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1. 发明授权

US08330136B2 High concentration nitrogen-containing germanium telluride based memory devices and processes of making 有权
标题翻译：高浓度含氮锗碲基记忆体及其制备方法
公开(公告)号：US08330136B2
公开(公告)日：2012-12-11
申请号：US13132369
申请日：2009-12-04
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
IPC分类号： H01L29/02 , H01L47/00 , H01L21/00
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，将膜进行退火和抛光。

2. 发明申请

US20110260132A1 HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING 有权
标题翻译：含有高浓度含氮化学物质的基于德耳姆的基于记忆体的器件及其制备方法
公开(公告)号：US20110260132A1
公开(公告)日：2011-10-27
申请号：US13132369
申请日：2009-12-04
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Weimin Li , Philip S. H. Chen
IPC分类号： H01L45/00 , H01L21/205
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，将膜进行退火和抛光。

3. 发明申请

US20110180905A1 GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY 审中-公开
标题翻译： GeSbTe材料包括超流层，以及Ge的使用，以防止从SbXTeY和GeXTeY相互作用的高含量和薄膜晶体结构
公开(公告)号：US20110180905A1
公开(公告)日：2011-07-28
申请号：US12997551
申请日：2009-06-08
申请人： Jun-Fei Zheng , Jeffrey F. Roeder , Philip S.H. Chen
发明人： Jun-Fei Zheng , Jeffrey F. Roeder , Philip S.H. Chen
IPC分类号： H01L29/26 , H01L21/365
CPC分类号： H01L45/1616 , C23C16/305 , H01L45/06 , H01L45/144
摘要： A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.
摘要翻译：一种含有锗，锑和碲的多层膜堆，其可被退火以形成均匀和平滑特征的GST产品材料，其中至少一个含锑层通过中间锗层与含碲层分离，并且多层膜堆叠包括至少两个中间的锗层。可以通过诸如化学气相沉积或原子层沉积的气相沉积技术形成多层膜堆叠。可退火的多层膜堆叠可以形成在高纵横比通孔中，以形成相对于GST产品材料的化学计量和形态特征的优异特征的相变存储器件。

4. 发明授权

US09190609B2 Germanium antimony telluride materials and devices incorporating same 有权
标题翻译：锗锑碲化物材料及其相结合的器件
公开(公告)号：US09190609B2
公开(公告)日：2015-11-17
申请号：US13698642
申请日：2011-05-21
申请人： Jun-Fei Zheng
发明人： Jun-Fei Zheng
IPC分类号： H01L45/00 , C22C28/00 , C23C16/30
CPC分类号： H01L45/065 , C22C28/00 , C23C16/305 , H01L45/06 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.
摘要翻译：一种硫族化物合金组合物，其原子组成包含34至45Ge，2至16％Sb，48至55％Te，3至15％碳和1至10％氮，其中所有原子百分比均为膜的成分总计为100原子％。这种组合物的材料可用于形成相变膜，例如如在相变存储器件衬底上共形涂覆以制造相变随机存取存储器单元。

5. 发明申请

US20110124182A1 SYSTEM FOR THE DELIVERY OF GERMANIUM-BASED PRECURSOR 审中-公开
标题翻译：用于输送基于锗的前驱体的系统
公开(公告)号：US20110124182A1
公开(公告)日：2011-05-26
申请号：US12952183
申请日：2010-11-22
申请人： Jun-Fei Zheng
发明人： Jun-Fei Zheng
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/4485 , C23C16/305 , C23C16/45514 , H01L21/02532 , H01L21/0262
摘要： A supply of a germanium precursor such as germanium n-butylamidinate is provided in close proximity to a microelectronic device substrate to be contacted therewith for deposition of germanium-containing material on the substrate. Specific arrangements are described, including tray and reservoir structures from which solid, liquid, suspended or dissolved germanium precursor can be volatilized for transport to the substrate surface together with other precursors, carrier gases, co-reactants or the like. In such manner, the germanium precursor can be activated independently of the activation of other precursors, within the deposition chamber, to achieve highly efficient formation of germanium-containing material on the substrate, e.g., a GST film of a phase change memory device.
摘要翻译：提供锗前体如正丁基脒基锗的供应，靠近与其接触的微电子器件基底，用于在基底上沉积含锗材料。描述了具体的布置，包括托盘和储存器结构，固体，液体，悬浮或溶解的锗前体可以与其它前体，载气，共反应物等一起挥发以运输到基底表面。以这种方式，可以在沉积室内独立于其它前体的活化来独立地激活锗前体，以实现在衬底上高效形成含锗材料，例如相变存储器件的GST膜。

