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1. 发明申请

US20060024917A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
公开(公告)号：US20060024917A1
公开(公告)日：2006-02-02
申请号：US11043477
申请日：2005-01-24
申请人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
发明人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
IPC分类号： H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

2. 发明申请

US20060160329A1 Method and system for fabricating strained layers for the manufacture of integrated circuits 有权
标题翻译：用于制造用于制造集成电路的应变层的方法和系统
公开(公告)号：US20060160329A1
公开(公告)日：2006-07-20
申请号：US11378126
申请日：2006-03-17
申请人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
发明人： Francois Henley , Philip Ong , Igor Malik , Harry Kirk
IPC分类号： H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

3. 发明授权

US07147709B1 Non-contact etch annealing of strained layers 有权
标题翻译：应变层的非接触蚀刻退火
公开(公告)号：US07147709B1
公开(公告)日：2006-12-12
申请号：US10701723
申请日：2003-11-04
申请人： Philip Ong , Francois Henley , Igor Malik
发明人： Philip Ong , Francois Henley , Igor Malik
IPC分类号： H01L21/3105
CPC分类号： C30B33/00 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02573 , H01L21/02658 , H01L21/3065
摘要： The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed. The method may further comprises growing a fourth semiconductor layer having the second lattice constant on the second semiconductor layer, wherein the fourth semiconductor layer is relaxed, and growing a strained fifth semiconductor layer having the first semiconductor lattice constant on the fourth semiconductor layer. The method controls the surface roughness of the semiconductor layers. The method also has the unexpected benefit of reducing dislocations in the semiconductor layers.
摘要翻译：本发明提供一种形成应变半导体层的方法。该方法包括在具有第一晶格常数的晶片上生长具有渐变掺杂剂分布的应变第一半导体层。掺杂剂赋予第一半导体层第二晶格常数。该方法还包括在第一半导体层上生长具有第二晶格常数的应变盒状第二半导体层，并在第二半导体层上生长具有第一晶格常数的牺牲第三半导体层。该方法还包括对第三和第二半导体层进行蚀刻退火，其中去除第三半导体层并松弛第二半导体层。该方法还可以包括在第二半导体层上生长具有第二晶格常数的第四半导体层，其中第四半导体层被松弛，并且在第四半导体层上生长具有第一半导体晶格常数的应变第五半导体层。该方法控制半导体层的表面粗糙度。该方法还具有减少半导体层中位错的意想不到的好处。

4. 发明申请

US20050233545A1 Method and system for lattice space engineering 有权
标题翻译：格子空间工程方法与系统
公开(公告)号：US20050233545A1
公开(公告)日：2005-10-20
申请号：US11104298
申请日：2005-04-11
申请人： Francois Henley , Philip Ong , Igor Malik
发明人： Francois Henley , Philip Ong , Igor Malik
IPC分类号： H01L21/00 , H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762
CPC分类号： H01L21/2007 , H01L21/76251
摘要： A system for manufacturing multilayered substrates. The system has a support member is adapted to process a film of material comprising a first side and a second side from a first state to a second state. The support member is attached to the first side of the film of material. The second state comprises a stressed state. The system has a handle substrate comprising a face, which is adapted to be attached to the second side of the film of material. The support member is capable of being detached from the first side of the film of material thereby leaving the handle substrate comprising the film of material in the second state being attached to the face of the handle substrate.
摘要翻译：一种用于制造多层基片的系统。该系统具有支撑构件，适于处理包括从第一状态到第二状态的第一侧和第二侧的材料膜。支撑构件附接到材料膜的第一侧。第二种状态包括压力状态。该系统具有手柄基板，该基板包括面，该表面适于附接到材料膜的第二侧。支撑构件能够从材料膜的第一侧分离，从而将包括处于第二状态的材料膜的手柄基板附接到手柄基板的表面。

5. 发明申请

US20070232022A1 Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species 有权
标题翻译：使用热处理制造键合衬底结构以除去氧物质的方法和结构
公开(公告)号：US20070232022A1
公开(公告)日：2007-10-04
申请号：US11394597
申请日：2006-03-31
申请人： Francois Henley , James Sullivan , Sien Kang , Philip Ong , Harry Kirk , David Jacy , Igor Malik
发明人： Francois Henley , James Sullivan , Sien Kang , Philip Ong , Harry Kirk , David Jacy , Igor Malik
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.
摘要翻译：一种制造键合衬底结构的方法，例如硅上的硅。在具体实施例中，该方法包括提供从耦合到第二硅衬底的第一硅衬底转移的单晶硅材料的厚度。在具体实施例中，第二硅衬底具有第二表面区域，该第二表面区域从单晶硅材料的厚度连接到第一表面区域，以形成具有第一特征的界面区域，该第一特征包括单一厚度的氧化硅材料晶体硅材料和第二硅衬底。该方法包括使界面区域进行热处理以使接口区域从第一特性改变到第二特性。在具体实施方案中，第二特性不含氧化硅材料，并且是设置在单晶硅材料的厚度与第二硅衬底之间的外延形成的硅材料。该方法包括在热处理期间保持界面区域没有多个空隙以形成外延形成的硅材料，以将单晶硅材料的厚度电耦合到第二硅衬底。

