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1. 发明申请

US20060238217A1 Active interconnects and control points in integrated circuits 有权
标题翻译：集成电路中的有源互连和控制点
公开(公告)号：US20060238217A1
公开(公告)日：2006-10-26
申请号：US11112795
申请日：2005-04-21
申请人： R. Williams , Philip Kuekes , Frederick Perner , Greg Snider , Duncan Stewart
发明人： R. Williams , Philip Kuekes , Frederick Perner , Greg Snider , Duncan Stewart
IPC分类号： H03K19/003
CPC分类号： H05K7/1092 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments of the present invention, tunable resistors are introduced at the interconnect layer of integrated circuits in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronic characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.
摘要翻译：在本发明的各种实施例中，在集成电路的互连层处引入可调电阻器，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或者在制造后配置集成电路的装置。例如，当诸如晶体管的某些内部组件由于制造缺陷而没有指定的电子特性时，可以使用根据本发明的实施例的包括在集成电路的互连层中的可调电阻器的可变电阻的调整以调整内部电压和/或电平以便改善有缺陷的部件。在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。在某些情况下，可能会关闭组件和模块，而在其他情况下，可能会打开组件和模块。

2. 发明申请

US20070236757A1 Rich color image processing method and apparatus 审中-公开
标题翻译：丰富的彩色图像处理方法和装置
公开(公告)号：US20070236757A1
公开(公告)日：2007-10-11
申请号：US11402154
申请日：2006-04-10
申请人： Duncan Stewart , Shih-Yuan Wang , Philip Kuekes , Alexandre Bratkovski , R. Williams
发明人： Duncan Stewart , Shih-Yuan Wang , Philip Kuekes , Alexandre Bratkovski , R. Williams
IPC分类号： H04N1/46
CPC分类号： H04N9/045 , G02B26/001 , H04N5/2254 , H04N9/3108
摘要： Techniques for rich color image processing are disclosed. The techniques include using an array of tunable optical filter elements to define pixels of an image. The tunable optical filter elements are tuned over a range of optical frequencies to control the color filtering of the individual pixels. Exemplary embodiments for image capture and projection are illustrated.
摘要翻译：公开了用于丰富彩色图像处理的技术。这些技术包括使用可调谐光学滤光器元件的阵列来定义图像的像素。可调谐滤光器元件在一定范围的光学频率上被调谐以控制各个像素的滤色。示出了用于图像捕获和投影的示例性实施例。

3. 发明申请

US20070117256A1 Control layer for a nanoscale electronic switching device 有权
标题翻译：用于纳米级电子开关器件的控制层
公开(公告)号：US20070117256A1
公开(公告)日：2007-05-24
申请号：US11287113
申请日：2005-11-23
申请人： Duncan Stewart , Douglas Ohlberg , R. Williams , Philip Kuekes
发明人： Duncan Stewart , Douglas Ohlberg , R. Williams , Philip Kuekes
IPC分类号： H01L29/02 , H01L51/40
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
摘要翻译：公开了一种用于纳米级电子开关器件的结的控制层。控制层包括与纳米级切换装置中的连接层和至少一个电极化学相容的材料。控制层适于在装置的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

4. 发明申请

US20070252128A1 Switching device and methods for controlling electron tunneling therein 有权
标题翻译：用于控制电子隧穿的开关装置和方法
公开(公告)号：US20070252128A1
公开(公告)日：2007-11-01
申请号：US11414578
申请日：2006-04-28
申请人： R. Williams , Zhiyong Li , Douglas Ohlberg , Philip Kuekes , Duncan Stewart
发明人： R. Williams , Zhiyong Li , Douglas Ohlberg , Philip Kuekes , Duncan Stewart
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/77 , H01L51/0591
摘要： A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
摘要翻译：开关装置包括至少一个底部电极和至少一个顶部电极。顶部电极以非零角度穿过底部电极，从而形成结。在底电极或顶电极中的至少一个上建立金属氧化物层。在连接处建立了包括有机分子单层和水分子源的分子层。在引入正向偏压时，分子层促进电极之间的氧化还原反应，从而减少电极之间的隧道间隙。

