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1. 发明授权

US08307094B2 Method for processing register request, network element, and communication system 有权
标题翻译：处理注册请求，网元和通信系统的方法
公开(公告)号：US08307094B2
公开(公告)日：2012-11-06
申请号：US12452641
申请日：2007-07-20
申请人： Ping Huang , Zhikun Wan , Zhiyuan Hu , Xiaorong Jin
发明人： Ping Huang , Zhikun Wan , Zhiyuan Hu , Xiaorong Jin
IPC分类号： G06F15/16
CPC分类号： H04L65/1073 , H04L65/1016 , H04W8/26 , H04W60/04
摘要： The invention provides a method for processing register request, network element, and a communication system. The method for processing a register request of a terminal in a communication system that comprises a first network element (GSN) for providing IP networking service to said terminal, a second network element (P-CSCF) for providing SIP proxy service to said terminal, a third network element (S-CSCF) for providing SIP subscriber service to said terminal, and a fourth network element (HSS) for storing information about said terminal including said terminal's address; wherein the communication system further comprises a fifth network element (NAPT) for translating said terminal's address in between said first network element and said second network element; said method comprise: determining whether a message issued by said terminal for said register request has undergone Network Address Port Translation; indicating an address for address verification in said message based on the determination whether said message has undergone Network Address Port Translation; and verifying the address for address verification in said message against the information stored in said fourth network element.
摘要翻译：本发明提供了一种处理注册请求，网元和通信系统的方法。一种用于处理通信系统中的终端的注册请求的方法，该通信系统包括用于向所述终端提供IP联网服务的第一网元（GSN），用于向所述终端提供SIP代理服务的第二网元（P-CSCF）用于向所述终端提供SIP用户业务的第三网元（S-CSCF）和用于存储关于包括所述终端地址的所述终端的信息的第四网元（HSS）其中所述通信系统还包括用于在所述第一网络元件和所述第二网络元件之间转换所述终端的地址的第五网络元件（NAPT）所述方法包括：确定所述终端为所述注册请求发出的消息是否经历了网络地址端口转换; 基于所述消息是否已经经历了网络地址端口转换的确定，指示所述消息中的地址验证地址; 以及根据存储在所述第四网络元件中的信息来验证所述消息中的地址验证的地址。

2. 发明申请

US20100174819A1 METHOD FOR PROCESSING REGISTER REQUEST, NETWORK ELEMENT, AND COMMUNICATION SYSTEM 有权
标题翻译：处理注册请求，网络元素和通信系统的方法
公开(公告)号：US20100174819A1
公开(公告)日：2010-07-08
申请号：US12452641
申请日：2007-07-20
申请人： Ping Huang , Zhikun Wan , Zhiyuan Hu , Xiaorong Jin
发明人： Ping Huang , Zhikun Wan , Zhiyuan Hu , Xiaorong Jin
IPC分类号： G06F15/16
CPC分类号： H04L65/1073 , H04L65/1016 , H04W8/26 , H04W60/04
摘要： The invention provides a method for processing register request, network element, and a communication system. The method for processing a register request of a terminal in a communication system that comprises a first network element (GSN) for providing IP networking service to said terminal, a second network element (P-CSCF) for providing SIP proxy service to said terminal, a third network element (S-CSCF) for providing SIP subscriber service to said terminal, and a fourth network element (HSS) for storing information about said terminal including said terminal's address; wherein the communication system further comprises a fifth network element (NAPT) for translating said terminal's address in between said first network element and said second network element; said method comprise: determining whether a message issued by said terminal for said register request has undergone Network Address Port Translation; indicating an address for address verification in said message based on the determination whether said message has undergone Network Address Port Translation; and verifying the address for address verification in said message against the information stored in said fourth network element.
摘要翻译：本发明提供一种处理注册请求，网元和通信系统的方法。一种用于处理通信系统中的终端的注册请求的方法，该通信系统包括用于向所述终端提供IP联网服务的第一网元（GSN），用于向所述终端提供SIP代理服务的第二网元（P-CSCF）用于向所述终端提供SIP用户业务的第三网元（S-CSCF）和用于存储关于包括所述终端地址的所述终端的信息的第四网元（HSS）其中所述通信系统还包括用于在所述第一网络元件和所述第二网络元件之间转换所述终端的地址的第五网络元件（NAPT）所述方法包括：确定所述终端为所述注册请求发出的消息是否经历了网络地址端口转换; 基于所述消息是否已经经历了网络地址端口转换的确定，指示所述消息中的地址验证地址; 以及根据存储在所述第四网络元件中的信息来验证所述消息中的地址验证的地址。