6. 发明授权

US07826694B2 Electrical/optical integration scheme using direct copper bonding 有权
标题翻译：电/光集成方案采用直接铜接合
公开(公告)号：US07826694B2
公开(公告)日：2010-11-02
申请号：US12002274
申请日：2007-12-13
申请人： Gilroy J. Vandentop , Jun-Fei Zheng
发明人： Gilroy J. Vandentop , Jun-Fei Zheng
IPC分类号： G02B6/12 , H01L21/00
CPC分类号： H01L24/81 , H01L27/156 , H01L31/0203 , H01L31/18 , H01L33/62 , H01L2224/80895 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/00
摘要： An electro-optic semiconductor package and fabrication method provides enhanced performance. An integrated circuit (IC) having one or more IC contact pads is provided, where the IC contact pads are connected to an IC on the IC wafer. An intermediate wafer having one or more intermediate contact pads is provided, where the intermediate contact pads are connected to an electro-optic arrangement on the intermediate wafer. The method further provides for direct copper bonding the IC contact pads to adjacent intermediate contact pads such that an electro-optic semiconductor package results.
摘要翻译：电光半导体封装和制造方法提供增强的性能。提供具有一个或多个IC接触焊盘的集成电路（IC），其中IC接触焊盘连接到IC晶片上的IC。提供具有一个或多个中间接触焊盘的中间晶片，其中中间接触焊盘连接到中间晶片上的电光装置。该方法进一步提供将IC接触焊盘直接铜接合到相邻的中间接触焊盘，从而导致电光半导体封装。

7. 发明授权

US07359591B2 Electrical/optical integration scheme using direct copper bonding 失效
标题翻译：电/光集成方案采用直接铜接合
公开(公告)号：US07359591B2
公开(公告)日：2008-04-15
申请号：US11488389
申请日：2006-07-14
申请人： Gilroy J. Vandentop , Jun-Fei Zheng
发明人： Gilroy J. Vandentop , Jun-Fei Zheng
IPC分类号： G02B6/12 , H01L21/00
CPC分类号： H01L24/81 , H01L27/156 , H01L31/0203 , H01L31/18 , H01L33/62 , H01L2224/80895 , H01L2224/81801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/19042 , H01L2924/30105 , H01L2924/30107 , H01L2924/00
摘要： An electro-optic semiconductor package and fabrication method provides enhanced performance. An integrated circuit (IC) having one or more IC contact pads is provided, where the IC contact pads are connected to an IC on the IC wafer. An intermediate wafer having one or more intermediate contact pads is provided, where the intermediate contact pads are connected to an electro-optic arrangement on the intermediate wafer. The method further provides for direct copper bonding the IC contact pads to adjacent intermediate contact pads such that an electro-optic semiconductor package results.
摘要翻译：电光半导体封装和制造方法提供增强的性能。提供具有一个或多个IC接触焊盘的集成电路（IC），其中IC接触焊盘连接到IC晶片上的IC。提供具有一个或多个中间接触焊盘的中间晶片，其中中间接触焊盘连接到中间晶片上的电光装置。该方法进一步提供将IC接触焊盘直接铜接合到相邻的中间接触焊盘，从而导致电光半导体封装。

