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1. 发明授权

US07147709B1 Non-contact etch annealing of strained layers 有权
标题翻译：应变层的非接触蚀刻退火
公开(公告)号：US07147709B1
公开(公告)日：2006-12-12
申请号：US10701723
申请日：2003-11-04
申请人： Philip Ong , Francois Henley , Igor Malik
发明人： Philip Ong , Francois Henley , Igor Malik
IPC分类号： H01L21/3105
CPC分类号： C30B33/00 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02573 , H01L21/02658 , H01L21/3065
摘要： The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed. The method may further comprises growing a fourth semiconductor layer having the second lattice constant on the second semiconductor layer, wherein the fourth semiconductor layer is relaxed, and growing a strained fifth semiconductor layer having the first semiconductor lattice constant on the fourth semiconductor layer. The method controls the surface roughness of the semiconductor layers. The method also has the unexpected benefit of reducing dislocations in the semiconductor layers.
摘要翻译：本发明提供一种形成应变半导体层的方法。该方法包括在具有第一晶格常数的晶片上生长具有渐变掺杂剂分布的应变第一半导体层。掺杂剂赋予第一半导体层第二晶格常数。该方法还包括在第一半导体层上生长具有第二晶格常数的应变盒状第二半导体层，并在第二半导体层上生长具有第一晶格常数的牺牲第三半导体层。该方法还包括对第三和第二半导体层进行蚀刻退火，其中去除第三半导体层并松弛第二半导体层。该方法还可以包括在第二半导体层上生长具有第二晶格常数的第四半导体层，其中第四半导体层被松弛，并且在第四半导体层上生长具有第一半导体晶格常数的应变第五半导体层。该方法控制半导体层的表面粗糙度。该方法还具有减少半导体层中位错的意想不到的好处。

2. 发明申请

US20050233545A1 Method and system for lattice space engineering 有权
标题翻译：格子空间工程方法与系统
公开(公告)号：US20050233545A1
公开(公告)日：2005-10-20
申请号：US11104298
申请日：2005-04-11
申请人： Francois Henley , Philip Ong , Igor Malik
发明人： Francois Henley , Philip Ong , Igor Malik
IPC分类号： H01L21/00 , H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.
摘要翻译：一种用于制造多层基片的系统。该系统具有支撑构件，适于处理包括从第一状态到第二状态的第一侧和第二侧的材料膜。支撑构件附接到材料膜的第一侧。第二种状态包括压力状态。该系统具有手柄基板，该基板包括面，该表面适于附接到材料膜的第二侧。支撑构件能够从材料膜的第一侧分离，从而将包括处于第二状态的材料膜的手柄基板附接到手柄基板的表面。

3. 发明申请

US20060024917A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
公开(公告)号：US20060024917A1
公开(公告)日：2006-02-02
申请号：US11043477
申请日：2005-01-24
申请人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
发明人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
IPC分类号： H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

4. 发明申请

US20060160329A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US20060160329A1
公开(公告)日：2006-07-20
申请号：US11378126
申请日：2006-03-17
申请人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
发明人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
IPC分类号： H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

5. 发明申请

US20070232022A1 Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species 有权
标题翻译：使用热处理制造键合衬底结构以除去氧物质的方法和结构
公开(公告)号：US20070232022A1
公开(公告)日：2007-10-04
申请号：US11394597
申请日：2006-03-31
申请人： Francois Henley , James Sullivan , Sien Kang , Philip Ong , Harry Kirk , David Jacy , Igor Malik
发明人： Francois Henley , James Sullivan , Sien Kang , Philip Ong , Harry Kirk , David Jacy , Igor Malik
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.
摘要翻译：一种制造键合衬底结构的方法，例如硅上的硅。在具体实施例中，该方法包括提供从耦合到第二硅衬底的第一硅衬底转移的单晶硅材料的厚度。在具体实施例中，第二硅衬底具有第二表面区域，该第二表面区域从单晶硅材料的厚度连接到第一表面区域，以形成具有第一特征的界面区域，该第一特征包括单一厚度的氧化硅材料晶体硅材料和第二硅衬底。该方法包括使界面区域进行热处理以使接口区域从第一特性改变到第二特性。在具体实施方案中，第二特性不含氧化硅材料，并且是设置在单晶硅材料的厚度与第二硅衬底之间的外延形成的硅材料。该方法包括在热处理期间保持界面区域没有多个空隙以形成外延形成的硅材料，以将单晶硅材料的厚度电耦合到第二硅衬底。

