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1. 发明授权

US08093140B2 Amorphous Ge/Te deposition process 有权
标题翻译：无定形Ge / Te沉积工艺
公开(公告)号：US08093140B2
公开(公告)日：2012-01-10
申请号：US12263403
申请日：2008-10-31
申请人： Philip S. H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
发明人： Philip S. H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
IPC分类号： H01L21/00 , B32B15/04 , C07F7/00
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体可有效地用于形成含锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

2. 发明申请

US20090112009A1 AMORPHOUS GE/TE DEPOSITION PROCESS 有权
标题翻译：非晶态GE / TE沉积工艺
公开(公告)号：US20090112009A1
公开(公告)日：2009-04-30
申请号：US12263403
申请日：2008-10-31
申请人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
发明人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
IPC分类号： H01L21/8246 , B32B15/00 , C07F7/30
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体有用地用于形成含锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

3. 发明申请

US20120108038A1 AMORPHOUS GE/TE DEPOSITION PROCESS 审中-公开
标题翻译：非晶态GE / TE沉积工艺
公开(公告)号：US20120108038A1
公开(公告)日：2012-05-03
申请号：US13346701
申请日：2012-01-09
申请人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
发明人： Philip S.H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
IPC分类号： H01L21/205
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体有用地用于形成含锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

4. 发明授权

US09337054B2 Precursors for silicon dioxide gap fill 有权
标题翻译：二氧化硅填充前体
公开(公告)号：US09337054B2
公开(公告)日：2016-05-10
申请号：US12665929
申请日：2008-06-27
申请人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
发明人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
IPC分类号： H01L21/316 , H01L21/02
CPC分类号： H01L21/02211 , H01L21/02123 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02263 , H01L21/31604 , H01L21/31608 , H01L29/0649
摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.
摘要翻译：描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

5. 发明申请

US20100164057A1 PRECURSORS FOR SILICON DIOXIDE GAP FILL 有权
标题翻译：硅二氧化硅填料的前身
公开(公告)号：US20100164057A1
公开(公告)日：2010-07-01
申请号：US12665929
申请日：2008-06-27
申请人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
发明人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
IPC分类号： H01L29/06 , C09D7/00 , H01L21/762
CPC分类号： H01L21/02211 , H01L21/02123 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02263 , H01L21/31604 , H01L21/31608 , H01L29/0649
摘要： A full fill trench structure comprising a microelectronic device substrate having a high aspect ratio trench therein and a full filled mass of silicon dioxide in the trench, wherein the silicon dioxide is of a substantially void-free character and has a substantially uniform density throughout its bulk mass. A corresponding method of manufacturing a semiconductor product is described, involving use of specific silicon precursor compositions for use in full filling a trench of a microelectronic device substrate, in which the silicon dioxide precursor composition is processed to conduct hydrolysis and condensation reactions for forming the substantially void-free and substantially uniform density silicon dioxide material in the trench. The fill process may be carried out with a precursor fill composition including silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component, e.g., methanol, may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.
摘要翻译：一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底和沟槽中的完整填充质量的二氧化硅，其中二氧化硅具有基本上无空隙的特性，并且在其整个体积中具有基本均匀的密度质量描述了制造半导体产品的相应方法，其涉及使用特定的硅前体组合物，用于完全填充微电子器件衬底的沟槽，其中二氧化硅前体组合物被处理以进行水解和缩合反应，以形成基本上在沟槽中的无空隙和基本均匀的密度二氧化硅材料。填充过程可以用包括硅和锗的前体填充组合物进行，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。可以在前体填充组合物中使用抑制剂组分，例如甲醇，以消除或最小化固化沟槽填充材料中的接缝形成。

6. 发明授权

US08330136B2 High concentration nitrogen-containing germanium telluride based memory devices and processes of making 有权
标题翻译：高浓度含氮锗碲基记忆体及其制备方法
公开(公告)号：US08330136B2
公开(公告)日：2012-12-11
申请号：US13132369
申请日：2009-12-04
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
IPC分类号： H01L29/02 , H01L47/00 , H01L21/00
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，将膜进行退火和抛光。

7. 发明申请

US20110260132A1 HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING 有权
标题翻译：含有高浓度含氮化学物质的基于德耳姆的基于记忆体的器件及其制备方法
公开(公告)号：US20110260132A1
公开(公告)日：2011-10-27
申请号：US13132369
申请日：2009-12-04
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
IPC分类号： H01L45/00 , H01L21/205
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，将膜进行退火和抛光。

8. 发明申请

US20120064719A1 METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES 有权
标题翻译：用辅助金属物种沉积金属的方法和组合物
公开(公告)号：US20120064719A1
公开(公告)日：2012-03-15
申请号：US13256832
申请日：2010-03-17
申请人： Jorge A. Lubguban, JR. , Thomas M. Cameron , Chongying Xu , Weimin Li
发明人： Jorge A. Lubguban, JR. , Thomas M. Cameron , Chongying Xu , Weimin Li
IPC分类号： H01L21/28 , B05D5/12 , H01B1/00
CPC分类号： C23C16/0272 , C23C16/18 , C23C16/45534 , H01L28/65
摘要： A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
摘要翻译：一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌和锶共沉积。该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

9. 发明申请

US20100209598A1 IN SITU GENERATION OF RuO4 FOR ALD OF Ru AND Ru RELATED MATERIALS 有权
标题翻译： RuO钌RuO4原位生成相关材料
公开(公告)号：US20100209598A1
公开(公告)日：2010-08-19
申请号：US12705587
申请日：2010-02-13
申请人： Chongying Xu , Weimin Li , Thomas M. Cameron
发明人： Chongying Xu , Weimin Li , Thomas M. Cameron
IPC分类号： B05D5/12 , C23C16/00
CPC分类号： H01G4/1209 , C23C16/40 , C23C16/4488 , C23C16/45553 , H01G4/008 , H01G4/33 , H01L21/02175 , H01L21/02194 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604
摘要： Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.
摘要翻译：用于在微电子器件基底上用于气相沉积（例如原子层沉积（ALD））含钌膜的原位四氧化钌的装置和方法。可以根据需要通过钌或二氧化钌与氧气或臭氧等氧气反应来生成四氧化钌。在一个实施方案中，由此产生的四氧化钌与锶有机金属前体一起被用于具有极高平滑度和纯度的钌酸锶薄膜的原子层沉积。

10. 发明授权

US08574675B2 Method and composition for depositing ruthenium with assistive metal species 有权
标题翻译：用辅助金属物质沉积钌的方法和组合物
公开(公告)号：US08574675B2
公开(公告)日：2013-11-05
申请号：US13256832
申请日：2010-03-17
申请人： Jorge A. Lubguban, Jr. , Thomas M. Cameron , Chongying Xu , Weimin Li
发明人： Jorge A. Lubguban, Jr. , Thomas M. Cameron , Chongying Xu , Weimin Li
IPC分类号： C23C16/00 , H01L21/28
CPC分类号： C23C16/0272 , C23C16/18 , C23C16/45534 , H01L28/65
摘要： A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
摘要翻译：一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌和锶共沉积。该方法允许非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

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