5. 发明申请

US20060280414A1 Fiber-coupled single photon source 有权
标题翻译：光纤耦合单光子源
公开(公告)号：US20060280414A1
公开(公告)日：2006-12-14
申请号：US11149511
申请日：2005-06-10
申请人： Raymond Beausoleil , Sean Spillane , Philip Kuekes , Duncan Stewart , M. Islam
发明人： Raymond Beausoleil , Sean Spillane , Philip Kuekes , Duncan Stewart , M. Islam
IPC分类号： G02B6/02 , G02B6/032
CPC分类号： G02B6/4202 , B82Y20/00 , G02B6/02314 , G02B6/02328 , G02B6/107 , G02B6/423 , H01S5/02284 , H01S5/026 , H01S5/1032 , H01S5/1042 , H01S5/105 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S5/423 , Y10S977/951
摘要： A device comprising a single photon generator and a waveguide, wherein a single photon generated by the single photon generator is coupled to the waveguide
摘要翻译：一种包括单个光子发生器和波导的器件，其中由单个光子发生器产生的单个光子耦合到波导

6. 发明申请

US20060097389A1 Nanowire interconnection and nano-scale device applications 失效
标题翻译：纳米线互连和纳米级器件应用
公开(公告)号：US20060097389A1
公开(公告)日：2006-05-11
申请号：US10982051
申请日：2004-11-05
申请人： M. Islam , Philip Kuekes , Shih-Yuan Wang , Duncan Stewart , Shashank Sharma
发明人： M. Islam , Philip Kuekes , Shih-Yuan Wang , Duncan Stewart , Shashank Sharma
IPC分类号： H01L23/48
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01S5/0261 , H01S5/041 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S5/3428 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/938
摘要： A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.
摘要翻译：纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线列，以连接这些层。纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

7. 发明申请

US20070109014A1 NANOSCALE LATCH-ARRAY PROCESSING ENGINES 有权
标题翻译： NANOSCALE LATCH-ARRAY加工发动机
公开(公告)号：US20070109014A1
公开(公告)日：2007-05-17
申请号：US11192197
申请日：2005-07-27
申请人： Gregory Snider , Philip Kuekes , Duncan Stewart
发明人： Gregory Snider , Philip Kuekes , Duncan Stewart
IPC分类号： H03K19/173
CPC分类号： B82Y10/00 , G06N99/007 , H01L27/101
摘要： One embodiment of the present invention is an array of nanoscale latches interconnected by a nanowire bus to form a latch array. Each nanoscale latch in the nanoscale-latch array serves as a nanoscale register, and is driven by a nanoscale control line. Primitive operations for the latch array can be defined as sequences of one or more inputs to one or more of the nanowire data bus and nanoscale control lines. In various latch-array embodiments of the present invention, information can be transferred from one nanoscale latch to another nanoscale latch in a controlled fashion, and sequences of information-transfer operations can be devised to implement arbitrary Boolean logic operations and operators, including NOT, AND, OR, XOR, NOR, NAND, and other such Boolean logic operators and operations, as well as input and output functions. Nanoscale-latch arrays can be combined and interconnected in an almost limitless number of different ways to construct arbitrarily complex, sequential, parallel, or both parallel and sequential computing engines that represent additional embodiments of the present invention.
摘要翻译：本发明的一个实施例是通过纳米线总线互连以形成锁存阵列的纳米级锁存器的阵列。纳米尺度锁存阵列中的每个纳米级锁存器用作纳米尺度寄存器，并由纳米尺度控制线驱动。锁存阵列的原始操作可以被定义为一个或多个输入到纳米线数据总线和纳米尺度控制线中的一个或多个的序列。在本发明的各种锁存阵列实施例中，可以以受控的方式将信息从一个纳米级锁存器传送到另一个纳米级锁存器，并且可以设计信息传送操作的序列以实现任意的布尔逻辑运算，并且运算符包括NOT， AND，OR，XOR，NOR，NAND和其他这样的布尔逻辑运算符和操作，以及输入和输出功能。纳秒级锁存器阵列可以以几乎无限数量的不同方式组合和互连，以构造代表本发明附加实施例的任意复杂，顺序，并行或并行和顺序的计算引擎。

