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1. 发明授权

US6146248A Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher 失效
标题翻译：用于原位终点检测和使用线性抛光机优化化学机械抛光工艺的方法和装置
公开(公告)号：US6146248A
公开(公告)日：2000-11-14
申请号：US869655
申请日：1997-05-28
申请人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
发明人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
IPC分类号： B24B21/04 , B24B37/013 , B24B49/04 , B24D7/12 , H01L21/304 , H01L21/66 , B24B1/00
CPC分类号： B24B37/013 , B24B21/04 , B24B49/04 , B24D7/12 , H01L22/26
摘要： A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
摘要翻译：用于基材的化学机械抛光（CMP）的线性抛光带包括固定到带上的开口和柔性监测窗，以关闭开口并在带中形成监测通道。也可以使用多个监视通道。包括干涉仪的膜厚监视器可以沿着带或者至少部分地设置在由其限制的区域内。监测通道和膜厚度监测器可用于CMP工艺中以确定CMP工艺的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定跨越衬底表面的去除率变化基板表面，并优化去除速率和均匀性。

2. 发明授权

US06261155B1 Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher 失效
标题翻译：用于原位终点检测和使用线性抛光机优化化学机械抛光工艺的方法和装置
公开(公告)号：US06261155B1
公开(公告)日：2001-07-17
申请号：US09527171
申请日：2000-03-16
申请人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
发明人： Rahul Jairath , Jiri Pecen , Saket Chadda , Wilbur C. Krusell , Jerauld J. Cutini , Erik H. Engdahl
IPC分类号： B24B100
CPC分类号： B24B37/013 , B24B21/04 , B24B49/04 , B24D7/12 , H01L22/26
摘要： A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.
摘要翻译：用于基材的化学机械抛光（CMP）的线性抛光带包括固定到带上的开口和柔性监测窗，以关闭开口并在带中形成监测通道。也可以使用多个监视通道。包括干涉仪的膜厚监视器可以沿着带或者至少部分地设置在由其限制的区域内。监测通道和膜厚度监测器可用于CMP工艺中以确定CMP工艺的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定跨越衬底表面的去除率变化基板表面，并优化去除速率和均匀性。

3. 发明授权

US06517418B2 Method of transporting a semiconductor wafer in a wafer polishing system 失效
标题翻译：在晶片抛光系统中输送半导体晶片的方法
公开(公告)号：US06517418B2
公开(公告)日：2003-02-11
申请号：US09887950
申请日：2001-06-22
申请人： Erik H. Engdahl , Edward T. Ferri, Jr. , Wilbur C. Krusell , Rahul Jairath
发明人： Erik H. Engdahl , Edward T. Ferri, Jr. , Wilbur C. Krusell , Rahul Jairath
IPC分类号： B24B100
CPC分类号： H01L21/31053 , B24B21/04 , B24B21/10 , B24B37/04 , B24B37/345 , B24B41/005
摘要： A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.
摘要翻译：提供了一种用于平坦化多个半导体晶片的系统和方法。该方法包括以下步骤：使用至少两个抛光站沿着相同的处理路径处理每个晶片，以使晶片各自部分平坦化。该系统包括改进的处理路径，在每个处理点处交换具有主轴的可拆卸晶片承载头并将处理点之间的旋转索引台中的分离的晶片承载头传送。该系统还提供了使用具有气动可调节带张紧和对准能力的线性抛光机来提高抛光精度。

4. 发明授权

US06336845B1 Method and apparatus for polishing semiconductor wafers 失效
标题翻译：用于抛光半导体晶片的方法和装置
公开(公告)号：US06336845B1
公开(公告)日：2002-01-08
申请号：US08968333
申请日：1997-11-12
申请人： Erik H. Engdahl , Edward T. Ferri, Jr. , Wilbur C. Krusell , Rahul Jairath , Randall L. Green , Anil Pant
发明人： Erik H. Engdahl , Edward T. Ferri, Jr. , Wilbur C. Krusell , Rahul Jairath , Randall L. Green , Anil Pant
IPC分类号： B24B722
CPC分类号： H01L21/31053 , B24B21/04 , B24B21/10 , B24B37/04 , B24B37/345 , B24B41/005
摘要： A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.
摘要翻译：提供了一种用于平坦化多个半导体晶片的系统和方法。该方法包括以下步骤：使用至少两个抛光站沿着相同的处理路径处理每个晶片，以使晶片各自部分平坦化。该系统包括改进的处理路径，在每个处理点处交换具有主轴的可拆卸晶片承载头并将处理点之间的旋转索引台中的分离的晶片承载头传送。该系统还提供了使用具有气动可调节带张紧和对准能力的线性抛光机来提高抛光精度。