6. 发明申请

US20070051299A1 Non-contact etch annealing of strained layers 审中-公开
标题翻译：应变层的非接触蚀刻退火
公开(公告)号：US20070051299A1
公开(公告)日：2007-03-08
申请号：US11594536
申请日：2006-11-07
申请人： Philip Ong , Francois Henley , Igor Malik
发明人： Philip Ong , Francois Henley , Igor Malik
IPC分类号： C30B13/00
CPC分类号： H01L21/3065 , C30B33/00 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/02573 , H01L21/02658
摘要： The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed. The method may further comprises growing a fourth semiconductor layer having the second lattice constant on the second semiconductor layer, wherein the fourth semiconductor layer is relaxed, and growing a strained fifth semiconductor layer having the first semiconductor lattice constant on the fourth semiconductor layer. The method controls the surface roughness of the semiconductor layers. The method also has the unexpected benefit of reducing dislocations in the semiconductor layers.
摘要翻译：本发明提供一种形成应变半导体层的方法。该方法包括在具有第一晶格常数的晶片上生长具有渐变掺杂剂分布的应变第一半导体层。掺杂剂赋予第一半导体层第二晶格常数。该方法还包括在第一半导体层上生长具有第二晶格常数的应变盒状第二半导体层，并在第二半导体层上生长具有第一晶格常数的牺牲第三半导体层。该方法还包括对第三和第二半导体层进行蚀刻退火，其中去除第三半导体层并松弛第二半导体层。该方法还可以包括在第二半导体层上生长具有第二晶格常数的第四半导体层，其中第四半导体层被松弛，并且在第四半导体层上生长具有第一半导体晶格常数的应变第五半导体层。该方法控制半导体层的表面粗糙度。该方法还具有减少半导体层中位错的意想不到的好处。

7. 发明申请

US20050247668A1 Method for smoothing a film of material using a ring structure 审中-公开
标题翻译：使用环形结构来平滑材料薄膜的方法
公开(公告)号：US20050247668A1
公开(公告)日：2005-11-10
申请号：US10841253
申请日：2004-05-06
申请人： Igor Malik , Francois Henley , Harry Kirk
发明人： Igor Malik , Francois Henley , Harry Kirk
IPC分类号： B44C1/22 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/30625 , H01L21/3065
摘要： A method for treating a surface region having a surface roughness, e.g., 0.3-30 nm rms. The method includes providing a substrate, which has a surface region, a thickness of material, and a backside surface. The surface region is characterized by a first predetermined surface roughness value. The thickness of material is defined between the surface region and the backside surface. The method includes maintaining the substrate on a susceptor from the backside surface to hold the substrate in place within a treatment chamber. The method includes maintaining the surface region within an annular region, which is substantially a similar height as the surface region. The annular region has a width surrounding the surface region. The method introduces hydrogen gas into the treatment chamber and introduces an etchant gas into the treatment chamber. The method exposes the surface region having the first predetermined surface roughness value and the width of the annular region to at least the hydrogen gas and the etchant gas. The method reduces the predetermined surface roughness value from the predetermined surface roughness value to a second predetermined surface roughness value from a first edge of the substrate to a second edge of the substrate along the surface region, whereupon the reducing occurs substantially evenly across the first edge of the substrate to the second edge of the substrate.
摘要翻译：一种用于处理表面粗糙度（例如0.3-30nm rms）的表面区域的方法。该方法包括提供具有表面区域，材料厚度和背面的基板。表面区域的特征在于第一预定表面粗糙度值。材料的厚度被限定在表面区域和背面之间。该方法包括将衬底从背面保持在基座上，以将衬底保持在处理室内的适当位置。该方法包括将表面区域保持在与表面区域基本上类似的高度的环形区域内。环形区域具有围绕表面区域的宽度。该方法将氢气引入处理室，并将蚀刻剂气体引入处理室。该方法将具有第一预定表面粗糙度值的表面区域和环形区域的宽度暴露于至少氢气和蚀刻剂气体。该方法将预定表面粗糙度值从基板的第一边缘到基板的第二边缘沿着表面区域从预定表面粗糙度值减小到第二预定表面粗糙度值，从而基本上均匀地在第一边缘的衬底到衬底的第二边缘。

