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    • 2. 发明授权
    • Depositing tungsten into high aspect ratio features
    • 将钨沉积成高纵横比特征
    • US09034768B2
    • 2015-05-19
    • US12833823
    • 2010-07-09
    • Anand ChandrashekarRaashina HumayunMichal DanekAaron R. FellisSean Chang
    • Anand ChandrashekarRaashina HumayunMichal DanekAaron R. FellisSean Chang
    • H01L21/302C23F4/00C23C16/04C23C16/06H01L21/768
    • C23F4/00C23C16/045C23C16/06H01L21/76877
    • Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.
    • 提供了用含钨材料填充高纵横比特征的方法和装置。 该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。 该方法继续选择性地去除沉积层的一部分,使得在特征开口附近更多的材料在特征内部被移除。 在某些实施方案中,可以在质量传输限制条件下进行移除,在特征内可用蚀刻剂较少,而不是靠近其开口。 在引入处理室之前和/或在室内时,蚀刻剂物质被激活。 在具体实施方案中,活化物质的重组在去除期间基本上受到限制和/或控制,例如在小于约250℃和/或小于约5托下进行操作。
    • 5. 发明申请
    • CAPACITIVE TOUCH APPARATUS
    • 电容触摸装置
    • US20120139867A1
    • 2012-06-07
    • US13293467
    • 2011-11-10
    • Sean CHANGChii-How CHANGChin-Wei KUO
    • Sean CHANGChii-How CHANGChin-Wei KUO
    • G06F3/044
    • G06F3/044G06F3/0416
    • A capacitive touch apparatus includes a first touch unit, a first voltage difference retrieving unit, a first feedback signal generating unit, and a control unit. The first touch unit has a touch substrate and a first conductive layer. The first voltage difference retrieving unit is electrically connected with the first conductive layer and outputs a first voltage signal and a second voltage signal. The first feedback signal generating unit outputs a first feedback signal according to the variation of the voltage difference between the first voltage signal and the second voltage signal. The control unit receives the first feedback signal for computing the touch position and outputs a power signal to the first voltage difference retrieving unit. Hence, the capacitive touch apparatus improves the sensing speed and reduces the manufacturing cost by the simple circuit design.
    • 电容式触摸装置包括第一触摸单元,第一电压差检索单元,第一反馈信号生成单元和控制单元。 第一触摸单元具有触摸基板和第一导电层。 第一电压差检索单元与第一导电层电连接并输出第一电压信号和第二电压信号。 第一反馈信号发生单元根据第一电压信号和第二电压信号之间的电压差的变化输出第一反馈信号。 控制单元接收用于计算触摸位置的第一反馈信号,并将功率信号输出到第一电压差检索单元。 因此,电容式触摸装置通过简单的电路设计提高了感测速度并降低了制造成本。
    • 6. 发明授权
    • Depositing tungsten into high aspect ratio features
    • 将钨沉积成高纵横比特征
    • US08124531B2
    • 2012-02-28
    • US13016656
    • 2011-01-28
    • Anand ChandrashekarRaashina HumayunMichal DanekAaron R. FellisSean Chang
    • Anand ChandrashekarRaashina HumayunMichal DanekAaron R. FellisSean Chang
    • H01L21/44
    • H01L21/486H01L21/28556H01L21/32136H01L21/76865H01L21/76877
    • Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
    • 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中,该方法包括沉积含钨材料的初始层,然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中,剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化,在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。