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1. 发明授权

US5550105A Superconducting compositions 失效
标题翻译：超导组合物
公开(公告)号：US5550105A
公开(公告)日：1996-08-27
申请号：US373223
申请日：1995-01-31
申请人： Peter P. Edwards , Shu-Fen Hu , Ru-Shi Liu , David A. Jefferson
发明人： Peter P. Edwards , Shu-Fen Hu , Ru-Shi Liu , David A. Jefferson
IPC分类号： C01G21/00 , C04B35/45 , H01L39/12 , H01B12/00
CPC分类号： C01G21/006 , C04B35/4504 , H01L39/126 , C01P2002/30 , C01P2002/34 , C01P2002/72 , C01P2002/76 , C01P2002/77 , C01P2002/78 , C01P2002/85 , Y10S505/778 , Y10S505/779 , Y10S505/783
摘要： Superconducting compositions characterized by the formula (Pb.sub.a A.sub.1-a)(Sr.sub.b Ba.sub.1-b).sub.2 (Ca.sub.c B.sub.1-c)Cu.sub.2 O.sub.7 wherein at least half the A atoms are Hg and the remainder, if any, are selected from one or more of Cd, Tl and Cu, B is selected from Y and the rare earths, a is from 0.3 to 0.7, b is from 0 to 1 and c is from 0.2 to 0.5 are disclosed. The superconductive compositions display zero-resistance temperatures up to about 80K.
摘要翻译： PCT No.PCT / GB93 / 01529 Sec。 371日期1995年1月31日 102（e）日期1995年1月31日PCT提交1993年7月21日PCT公布。出版物WO94 / 02947 日期1994年2月3日由式（PbaA1-a）（SrbBa1-b）2（CacB1-c）Cu2O7表征的超导组合物，其中至少一半的A原子是Hg，剩余部分（如果有的话）选自一个或多个的Cd，Tl和Cu，B选自Y和稀土，a为0.3〜0.7，b为0〜1，c为0.2〜0.5。超导组合物显示高达约80K的零电阻温度。

2. 发明申请

US20100035042A1 Fluorescence Material 有权
标题翻译：荧光材料
公开(公告)号：US20100035042A1
公开(公告)日：2010-02-11
申请号：US12367552
申请日：2009-02-09
申请人： Yu-Sheng Tang , Shu-Fen Hu , Ru-Shi Liu , Hung-Yuan Su , Cheng-Wen Tsai
发明人： Yu-Sheng Tang , Shu-Fen Hu , Ru-Shi Liu , Hung-Yuan Su , Cheng-Wen Tsai
IPC分类号： B32B5/02
CPC分类号： C09K11/7706 , H01L33/502 , H01L33/507 , H05B33/14 , Y10T428/25 , Y10T428/2982 , Y10T428/2991
摘要： The present invention fluorescence material has a particle diameter of the crystal area defined as dc, and the scope of dc is: 150 nm≧dc≧10 nm. The coat of the outside of the fluorescence material has one sheet of coating medium at least. Of course, there is at least a geometrical etching layer on the particle of the fluorescence material. The above-described structures will promote the extraction efficiency of light.
摘要翻译：本发明的荧光材料的晶体面积的直径定义为dc，dc的范围为：150nm> = dc> = 10nm。荧光材料外层的外层至少有一层涂料介质。当然，在荧光材料的颗粒上至少存在几何蚀刻层。上述结构将提高光的提取效率。

3. 发明授权

US08257829B2 Fluorescence material 有权
标题翻译：荧光材料
公开(公告)号：US08257829B2
公开(公告)日：2012-09-04
申请号：US12367552
申请日：2009-02-09
申请人： Yu-Sheng Tang , Shu-Fen Hu , Ru-Shi Liu , Hung-Yuan Su , Cheng-Wen Tsai
发明人： Yu-Sheng Tang , Shu-Fen Hu , Ru-Shi Liu , Hung-Yuan Su , Cheng-Wen Tsai
IPC分类号： B32B5/16
CPC分类号： C09K11/7706 , H01L33/502 , H01L33/507 , H05B33/14 , Y10T428/25 , Y10T428/2982 , Y10T428/2991
摘要： The present invention fluorescence material has a particle diameter of the crystal area defined as dc, and the scope of dc is: 150 nm≧dc≧10 nm. The coat of the outside of the fluorescence material has one sheet of coating medium at least. Of course, there is at least a geometrical etching layer on the particle of the fluorescence material. The above-described structures will promote the extraction efficiency of light.
摘要翻译：本发明的荧光材料的晶体面积的直径为dc，dc的范围为：150nm≥dc≥10nm。荧光材料外层的外层至少有一层涂料介质。当然，在荧光材料的颗粒上至少存在几何蚀刻层。上述结构将提高光的提取效率。

