US11968442
申请日：2008-01-02
申请人： Rajeev Bajaj
发明人： Rajeev Bajaj
IPC分类号： B24D11/00
CPC分类号： B24B37/26
摘要： A web-style polishing pad includes a guide layer through which individual polishing elements protrude on one side and a flexible under-layer attached to the other side. The polishing elements may be affixed at their base to the compressible under-layer and pass through corresponding holes in the guide layer so as to be maintained and translatable in a substantially orthogonal orientation with respect to a plane defined by the guide layer.
摘要翻译：网状抛光垫包括引导层，各个抛光元件通过该引导层在一侧突出，并且柔性底层附着到另一侧。抛光元件可以在它们的底部固定到可压缩底层并穿过引导层中的相应的孔，以便相对于由引导层限定的平面基本正交的方向保持和平移。

7. 发明申请

US20080164153A1 Electro-Method and Apparatus for Improved Chemical Mechanical Planarization Pad with Uniform Polish Performance 有权
标题翻译：具有均匀波动性能的改进化学机械平面化垫的电子方法和装置
公开(公告)号：US20080164153A1
公开(公告)日：2008-07-10
申请号：US11576942
申请日：2005-10-05
申请人： Rajeev Bajaj
发明人： Rajeev Bajaj
IPC分类号： B23H3/00 , B24B29/00 , B24D11/00
CPC分类号： B23H5/08
摘要： A polishing pad includes a guide plate having a plurality of holes therein and being affixed to a compressible under-layer; and a plurality of conducting polishing elements each affixed to the compressible under-layer and passing through a sealed contact with a proton exchange membrane and corresponding hole in the guide plate so as to be maintained in a substantially vertical orientation with respect to the compressible under-layer but being translatable in a vertical direction with respect to the guide plate. The polishing pad may also include a slurry distribution material fastened to the guide plate by an adhesive. Pad wear sensors may also be provided in the polishing pad.
摘要翻译：抛光垫包括其中具有多个孔并被附着在可压缩底层上的引导板; 以及多个导电抛光元件，每个导电抛光元件各自固定到可压缩底层上，并且通过与质子交换膜和引导板中的对应孔的密封接触，以相对于可压缩底层保持基本垂直的方向，层，但可相对于导板在垂直方向上平移。抛光垫还可以包括通过粘合剂固定到引导板的浆料分布材料。抛光垫也可以设置垫磨损传感器。

8. 发明授权

US06585574B1 Polishing pad with reduced moisture absorption 失效
标题翻译：抛光垫减少吸湿
公开(公告)号：US06585574B1
公开(公告)日：2003-07-01
申请号：US09596842
申请日：2000-06-19
申请人： Brian Lombardo , Rajeev Bajaj
发明人： Brian Lombardo , Rajeev Bajaj
IPC分类号： B24B500
CPC分类号： B24B37/24 , B24D3/26 , B24D3/34 , B24D11/001
摘要： A polishing pad for use in chemical mechanical polishing (CMP) is disclosed. The polishing pad has a pad surface for polishing wafer surfaces. The pad surface is composed of a polymeric matrix material. The polishing pad also contains a polymeric additive which is defined in the polymeric matrix of the pad surface and in cells of the pad surface. The polymeric additive may include one of a polyurethane, a polyamide, a polyester, a polyacrylonitrile, a polyacrylate, a polymethacrylate, a polyvinylchloride, and a polyvinylidene chloride. The polymeric additive is configured to be hydrophilic so that the pad surface is wettable to enable improved slurry distribution over the pad surface.
摘要翻译：公开了一种用于化学机械抛光（CMP）的抛光垫。抛光垫具有用于抛光晶片表面的焊盘表面。垫表面由聚合物基质材料组成。抛光垫还包含聚合物添加剂，其定义在垫表面的聚合物基体中和垫表面的单元中。聚合物添加剂可以包括聚氨酯，聚酰胺，聚酯，聚丙烯腈，聚丙烯酸酯，聚甲基丙烯酸酯，聚氯乙烯和聚偏二氯乙烯中的一种。聚合物添加剂被配置为亲水的，使得垫表面是可润湿的，以使得能够改善焊盘表面上的浆料分布。

9. 发明授权

US06436832B1 Method to reduce polish initiation time in a polish process 失效
标题翻译：在抛光过程中减少抛光开始时间的方法
公开(公告)号：US06436832B1
公开(公告)日：2002-08-20
申请号：US09578157
申请日：2000-05-23
申请人： Yutao Ma , Juilung Li , Fred C. Redeker , Tse-Yong Yao , Rajeev Bajaj
发明人： Yutao Ma , Juilung Li , Fred C. Redeker , Tse-Yong Yao , Rajeev Bajaj
IPC分类号： H01L2100
CPC分类号： H01L21/02074 , C11D7/265 , C11D11/0047 , H01L21/3212
摘要： High through-put CMP is achieved by the application of a cleaning composition on to an exposed surface of a metal layer prior to polishing the bulk metal layer. Embodiments of the present invention include applying an aqueous composition containing citric acid and ammonium hydroxide in deionized water to remove a native oxide film that forms on a copper containing layer and then polishing the copper containing layer to substantially planarize the metal layer.
摘要翻译：在抛光本体金属层之前，通过将清洁组合物施加到金属层的暴露表面上来实现高通量CMP。本发明的实施方案包括将含有柠檬酸和氢氧化铵的水性组合物施加到去离子水中以除去在含铜层上形成的自然氧化物膜，然后抛光含铜层以使金属层基本上平坦化。

10. 发明授权

US6001726A Method for using a conductive tungsten nitride etch stop layer to form conductive interconnects and tungsten nitride contact structure 失效
标题翻译：使用导电氮化钨蚀刻停止层形成导电互连和氮化钨接触结构的方法
公开(公告)号：US6001726A
公开(公告)日：1999-12-14
申请号：US822670
申请日：1997-03-24
申请人： Rajan Nagabushnam , Rajeev Bajaj , Ram Venkataraman , Shyam Mattay , Subramoney V. Iyer
发明人： Rajan Nagabushnam , Rajeev Bajaj , Ram Venkataraman , Shyam Mattay , Subramoney V. Iyer
IPC分类号： H01L21/3213 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/32134 , H01L21/76841 , H01L21/76885
摘要： A method for forming a contact structure (10) which enables the use of ultra-shallow source/drain junctions begins by forming source and drain regions (14) and gate electrode (16). The source and drain regions (14) and the gate electrode (16) are silicided to form silicide regions (20). A conductive tungsten nitride etch stop layer (22) is formed overlying the silicide regions (20). Contact plug regions (28) are then formed to contact to the etch stop layer (22) and silicided regions (20). At this point, all of the silicide regions (20) are electrically short circuited. To remove this electric short circuit, an isotropic etch process comprising hydrogen peroxide, ammonium hydroxide, and water is used to remove portions of the tungsten nitride regions which are between the individual contact portions (28) in a self-aligned manner.
摘要翻译：形成能够使用超浅源极/漏极结的接触结构（10）的方法开始于形成源极和漏极区域（14）和栅极电极（16）。源极和漏极区域（14）和栅极电极（16）被硅化以形成硅化物区域（20）。形成覆盖硅化物区域（20）的导电氮化钨蚀刻停止层（22）。接触塞区域（28）然后形成为与蚀刻停止层（22）和硅化区域（20）接触。此时，所有硅化物区域（20）都电短路。为了去除该电短路，使用包括过氧化氢，氢氧化铵和水的各向同性蚀刻工艺，以自对准的方式去除位于各个接触部分（28）之间的部分氮化钨区域。

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