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1. 发明申请

US20120113706A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 有权
标题翻译：基于混合金属化合物的成像仪
公开(公告)号：US20120113706A1
公开(公告)日：2012-05-10
申请号：US13383572
申请日：2009-09-04
申请人： R. Stanley Williams , Jinhua ` Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
发明人： R. Stanley Williams , Jinhua ` Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100′, 100″) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100′) and an ON-switched diode (100″) are also provided, A method of operating the memristor is further provided.
摘要翻译：基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）; 第二电极（120）; 与至少一个完全氧化相的层（110,1 110a，110b）物理接触的混合金属 - 价相的层（105）。混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场（125）而漂移进入和离开完全氧化相。第一和第二电极中的一个与混合金属价态层的层或完全氧化相的层（110a）电接触，另一个与层（或其他层（110b））电接触））的完全氧化相。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。

2. 发明授权

US08891284B2 Memristors based on mixed-metal-valence compounds 有权
标题翻译：基于混合金属化合物的忆阻器
公开(公告)号：US08891284B2
公开(公告)日：2014-11-18
申请号：US13383572
申请日：2009-09-04
申请人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
发明人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00 , G11C13/00 , H01L29/861
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属价化合物的忆阻器包括：第一电极; 第二电极; 与至少一层完全氧化相物理接触的混合金属价态相的一层。混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场漂移进入和离开完全氧化相。第一和第二电极之一与混合金属化合物相的层或完全氧化相的层电接触，另一个与完全氧化的层（或其它层）电接触相。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。还提供了可逆二极管和ON开关二极管。还提供了一种操作忆阻器的方法。

3. 发明授权

US09196354B2 Memory resistor adjustment using feedback control 有权
标题翻译：使用反馈控制的存储电阻调节
公开(公告)号：US09196354B2
公开(公告)日：2015-11-24
申请号：US13387307
申请日：2010-02-09
申请人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
发明人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
IPC分类号： G11C11/56 , G11C13/00 , G11C11/54
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译：提供了与存储电阻相关的装置和方法。反馈控制器将调整信号应用于忆阻器。在调节期间，反馈控制器感测到避震器的非易失性电阻。忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。

4. 发明申请

US20120127780A1 MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL 有权
标题翻译：使用反馈控制的存储器电阻调整
公开(公告)号：US20120127780A1
公开(公告)日：2012-05-24
申请号：US13387307
申请日：2010-02-09
申请人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
发明人： John Paul Strachan , Julien Borghetti , Matthew D. Pickett , Gilberto Ribeiro , Jianhua Yang
IPC分类号： G11C11/00
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译：提供了与存储电阻相关的装置和方法。反馈控制器将调整信号应用于忆阻器。在调节期间，反馈控制器感测到避震器的非易失性电阻。忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。

5. 发明申请

US20110051310A1 Memcapacitive Devices 有权
标题翻译： Memcapacitive设备
公开(公告)号：US20110051310A1
公开(公告)日：2011-03-03
申请号：US12548124
申请日：2009-08-26
申请人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
发明人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
IPC分类号： H01G7/06 , H01G7/00
CPC分类号： H01G7/06 , Y10T29/43
摘要： A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
摘要翻译：电容器件包括具有第一端和第二端的第一电极和第二电极。该器件具有介于第一电极和第二电极之间的存储电容矩阵。存储电容矩阵相对于第一电极和第二电极两端的电压具有非线性电容。所述存储电容矩阵被配置为通过以下至少之一来改变施加在所述第一端上的信号：a）改变所述信号的上升时间和下降时间中的至少一个，以及b）基于所述信号延迟所述信号的传输在第一电极和第二电极上施加编程电压。

6. 发明授权

US08493138B2 Memcapacitive devices 有权
标题翻译： Memcapacitive设备
公开(公告)号：US08493138B2
公开(公告)日：2013-07-23
申请号：US12548124
申请日：2009-08-26
申请人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
发明人： John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
IPC分类号： G11C11/00
CPC分类号： H01G7/06 , Y10T29/43
摘要： A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
摘要翻译：电容器件包括具有第一端和第二端的第一电极和第二电极。该器件具有介于第一电极和第二电极之间的存储电容矩阵。存储电容矩阵相对于第一电极和第二电极两端的电压具有非线性电容。所述存储电容矩阵被配置为通过以下至少之一来改变施加在所述第一端上的信号：a）改变所述信号的上升时间和下降时间中的至少一个，以及b）基于所述信号延迟所述信号的传输在第一电极和第二电极上施加编程电压。

7. 发明授权

US09276204B2 Memristor with channel region in thermal equilibrium with containing region 有权
标题翻译：带通道区域的忆阻器与含有区域的热平衡
公开(公告)号：US09276204B2
公开(公告)日：2016-03-01
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

8. 发明申请

US20140346426A1 Memristor with Channel Region in Thermal Equilibrium with Containing Region 有权
标题翻译：带通道区的忆阻器与包含区域的热平衡
公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

9. 发明申请

US20140112059A1 HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 有权
标题翻译：高可靠性高速电容器
公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。

10. 发明授权

US09165645B2 High-reliability high-speed memristor 有权
标题翻译：高可靠性高速忆阻器
公开(公告)号：US09165645B2
公开(公告)日：2015-10-20
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道费米玻璃材料。

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