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1. 发明授权

US06245672B1 Method of forming diffusion barriers for copper metallization in integrated cirucits 有权
标题翻译：在集成的铁芯中形成铜金属化的扩散阻挡层的方法
公开(公告)号：US06245672B1
公开(公告)日：2001-06-12
申请号：US09177412
申请日：1998-10-23
申请人： Qi-Zhong Hong , Wei-Yung Hsu , Jiong-Ping Lu , Robert H. Havemann
发明人： Qi-Zhong Hong , Wei-Yung Hsu , Jiong-Ping Lu , Robert H. Havemann
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , H01L21/76843 , H01L21/76855
摘要： An integrated circuit structure including copper metallization (20, 32, 42), and a method of fabricating the same are disclosed. The structure includes a doped region (7) of a silicon substrate (9), which is typically clad with a metal silicide film (12) formed by way of direct react silicidation. At contact locations (CT) at which the copper metallization (20, 32, 42) is to make contact to the doped region (7), a chemically-densified barrier layer (16, 30, 38) provides a diffusion barrier to the overlying copper metallization (20, 32, 42). The chemically-densified barrier layer (16, 30, 38) is formed by an anneal of the structure to react impurities (14, 28, 36) with the underlying refractory-metal-based film (12, 34); the impurities are introduced by way of wet chemistry, plasma bombardment, or from the ambient in which the structure is annealed.
摘要翻译：公开了一种包括铜金属化（20,32,42）的集成电路结构及其制造方法。该结构包括硅衬底（9）的掺杂区域（7），其通常用通过直接反应硅化形成的金属硅化物膜（12）包覆。在铜金属化层（20,32,42）将与掺杂区域（7）接触的接触位置（CT）处，化学致密化的势垒层（16,30,38）为覆盖层铜金属化（20,32,42）。化学致密化的阻挡层（16,30,38）通过该结构的退火形成，以使杂质（14,28,36）与下面的耐熔金属基膜（12,34）反应; 杂质通过湿化学，等离子体轰击或结构退火的环境引入。

2. 发明授权

US6120842A TiN+Al films and processes 失效
标题翻译： TiN + Al膜和工艺
公开(公告)号：US6120842A
公开(公告)日：2000-09-19
申请号：US954989
申请日：1997-10-21
申请人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong
发明人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong
IPC分类号： H01L21/02 , H01L21/285 , H01L21/302
CPC分类号： H01L28/75 , H01L21/28556 , H01L21/28568 , H01L28/55
摘要： A process for producing conformal and stable TiN+Al films, which provides flexibility in selecting the chemical composition and layering. In this new process, porous TiCN is first deposited, and then Al is incorporated by exposing the porous film to CVD aluminum conditions at low temperatures.
摘要翻译：一种生产保形稳定的TiN + Al薄膜的方法，为选择化学成分和分层提供了灵活性。在该新方法中，首先沉积多孔TiCN，然后通过在低温下将多孔膜暴露于CVD铝条件下而引入Al。

3. 发明授权

US06680249B2 Si-rich surface layer capped diffusion barriers 有权
标题翻译：富硅表面层封端扩散阻挡层
公开(公告)号：US06680249B2
公开(公告)日：2004-01-20
申请号：US10185383
申请日：2002-06-28
申请人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong , Richard A. Faust
发明人： Jiong-Ping Lu , Wei-Yung Hsu , Qi-Zhong Hong , Richard A. Faust
IPC分类号： H01L2144
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76843 , H01L21/76846 , H01L21/76856
摘要： A copper interconnect having a transition metal-nitride barrier (106) with a thin metal-silicon-nitride cap (108). A transition metal-nitride barrier (106) is formed over the structure. Then the barrier (106) is annealed in a Si-containing ambient to form a silicon-rich capping layer (108) at the surface of the barrier (106). The copper (110) is then deposited over the silicon-rich capping layer (108) with good adhesion.
摘要翻译：一种具有过渡金属氮化物屏障（106）与铜金属 - 氮化硅帽（108）的铜互连。在该结构上形成过渡金属氮化物屏障（106）。然后，阻挡层（106）在含Si环境中退火，以在阻挡层（106）的表面形成富含硅的覆盖层（108）。然后，铜（110）以良好的粘合力沉积在富含硅的覆盖层（108）上。