8. 发明申请

US20060240681A1 Three-dimensional nanoscale crossbars 有权
标题翻译：三维纳米级横条
公开(公告)号：US20060240681A1
公开(公告)日：2006-10-26
申请号：US11114307
申请日：2005-04-25
申请人： R. Williams , Philip Kuekes
发明人： R. Williams , Philip Kuekes
IPC分类号： H01L21/00
CPC分类号： H04L49/40 , B82Y10/00 , G11C13/02 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H04L49/101 , Y10S977/762 , Y10S977/767
摘要： Various embodiments of the present invention include three-dimensional, at least partially nanoscale, electronic circuits and devices in which signals can be routed in three independent directions, and in which electronic components can be fabricated at junctions interconnected by internal signal lines. The three-dimensional, at least partially nanoscale, electronic circuits and devices include layers, the nanowire or microscale-or-submicroscale/nanowire junctions of each of which may be economically and efficiently fabricated as one type of electronic component. Various embodiments of the present invention include nanoscale memories, nanoscale programmable arrays, nanoscale multiplexers and demultiplexers, and an almost limitless number of specialized nanoscale circuits and nanoscale electronic components.
摘要翻译：本发明的各种实施例包括三维，至少部分纳米级的电子电路和装置，其中信号可以在三个独立的方向上布线，并且其中电子部件可以在通过内部信号线互连的连接点处制造。三维，至少部分纳米级的电子电路和器件包括层，其中每一个的纳米线或微米级或亚微米级/纳米线结可以经济地和有效地制造为一种类型的电子部件。本发明的各种实施例包括纳米级存储器，纳米级可编程阵列，纳米级多路复用器和解复用器，以及几乎无限数量的专用纳米尺度电路和纳米级电子部件。

9. 发明申请

US20080118201A1 Photonic interconnect method 有权
标题翻译：光子互连方法
公开(公告)号：US20080118201A1
公开(公告)日：2008-05-22
申请号：US12008605
申请日：2008-01-11
申请人： Raymond Beausoleil , Philip Kuekes , William Munro , Timothy Spiller , R. Williams , Sean Barrett
发明人： Raymond Beausoleil , Philip Kuekes , William Munro , Timothy Spiller , R. Williams , Sean Barrett
IPC分类号： G02B6/12
CPC分类号： G02F1/01 , B82Y20/00 , G02B6/12007 , G02B6/1225 , G02B6/43 , G02F2202/32 , G02F2203/585 , H04B10/801
摘要： A photonic interconnect method avoids high capacitance electric interconnects by using optical signals to communicate data between devices. The method can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers, modulators, and detectors, which can be fabricated at defects in a photonic bandgap crystal, can be employed for the photonic interconnect method. The interconnect method can be used for both classical and quantum information processing.
摘要翻译：光子互连方法通过使用光信号在设备之间传送数据来避免高电容电互连。该方法可以通过将逻辑地址映射到频带来提供大量并行信息输出，使得所选频带的调制可以对与逻辑地址相对应的特定位置的信息进行编码。可以在光子互连方法中使用可在光子带隙晶体的缺陷处制造的波长特异性定向耦合器，调制器和检测器。互连方法可用于经典和量子信息处理。

10. 发明申请

US20070101309A1 Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points 有权
公开(公告)号：US20070101309A1
公开(公告)日：2007-05-03
申请号：US11264464
申请日：2005-11-01
申请人： Wei Wu , Philip Kuekes , R. Williams
发明人： Wei Wu , Philip Kuekes , R. Williams
IPC分类号： G06F17/50
CPC分类号： G11C13/02 , B82Y10/00 , G11C8/10 , G11C11/54 , G11C13/0023 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/285 , Y10S977/762 , Y10S977/932
摘要： Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires and a second layer of two or more address wires that overlays the first layer. The nanoscale device may also include an intermediate layer positioned between the first layer and the second layer. Two or more redundant electrical component patterns may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.

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