8. 发明授权

US07006734B2 Optical waveguide Y-branch splitter 失效
标题翻译：光波导Y分支分路器
公开(公告)号：US07006734B2
公开(公告)日：2006-02-28
申请号：US10675148
申请日：2003-09-29
申请人： Jun-Fei Zheng , Christina Manolatou , Kazumi Wada
发明人： Jun-Fei Zheng , Christina Manolatou , Kazumi Wada
IPC分类号： G02B6/26
CPC分类号： G02B6/2804 , G02B6/125
摘要： A method and apparatus for splitting/coupling optical signal(s). A unitary waveguide section having a first lateral dimension perpendicular to a propagation axis of the unitary section is provided. An offset waveguide section is optically coupled to the unitary waveguide section. The offset waveguide section has a second lateral dimension approximately equal to twice the first lateral dimension. Two branching waveguide sections having first ends are optically coupled to the offset section at the first ends.
摘要翻译：一种用于分离/耦合光信号的方法和装置。提供了具有垂直于整体部分的传播轴的第一横向尺寸的单一波导部分。偏移波导部分光耦合到单一波导部分。偏移波导部分具有大致等于第一横向尺寸的两倍的第二横向尺寸。具有第一端的两个分支波导部分在第一端处光耦合到偏移部分。

9. 发明授权

US06876794B2 Multi-waveguide layer H-tree distribution device 有权
标题翻译：多波导层H树分布装置
公开(公告)号：US06876794B2
公开(公告)日：2005-04-05
申请号：US10364624
申请日：2003-02-10
申请人： Jun-Fei Zheng , Ian Young
发明人： Jun-Fei Zheng , Ian Young
IPC分类号： G02B6/12 , G02B6/125 , G02B6/43 , G02B6/26
CPC分类号： G02B6/125 , G02B6/43 , G02B2006/1215
摘要： An optical network is formed of multiple H-tree distribution devices, separated into different waveguide layers. The optical network receives an input optical signal, such as an optical clock signal, and makes duplicate copies of that input signal. The duplicate copies are routed through the connected H-tree distribution devices, which are arranged to produce identical, synchronized copies of the clock signal. The network can take the form of a 1×2N device, where 2N represents the number of these output signals. The H-tree distribution devices forming the network are of varying size and may be formed in different waveguide layers with different index of refraction differentials between the H-tree devices and surrounding claddings. In some forms, the optical network is integrated with optical-to-electrical converters, i.e., photodetectors, which take the optical output signals and convert them to synchronized electrical signals that may be communicated to digital circuits.
摘要翻译：光网络由多个H树分布设备组成，分离成不同的波导层。光网络接收诸如光时钟信号的输入光信号，并且重复该输入信号。复制副本通过连接的H树分发设备进行路由，这些设备被配置为产生相同的同步的时钟信号副本。网络可以采取1x2 设备的形式，其中2 表示这些输出信号的数量。形成网络的H树分布设备具有不同的尺寸，并且可以形成在H树设备和周围包层之间具有不同折射率差异的不同波导层中。在一些形式中，光网络与光电转换器（即，光电检测器）集成，其获取光输出信号并将其转换为可传送到数字电路的同步电信号。

10. 发明申请

US20130112933A1 GERMANIUM ANTIMONY TELLURIDE MATERIALS AND DEVICES INCORPORATING SAME 有权
标题翻译：德国抗微生物细菌材料和装置
公开(公告)号：US20130112933A1
公开(公告)日：2013-05-09
申请号：US13698642
申请日：2011-05-21
申请人： Jun-Fei Zheng
发明人： Jun-Fei Zheng
IPC分类号： H01L45/00
CPC分类号： H01L45/065 , C22C28/00 , C23C16/305 , H01L45/06 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.
摘要翻译：一种硫族化物合金组合物，其原子组成包含34至45Ge，2至16％Sb，48至55％Te，3至15％碳和1至10％氮，其中所有原子百分比均为膜的成分总计为100原子％。这种组合物的材料可用于形成相变膜，例如如在相变存储器件衬底上共形涂覆以制造相变随机存取存储器单元。

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