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1. 发明授权

US5618351A Thermal processing apparatus and process 失效
标题翻译：热处理设备及工艺
公开(公告)号：US5618351A
公开(公告)日：1997-04-08
申请号：US563875
申请日：1995-11-28
申请人： Terry A. Koble, Jr. , Anthony Dip , Erik H. Engdahl , Ian R. Oliver , Christopher T. Ratliff
发明人： Terry A. Koble, Jr. , Anthony Dip , Erik H. Engdahl , Ian R. Oliver , Christopher T. Ratliff
IPC分类号： H01L21/22 , H01L21/00 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67303 , H01L21/67109 , H01L21/67309
摘要： Thermal treatment boat comprising a cylinder having a central axis and a plurality of band slots having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along said central axis. At least one slot in each set extends around at least 180.degree. and less than of the full circumference of said cylinder. Pairs of adjacent band slots define an annular band therebetween. The height of each slot being from about 3.8 to 12.7 mm. Each of the bands having a height, Height.sub.Band, in mm, according to the equation: ##EQU1## wherein Height.sub.Band is always .ltoreq. wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat. The cylinder can include a wafer loading effector slot therethrough in a plane of the central axis extending along the length of the cylinder. Each band preferably includes wafer support means for supporting a wafer therein. The wafer support means preferably includes at least three inwardly extending projections. The spacing between the wafer edge and the cylinder wall is within the range of from about 1.5 to 6.3 mm. In the optimum process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage from thermal stresses to the wafers.
摘要翻译：热处理舟包括具有中心轴线的圆筒和多个带槽，所述多个带槽在垂直于所述中心轴线的平面中具有相对的上表面和下表面，并沿着所述中心轴线在预定位置间隔开。每组中的至少一个狭槽围绕至少180°并且小于所述气缸的整个圆周的周长。成对的相邻带隙在它们之间限定环形带。每个槽的高度为约3.8至12.7毫米。每个带具有高度，HeightBand，mm，根据以下等式：其中HeightBand总是

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