专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07398676B2 Leak sensor and leak sensing system 有权
标题翻译：泄漏传感器和泄漏检测系统
公开(公告)号：US07398676B2
公开(公告)日：2008-07-15
申请号：US11382747
申请日：2006-05-11
申请人： Pyoung-Ho Lim , Jong-Kook Song , Sung-Ho Jo , Ki-Hwan Park , Tae-Gun Kim , Woo-Koen Kim
发明人： Pyoung-Ho Lim , Jong-Kook Song , Sung-Ho Jo , Ki-Hwan Park , Tae-Gun Kim , Woo-Koen Kim
IPC分类号： G01M3/04
CPC分类号： G01M3/16 , G01M3/18 , G01M3/183
摘要： A leak sensor and a leak sensing system are provided. The leak sensor preferably includes a fluid sensing member that is capable of sensing and indicating the presence of a fluid leaked from a fluid storage or transport member. The leak sensor further preferably includes at least two wires communicating with the fluid sensing member. The wires are preferably configured to be short-circuited when they contact the fluid leaked from the fluid storage or transport member. An electrical signal corresponding to a leak sensor location can thereby be sent to a control terminal of the leak sensing system. A portion of the wires may be arranged in a cable coated with a protective material such as Teflon®. The control box (or terminal) preferably receives electrical signals from a plurality of leak sensors. The electrical signals can provide information on whether the fluid has leaked and on which leak sensor or sensors have detected the fluid leak.
摘要翻译：提供了一种泄漏传感器和泄漏检测系统。泄漏传感器优选地包括流体感测构件，其能够感测并指示从流体存储或运输构件泄漏的流体的存在。泄漏传感器还优选地包括与流体感测构件连通的至少两根线。电线优选构造成当它们接触从流体存储或运输构件泄漏的流体时短路。因此，可以将与泄漏传感器位置对应的电信号发送到泄漏检测系统的控制端子。电线的一部分可以布置在涂有保护材料如Teflon的电缆中。控制箱（或端子）优选地从多个泄漏传感器接收电信号。电信号可以提供关于流体是否泄漏的信息，并且在哪个泄漏传感器或传感器检测到流体泄漏。

2. 发明授权

US07931035B2 Method of and apparatus for cleaning semiconductor wafers 失效
标题翻译：半导体晶圆清洗方法及设备
公开(公告)号：US07931035B2
公开(公告)日：2011-04-26
申请号：US10695770
申请日：2003-10-30
申请人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
发明人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/048 , B08B3/102 , H01L21/67028 , Y10S134/902
摘要： A method of and system for cleaning semiconductor wafers minimizes the exposure of the wafers to the air by washing, rinsing and drying the wafers in one cleaning chamber. The system includes a wafer support by which a plurality of wafers can be supported in the cleaning chamber as oriented vertically and spaced from each other, and tubular de-ionized water supply nozzles extending longitudinally in the direction in which the wafers are spaced from each other as disposed to the sides of the wafers. Each de-ionized water supply nozzle has an inner nozzle passageway, and a plurality of sets of nozzle holes extending radially through the main body of the nozzle from the inner nozzle passageway. Each such set of nozzle holes subtends an angle of 80˜100° in a vertical plane and is directed towards a surface of a respective wafer W. During a primary rinse procedure, the de-ionized water is supplied to the de-ionized water spray nozzles, and the liquid in the cleaning chamber is simultaneously discharged from a lower part of the chamber and by being allowed to overflow the chamber. The supplying of the de-ionized water to the de-ionized water spray nozzles and the discharging of the cleaning chamber are carried out in proportions that minimize differences in the etching rate of a wafer across the surface thereof.
摘要翻译：用于清洁半导体晶片的方法和系统通过在一个清洁室中洗涤，漂洗和干燥晶片来最小化晶片对空气的暴露。该系统包括晶片支撑件，通过该晶片支撑件，多个晶片可以被支撑在清洁室中，其垂直方向和彼此间隔开，并且在晶片间隔开的方向上纵向延伸的管状去离子水供应喷嘴设置在晶片的侧面。每个去离子水供应喷嘴具有内部喷嘴通道，以及从喷嘴通道径向延伸穿过喷嘴主体的多组喷嘴孔。每个这样的一组喷嘴孔在垂直平面中对着80〜100°的角度并且指向相应晶片W的表面。在初次漂洗过程中，将去离子水供应到去离子水喷雾喷嘴，并且清洁室中的液体同时从腔室的下部排出并且被允许使腔室溢出。将去离子水供应到去离子水喷嘴和排出清洁室的比例以使晶片在其表面上的蚀刻速率的差异最小化的比例进行。

