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1. 发明申请

US20110168211A1 SEMICONDUCTOR WAFER CLEANING SYSTEM AND METHOD 审中-公开
标题翻译：半导体清洗系统及方法
公开(公告)号：US20110168211A1
公开(公告)日：2011-07-14
申请号：US13052173
申请日：2011-03-21
申请人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
发明人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/048 , B08B3/102 , H01L21/67028 , Y10S134/902
摘要： A method of and system for cleaning semiconductor wafers minimizes the exposure of the wafers to the air by washing, rinsing and drying the wafers in one cleaning chamber. The system includes a wafer support by which a plurality of wafers can be supported in the cleaning chamber as oriented vertically and spaced from each other, and tubular de-ionized water supply nozzles extending longitudinally in the direction in which the wafers are spaced from each other as disposed to the sides of the wafers. Each de-ionized water supply nozzle has an inner nozzle passageway, and a plurality of sets of nozzle holes extending radially through the main body of the nozzle from the inner nozzle passageway. Each such set of nozzle holes subtends an angle of 80˜100° in a vertical plane and is directed towards a surface of a respective wafer W. During a primary rinse procedure, the de-ionized water is supplied to the de-ionized water spray nozzles, and the liquid in the cleaning chamber is simultaneously discharged from a lower part of the chamber and by being allowed to overflow the chamber. The supplying of the de-ionized water to the de-ionized water spray nozzles and the discharging of the cleaning chamber are carried out in proportions that minimize differences in the etching rate of a wafer across the surface thereof.
摘要翻译：用于清洁半导体晶片的方法和系统通过在一个清洁室中洗涤，漂洗和干燥晶片来最小化晶片对空气的暴露。该系统包括晶片支撑件，通过该晶片支撑件可将多个晶片支撑在清洁室中，其方式为垂直定向并彼此间隔开，并且管状去离子水供应喷嘴在晶片彼此间隔开的方向上纵向延伸设置在晶片的侧面。每个去离子水供应喷嘴具有内部喷嘴通道，以及从喷嘴通道径向延伸穿过喷嘴主体的多组喷嘴孔。每个这样的一组喷嘴孔在垂直平面中对着80〜100°的角度并且指向相应晶片W的表面。在初次漂洗过程中，将去离子水供应到去离子水喷雾喷嘴，并且清洁室中的液体同时从腔室的下部排出并且被允许使腔室溢出。将去离子水供应到去离子水喷嘴和排出清洁室的比例以使晶片在其表面上的蚀刻速率的差异最小化的比例进行。

2. 发明授权

US07931035B2 Method of and apparatus for cleaning semiconductor wafers 失效
标题翻译：半导体晶圆清洗方法及设备
公开(公告)号：US07931035B2
公开(公告)日：2011-04-26
申请号：US10695770
申请日：2003-10-30
申请人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
发明人： Ki-Hwan Park , Tae-Joon Kim , Young-Choul Kook
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/048 , B08B3/102 , H01L21/67028 , Y10S134/902
摘要： A method of and system for cleaning semiconductor wafers minimizes the exposure of the wafers to the air by washing, rinsing and drying the wafers in one cleaning chamber. The system includes a wafer support by which a plurality of wafers can be supported in the cleaning chamber as oriented vertically and spaced from each other, and tubular de-ionized water supply nozzles extending longitudinally in the direction in which the wafers are spaced from each other as disposed to the sides of the wafers. Each de-ionized water supply nozzle has an inner nozzle passageway, and a plurality of sets of nozzle holes extending radially through the main body of the nozzle from the inner nozzle passageway. Each such set of nozzle holes subtends an angle of 80˜100° in a vertical plane and is directed towards a surface of a respective wafer W. During a primary rinse procedure, the de-ionized water is supplied to the de-ionized water spray nozzles, and the liquid in the cleaning chamber is simultaneously discharged from a lower part of the chamber and by being allowed to overflow the chamber. The supplying of the de-ionized water to the de-ionized water spray nozzles and the discharging of the cleaning chamber are carried out in proportions that minimize differences in the etching rate of a wafer across the surface thereof.
摘要翻译：用于清洁半导体晶片的方法和系统通过在一个清洁室中洗涤，漂洗和干燥晶片来最小化晶片对空气的暴露。该系统包括晶片支撑件，通过该晶片支撑件，多个晶片可以被支撑在清洁室中，其垂直方向和彼此间隔开，并且在晶片间隔开的方向上纵向延伸的管状去离子水供应喷嘴设置在晶片的侧面。每个去离子水供应喷嘴具有内部喷嘴通道，以及从喷嘴通道径向延伸穿过喷嘴主体的多组喷嘴孔。每个这样的一组喷嘴孔在垂直平面中对着80〜100°的角度并且指向相应晶片W的表面。在初次漂洗过程中，将去离子水供应到去离子水喷雾喷嘴，并且清洁室中的液体同时从腔室的下部排出并且被允许使腔室溢出。将去离子水供应到去离子水喷嘴和排出清洁室的比例以使晶片在其表面上的蚀刻速率的差异最小化的比例进行。

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