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1. 发明授权

US06500762B2 Method of depositing a copper seed layer which promotes improved feature surface coverage 有权
标题翻译：沉积铜种子层的方法，其促进改进的特征表面覆盖
公开(公告)号：US06500762B2
公开(公告)日：2002-12-31
申请号：US10056751
申请日：2002-01-24
申请人： Imran Hashim , Hong-Mei Zhang , John C. Forster
发明人： Imran Hashim , Hong-Mei Zhang , John C. Forster
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/2855 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： We have discovered a method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. We have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at the bottom of a high aspect ratio contact via and on the walls of the via by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. An increase in the percentage of copper species which are ionized can be achieved using techniques known in the art, including but not limited to applicants' preferred technique, an inductively coupled RF ion metal plasma.
摘要翻译：我们已经发现了一种改进沉积在半导体特征表面上的铜籽晶层的台阶覆盖率的方法，该方法对于具有高纵横比的小尺寸特征特别有用。我们已经证明，可以通过增加作为离子的沉积铜物质的百分比，在高纵横比接触通孔和通孔的壁上同时增加铜种子层覆盖。获得铜种子层足够的阶梯覆盖所必需的物质电离的百分比是该特征的纵横比的函数。可以使用本领域已知的技术来实现电离的铜物质的百分比的增加，包括但不限于申请人的优选技术，电感耦合RF离子金属等离子体。

2. 发明授权

US06391776B1 Method of depositing a copper seed layer which promotes improved feature surface coverage 失效
标题翻译：沉积铜种子层的方法，其促进改进的特征表面覆盖
公开(公告)号：US06391776B1
公开(公告)日：2002-05-21
申请号：US09754894
申请日：2001-01-05
申请人： Imran Hashim , Hong-Mei Zhang , John C. Forster
发明人： Imran Hashim , Hong-Mei Zhang , John C. Forster
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/2855 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of improving step coverage of a copper seed layer deposited over a semiconductor feature surface which is particularly useful for small size features having a high aspect ratio. Using a contact via as an example of a high aspect ratio feature, we have demonstrated that it is possible to increase the copper seed layer coverage simultaneously at both the bottom of the via and on the wall of the via . This increase is achieved by increasing the percentage of the depositing copper species which are ions. The percentage of species ionization which is necessary to obtain sufficient step coverage for the copper seed layer is a function of the aspect ratio of the feature. For features having a 0.25 &mgr;m or smaller feature size, an aspect ratio of about 3:1 requires that about 50% or more of the copper species be ions at the time of deposition on the substrate.
摘要翻译：一种改善沉积在半导体特征表面上的铜籽晶层的台阶覆盖率的方法，其特别适用于具有高纵横比的小尺寸特征。使用接触通孔作为高宽比特征的实例，我们已经证明可以在通孔的底部和通孔的壁上同时增加铜种子层覆盖度。这种增加是通过增加沉积作为离子的铜物质的百分比来实现的。获得铜种子层足够的阶梯覆盖所必需的物质电离的百分比是该特征的纵横比的函数。对于具有0.25μm或更小特征尺寸的特征，约3:1的纵横比要求在衬底上沉积时约50％或更多的铜物质是离子。

3. 发明授权

US08878152B2 Nonvolatile resistive memory element with an integrated oxygen isolation structure 有权
标题翻译：具有集成氧隔离结构的非易失性电阻式存储元件
公开(公告)号：US08878152B2
公开(公告)日：2014-11-04
申请号：US13408103
申请日：2012-02-29
申请人： Yun Wang , Tony P. Chiang , Imran Hashim , Dipankar Pramanik
发明人： Yun Wang , Tony P. Chiang , Imran Hashim , Dipankar Pramanik
IPC分类号： H01L29/02
CPC分类号： H01L45/16 , H01L27/2463 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.
摘要翻译：非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。一个这样的氧隔离结构包括氧阻隔层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。

4. 发明授权

US08821795B2 Combinatorial screening method and apparatus 有权
标题翻译：组合筛选方法和装置
公开(公告)号：US08821795B2
公开(公告)日：2014-09-02
申请号：US12504232
申请日：2009-07-16
申请人： Imran Hashim , Sandra Malhotra , Ryan Clarke , Sunil Shanker , Yun Wang , Yoram Schwarz
发明人： Imran Hashim , Sandra Malhotra , Ryan Clarke , Sunil Shanker , Yun Wang , Yoram Schwarz
IPC分类号： G01N27/00 , H01L45/00 , H01L21/66
CPC分类号： H01L22/20 , H01L22/14 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A combinatorial screening method and system are provided. The combinatorial system and method provide rapid data generation for characterization of phase change material. The characterization data is collected through a multipoint probe card where multiple regions are characterized in a single annealing cycle.
摘要翻译：提供组合筛选方法和系统。组合系统和方法提供用于表征相变材料的快速数据生成。通过多点探针卡收集表征数据，其中多个区域在单个退火循环中表征。