8. 发明申请

US20070087531A1 Method and apparatus for flag-less water bonding tool 有权
标题翻译：无标签水粘合工具的方法和装置
公开(公告)号：US20070087531A1
公开(公告)日：2007-04-19
申请号：US11581065
申请日：2006-10-13
申请人： Harry Kirk , Francois Henley , Philip Ong
发明人： Harry Kirk , Francois Henley , Philip Ong
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/67092 , H01L21/187 , H01L21/2007
摘要： Embodiments in accordance with the present invention relate to methods and apparatuses for bonding together substrates in a manner that suppresses the formation of voids between them. In a specific embodiment, a backside of each substrate is adhered to a front area of flexible, porous chuck having a rear area in pneumatic communication with a vacuum. Application of the vacuum causes the chuck and the associated substrate to slightly bend. Owing to this bending, physical contact between local portions on the front side of the flexed substrates may be initiated, while maintaining other portions on front side of the substrates substantially free from contact with each other. A bond wave is formed and maintained at a determined velocity to form a continuous interface joining the front sides of the substrates, without formation of voids therebetween. In one embodiment, the chucks may comprise porous polyethylene sealed with polyimide except for a portion of the front configured to be in contact with the substrate, and a portion of the backside configured to be in communication with a vacuum source.
摘要翻译：根据本发明的实施例涉及以抑制它们之间的空隙形成的方式将基板结合在一起的方法和装置。在具体实施例中，每个基板的背面粘附到具有与真空气动连通的后部区域的柔性多孔卡盘的前部区域。真空的应用导致卡盘和相关联的基底稍微弯曲。由于这种弯曲，可以启动弯曲基板的前侧上的局部部分之间的物理接触，同时保持基板的正面上的其他部分基本上不彼此接触。键合波形成并保持在确定的速度以形成连接基片的前侧的连续界面，而不在其间形成空隙。在一个实施例中，卡盘可以包括用聚酰亚胺密封的多孔聚乙烯，除了配置为与基板接触的前部的一部分，并且背面的一部分被配置为与真空源连通。

9. 发明申请

US20050150597A1 Apparatus and method for controlled cleaving 审中-公开
标题翻译：用于控制切割的装置和方法
公开(公告)号：US20050150597A1
公开(公告)日：2005-07-14
申请号：US10754980
申请日：2004-01-09
申请人： Francois Henley , Hongbee Teoh , Anthony Paler , Albert Lamm , Philip Ong
发明人： Francois Henley , Hongbee Teoh , Anthony Paler , Albert Lamm , Philip Ong
IPC分类号： B28D5/00 , B32B1/00 , H01L21/00 , H01L21/762
CPC分类号： H01L21/67092 , B28D5/00 , H01L21/76251 , Y10T156/1928
摘要： An apparatus and method for controlled cleaving is presented. Embodiments of the present invention include an apparatus for cleaving a substrate comprising a bottom shell coupled to a hinge mechanism, a top shell coupled to the hinge mechanism, a plurality of o-rings or suction cups coupled to the top and bottom shells for providing a suction force sufficient to exert a tensile force to the top and bottom of a substrate, a compliant member for sealing a portion of a grove edge of a substrate and for maintaining a pressure inside a volume formed between the groove edge and the groove edge of the substrate, a gas port for supplying gas to the volume, and a height adjustment mechanism coupled to the top shell and the bottom shell for separating the top shell from the bottom shell. One embodiment of the invention eliminates the use of gas system and is replaced by a blade edge to initiate propagation and applied tensile force of suction cups to apply tensile forces prior to initiation, control cleave process and maintain layer separation during and after cleaving.
摘要翻译：提出了一种控制劈裂的装置和方法。本发明的实施例包括一种用于切割基底的装置，包括联接到铰链机构的底壳，联接到铰链机构的顶壳，耦合到顶壳和底壳的多个O形圈或吸盘，用于提供足以向基材的顶部和底部施加张力的吸力，用于密封基材的凹槽边缘的一部分并用于保持形成在凹槽边缘和凹槽边缘之间的体积内的压力衬底，用于向体积供应气体的气体端口，以及联接到顶部壳体和底部壳体的高度调节机构，用于将顶部壳体与底部壳体分离。本发明的一个实施例消除了气体系统的使用，并且被叶片边缘替代以启动吸盘的传播和施加的拉力，以在开始之前施加拉伸力，控制裂开过程并且在裂开期间和之后维持层分离。

10. 发明申请

US20070235074A1 METHOD AND STRUCTURE FOR FABRICATING SOLAR CELLS USING A LAYER TRANSFER PROCESS 有权
标题翻译：使用层传输方法制造太阳能电池的方法和结构
公开(公告)号：US20070235074A1
公开(公告)日：2007-10-11
申请号：US11685686
申请日：2007-03-13
申请人： Francois Henley , Philip Ong
发明人： Francois Henley , Philip Ong
IPC分类号： H01L31/00
CPC分类号： H01L31/1804 , H01L31/0232 , H01L31/0392 , H01L31/03925 , H01L31/0725 , H01L31/0745 , H01L31/077 , H01L31/1872 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.
摘要翻译：光伏电池装置，例如太阳能电池，太阳能电池板和制造方法。该装置具有包括第一表面和第二表面的光学透明基底。包括具有第一表面区域和第二表面区域的材料的第一厚度（例如，半导体材料，单晶材料）。在优选实施例中，表面区域覆盖在光学透明基板的第一表面上。该装置具有设置在材料厚度的第一表面区域和光学透明材料的第一表面之间的光学耦合材料。半导体材料的第二厚度覆盖在第二表面区域上以形成半导体材料的所得厚度。

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