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    • 4. 发明授权
    • Method of forming a silicon diffusion and/or overlay coating on the
surface of a metallic substrate by chemical vapor deposition
    • 通过化学气相沉积在金属基底的表面上形成硅扩散和/或覆盖涂层的方法
    • US5254369A
    • 1993-10-19
    • US878465
    • 1992-05-05
    • Juichi AraiEiichi OzawaJean-Marie Friedt
    • Juichi AraiEiichi OzawaJean-Marie Friedt
    • C23C10/08C23C16/02C23C16/24C23C16/00
    • C23C10/08C23C16/0209C23C16/24
    • The invention relates to a method of forming a silicon diffusion and/or overlay coating on the surface of a metallic substrate comprising the steps of introducing the sample into a cold wall Low Pressure Chemical Vapor Deposition (LPCVD) enclosure, evacuating the enclosure up to a pressure P.sub.1 which is lower than 0.5 Torr, maintaining said pressure P.sub.1 while heating up said sample to a temperature which is comprised between about room temperature and about 300.degree. C., bringing under same pressure P1 the sample to the CVD temperature comprised between about 50.degree. C. and 1000.degree. C., introducing a gas or gas mixture comprising at least one silicon hydride gas, maintaining the pressure inside the enclosure between about 0.1 and about 100 Torr, maintaining the introduction of said gas or gas mixture in the enclosure for deposition and/or diffusion of silicon on and/or through the surface of said metallic sample to obtain the desired thickness of the silicon diffusion and/or overlay coating, cooling down the sample to about room temperature and withdrawing said sample from said LPCVD enclosure. The substrate is preferably polished to obtain a mirror finish and then cleaned, either mechanically or chemically, with a solvent, or both.
    • 本发明涉及一种在金属基底的表面上形成硅扩散和/或覆盖涂层的方法,包括以下步骤:将样品引入冷壁低压化学气相沉积(LPCVD)外壳中,将外壳排空至 压力P1低于0.5托,保持所述压力P1,同时将所述样品加热至约室温至约300℃之间的温度,使相同压力下的样品达到约50℃的CVD温度 导入包含至少一种氢化硅气体的气体或气体混合物,将外壳内的压力保持在约0.1至约100托之间,保持在外壳中引入所述气体或气体混合物 在所述金属样品的表面上和/或通过所述金属样品的表面沉积和/或扩散硅,以获得硅扩散和/或覆盖涂层的所需厚度, 将样品冷却至约室温,并从所述LPCVD封壳取出所述样品。 优选将基底抛光以获得镜面光洁度,然后用溶剂或两者机械地或化学地清洁。