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1. 发明授权

US06844528B2 Hot wall rapid thermal processor 失效
标题翻译：热墙快速热处理器
公开(公告)号：US06844528B2
公开(公告)日：2005-01-18
申请号：US10262215
申请日：2002-09-30
申请人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
发明人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
IPC分类号： C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , F27B5/14 , F27B5/16 , F27D1/18 , F27D3/00 , H01L21/00
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
摘要翻译：一种用于晶片热处理的设备。该装置包括具有热源的加热室。冷却室位于加热室附近并且包括冷却源。晶片保持器构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。

2. 发明授权

US06900413B2 Hot wall rapid thermal processor 失效
标题翻译：热墙快速热处理器
公开(公告)号：US06900413B2
公开(公告)日：2005-05-31
申请号：US10261963
申请日：2002-09-30
申请人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
发明人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
IPC分类号： C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , F27B5/14 , F27B5/16 , F27D1/18 , F27D3/00 , H01L21/00
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
摘要翻译：公开了一种用于晶片热处理的设备。该装置包括具有热源的加热室。冷却室位于加热室附近并且包括冷却源。晶片保持器构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。

3. 发明授权

US6005225A Thermal processing apparatus 失效
标题翻译：热处理设备
公开(公告)号：US6005225A
公开(公告)日：1999-12-21
申请号：US827542
申请日：1997-03-28
申请人： Jeffrey M. Kowalski , Christopher T. Ratliff , Terry A. Koble, Jr. , Jon H. Pack , Michael H. Yang
发明人： Jeffrey M. Kowalski , Christopher T. Ratliff , Terry A. Koble, Jr. , Jon H. Pack , Michael H. Yang
IPC分类号： B01J19/00 , H01L21/00 , H01L21/22 , H05B3/06 , C23C16/00 , F27D15/02 , H05B3/66
CPC分类号： H01L21/67098
摘要： A vertical rapid heating furnace for treating semiconductor wafers comprising a hot wall reaction tube positioned within a cylindrical array of circular parallel heating elements substantially concentric therewith, each heating element being spaced from the hot wall reaction tube, each heating element comprising a coil of resistance heating conductor. The coiled resistance heating conductor can be a coil of resistance heating wire, the coil having an outer diameter of from 1 to 7 mm and supported in an annular heating element support. Each heating element support is dimensioned to support and accommodate the thermally expanded heating element supported therein at both the minimum and maximum furnace temperatures. Preferably, each annular heating element support is provided by an annular recess in the insulation surrounding the array of heating elements. The preferred vertical rapid heating and cooling furnace for treating semiconductor wafers comprises a hot wall reaction tube and a cylindrical array of circular parallel heating elements substantially concentric therewith and spaced therefrom to define a cooling gas passageway between said hot wall reaction tube and said cylindrical array of heating elements. The cooling gas passageway has lower and upper ends, the furnace has a cooling gas inlet opening in communication with said lower end, and a cooling gas exhaust outlet in communication with said upper end.
摘要翻译：一种用于处理半导体晶片的垂直快速加热炉，其包括位于与其基本上同心的圆形平行加热元件的圆柱形阵列内的热壁反应管，每个加热元件与热壁反应管间隔开，每个加热元件包括电阻加热线圈导体。线圈电阻加热导体可以是电阻加热线的线圈，线圈的外径为1至7mm，并且支撑在环形加热元件支架中。每个加热元件支撑件的尺寸被设计成在最小和最大炉温度下支撑和容纳支撑在其中的热膨胀的加热元件。优选地，每个环形加热元件支撑件由围绕加热元件阵列的绝缘体中的环形凹部提供。用于处理半导体晶片的优选的垂直快速加热和冷却炉包括热壁反应管和与其基本同心的圆形平行加热元件的圆柱形阵列，并与之隔开，以在所述热壁反应管和所述圆柱形阵列之间限定冷却气体通道加热元件。冷却气体通路具有下端和上端，炉具有与所述下端连通的冷却气体入口，以及与所述上端连通的冷却气体排出口。

4. 发明授权

US5618351A Thermal processing apparatus and process 失效
标题翻译：热处理设备及工艺
公开(公告)号：US5618351A
公开(公告)日：1997-04-08
申请号：US563875
申请日：1995-11-28
申请人： Terry A. Koble, Jr. , Anthony Dip , Erik H. Engdahl , Ian R. Oliver , Christopher T. Ratliff
发明人： Terry A. Koble, Jr. , Anthony Dip , Erik H. Engdahl , Ian R. Oliver , Christopher T. Ratliff
IPC分类号： H01L21/22 , H01L21/00 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67303 , H01L21/67109 , H01L21/67309
摘要： Thermal treatment boat comprising a cylinder having a central axis and a plurality of band slots having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along said central axis. At least one slot in each set extends around at least 180.degree. and less than of the full circumference of said cylinder. Pairs of adjacent band slots define an annular band therebetween. The height of each slot being from about 3.8 to 12.7 mm. Each of the bands having a height, Height.sub.Band, in mm, according to the equation: ##EQU1## wherein Height.sub.Band is always .ltoreq. wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat. The cylinder can include a wafer loading effector slot therethrough in a plane of the central axis extending along the length of the cylinder. Each band preferably includes wafer support means for supporting a wafer therein. The wafer support means preferably includes at least three inwardly extending projections. The spacing between the wafer edge and the cylinder wall is within the range of from about 1.5 to 6.3 mm. In the optimum process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage from thermal stresses to the wafers.
摘要翻译：热处理舟包括具有中心轴线的圆筒和多个带槽，所述多个带槽在垂直于所述中心轴线的平面中具有相对的上表面和下表面，并沿着所述中心轴线在预定位置间隔开。每组中的至少一个狭槽围绕至少180°并且小于所述气缸的整个圆周的周长。成对的相邻带隙在它们之间限定环形带。每个槽的高度为约3.8至12.7毫米。每个带具有高度，HeightBand，mm，根据以下等式：其中HeightBand总是

5. 发明授权

US06462310B1 Hot wall rapid thermal processor 失效
标题翻译：热墙快速热处理器
公开(公告)号：US06462310B1
公开(公告)日：2002-10-08
申请号：US09638113
申请日：2000-08-11
申请人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
发明人： Christopher T. Ratliff , Jeffrey M. Kowalski , Taiqing Qiu
IPC分类号： F27B514
CPC分类号： C23C16/463 , C23C16/455 , C23C16/4584 , C30B25/10 , C30B25/14 , F27B5/14 , F27B2005/161 , F27D1/1858 , F27D2003/0075 , H01L21/67109
摘要： An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is. configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.
摘要翻译：公开了一种用于晶片热处理的设备。该装置包括具有热源的加热室。冷却室位于加热室附近并且包括冷却源。晶圆座是。构造成通过通道在冷却室和加热室之间移动，并且一个或多个快门限定通道的尺寸。一个或多个百叶窗可以在晶片保持器可以穿过通道的打开位置和限定通道的阻塞位置之间移动，该通道小于当快门处于打开位置时限定的通道。

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