3. 发明申请

US20110168211A1 SEMICONDUCTOR WAFER CLEANING SYSTEM AND METHOD 审中-公开
标题翻译：半导体清洗系统及方法
公开(公告)号：US20110168211A1
公开(公告)日：2011-07-14
申请号：US13052173
申请日：2011-03-21
申请人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
发明人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/048 , B08B3/102 , H01L21/67028 , Y10S134/902
摘要： A method of and system for cleaning semiconductor wafers minimizes the exposure of the wafers to the air by washing, rinsing and drying the wafers in one cleaning chamber. The system includes a wafer support by which a plurality of wafers can be supported in the cleaning chamber as oriented vertically and spaced from each other, and tubular de-ionized water supply nozzles extending longitudinally in the direction in which the wafers are spaced from each other as disposed to the sides of the wafers. Each de-ionized water supply nozzle has an inner nozzle passageway, and a plurality of sets of nozzle holes extending radially through the main body of the nozzle from the inner nozzle passageway. Each such set of nozzle holes subtends an angle of 80˜100° in a vertical plane and is directed towards a surface of a respective wafer W. During a primary rinse procedure, the de-ionized water is supplied to the de-ionized water spray nozzles, and the liquid in the cleaning chamber is simultaneously discharged from a lower part of the chamber and by being allowed to overflow the chamber. The supplying of the de-ionized water to the de-ionized water spray nozzles and the discharging of the cleaning chamber are carried out in proportions that minimize differences in the etching rate of a wafer across the surface thereof.
摘要翻译：用于清洁半导体晶片的方法和系统通过在一个清洁室中洗涤，漂洗和干燥晶片来最小化晶片对空气的暴露。该系统包括晶片支撑件，通过该晶片支撑件可将多个晶片支撑在清洁室中，其方式为垂直定向并彼此间隔开，并且管状去离子水供应喷嘴在晶片彼此间隔开的方向上纵向延伸设置在晶片的侧面。每个去离子水供应喷嘴具有内部喷嘴通道，以及从喷嘴通道径向延伸穿过喷嘴主体的多组喷嘴孔。每个这样的一组喷嘴孔在垂直平面中对着80〜100°的角度并且指向相应晶片W的表面。在初次漂洗过程中，将去离子水供应到去离子水喷雾喷嘴，并且清洁室中的液体同时从腔室的下部排出并且被允许使腔室溢出。将去离子水供应到去离子水喷嘴和排出清洁室的比例以使晶片在其表面上的蚀刻速率的差异最小化的比例进行。

4. 发明授权

US07018093B2 Apparatus and method for sensing defects in temperature sensors 失效
公开(公告)号：US07018093B2
公开(公告)日：2006-03-28
申请号：US10191482
申请日：2002-07-10
申请人： Ki-Hwan Park , Jong-Sub Hwang , Jeong-Hwan Kim
发明人： Ki-Hwan Park , Jong-Sub Hwang , Jeong-Hwan Kim
IPC分类号： G01K15/00
CPC分类号： G01K15/00
摘要： In a temperature controlling apparatus for controlling temperature by using a temperature sensor, a defect state of the temperature sensor is sensed by sensing a change of specific resistance of the temperature sensor. A temperature value of the temperature sensor is detected at each unit time during exchanging of a chemical solution or stopping of a process in a chamber of the semiconductor fabricating process. A lowest temperature among the detected temperature values and a reference temperature predetermined to sense the change of the specific resistance of the temperature sensor, are compared with each other. When the lowest temperature deviates from the reference temperature, a defect of the temperature sensor is confirmed and a message indicative of a defect state and an alarm are generated.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式