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1. 发明授权

US5840897A Metal complex source reagents for chemical vapor deposition 失效
标题翻译：用于化学气相沉积的金属复合源试剂
公开(公告)号：US5840897A
公开(公告)日：1998-11-24
申请号：US477797
申请日：1995-06-07
申请人： Peter S. Kirlin , Duncan W. Brown , Thomas H. Baum , Brian A. Vaarstra , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Thomas H. Baum , Brian A. Vaarstra , Robin A. Gardiner
IPC分类号： H01L21/31 , C07F1/08 , C07F3/00 , C07F3/04 , C07F5/00 , C07F7/00 , C07F7/28 , C07F9/00 , C07F11/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24 , C07F15/00 , C07D213/22
CPC分类号： C23C16/18 , C07F19/005 , C07F3/003 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A metalorganic complex of the formula: MA.sub.y X wherein: M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：下式的金属有机络合物：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮类及其硫和氮类似物，β-酮酯及其硫和氮类似物，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧化物和席夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

2. 发明授权

US6126996A Metal complex source reagents for chemical vapor deposition 失效
标题翻译：用于化学气相沉积的金属复合源试剂
公开(公告)号：US6126996A
公开(公告)日：2000-10-03
申请号：US990943
申请日：1997-12-15
申请人： Peter S. Kirlin , Duncan W. Brown , Thomas W. Baum , Brian A. Vaarstra , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Thomas W. Baum , Brian A. Vaarstra , Robin A. Gardiner
IPC分类号： H01L21/31 , C07F1/08 , C07F3/00 , C07F3/04 , C07F5/00 , C07F7/00 , C07F7/28 , C07F9/00 , C07F11/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C23C16/18 , C07F19/005 , C07F3/003 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAY with X;y is an integer having a value of 2, 3 or 4;each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：下式的金属有机络合物：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许MAY与X的络合; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Th，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，Pd，Pt ，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮类及其硫和氮类似物，β-酮酯及其硫和氮类似物，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧化物和席夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

3. 发明申请

US20110171382A1 SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US20110171382A1
公开(公告)日：2011-07-14
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
IPC分类号： C23C16/06 , C07C49/92 , C07F7/28 , C07F7/00 , C07F7/24 , C07F5/00 , C09D1/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
摘要翻译：一种金属有机络合物组合物，其包含选自以下的金属有机络合物：包含与一个或多个单齿或多齿有机配体配位的一个或多个金属中心原子的金属有机络合物，并与一个或多个络合的单齿或多齿配位体络合，所述配位体含有一个或多个独立地选自元素C，N，H，S，O和F的原子的原子; 其中当金属原子数为1并且同时复合单齿或多齿配体的数目为1时，金属有机络合物的络合单齿或多齿配体选自β-酮亚胺，β-二亚胺，C2- C10链烯基，C2-C15环烯基和C6-C10芳基。

4. 发明授权

US5919522A Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
标题翻译：使用多胺类前体生长BaSrTiO3
公开(公告)号：US5919522A
公开(公告)日：1999-07-06
申请号：US835768
申请日：1997-04-08
申请人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
IPC分类号： C07C49/12 , C07C211/14 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/18 , C23C16/40 , C23C16/409 , C23C16/4481
摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要翻译：一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

5. 发明授权

US5453494A Metal complex source reagents for MOCVD 失效
标题翻译：用于MOCVD的金属络合物源试剂
公开(公告)号：US5453494A
公开(公告)日：1995-09-26
申请号：US181800
申请日：1994-01-18
申请人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24 , C06F5/00 , C07D213/22 , H01B12/00
CPC分类号： G02B6/02 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. The complexes of the invention utilize monodentate or multidentate ligands to provide additional coordination to the metal atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications.
摘要翻译：用于形成含金属膜的金属有机化学气相沉积（MOCVD）源试剂，如薄膜氧化铜高温超导体（HTSC）材料。所述源试剂具有下式：其中：M是金属如Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm Yb，Lu Bi ，Tl，Y或Pb; A是单齿或多齿有机配体; y为2或3; 在STP条件下，MAy是一个稳定的子复合体; 并且X是与M配位且含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。配体A可以例如选自 β-二酮酸酯，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧基化物和希夫碱。本发明的络合物利用单齿或多齿配位体为金属原子提供额外的配位，使得所得复合物具有增强的挥发性特征，并且增强了对MOCVD应用的适用性。