4. 发明授权

US08026659B2 Wavelength converting material and use of same 有权
标题翻译：波长转换材料及其用途
公开(公告)号：US08026659B2
公开(公告)日：2011-09-27
申请号：US12453014
申请日：2009-04-28
申请人： Yu-Sheng Tang , Ru-Shi Liu , Shu-Fen Hu , Chien-Yuan Wang
发明人： Yu-Sheng Tang , Ru-Shi Liu , Shu-Fen Hu , Chien-Yuan Wang
IPC分类号： H05B33/14
CPC分类号： C09K11/7734 , C01F7/002 , C09K11/7739 , Y02B20/181
摘要： This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula Mw-pAlyOzXq:Rp, wherein M is at least one element selected from the group of Be, Mg, Ca, Sr, Ba and Zn; X is at least one element selected from the group of F, Cl, Br, and I; R is one or more elements selected from the group of the transition metals and at least one element selected from the lanthanide series. Because the emitting wavelength of the metal haloaluminate compound phosphor is 550˜650 nm which is from the green to the red light spectrum, the white light mixed by the converted light of the metal haloaluminate phosphor and the blue light has better color rendering index. Besides, this invention also discloses the optoelectronic devices comprising the metal haloaluminate compound phosphor.
摘要翻译：本发明公开了一种波长转换材料。波长转换材料包括化学式为Mw-pAlyOzXq：Rp的卤化铝酸盐化合物荧光体，其中M为选自Be，Mg，Ca，Sr，Ba和Zn中的至少一种元素; X是选自F，Cl，Br和I的至少一种元素; R是选自过渡金属和至少一种选自镧系元素的元素中的一种或多种元素。由于金属卤化铝化合物荧光体的发光波长为从绿色到红色光谱的550〜650nm，所以通过金属卤化铝酸盐荧光体和蓝色光的转换光混合的白色光具有更好的显色指数。此外，本发明还公开了包含金属卤代铝酸盐化合物荧光体的光电器件。

5. 发明申请

US20090267488A1 Wavelength converting material and use of same 有权
标题翻译：波长转换材料及其用途
公开(公告)号：US20090267488A1
公开(公告)日：2009-10-29
申请号：US12453014
申请日：2009-04-28
申请人： Yu-Sheng Tang , Ru-Shi Liu , Shu-Fen Hu , Chien-Yuan Wang
发明人： Yu-Sheng Tang , Ru-Shi Liu , Shu-Fen Hu , Chien-Yuan Wang
IPC分类号： H01J1/62 , C09K11/55 , C09K11/61 , C01F7/50
CPC分类号： C09K11/7734 , C01F7/002 , C09K11/7739 , Y02B20/181
摘要： This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula Mw-pAlyOzXq:Rp, wherein M is at least one element selected from the group of Be, Mg, Ca, Sr, Ba and Zn; X is at least one element selected from the group of F, Cl, Br, and I; R is one or more elements selected from the group of the transition metals and at least one element selected from the lanthanide series. Because the emitting wavelength of the metal haloaluminate compound phosphor is 550˜650 nm which is from the green to the red light spectrum, the white light mixed by the converted light of the metal haloaluminate phosphor and the blue light has better color rendering index. Besides, this invention also discloses the optoelectronic devices comprising the metal haloaluminate compound phosphor.
摘要翻译：本发明公开了一种波长转换材料。波长转换材料包括化学式为Mw-pAlyOzXq：Rp的卤化铝酸盐化合物荧光体，其中M为选自Be，Mg，Ca，Sr，Ba和Zn中的至少一种元素; X是选自F，Cl，Br和I的至少一种元素; R是选自过渡金属和至少一种选自镧系元素的元素中的一种或多种元素。由于卤化铝酸盐化合物的荧光体的发光波长为从绿色到红色光谱的550〜650nm，由卤化铝酸盐荧光体和蓝色光的转换光混合的白色光具有更好的显色指数。此外，本发明还公开了包含金属卤代铝酸盐化合物荧光体的光电器件。

