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    • 1. 发明授权
    • Method for forming an electronic device
    • 电子设备的形成方法
    • US08097400B2
    • 2012-01-17
    • US11062384
    • 2005-02-22
    • Warren JacksonCarl TaussigPing Mei
    • Warren JacksonCarl TaussigPing Mei
    • G03F7/20
    • G03F7/0002B82Y10/00B82Y40/00
    • Provided is a low cost system and method for forming electronic devices, especially large surface area devices. The process of imprint lithography is combined with alternate manufacturing techniques to fabricate the devices. Initially, a template imprints a three-dimensional pattern into a resist layer deposited on a flexible substrate. The resist layer is cured using ultraviolet light or other curing techniques. After curing, the 3-D pattern is modified using one of several techniques to include inkjetting, electrodeposition or laser patterning. In one embodiment, a semi-fluid material may be jetted into channels formed in the pattern, thereby forming conductive or insulating lead lines. Alternatively, a two-dimensional pattern may be jetted onto the resist layer. Final processing may include multiple etch-mask-etch steps. The integration of techniques into a single system provides a low cost, efficient method for manufacturing high quality, large surface area electronic devices.
    • 提供一种用于形成电子装置,特别是大型表面积装置的低成本系统和方法。 压印光刻的过程与替代制造技术相结合以制造器件。 最初,模板将三维图案印刷到沉积在柔性基板上的抗蚀剂层中。 使用紫外线或其他固化技术固化抗蚀剂层。 固化后,使用几种技术之一来修改3-D图案,以包括喷墨,电沉积或激光图案化。 在一个实施例中,可以将半流体材料喷射到在图案中形成的通道中,从而形成导电或绝缘导线。 或者,可以将二维图案喷射到抗蚀剂层上。 最终处理可以包括多个蚀刻掩模蚀刻步骤。 将技术整合到单个系统中提供了用于制造高质量,大表面积电子器件的低成本,有效的方法。
    • 2. 发明授权
    • Anti-counterfeiting system and method
    • 防伪系统和方法
    • US07533905B2
    • 2009-05-19
    • US11144203
    • 2005-06-02
    • Warren JacksonPing Mei
    • Warren JacksonPing Mei
    • B42D15/00
    • G07D7/02
    • Disclosed is an anti-counterfeiting system. In a particular embodiment, the anti-counterfeiting system has a first structure having a plurality of three-dimensional nanostructures, each having a height dimension less than a wavelength of visible light. In addition, there is a second structure having a second plurality of three-dimensional nanostructures, each having a height dimension less than a wavelength of visible light. The first and second structures are configured to couple together. An alignment mechanism is operable to align the first structure to the second structure and establish proximate contact between the first and second pluralities of nanostructures. With respect to the first and second structures, each encodes part of an authentication key. The authentication key includes pre-determined elements and interaction modalities. The resolution of the structures makes them copy-resistant. An associated method of use is also provided.
    • 披露了一种防伪系统。 在特定实施例中,防伪系统具有第一结构,其具有多个三维纳米结构,每个具有小于可见光波长的高度尺寸。 此外,存在具有第二多个三维纳米结构的第二结构,每个具有小于可见光波长的高度尺寸。 第一和第二结构被配置成耦合在一起。 对准机构可操作以将第一结构与第二结构对准并且在第一和第二多个纳米结构之间建立近似接触。 对于第一和第二结构,每个编码认证密钥的一部分。 验证密钥包括预定元素和交互模式。 结构的分辨率使其具有抗复制能力。 还提供了相关联的使用方法。
    • 6. 发明授权
    • Thin film device with minimized spatial variation of local mean height
    • 薄膜器件具有最小的局部平均高度的空间变化
    • US08765252B2
    • 2014-07-01
    • US11948867
    • 2007-11-30
    • Warren JacksonCarl P. TaussigPing MeiAlbert JeansHan-Jun Kim
    • Warren JacksonCarl P. TaussigPing MeiAlbert JeansHan-Jun Kim
    • B32B7/02B82Y10/00B82Y40/00G03F7/00
    • B82Y10/00B32B7/02B82Y40/00G03F7/0002Y10T428/24942
    • This invention provides a thin film device with minimized spatial variation of local mean height. More specifically, the thin film device has a substrate and at least one first structure having a first spatially varying weighted local mean height determined by a layer weighting function. The first structure has a first maximum height, a first minimum height and a first variation for a given averaging area. A compensation structure is also provided upon the substrate, the compensation structure having a second spatially varying weighted local mean height determined by the layer weighting function. The compensation structure also has a second maximum height, a second minimum height and a second variation for the given averaging area. The first structure and compensation structure combine to provide a combined structure upon the substrate with minimized spatial variation of a combined weighted local mean.
    • 本发明提供一种具有最小的局部平均高度的空间变化的薄膜装置。 更具体地,薄膜器件具有衬底和至少一个具有由层加权函数确定的具有第一空间变化的加权局部平均高度的第一结构。 第一结构具有给定平均区域的第一最大高度,第一最小高度和第一变化。 还在衬底上提供补偿结构,补偿结构具有由层加权函数确定的第二空间变化的加权局部平均高度。 补偿结构还具有给定平均区域的第二最大高度,第二最小高度和第二变化。 第一结构和补偿结构结合在一起,在基底上提供组合结构,使组合加权局部平均值具有最小的空间变化。
    • 7. 发明申请
    • Method for forming an electronic device
    • 电子设备的形成方法
    • US20060188823A1
    • 2006-08-24
    • US11062384
    • 2005-02-22
    • Warren JacksonCarl TaussigPing Mei
    • Warren JacksonCarl TaussigPing Mei
    • G03F7/00
    • G03F7/0002B82Y10/00B82Y40/00
    • Provided is a low cost system and method for forming electronic devices, especially large surface area devices. The process of imprint lithography is combined with alternate manufacturing techniques to fabricate the devices. Initially, a template imprints a three-dimensional pattern into a resist layer deposited on a flexible substrate. The resist layer is cured using ultraviolet light or other curing techniques. After curing, the 3-D pattern is modified using one of several techniques to include inkjetting, electrodeposition or laser patterning. In one embodiment, a semi-fluid material may be jetted into channels formed in the pattern, thereby forming conductive or insulating lead lines. Alternatively, a two-dimensional pattern may be jetted onto the resist layer. Final processing may include multiple etch-mask-etch steps. The integration of techniques into a single system provides a low cost, efficient method for manufacturing high quality, large surface area electronic devices.
    • 提供一种用于形成电子装置,特别是大型表面积装置的低成本系统和方法。 压印光刻的过程与替代制造技术相结合以制造器件。 最初,模板将三维图案印刷到沉积在柔性基板上的抗蚀剂层中。 使用紫外线或其他固化技术固化抗蚀剂层。 固化后,使用几种技术之一来修改3-D图案,以包括喷墨,电沉积或激光图案化。 在一个实施例中,可以将半流体材料喷射到在图案中形成的通道中,从而形成导电或绝缘引线。 或者,可以将二维图案喷射到抗蚀剂层上。 最终处理可以包括多个蚀刻掩模蚀刻步骤。 将技术整合到单个系统中提供了用于制造高质量,大表面积电子器件的低成本,有效的方法。