5. 发明授权

US06224461B1 Method and apparatus for stabilizing the process temperature during chemical mechanical polishing 失效
标题翻译：化学机械抛光过程中稳定工艺温度的方法和装置
公开(公告)号：US06224461B1
公开(公告)日：2001-05-01
申请号：US09280439
申请日：1999-03-29
申请人： Robert G. Boehm, Jr. , Anil K. Pant , Wilbur C. Krusell , Erik H. Engdahl
发明人： Robert G. Boehm, Jr. , Anil K. Pant , Wilbur C. Krusell , Erik H. Engdahl
IPC分类号： B24B500
CPC分类号： B24B37/015 , B24B21/04 , B24B55/02
摘要： A temperature compensating unit is coupled to a linearly moving belt of a polisher for adjusting the temperature of the belt, which temperature is measured by a sensor situated proximal to the belt.
摘要翻译：温度补偿单元耦合到抛光机的线性移动带，用于调节带的温度，该温度由位于带附近的传感器测量。

6. 发明授权

US5762536A Sensors for a linear polisher 失效
标题翻译：线性抛光机的传感器
公开(公告)号：US5762536A
公开(公告)日：1998-06-09
申请号：US797470
申请日：1997-02-06
申请人： Anil K. Pant , Joseph R. Breivogel , Douglas W. Young , Rahul Jairath , Erik H. Engdahl
发明人： Anil K. Pant , Joseph R. Breivogel , Douglas W. Young , Rahul Jairath , Erik H. Engdahl
IPC分类号： B24B21/04 , B24B21/08 , B24B37/04 , B24B49/16 , B24B49/00 , B24B51/00
CPC分类号： B24B21/04 , B24B21/08 , B24B37/04 , B24B49/16
摘要： A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information from the sensors are processed in order to provide feedback for compensating the fluid dispensing when fluid platens are used and/or the downforce exerted by the wafer carrier.
摘要翻译：当使用线性抛光机抛光晶片时，利用传感器来监测半导体晶片的抛光的技术。传感器沿着表面分布或耦合到沿着表面的开口以监测正在进行的抛光过程。对来自传感器的感测信息进行处理，以便在使用流体压板和/或由晶片载体施加的下压力时提供用于补偿流体分配的反馈。

7. 发明授权

US06729945B2 Apparatus for controlling leading edge and trailing edge polishing 失效
标题翻译：用于控制前缘和后缘抛光的装置
公开(公告)号：US06729945B2
公开(公告)日：2004-05-04
申请号：US09823722
申请日：2001-03-30
申请人： Cangshan Xu , Jeff Gasparitsch , Robert Taff , Kenneth J. Bahng , Paul Stasiewicz , Erik H. Engdahl
发明人： Cangshan Xu , Jeff Gasparitsch , Robert Taff , Kenneth J. Bahng , Paul Stasiewicz , Erik H. Engdahl
IPC分类号： B24B2108
CPC分类号： B24B37/16 , B24B21/04
摘要： A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.
摘要翻译：公开了一种用于化学机械平面化（CMP）系统的压板。压板布置在线性抛光垫的下方，并设计成将受控流体流施加到线性抛光垫的下侧。台板包括一个包含第一多个输出孔的引导区。前导区域更接近于线性抛光垫的上游区域。压盘还包括包含第二多个输出孔的拖尾区域。拖尾区域更靠近直线抛光垫的下游区域。引导区域和拖尾区域被独立地控制和设计成独立于第一多个输出孔和第二多个输出孔中的每一个输出受控流体流动。