3. 发明授权

US08639936B2 Methods and entities using IPSec ESP to support security functionality for UDP-based traffic 有权
标题翻译：使用IPSec ESP的方法和实体支持基于UDP流量的安全功能
公开(公告)号：US08639936B2
公开(公告)日：2014-01-28
申请号：US12736251
申请日：2008-03-25
申请人： Zhiyuan Hu , Zhikun Wan , Zhigang Luo , Ping Huang
发明人： Zhiyuan Hu , Zhikun Wan , Zhigang Luo , Ping Huang
IPC分类号： H04L29/06
CPC分类号： H04L63/061 , H04L9/0844 , H04L9/3271 , H04L63/164 , H04L2463/061 , H04W12/04 , H04W12/06
摘要： Methods in OMA SEC_CF for providing security services to traffic over UDP between a client and a server and the relevant entities are provided. A pre-shared key is pre-shared between the client and the server. A pair of IPSec ESP SAs between the client and the server is established without shared key negotiation, wherein traffic data cryptographic algorithms are determined. Traffic data security keys are derived from the pre-shared key via the determined traffic data cryptographic algorithms. Then, data of the traffic can be provided with security services with the traffic data security keys through use of IPSec ESP.
摘要翻译：提供了OMA SEC_CF中用于向客户端和服务器以及相关实体之间通过UDP提供安全服务的方法。预共享密钥在客户端和服务器之间预先共享。建立客户端与服务器之间的一对IPSec ESP SA，无需共享密钥协商，确定流量数据加密算法。业务数据安全密钥通过所确定的业务数据密码算法从预共享密钥导出。然后，可以通过使用IPSec ESP为业务数据提供具有业务数据安全密钥的安全服务。

4. 发明申请

US20110016314A1 METHODS AND ENTITIES USING IPSec ESP TO SUPPORT SECURITY FUNCTIONALITY FOR UDP-BASED OMA ENABLES 有权
标题翻译：使用IPSec ESP支持基于UDP的OMA使用的安全功能的方法和实现
公开(公告)号：US20110016314A1
公开(公告)日：2011-01-20
申请号：US12736251
申请日：2008-03-25
申请人： Zhiyuan Hu , Zhikun Wan , Zhigang Luo , Ping Huang
发明人： Zhiyuan Hu , Zhikun Wan , Zhigang Luo , Ping Huang
IPC分类号： H04L9/28 , H04L9/32
CPC分类号： H04L63/061 , H04L9/0844 , H04L9/3271 , H04L63/164 , H04L2463/061 , H04W12/04 , H04W12/06
摘要： Methods in OMA SEC_CF for providing security services to traffic over UDP between a client and a server and the relevant entities are provided. A pre-shared key is pre-shared between the client and the server. A pair of IPSec ESP SAs between the client and the server is established without shared key negotiation, wherein traffic data cryptographic algorithms are determined. Traffic data security keys are derived from the pre-shared key via the determined traffic data cryptographic algorithms. Then, data of the traffic can be provided with security services with the traffic data security keys through use of IPSec ESP.
摘要翻译：提供了OMA SEC_CF中用于向客户端和服务器以及相关实体之间通过UDP提供安全服务的方法。预共享密钥在客户端和服务器之间预先共享。建立客户端与服务器之间的一对IPSec ESP SA，无需共享密钥协商，确定流量数据加密算法。业务数据安全密钥通过所确定的业务数据密码算法从预共享密钥导出。然后，可以通过使用IPSec ESP为业务数据提供具有业务数据安全密钥的安全服务。

5. 发明授权

US09597769B2 Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer 有权
公开(公告)号：US09597769B2
公开(公告)日：2017-03-21
申请号：US13488149
申请日：2012-06-04
申请人： Paul Andre Lefevre , William C. Allison , James P. LaCasse , Diane Scott , Alexander William Simpson , Ping Huang , Leslie M. Charns
发明人： Paul Andre Lefevre , William C. Allison , James P. LaCasse , Diane Scott , Alexander William Simpson , Ping Huang , Leslie M. Charns
IPC分类号： B24B37/20 , B24B37/22 , B24B37/26 , B24B37/16 , B24D11/00 , B24D18/00
CPC分类号： B24B37/205 , B24B37/16 , B24B37/22 , B24B37/26 , B24D11/003 , B24D18/0009
摘要： Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