4. 发明授权

US6037013A Barrier/liner with a SiNx-enriched surface layer on MOCVD prepared films 失效
标题翻译：在MOCVD制备的膜上具有SiN x富集表面层的阻挡层/衬垫
公开(公告)号：US6037013A
公开(公告)日：2000-03-14
申请号：US34269
申请日：1998-03-04
申请人： Wei-Yung Hsu , Qi-Zhong Hong , Jiong-Ping Lu
发明人： Wei-Yung Hsu , Qi-Zhong Hong , Jiong-Ping Lu
IPC分类号： H01L21/285 , H01L21/318 , B05D3/06 , C23C16/30
CPC分类号： H01L21/3185 , H01L21/28568
摘要： A barrier/liner structure (10) and method. First, a porous nitride layer (12) is formed over a structure (18), for example, by metal-organic CVD (MOCVD). Then, the porous nitride layer (12) is exposed to a silicon- (or dopant-) containing ambient to obtain a silicon-(or dopant) rich surface layer (14). Finally, the silicon- (or dopant) rich surface layer (14) is nitrided to obtain a silicon-nitride (or dopant-nitride) enriched surface layer (16).
摘要翻译：屏障/衬垫结构（10）和方法。首先，例如通过金属 - 有机CVD（MOCVD）在结构（18）上形成多孔氮化物层（12）。然后，多孔氮化物层（12）暴露于含硅（或掺杂剂）的环境中以获得富含硅（或掺杂剂）的表面层（14）。最后，将富含硅（或掺杂剂）的表面层（14）进行氮化，以获得富含氮化物（或氮化物）的表面层（16）。

5. 发明授权

US6077782A Method to improve the texture of aluminum metallization 失效
标题翻译：改善铝金属化质地的方法
公开(公告)号：US6077782A
公开(公告)日：2000-06-20
申请号：US23424
申请日：1998-02-13
申请人： Wei-Yung Hsu , Qi-Zhong Hong , Robert H. Havemann
发明人： Wei-Yung Hsu , Qi-Zhong Hong , Robert H. Havemann
IPC分类号： H01L21/768 , H01L23/532 , H01L21/44
CPC分类号： H01L21/76814 , H01L21/76843 , H01L21/76862 , H01L21/76882 , H01L23/53223 , H01L2924/0002
摘要： A method to improve the texture of titanium and aluminum to reduce electromigration by controlling the deposition conditions and the texture of the substrates. Aluminum films can develop strong texture, when titanium is used underneath aluminum. However, to prevent the interaction between aluminum and titanium, a layer of TiN or other barrier is necessary. Fortunately, TiN has a similar atom arrangement on the plane as that of aluminum and titanium . Therefore, by controlling the orientation of titanium using a pre-sputter argon etch and low titanium deposition temperature, the texture of titanium can be transferred to TiN, and subsequently to aluminum.
摘要翻译：通过控制沉积条件和基板的质地，改善钛和铝的织构以减少电迁移的方法。当铝在铝下使用时，铝膜可以发展出强烈的<111>质感。然而，为了防止铝和钛之间的相互作用，需要一层TiN或其它屏障。幸运的是，TiN在<111>平面上具有与铝<111>和钛<002>相似的原子排列。因此，通过使用预溅射氩蚀刻和低钛沉积温度控制钛的取向，钛的织构可以转移到TiN，然后转移到铝。

6. 发明授权

US06903000B2 System for improving thermal stability of copper damascene structure 有权
标题翻译：提高铜镶嵌结构热稳定性的系统
公开(公告)号：US06903000B2
公开(公告)日：2005-06-07
申请号：US10114778
申请日：2002-04-03
申请人： Jiong-Ping Lu , Qi-Zhong Hong , Tz-Cheng Chiu , Changming Jin , David Permana , Ting Tsui
发明人： Jiong-Ping Lu , Qi-Zhong Hong , Tz-Cheng Chiu , Changming Jin , David Permana , Ting Tsui
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/76877 , H01L21/76883
摘要： Disclosed is a system for fabricating a semiconductor device (100). An interconnect structure (110) is formed on the semiconductor device (100) and a cap (112) is deposited over the interconnect structure (110). The interconnect structure (110) is annealed with the overlying cap (112) in place. The cap (112) is then removed after the interconnect structure (110) is annealed.
摘要翻译：公开了一种用于制造半导体器件（100）的系统。互连结构（110）形成在半导体器件（100）上，并且帽（112）沉积在互连结构（110）上。互连结构（110）与上覆盖（112）退火就位。然后在互连结构（110）退火之后去除盖（112）。

