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    • 1. 发明授权
    • Active device array substrate and method for fabricating the same
    • 有源器件阵列衬底及其制造方法
    • US08399891B2
    • 2013-03-19
    • US12943933
    • 2010-11-11
    • Po-Lin LaiYing-Fa HuangChun-Ming YangWen-Bin WuWen-Yi Lin
    • Po-Lin LaiYing-Fa HuangChun-Ming YangWen-Bin WuWen-Yi Lin
    • H01L29/72
    • H01L22/20H01L22/14
    • An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.
    • 提供一种有源器件阵列衬底及其制造方法。 在衬底上形成包括分离的扫描线图案的第一图案化导电层。 每个扫描线图案包括彼此相邻的第一和第二扫描线。 第一和第二扫描线都具有第一和第二触点。 执行对扫描线图案的公开检查。 沟道层形成在衬底上。 包括与第一和第二扫描线隔开的数据线,位于沟道层上方的源极和漏极以及连接器的第二图案化导电层形成在衬底上。 电源相应地电连接数据线。 至少一个连接器电连接第一和第二扫描线,以便在每个扫描线图案中形成环。 形成与漏极电连接的像素电极。
    • 2. 发明申请
    • ACTIVE DEVICE ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME
    • 主动装置阵列基板及其制造方法
    • US20120043558A1
    • 2012-02-23
    • US12943933
    • 2010-11-11
    • Po-Lin LaiYing-Fa HuangChun-Ming YangWen-Bin WuWen-Yi Lin
    • Po-Lin LaiYing-Fa HuangChun-Ming YangWen-Bin WuWen-Yi Lin
    • H01L27/15H01L21/66
    • H01L22/20H01L22/14
    • An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.
    • 提供一种有源器件阵列衬底及其制造方法。 在衬底上形成包括分离的扫描线图案的第一图案化导电层。 每个扫描线图案包括彼此相邻的第一和第二扫描线。 第一和第二扫描线都具有第一和第二触点。 执行对扫描线图案的公开检查。 沟道层形成在衬底上。 包括与第一和第二扫描线隔开的数据线,位于沟道层上方的源极和漏极以及连接器的第二图案化导电层形成在衬底上。 电源相应地电连接数据线。 至少一个连接器电连接第一和第二扫描线,以便在每个扫描线图案中形成环。 形成与漏极电连接的像素电极。
    • 3. 发明申请
    • Showerhead
    • 淋浴头
    • US20090200400A1
    • 2009-08-13
    • US12029891
    • 2008-02-12
    • Wen-Yi Lin
    • Wen-Yi Lin
    • B05B1/14
    • B05B1/1618B05B1/18
    • A switchable showerhead has a body, a switching device, a water-spraying device and an operating device. The body has a mounting recess, a front through hole, a rear through hole, a mounting chamber, a connecting frame, an inserting hole and an inner tube. The switching device is mounted in the body and has a holding element, a front guide base, a rear guide base and a valve stem. The valve stem is movably mounted in the guide bases. The water-spraying device is mounted in the body, communicates with the switching device and has a shell and a cover. The shell is mounted in the mounting recess. The cover is mounted on the shell and has an inserting tube and multiple spouts. The operating device is mounted on the body, is connected to the switching device and has an operating panel connected to the valve stem.
    • 可切换的喷头具有主体,开关装置,喷水装置和操作装置。 主体具有安装凹部,前通孔,后通孔,安装室,连接框架,插入孔和内管。 开关装置安装在主体中,并且具有保持元件,前引导基座,后引导基座和阀杆。 阀杆可移动地安装在导向底座中。 喷水装置安装在本体中,与开关装置连通并具有外壳和盖。 外壳安装在安装凹槽中。 盖子安装在外壳上,并有一个插入管和多个喷口。 操作装置安装在主体上,连接到开关装置,并具有连接到阀杆的操作面板。
    • 5. 发明授权
    • Epitaxial thin films
    • 外延薄膜
    • US07033637B1
    • 2006-04-25
    • US09889237
    • 2000-01-12
    • Andrew Tye HuntGirish DeshpandeWen-Yi LinTzyy-Jiuan Jan
    • Andrew Tye HuntGirish DeshpandeWen-Yi LinTzyy-Jiuan Jan
    • B05D5/12
    • H01M8/124B01D53/228B01D67/0072B01D71/024B01D2256/12B01D2325/22B01D2325/26C23C16/453H01G4/1209H01G4/33H01M8/0687H01M8/1253Y02E60/525Y02P70/56Y10T29/49115Y10T29/5313Y10T29/53135Y10T29/532Y10T29/53204
    • Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
    • 公开了用作高温超导体的缓冲层的外延薄膜,固体氧化物燃料电池(SOFC)中的电解质,电子装置中的气体分离膜或电介质材料。 通过使用CCVD,CACVD或任何其它合适的沉积工艺,可以形成具有无孔,理想晶界和致密结构的外延膜。 公开了几种不同类型的材料用作高温超导体中的缓冲层。 此外,在SOFC中使用外延薄膜用于电解质和电极形成导致无孔和理想的增益边界/界面微结构的致密化。 还公开了用于生产氧气和氢气的气体分离膜。 这些半透膜由多孔陶瓷基板上的高质量,致密,气密,无针孔的微小尺度的混合导电氧化物层形成。 本文还介绍了作为电容器中的介电材料的外延薄膜。 根据电容值的物理结构和介电常数,使用电容器。 本发明的外延薄膜形成具有极高介电常数的低损耗介电层。 这种高介电常数允许形成可以通过在它们的电极之间施加直流偏压来调整其电容的电容器。