6. 发明申请

US20160155688A9 METHOD FOR PACKAGING A POWER DEVICE WITH BOTTOM SOURCE ELECTRODE 有权
公开(公告)号：US20160155688A9
公开(公告)日：2016-06-02
申请号：US14033140
申请日：2013-09-20
申请人： Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu , Lei Shi , Liang Zhao , Ping Huang
发明人： Yan Xun Xue , Yueh-Se Ho , Hamza Yilmaz , Jun Lu , Lei Shi , Liang Zhao , Ping Huang
IPC分类号： H01L23/495
CPC分类号： H01L23/49537 , H01L23/49541 , H01L23/49548 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L2224/16245 , H01L2924/13091 , H01L2924/00
摘要： A power semiconductor package has an ultra thin chip with front side molding to reduce substrate resistance; a lead frame unit with grooves located on both side leads provides precise positioning for connecting numerous bridge-shaped metal clips to the front side of the side leads. The bridge-shaped metal clips are provided with bridge structure and half or fully etched through holes for relieving superfluous solder during manufacturing process.

7. 发明申请

US20150021780A1 THIN POWER DEVICE AND PREPARATION METHOD THEREOF 有权
标题翻译：薄功率器件及其制备方法
公开(公告)号：US20150021780A1
公开(公告)日：2015-01-22
申请号：US13946949
申请日：2013-07-19
申请人： Yuping Gong , Yan Xun Xue , Ming-Chen Lu , Ping Huang , Jun Lu , Hamza Yilmaz
发明人： Yuping Gong , Yan Xun Xue , Ming-Chen Lu , Ping Huang , Jun Lu , Hamza Yilmaz
IPC分类号： H01L23/13 , H01L23/00
CPC分类号： H05K3/306 , H01L23/13 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L24/06 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/49 , H01L24/82 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/89 , H01L24/92 , H01L2224/04042 , H01L2224/0603 , H01L2224/24101 , H01L2224/24147 , H01L2224/29101 , H01L2224/32225 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/40245 , H01L2224/4103 , H01L2224/48227 , H01L2224/48465 , H01L2224/49111 , H01L2224/73267 , H01L2224/82101 , H01L2224/82102 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2224/92224 , H01L2924/00014 , H01L2924/0781 , H01L2924/13091 , H01L2924/15153 , H05K3/32 , H05K3/4697 , Y10T29/4913 , Y10T29/49139 , Y10T29/49165 , Y10T29/49169 , H01L2924/00 , H01L2924/00015 , H01L2924/014 , H01L2224/45099 , H01L2224/8384 , H01L2224/8485 , H01L2224/8385
摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.
摘要翻译：薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构，将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。

8. 发明申请

US20140242756A1 METHOD FOR PREPARING SEMICONDUCTOR DEVICES APPLIED IN FLIP CHIP TECHNOLOGY 有权
标题翻译：用于制备应用于芯片技术的半导体器件的方法
公开(公告)号：US20140242756A1
公开(公告)日：2014-08-28
申请号：US13775212
申请日：2013-02-24
申请人： Yan Xun Xue , Ping Huang , Hamza Yilmaz , Yueh-Se Ho , Lei Shi , Liang Zhao , Ping Li Wu , Lei Duan , Yuping Gong
发明人： Yan Xun Xue , Ping Huang , Hamza Yilmaz , Yueh-Se Ho , Lei Shi , Liang Zhao , Ping Li Wu , Lei Duan , Yuping Gong
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L24/11 , H01L24/13 , H01L24/73 , H01L2224/1184 , H01L2224/13101 , H01L2224/13111 , H01L2224/13147 , H01L2224/29 , H01L2224/2919 , H01L2224/73104 , H01L2224/83191 , H01L2924/10156 , H01L2924/10157 , H01L2924/13091 , H01L2924/18301 , H01L2924/00 , H01L2924/00014 , H01L2924/014
摘要： A method for preparing semiconductor devices in a flip chip process comprises forming deep grooves surrounding each of the semiconductor chips; depositing a first plastic package material to form a first plastic package layer covering front surface of the semiconductor wafer and filling the deep grooves; depositing a metal layer at back surface of the semiconductor wafer after grinding; grinding an outermost portion of the metal layer thus forming a ring area located at back surface around edge of the semiconductor wafer not covered by the metal layer; cutting the first plastic package layer, the semiconductor wafer, the metal layer and the first plastic package material filled in the deep grooves along a straight line formed by two ends of each of the deep grooves filled with the first plastic package material; and picking up the semiconductor devices and mounting on a substrate without flipping the semiconductor devices.
摘要翻译：一种用于在倒装芯片工艺中制备半导体器件的方法包括形成围绕每个半导体芯片的深槽; 沉积第一塑料封装材料以形成覆盖半导体晶片的前表面并填充深槽的第一塑料封装层; 在研磨后在半导体晶片的背面沉积金属层; 研磨金属层的最外部分，从而形成位于未被金属层覆盖的半导体晶片的边缘周围的背面的环形区域; 沿着由填充有第一塑料包装材料的每个深槽的两端形成的直线切割填充在深槽中的第一塑料封装层，半导体晶片，金属层和第一塑料封装材料; 并且拾取半导体器件并安装在衬底上，而不会翻转半导体器件。