6. 发明授权

US5280012A Method of forming a superconducting oxide layer by MOCVD 失效
标题翻译：通过MOCVD形成超导氧化物层的方法
公开(公告)号：US5280012A
公开(公告)日：1994-01-18
申请号：US918141
申请日：1992-07-22
申请人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24 , C23C16/00 , B05D5/12
CPC分类号： C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441 , Y10S505/73 , Y10S505/734
摘要： This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.
摘要翻译：本发明涉及氧化铜超导材料的金属有机化学气相沉积（MOCVD）的形成。描述了适用于高温超导体（HTSC）材料形成的II族元素的各种源试剂，包括β-二酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基，全氟烷氧基和席夫碱，以及这些II族化合物的配合物，利用单齿或多齿配体，以提供与IIA族原子的额外配位，使得所得复合物具有增强的挥发性特征，并增强了对MOCVD应用的适用性。还公开了合成这种化合物和络合物的方法，包括制备具有增强的热稳定性特征的II族金属β-二酮化合物的方法。

7. 发明授权

US5820664A Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
标题翻译：用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液
公开(公告)号：US5820664A
公开(公告)日：1998-10-13
申请号：US414504
申请日：1995-03-31
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G02B6/036 , H01L39/24 , C09K3/00
CPC分类号： H01L39/2441 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , Y10S423/14
摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.
摘要翻译：一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

8. 发明授权

US5225561A Source reagent compounds for MOCVD of refractory films containing group IIA elements 失效
$Source reagent compounds for MOCVD of refractory films containing group IIA elements$
标题翻译：用于含有IIA族元素的耐火薄膜的MOCVD的源试剂化合物
公开(公告)号：US5225561A
公开(公告)日：1993-07-06
申请号：US581631
申请日：1990-09-12
申请人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： G02B6/02 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： Metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics. Further disclosed are a vertical inverted reactor for chemical vapor deposition, and various methods of processing applied metal oxide films for enhanced HTSC character.
摘要翻译：金属有机化学气相沉积（MOCVD）形成氧化铜超导材料。描述了适用于高温超导体（HTSC）材料形成的II族元素的各种源试剂，包括β-二酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基，全氟烷氧基和席夫碱，以及这些II族化合物的配合物，利用单齿或多齿配体，以提供与IIA族原子的额外配位，使得所得复合物具有增强的挥发性特征，并增强了对MOCVD应用的适用性。还公开了合成这种化合物和络合物的方法，包括制备具有增强的热稳定性特征的II族金属β-二酮化合物的方法。进一步公开了一种用于化学气相沉积的垂直倒置反应器，以及用于增强HTSC特性的各种加工金属氧化物膜的方法。

9. 发明授权

US08299286B2 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US08299286B2
公开(公告)日：2012-10-30
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Connie L. Gordon, legal representative , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
发明人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
IPC分类号： C07F7/00 , C23C18/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.
摘要翻译：提供了一种二酮醇盐金属化合物和一种源试剂组合物。所述二烷基醇盐金属化合物可以包括选自Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd，Cr，W ，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi，Lu，Th ，Pd，Pt，Ga，In，Au，Ag，Li，Na，K，Rb，Cs，Mo和Yb。该金属可以与至少一种醇盐配体和一种β-二酮配体络合。

10. 发明授权

US6110529A Method of forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在基板上形成金属膜的方法
公开(公告)号：US6110529A
公开(公告)日：2000-08-29
申请号：US484654
申请日：1995-06-07
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C07F3/00 , C07F5/00 , C07F7/00 , C07F9/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C07F3/003 , C07F19/005 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441
摘要： A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种在衬底上形成金属膜的方法，包括通过化学气相沉积从所述下式的金属有机络合物沉积所述金属膜：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮化合物，β-硫代酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧基化物和希夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

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