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    • 1. 发明授权
    • Fabrication of an ion exchange polish pad
    • 制造离子交换抛光垫
    • US06905526B1
    • 2005-06-14
    • US09993575
    • 2001-11-06
    • Sanjay DabralAnil K. Pant
    • Sanjay DabralAnil K. Pant
    • B24B37/04B24D3/34B24D7/02B24D3/02C09C1/68C09K3/14
    • B24B37/22B24D3/344B24D7/02
    • Embodiments of the invention include an ion exchange polish pad for polishing a semiconductor substrate, on which various conductive, semiconductive, and/or insulative layers are formed, for example a conductive copper layer. Embodiments also include the method for the manufacture of an ion exchange polish pad. In certain embodiments an ion exchange polish pad includes a base material and a ion exchange layer including, which further includes an ion exchange material. Cations in the ion exchange material may be exchanged with other cations, such as copper, under the proper process conditions for the planarization of a processed semiconductor substrate.
    • 本发明的实施例包括用于抛光半导体衬底的离子交换抛光垫,其上形成有各种导电,半导体和/或绝缘层,例如导电铜层。 实施例还包括用于制造离子交换抛光垫的方法。 在某些实施方案中,离子交换抛光垫包括基材和离子交换层,所述离子交换层还包括离子交换材料。 离子交换材料中的阳离子可以在适当的工艺条件下与其它阳离子例如铜交换,以便对被处理的半导体衬底进行平坦化。
    • 2. 发明授权
    • Method and apparatus to recondition an ion exchange polish pad
    • 修复离子交换抛光垫的方法和装置
    • US06773337B1
    • 2004-08-10
    • US09993809
    • 2001-11-06
    • Sanjay DabralAnil K. Pant
    • Sanjay DabralAnil K. Pant
    • B24B100
    • B24B53/017B24B37/042B24D3/344B24D7/02
    • In certain embodiments of the invention an ion exchange polish pad, which is used for polishing Copper layers formed on a semiconductor substrate, may be conditioned and/or reconditioned to regenerate its binding capacity for cations. Once bound to an ion exchange polish pad, cations for example may be exchanged for protons (H+) by exposing the ion exchange polish pad to a reconditioning medium(s). The exchange of cations with H+ reconditions the ion exchange material of an ion exchange polish pad so it is capable of binding and removing additional cations from a surface. In certain embodiments, a reconditioning head is used to recondition an ion exchange polish pad. A typical reconditioning process comprises elution of bound copper from ion exchange polish pad followed by protonation. Elution of bound copper may be accomplished by exposing an ion exchange polish pad to a strong acid solution, or similar chemical treatments.
    • 在本发明的某些实施方案中,用于抛光形成在半导体衬底上的铜层的离子交换抛光垫可以被调理和/或再生以再生其对阳离子的结合能力。 一旦结合到离子交换抛光垫上,阳离子例如可以通过将离子交换抛光垫暴露于修复介质来交换质子(H +)。 用H +交换阳离子重新调整离子交换抛光垫的离子交换材料,使其能够从表面结合和除去附加的阳离子。 在某些实施例中,使用修复头来重新调整离子交换抛光垫。 典型的修复方法包括从离子交换抛光垫洗脱结合的铜,然后质子化。 结合铜的洗脱可以通过将离子交换抛光垫暴露于强酸溶液或类似的化学处理来实现。
    • 3. 发明授权
    • Method and apparatus for electrodialytic chemical mechanical polishing and deposition
    • 电渗析化学机械抛光和沉积的方法和装置
    • US06722950B1
    • 2004-04-20
    • US09993807
    • 2001-11-06
    • Sanjay DabralAnil K. Pant
    • Sanjay DabralAnil K. Pant
    • B24B100
    • B24B53/017B23H5/08B24B37/042B24B37/046B24D3/344B24D7/02H01L21/32125H01L21/7684Y10S451/908
    • Embodiments of the invention include methods and apparatus for electrodialytic polishing of various layers formed on semiconductor substrates. In certain embodiments the use of electrodialytic processes in conjunction with chemical mechanical forces to achieve a copper interconnect with a desired level of planarity and process performance. In certain embodiments electrodialytic polishing uses an electrodialytic polish pad, which is an active pad which has copper binding groups provided in its core structure and has an added capability of allowing electrical conductivity. An electrodialytic polish pad allows transfer of cations or anions through a membrane in the presence of an electric field and into a cathodic electrolyte. Under the influence of an electric field the electrodialytic polish pad and/or electrodialytic pads are continuously refreshed to bind cations.
    • 本发明的实施例包括用于在半导体衬底上形成的各种层的电渗析的方法和装置。 在某些实施方案中,使用电渗析方法结合化学机械力来实现具有期望水平的平面性和工艺性能的铜互连。 在某些实施方案中,电渗析抛光使用电渗析抛光垫,其为具有在其核心结构中提供的铜结合基团并具有允许导电性的附加能力的活性垫。 电渗透抛光垫允许阳离子或阴离子在电场存在下通过膜转移到阴极电解质中。 在电场的影响下,电渗析抛光垫和/或电渗析垫不断刷新以结合阳离子。
    • 7. 发明授权
    • Use of zeta potential during chemical mechanical polishing for end point detection
    • 化学机械抛光期间使用ζ电位进行终点检测
    • US06325706B1
    • 2001-12-04
    • US09182570
    • 1998-10-29
    • Wilbur C. KrusellAndrew J. NagengastAnil K. Pant
    • Wilbur C. KrusellAndrew J. NagengastAnil K. Pant
    • B24B2100
    • B24B37/013B24B21/08B24B49/16G01N1/32H01L21/3212H01L21/76807
    • A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next. In order to ensure that there is a noticeable difference in the shear force variation at the polishing end point, a slurry having a particular pH level is selected. The pH level ensures that the zeta potential changes noticeably from one material to the next, so as to induce a change in the shear force, which is detected by a change in the fluid pressure.
    • 一种利用传感器来监测来自位于抛光垫下方的流体轴承的流体压力以检测抛光终点的技术。 传感器位于线性抛光机的流体轴承的前缘,用于在半导体晶片上执行化学机械抛光。 传感器监测流体压力以检测抛光期间的流体压力的变化,该变化对应于当抛光从一个材料层转移到下一个材料层时的剪切力的变化。 为了确保在抛光终点处的剪切力变化存在显着的差异,选择具有特定pH值的浆料。 pH值确保ζ电位从一种材料明显变化到另一种材料,从而引起由流体压力变化所检测的剪切力的变化。