5. 发明授权

US08681530B2 Nonvolatile memory device having a current limiting element 有权
标题翻译：具有限流元件的非易失性存储器件
公开(公告)号：US08681530B2
公开(公告)日：2014-03-25
申请号：US13353000
申请日：2012-01-18
申请人： Yun Wang , Imran Hashim , Tony Chiang
发明人： Yun Wang , Imran Hashim , Tony Chiang
IPC分类号： G11C11/00 , H01L29/02
CPC分类号： H01L45/1253 , G11C13/0007 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括至少一层电阻材料，其被配置为提高所形成的电阻式开关存储元件的开关性能和寿命。所形成的限流层或电阻层的电性能被配置为在逻辑状态编程步骤（即“设定”和“复位”步骤）期间通过添加固定的串联电阻来降低通过可变电阻层的电流在形成在非易失性存储器件中的电阻式开关存储元件中。

6. 发明申请

US20140078808A1 Embedded Nonvolatile Memory Elements Having Resistive Switching Characteristics 有权
标题翻译：具有电阻开关特性的嵌入式非易失性存储器元件
公开(公告)号：US20140078808A1
公开(公告)日：2014-03-20
申请号：US13621371
申请日：2012-09-17
申请人： Imran Hashim , Tony Chiang , Vidyut Gopal , Yun Wang
发明人： Imran Hashim , Tony Chiang , Vidyut Gopal , Yun Wang
IPC分类号： H01L27/24 , G11C11/21
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/74 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/146
摘要： Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line.
摘要翻译：提供了各自包括电阻式开关层和电流控制元件的非易失性存储器组件。转向元件可以是与开关层串联连接的晶体管。由转向元件提供的电阻控制允许使用需要低开关电压和电流的开关层。包括这种开关层的存储器组件比例如需要高得多的开关电压的闪速存储器更容易嵌入到具有其它低电压组件（例如逻辑和数字信号处理组件）的集成电路芯片中。在一些实施例中，所提供的非易失性存储器组件在小于约3.0V的开关电压和小于50微安的相应电流下工作。存储元件可以包括设置在氮化钛电极和掺杂多晶硅电极之间的富含金属的氧化铪。一个电极可以连接到晶体管的漏极或源极，而另一个电极连接到信号线。

7. 发明申请

US20130228735A1 INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIVE MEMORY ELEMENT 有权
标题翻译：在非易失性存储元件中用作切换层的界面氧化物
公开(公告)号：US20130228735A1
公开(公告)日：2013-09-05
申请号：US13409436
申请日：2012-03-01
申请人： Randall Higuchi , Tony P. Chiang , Ryan Clarke , Vidyut Gopal , Imran Hashim , Robert Huertas , Yun Wang
发明人： Randall Higuchi , Tony P. Chiang , Ryan Clarke , Vidyut Gopal , Imran Hashim , Robert Huertas , Yun Wang
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/10 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1633
摘要： A nonvolatile resistive memory element includes a host oxide formed from an interfacial oxide layer. The interfacial oxide layer is formed on the surface of a deposited electrode layer via in situ or post-deposition surface oxidation treatments. The switching performance of a resistive memory device based on such an interfacial oxide layer is equivalent or superior to the performance of a conventional resistive memory element.
摘要翻译：非易失性电阻性存储元件包括由界面氧化物层形成的主体氧化物。界面氧化物层通过原位或沉积后表面氧化处理形成在沉积电极层的表面上。基于这样的界面氧化物层的电阻式存储器件的开关性能等同于或优于常规电阻式存储元件的性能。

8. 发明申请

US20130214232A1 NONVOLATILE MEMORY DEVICE USING A VARISTOR AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用VARISTOR作为当前限制元素的非易失性存储器件
公开(公告)号：US20130214232A1
公开(公告)日：2013-08-22
申请号：US13399815
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

9. 发明申请

US20130187110A1 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用隧道氧化物作为电流限制元件的非易失性存储器件
公开(公告)号：US20130187110A1
公开(公告)日：2013-07-25
申请号：US13354006
申请日：2012-01-19
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00 , H01L21/02 , B82Y99/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

10. 发明申请

US20130107604A1 Method for Forming Resistive Switching Memory Elements with Improved Switching Behavior 有权
标题翻译：用于形成具有改进的开关行为的电阻式开关存储元件的方法
公开(公告)号：US20130107604A1
公开(公告)日：2013-05-02
申请号：US13281777
申请日：2011-10-26
申请人： Yun Wang , Tony Chiang , Imran Hashim , Vidyut Gopal
发明人： Yun Wang , Tony Chiang , Imran Hashim , Vidyut Gopal
IPC分类号： G11C11/00 , G01N27/00 , H01L21/8239
CPC分类号： H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： Methods for producing RRAM resistive switching elements having optimal switching behavior include crystalline phase structural changes. Structural changes indicative of optimal switching behavior include hafnium oxide phases in an interfacial region between a resistive switching layer and an electrode.
摘要翻译：具有最佳切换行为的RRAM电阻式开关元件的制造方法包括晶相结构变化。指示最佳切换行为的结构变化包括在电阻式开关层和电极之间的界面区域中的氧化铪相。

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