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1. 发明授权

US08409987B2 Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics 有权
标题翻译：沉积具有低电阻率和坚固的微粘附特性的薄钨膜的方法
公开(公告)号：US08409987B2
公开(公告)日：2013-04-02
申请号：US13244016
申请日：2011-09-23
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michal Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michal Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

2. 发明授权

US08058170B2 Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics 有权
标题翻译：沉积具有低电阻率和坚固的微粘附特性的薄钨膜的方法
公开(公告)号：US08058170B2
公开(公告)日：2011-11-15
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

3. 发明申请

US20100159694A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20100159694A1
公开(公告)日：2010-06-24
申请号：US12407541
申请日：2009-03-19
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/285 , B05C11/00
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

4. 发明申请

US20120015518A1 METHOD FOR DEPOSITING THIN TUNGSTEN FILM WITH LOW RESISTIVITY AND ROBUST MICRO-ADHESION CHARACTERISTICS 有权
标题翻译：沉积具有低电阻率和稳定的微粘结特性的薄膜的方法
公开(公告)号：US20120015518A1
公开(公告)日：2012-01-19
申请号：US13244016
申请日：2011-09-23
申请人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
发明人： Anand Chandrashekar , Mirko Glass , Raashina Humayun , Michael Danek , Kaihan Ashtiani , Feng Chen , Lana Hiului Chan , Anil Mane
IPC分类号： H01L21/283 , C23C16/455 , C23C16/52 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45534 , H01L21/28562 , H01L21/76864 , H01L21/76876 , H01L21/76877
摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
摘要翻译：提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。处理操作降低沉积的钨膜的电阻率。在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

5. 发明申请

US20080254623A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
标题翻译：用于生长高电阻率和小特征的低电阻电阻的方法
公开(公告)号：US20080254623A1
公开(公告)日：2008-10-16
申请号：US12030645
申请日：2008-02-13
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/44
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得大约14微米的电阻率。

6. 发明授权

US08409985B2 Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
标题翻译：生长低电阻率钨用于高纵横比和小特征的方法
公开(公告)号：US08409985B2
公开(公告)日：2013-04-02
申请号：US13095734
申请日：2011-04-27
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

7. 发明授权

US07955972B2 Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
标题翻译：生长低电阻率钨用于高纵横比和小特征的方法
公开(公告)号：US07955972B2
公开(公告)日：2011-06-07
申请号：US12030645
申请日：2008-02-13
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/4763
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

8. 发明申请

US20110223763A1 METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
标题翻译：用于生长高电阻率和小特征的低电阻电阻的方法
公开(公告)号：US20110223763A1
公开(公告)日：2011-09-15
申请号：US13095734
申请日：2011-04-27
申请人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
发明人： Lana Hiului Chan , Kaihan Ashtiani , Joshua Collins
IPC分类号： H01L21/768
CPC分类号： C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.
摘要翻译：本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。使用该工艺，共形钨成核层可沉积至约10埃的厚度。然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

9. 发明授权

US08062977B1 Ternary tungsten-containing resistive thin films 有权
标题翻译：三元含钨电阻薄膜
公开(公告)号：US08062977B1
公开(公告)日：2011-11-22
申请号：US12363330
申请日：2009-01-30
申请人： Kaihan Ashtiani , Raashina Humayun , Girish Dixit , Anna Battaglia , Stefano Rassiga
发明人： Kaihan Ashtiani , Raashina Humayun , Girish Dixit , Anna Battaglia , Stefano Rassiga
IPC分类号： H01L21/44
CPC分类号： H01L45/126 , H01L45/06 , H01L45/1233 , H01L45/16
摘要： Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 μΩ-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive, continuous film is formed.
摘要翻译：提供由包含W，C，O，N和Si三种或更多种的高电阻率三元和四元薄膜制成的加热元件。薄膜在50至60埃处具有至少约1000μΩ-OHgr·-cm的电阻率。三元和四元膜在退火时具有改善的二元膜的稳定性。还提供了沉积薄膜的方法。所述方法包括在有机金属钨前驱体上沉积薄膜，使得形成高电阻连续的薄膜。

10. 发明授权

US08053365B2 Methods for forming all tungsten contacts and lines 有权
标题翻译：形成所有钨触点和线的方法
公开(公告)号：US08053365B2
公开(公告)日：2011-11-08
申请号：US11963698
申请日：2007-12-21
申请人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
发明人： Raashina Humayun , Kaihan Ashtiani , Karl B. Levy
IPC分类号： H01L21/302
CPC分类号： H01L21/76843 , C23C16/30 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
摘要翻译：提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。

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