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1. 发明申请

US20120113706A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 有权
标题翻译：基于混合金属化合物的成像仪
公开(公告)号：US20120113706A1
公开(公告)日：2012-05-10
申请号：US13383572
申请日：2009-09-04
申请人： R. Stanley Williams , Jinhua ` Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
发明人： R. Stanley Williams , Jinhua ` Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100′, 100″) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100′) and an ON-switched diode (100″) are also provided, A method of operating the memristor is further provided.
摘要翻译：基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）; 第二电极（120）; 与至少一个完全氧化相的层（110,1 110a，110b）物理接触的混合金属 - 价相的层（105）。混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场（125）而漂移进入和离开完全氧化相。第一和第二电极中的一个与混合金属价态层的层或完全氧化相的层（110a）电接触，另一个与层（或其他层（110b））电接触））的完全氧化相。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。

2. 发明授权

US08891284B2 Memristors based on mixed-metal-valence compounds 有权
标题翻译：基于混合金属化合物的忆阻器
公开(公告)号：US08891284B2
公开(公告)日：2014-11-18
申请号：US13383572
申请日：2009-09-04
申请人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
发明人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00 , G11C13/00 , H01L29/861
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属价化合物的忆阻器包括：第一电极; 第二电极; 与至少一层完全氧化相物理接触的混合金属价态相的一层。混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场漂移进入和离开完全氧化相。第一和第二电极之一与混合金属化合物相的层或完全氧化相的层电接触，另一个与完全氧化的层（或其它层）电接触相。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。还提供了可逆二极管和ON开关二极管。还提供了一种操作忆阻器的方法。

3. 发明申请

US20120127780A1 MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL 有权
标题翻译：使用反馈控制的存储器电阻调整
公开(公告)号：US20120127780A1
公开(公告)日：2012-05-24
申请号：US13387307
申请日：2010-02-09
申请人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
发明人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
IPC分类号： G11C11/00
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译：提供了与存储电阻相关的装置和方法。反馈控制器将调整信号应用于忆阻器。在调节期间，反馈控制器感测到避震器的非易失性电阻。忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。

4. 发明申请

US20110051310A1 Memcapacitive Devices 有权
标题翻译： Memcapacitive设备
公开(公告)号：US20110051310A1
公开(公告)日：2011-03-03
申请号：US12548124
申请日：2009-08-26
申请人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
发明人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
IPC分类号： H01G7/06 , H01G7/00
CPC分类号： H01G7/06 , Y10T29/43
摘要： A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
摘要翻译：电容器件包括具有第一端和第二端的第一电极和第二电极。该器件具有介于第一电极和第二电极之间的存储电容矩阵。存储电容矩阵相对于第一电极和第二电极两端的电压具有非线性电容。所述存储电容矩阵被配置为通过以下至少之一来改变施加在所述第一端上的信号：a）改变所述信号的上升时间和下降时间中的至少一个，以及b）基于所述信号延迟所述信号的传输在第一电极和第二电极上施加编程电压。

5. 发明授权

US08493138B2 Memcapacitive devices 有权
标题翻译： Memcapacitive设备
公开(公告)号：US08493138B2
公开(公告)日：2013-07-23
申请号：US12548124
申请日：2009-08-26
申请人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
发明人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
IPC分类号： G11C11/00
CPC分类号： H01G7/06 , Y10T29/43
摘要： A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
摘要翻译：电容器件包括具有第一端和第二端的第一电极和第二电极。该器件具有介于第一电极和第二电极之间的存储电容矩阵。存储电容矩阵相对于第一电极和第二电极两端的电压具有非线性电容。所述存储电容矩阵被配置为通过以下至少之一来改变施加在所述第一端上的信号：a）改变所述信号的上升时间和下降时间中的至少一个，以及b）基于所述信号延迟所述信号的传输在第一电极和第二电极上施加编程电压。

6. 发明授权

US09196354B2 Memory resistor adjustment using feedback control 有权
标题翻译：使用反馈控制的存储电阻调节
公开(公告)号：US09196354B2
公开(公告)日：2015-11-24
申请号：US13387307
申请日：2010-02-09
申请人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
发明人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
IPC分类号： G11C11/56 , G11C13/00 , G11C11/54
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译：提供了与存储电阻相关的装置和方法。反馈控制器将调整信号应用于忆阻器。在调节期间，反馈控制器感测到避震器的非易失性电阻。忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。

7. 发明授权

US09024285B2 Nanoscale switching devices with partially oxidized electrodes 有权
标题翻译：具有部分氧化电极的纳米开关器件
公开(公告)号：US09024285B2
公开(公告)日：2015-05-05
申请号：US13636814
申请日：2010-04-19
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1253 , H01L45/146 , Y10S438/90
摘要： A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：提供了纳米尺度的开关装置。该装置包括：纳米级宽度的第一电极; 纳米级宽度的第二电极; 有源区域设置在第一和第二电极之间，有源区域具有非导电部分，其包括电子半导体或名义绝缘以及能够承载一种掺杂剂并在电场下传输掺杂剂的弱离子导体开关材料，以及用作掺杂剂的源或汇的源部分; 以及形成在第一电极之间，第一电极和有源区之间或形成在第二电极上的第二电极和有源区之间的氧化物层。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

8. 发明授权

US08519372B2 Electroforming-free nanoscale switching device 有权
标题翻译：无电成形纳米级开关器件
公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
申请人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
发明人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

9. 发明申请

US20110309321A1 MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES 有权
标题翻译：具有包含多个相位的复合材料的开关层的电容器
公开(公告)号：US20110309321A1
公开(公告)日：2011-12-22
申请号：US12819763
申请日：2010-06-21
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L27/24 , H01L21/26 , H01L45/00
CPC分类号： H01L27/24 , G11C13/0007 , G11C2213/52 , H01L45/04 , H01L45/145
摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
摘要翻译：公开了具有包括多相复合的开关层的忆阻器。忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相，在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。还公开了制造忆阻器和使用忆阻器的横杆的方法。

10. 发明授权

US08415652B2 Memristors with a switching layer comprising a composite of multiple phases 有权
标题翻译：具有包括多相复合材料的开关层的忆阻器
公开(公告)号：US08415652B2
公开(公告)日：2013-04-09
申请号：US12819763
申请日：2010-06-21
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L29/02
CPC分类号： H01L27/24 , G11C13/0007 , G11C2213/52 , H01L45/04 , H01L45/145
摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
摘要翻译：公开了具有包括多相复合的开关层的忆阻器。忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相，在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。还公开了制造忆阻器和使用忆阻器的横杆的方法。

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