7. 发明申请

US20050186788A1 System for improving thermal stability of copper damascene structure 审中-公开
公开(公告)号：US20050186788A1
公开(公告)日：2005-08-25
申请号：US11090103
申请日：2005-03-24
申请人： Jiong-Ping Lu , Qi-Zhong Hong , Tz-Cheng Chiu , Changming Jin , David Permana , Ting Tsui
发明人： Jiong-Ping Lu , Qi-Zhong Hong , Tz-Cheng Chiu , Changming Jin , David Permana , Ting Tsui
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76834 , H01L21/76877 , H01L21/76883
摘要： Disclosed is a system for fabricating a semiconductor device (100). An interconnect structure (110) is formed on the semiconductor device (100) and a cap (112) is deposited over the interconnect structure (110). The interconnect structure (110) is annealed with the overlying cap (112) in place. The cap (112) is then removed after the interconnect structure (110) is annealed.

8. 发明授权

US06544886B2 Process for isolating an exposed conducting surface 有权
公开(公告)号：US06544886B2
公开(公告)日：2003-04-08
申请号：US09574731
申请日：2000-05-18
申请人： Jiong-Ping Lu , Qi-Zhong Hong , Duane E. Carter , Yung Liu
发明人： Jiong-Ping Lu , Qi-Zhong Hong , Duane E. Carter , Yung Liu
IPC分类号： H01L214763
CPC分类号： H01L21/02244 , H01L21/02178 , H01L21/02252 , H01L21/02255 , H01L21/28562 , H01L21/31683 , H01L21/76831 , H01L21/76834 , H01L21/76888
摘要： A method of isolating an exposed conductive surface. An aluminum layer (130) is selectively formed over the exposed conductive (106) surface (e.g., Cu) but not over the surrounding dielectric (110) surface using a thermal CVD process. The aluminum layer (130) is then oxidized to form a thin isolating aluminum-oxide (108) over only the conductive surface. The isolating aluminum-oxide provides a barrier for the Cu while taking up minimal space and reducing the effective dielectric constant.

9. 发明授权

US06355559B1 Passivation of inlaid metallization 有权
标题翻译：嵌入金属化钝化
公开(公告)号：US06355559B1
公开(公告)日：2002-03-12
申请号：US09706275
申请日：2000-11-03
申请人： Robert H. Havemann , Qi-Zhong Hong , Girish Dixit
发明人： Robert H. Havemann , Qi-Zhong Hong , Girish Dixit
IPC分类号： H01L214763
CPC分类号： H01L21/76849 , H01L21/76852 , H01L21/76856 , H01L21/76858 , H01L21/76886
摘要： A method for forming a metal interconnect having a self-aligned transition metal-nitride barrier (124). After the metal interconnect lines (118) are formed, a transition metal (120) is deposited over the surface of the metal interconnect lines (118) and reacted in to form a metal-compound (122). The metal-compound (122) is then annealed in a nitrogen ambient to form a barrier layer (114) at the surface of the metal interconnect lines (118).
摘要翻译：一种用于形成具有自对准过渡金属氮化物屏障（124）的金属互连的方法。在金属互连线（118）形成之后，过渡金属（120）沉积在金属互连线（118）的表面上并反应以形成金属化合物（122）。金属化合物（122）然后在氮气环境中退火以在金属互连线（118）的表面形成阻挡层（114）。

10. 发明授权

US06358849B1 Integrated circuit interconnect and method 有权
标题翻译：集成电路互连和方法
公开(公告)号：US06358849B1
公开(公告)日：2002-03-19
申请号：US09467680
申请日：1999-12-21
申请人： Robert H. Havemann , Girish A. Dixit , Manoj Jain , Eden Zielinski , Qi-Zhong Hong , Jeffrey West
发明人： Robert H. Havemann , Girish A. Dixit , Manoj Jain , Eden Zielinski , Qi-Zhong Hong , Jeffrey West
IPC分类号： H01L21302
CPC分类号： H01L21/76808 , H01L21/31053 , H01L21/76224 , H01L21/76849 , H01L21/76856 , H01L21/76867
摘要： A dual inlaid interconnect fabrication method using a temporary filler in a via during trench etch and removal of the filler after trench etch. This provides via bottom protection during trench etch.
摘要翻译：一种双嵌入互连制造方法，在沟槽蚀刻中沟槽蚀刻和去除填充物之后，在通孔中使用临时填料。这在沟槽蚀刻期间通过底部保护提供。

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