8. 发明授权

US06716093B2 Low friction gimbaled substrate holder for CMP apparatus 失效
标题翻译：用于CMP设备的低摩擦万向架基板支架
公开(公告)号：US06716093B2
公开(公告)日：2004-04-06
申请号：US10013429
申请日：2001-12-07
申请人： Erik H. Engdahl , Michael D. Steiman , Paul H. Stasiewicz, Jr.
发明人： Erik H. Engdahl , Michael D. Steiman , Paul H. Stasiewicz, Jr.
IPC分类号： B24B700
CPC分类号： B24B37/27 , B24B37/30
摘要： An assembly for holding a substrate in a chemical mechanical planarization (CMP) apparatus is provided. The assembly includes a holder frame insertable into the chemical mechanical planarization apparatus, the holder frame having an inner wall. The assembly further includes at least one rolling mechanism rotatably mounted in the holder frame such that at least a portion of the rolling mechanism protrudes from the inner wall. The assembly also includes a wafer chuck movably mounted in the holder frame, the wafer chuck having a first side shaped to substantially conform to the inner wall and to be in continuous contact with the at least one rolling mechanism during planarization, and a second side adapted to receive a substrate for planarization. Also provided are an improved assembly for holding a substrate in a CMP apparatus and a method for reducing friction in a gimbaling mechanism of a wafer chuck in a wafer holder in a CMP apparatus during planarization.
摘要翻译：提供了一种用于在化学机械平面化（CMP）装置中保持基板的组件。该组件包括可插入到化学机械平面化装置中的保持架，所述保持架具有内壁。组件还包括至少一个可旋转地安装在保持架框架中的滚动机构，使得滚动机构的至少一部分从内壁突出。组件还包括可移动地安装在保持器框架中的晶片夹具，晶片卡盘具有成形为基本上符合内壁并且在平坦化期间与至少一个滚动机构连续接触的第一侧，并且第二侧适配以接收用于平坦化的衬底。还提供了一种用于在CMP设备中保持基板的改进的组件以及用于在平坦化期间在CMP设备中的晶片保持器中的用于减小晶片卡盘的万向节机构中的摩擦力的方法。

9. 发明授权

US5618351A Thermal processing apparatus and process 失效
标题翻译：热处理设备及工艺
公开(公告)号：US5618351A
公开(公告)日：1997-04-08
申请号：US563875
申请日：1995-11-28
申请人： Terry A. Koble, Jr. , Anthony Dip , Erik H. Engdahl , Ian R. Oliver , Christopher T. Ratliff
发明人： Terry A. Koble, Jr. , Anthony Dip , Erik H. Engdahl , Ian R. Oliver , Christopher T. Ratliff
IPC分类号： H01L21/22 , H01L21/00 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67303 , H01L21/67109 , H01L21/67309
摘要： Thermal treatment boat comprising a cylinder having a central axis and a plurality of band slots having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along said central axis. At least one slot in each set extends around at least 180.degree. and less than of the full circumference of said cylinder. Pairs of adjacent band slots define an annular band therebetween. The height of each slot being from about 3.8 to 12.7 mm. Each of the bands having a height, Height.sub.Band, in mm, according to the equation: ##EQU1## wherein Height.sub.Band is always .ltoreq. wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat. The cylinder can include a wafer loading effector slot therethrough in a plane of the central axis extending along the length of the cylinder. Each band preferably includes wafer support means for supporting a wafer therein. The wafer support means preferably includes at least three inwardly extending projections. The spacing between the wafer edge and the cylinder wall is within the range of from about 1.5 to 6.3 mm. In the optimum process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage from thermal stresses to the wafers.
摘要翻译：热处理舟包括具有中心轴线的圆筒和多个带槽，所述多个带槽在垂直于所述中心轴线的平面中具有相对的上表面和下表面，并沿着所述中心轴线在预定位置间隔开。每组中的至少一个狭槽围绕至少180°并且小于所述气缸的整个圆周的周长。成对的相邻带隙在它们之间限定环形带。每个槽的高度为约3.8至12.7毫米。每个带具有高度，HeightBand，mm，根据以下等式：其中HeightBand总是

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