9. 发明授权

US08772144B2 Vertical gallium nitride Schottky diode 有权
标题翻译：垂直氮化镓肖特基二极管
公开(公告)号：US08772144B2
公开(公告)日：2014-07-08
申请号：US13294903
申请日：2011-11-11
申请人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
发明人： TingGang Zhu , Anup Bhalla , Ping Huang , Yueh-se Ho
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L29/872 , H01L21/0217 , H01L21/0254 , H01L21/28581 , H01L21/30612 , H01L21/31111 , H01L21/56 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L25/18 , H01L27/0248 , H01L27/0814 , H01L29/0619 , H01L29/0688 , H01L29/2003 , H01L29/402 , H01L29/405 , H01L29/417 , H01L29/66136 , H01L29/66143 , H01L29/66212 , H01L29/861 , H01L29/8611 , H01L2224/0401 , H01L2224/04042 , H01L2224/05016 , H01L2224/05567 , H01L2224/11616 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2924/00014 , H01L2924/1033 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A vertical conduction nitride-based Schottky diode is formed using an insulating substrate which was lifted off after the diode device is encapsulated on the front side with a wafer level molding compound. The wafer level molding compound provides structural support on the front side of the diode device to allow the insulating substrate to be lifted off so that a conductive layer can be formed on the backside of the diode device as the cathode electrode. A vertical conduction nitride-based Schottky diode is thus realized. In another embodiment, a protection circuit for a vertical GaN Schottky diode employs a silicon-based vertical PN junction diode connected in parallel to the GaN Schottky diode to divert reverse bias avalanche current.
摘要翻译：使用绝缘基板形成垂直导电氮化物基肖特基二极管，绝缘基板在二极管器件用晶片级模塑料封装在前侧之后被提起。晶片级成型复合体在二极管器件的前侧提供结构支撑，以允许绝缘基板被提起，使得可以在作为阴极的二极管器件的背面上形成导电层。因此实现了基于垂直导电氮化物的肖特基二极管。在另一个实施例中，用于垂直GaN肖特基二极管的保护电路采用与GaN肖特基二极管并联连接的硅基垂直PN结二极管，以转移反向偏置雪崩电流。

10. 发明授权

US08657653B2 Homogeneous polishing pad for eddy current end-point detection 有权
标题翻译：用于涡流端点检测的均匀抛光垫
公开(公告)号：US08657653B2
公开(公告)日：2014-02-25
申请号：US12895479
申请日：2010-09-30
申请人： William C. Allison , Diane Scott , Ping Huang , Richard Frentzel , Alexander William Simpson
发明人： William C. Allison , Diane Scott , Ping Huang , Richard Frentzel , Alexander William Simpson
IPC分类号： B24D11/00
CPC分类号： B24D11/003 , B24B37/013 , B24B37/205
摘要： Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.
摘要翻译：描述了使用涡流端点检测来研磨半导体衬底的均匀抛光垫。还描述了使用涡流端点检测来制造用于抛光半导体衬底的均匀抛光垫的方法。

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