6. 发明申请

US20070051299A1 Non-contact etch annealing of strained layers 审中-公开
标题翻译：应变层的非接触蚀刻退火
公开(公告)号：US20070051299A1
公开(公告)日：2007-03-08
申请号：US11594536
申请日：2006-11-07
申请人： Philip Ong , Francois Henley , Igor Malik
发明人： Philip Ong , Francois Henley , Igor Malik
IPC分类号： C30B13/00
CPC分类号： H01L21/3065 , C30B33/00 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/02573 , H01L21/02658
摘要： The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed. The method may further comprises growing a fourth semiconductor layer having the second lattice constant on the second semiconductor layer, wherein the fourth semiconductor layer is relaxed, and growing a strained fifth semiconductor layer having the first semiconductor lattice constant on the fourth semiconductor layer. The method controls the surface roughness of the semiconductor layers. The method also has the unexpected benefit of reducing dislocations in the semiconductor layers.
摘要翻译：本发明提供一种形成应变半导体层的方法。该方法包括在具有第一晶格常数的晶片上生长具有渐变掺杂剂分布的应变第一半导体层。掺杂剂赋予第一半导体层第二晶格常数。该方法还包括在第一半导体层上生长具有第二晶格常数的应变盒状第二半导体层，并在第二半导体层上生长具有第一晶格常数的牺牲第三半导体层。该方法还包括对第三和第二半导体层进行蚀刻退火，其中去除第三半导体层并松弛第二半导体层。该方法还可以包括在第二半导体层上生长具有第二晶格常数的第四半导体层，其中第四半导体层被松弛，并且在第四半导体层上生长具有第一半导体晶格常数的应变第五半导体层。该方法控制半导体层的表面粗糙度。该方法还具有减少半导体层中位错的意想不到的好处。

7. 发明申请

US20050247668A1 Method for smoothing a film of material using a ring structure 审中-公开
标题翻译：使用环形结构来平滑材料薄膜的方法
公开(公告)号：US20050247668A1
公开(公告)日：2005-11-10
申请号：US10841253
申请日：2004-05-06
申请人： Igor Malik , Francois Henley , Harry Kirk
发明人： Igor Malik , Francois Henley , Harry Kirk
IPC分类号： B44C1/22 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/30625 , H01L21/3065
摘要： A method for treating a surface region having a surface roughness, e.g., 0.3-30 nm rms. The method includes providing a substrate, which has a surface region, a thickness of material, and a backside surface. The surface region is characterized by a first predetermined surface roughness value. The thickness of material is defined between the surface region and the backside surface. The method includes maintaining the substrate on a susceptor from the backside surface to hold the substrate in place within a treatment chamber. The method includes maintaining the surface region within an annular region, which is substantially a similar height as the surface region. The annular region has a width surrounding the surface region. The method introduces hydrogen gas into the treatment chamber and introduces an etchant gas into the treatment chamber. The method exposes the surface region having the first predetermined surface roughness value and the width of the annular region to at least the hydrogen gas and the etchant gas. The method reduces the predetermined surface roughness value from the predetermined surface roughness value to a second predetermined surface roughness value from a first edge of the substrate to a second edge of the substrate along the surface region, whereupon the reducing occurs substantially evenly across the first edge of the substrate to the second edge of the substrate.
摘要翻译：一种用于处理表面粗糙度（例如0.3-30nm rms）的表面区域的方法。该方法包括提供具有表面区域，材料厚度和背面的基板。表面区域的特征在于第一预定表面粗糙度值。材料的厚度被限定在表面区域和背面之间。该方法包括将衬底从背面保持在基座上，以将衬底保持在处理室内的适当位置。该方法包括将表面区域保持在与表面区域基本上类似的高度的环形区域内。环形区域具有围绕表面区域的宽度。该方法将氢气引入处理室，并将蚀刻剂气体引入处理室。该方法将具有第一预定表面粗糙度值的表面区域和环形区域的宽度暴露于至少氢气和蚀刻剂气体。该方法将预定表面粗糙度值从基板的第一边缘到基板的第二边缘沿着表面区域从预定表面粗糙度值减小到第二预定表面粗糙度值，从而基本上均匀地在第一边缘的衬底到衬底的第二边缘。

8. 发明授权

US07598153B2 Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species 有权
标题翻译：使用热处理制造键合衬底结构以除去氧物质的方法和结构
公开(公告)号：US07598153B2
公开(公告)日：2009-10-06
申请号：US11394597
申请日：2006-03-31
申请人： Francois J. Henley , James Andrew Sullivan , Sien Giok Kang , Philip James Ong , Harry Robert Kirk , David Jacy , Igor Malik
发明人： Francois J. Henley , James Andrew Sullivan , Sien Giok Kang , Philip James Ong , Harry Robert Kirk , David Jacy , Igor Malik
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.
摘要翻译：一种制造键合衬底结构的方法，例如硅上的硅。在具体实施例中，该方法包括提供从耦合到第二硅衬底的第一硅衬底转移的单晶硅材料的厚度。在具体实施例中，第二硅衬底具有第二表面区域，该第二表面区域从单晶硅材料的厚度连接到第一表面区域，以形成具有第一特征的界面区域，该第一特征包括单一厚度的氧化硅材料晶体硅材料和第二硅衬底。该方法包括使界面区域进行热处理以使接口区域从第一特性改变到第二特性。在具体实施方案中，第二特性不含氧化硅材料，并且是设置在单晶硅材料的厚度与第二硅衬底之间的外延形成的硅材料。该方法包括在热处理期间保持界面区域没有多个空隙以形成外延形成的硅材料，以将单晶硅材料的厚度电耦合到第二硅衬底。

9. 发明申请

US20070259526A1 Surface finishing of SOI substrates using an EPI process 审中-公开
标题翻译：使用EPI工艺对SOI衬底进行表面处理
公开(公告)号：US20070259526A1
公开(公告)日：2007-11-08
申请号：US11827523
申请日：2007-07-11
申请人： Sien Kang , Igor Malik
发明人： Sien Kang , Igor Malik
IPC分类号： H01L21/311
摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in an etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.
摘要翻译：一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。该方法包括提供包含切割表面的基底，其特征在于预定的表面粗糙度值。衬底还具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中，以将预定的表面粗糙度值减小约百分之五十以上。优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

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