6. 发明授权

US06894352B2 Single-electron transistor and fabrication method thereof 失效
标题翻译：单电子晶体管及其制造方法
公开(公告)号：US06894352B2
公开(公告)日：2005-05-17
申请号：US10602890
申请日：2003-06-25
申请人： Shu-Fen Hu , Yung-Chun Wu , Wen-Tai Lu , Shiue-Shin Liu , Tiao-Yuan Huang , Tien-Sheng Chao
发明人： Shu-Fen Hu , Yung-Chun Wu , Wen-Tai Lu , Shiue-Shin Liu , Tiao-Yuan Huang , Tien-Sheng Chao
IPC分类号： H01L21/335 , H01L29/76 , H01L27/01
CPC分类号： B82Y10/00 , H01L29/66439 , H01L29/7613 , Y10S438/947 , Y10S977/937
摘要： A method for fabricating a single-electron transistor (SET). A one dimensional channel is formed between source and drain on a silicon-on-insulator substrate, and the separated polysilicon sidewall spacer gates are formed by electron-beam lithographically etching process in a self-aligned manner. Operation of the single-electron transistor with self-aligned polysilicon sidewall spacer gates is achieved by applying external bias to the self-aligned polysilicon sidewall spacer gates to form two potential barriers and a quantum dot capable of storage charges between the two potential barriers. A metal upper gate is finally formed and biased to induce a two-dimensional electron gas (2DEG) and control the energy level of the quantum well. Accordingly, the method of the invention comprises a combination of electron beam (E-beam) lithography with multilayer-aligned direct writing technology, oxidation, and wet etching to form a nanoscale one-dimensional channel between source and drain on a silicon-on-insulator substrate.
摘要翻译：一种用于制造单电子晶体管（SET）的方法。在绝缘体上硅衬底上的源极和漏极之间形成一维沟道，并且以自对准方式通过电子束光刻蚀工艺形成分离的多晶硅侧壁间隔栅极。通过将外部偏置施加到自对准多晶硅侧壁间隔栅上来形成具有自对准多晶硅侧壁间隔栅极的单电子晶体管的操作，以形成两个势垒和能够在两个势垒之间存储电荷的量子点。金属上栅极最终形成并偏置以诱导二维电子气（2DEG）并控制量子阱的能级。因此，本发明的方法包括电子束（E-beam）光刻与多层排列直接写入技术的组合，氧化和湿蚀刻，以在硅 - 硅上形成源极和漏极之间的纳米级一维沟道绝缘体基板。

7. 发明申请

US20050139819A1 Process for fabricating nanoelectronic device by intermittent exposure 审中-公开
标题翻译：通过间歇曝光制造纳米电子器件的工艺
公开(公告)号：US20050139819A1
公开(公告)日：2005-06-30
申请号：US10998603
申请日：2004-11-30
申请人： Gwo-Jen Hwang , Yi-Pin Fang , Ya-Chang Chou , Shu-Fen Hu
发明人： Gwo-Jen Hwang , Yi-Pin Fang , Ya-Chang Chou , Shu-Fen Hu
IPC分类号： H01L21/335 , H01L29/76 , H01L49/00 , H01L31/062
CPC分类号： B82Y10/00 , H01L29/66439 , H01L29/7613 , H01L49/006
摘要： A process for fabricating a nanoelectronic device by intermittent exposure is disclosed, consisting the steps of: providing a substrate on which a conductor or semiconductor thin film having a photoresist layer coated is formed; exposing the photoresist layer by lithography with a lithographic pattern which includes at least one noncontinuous quantum dot, a first electrode and a second electrode, in which the noncontinuous quantum dots are linearly arranged and sandwiched between the first electrode and the second electrode; and etching the thin film to form a quantum island group of linked quantum islands having both ends connected to the first electrode and the second electrode respectively so that the width of the quantum island is larger than the width of tunnel barriers positioned on the both sides of the quantum islands. A nanoelectronic device constructed according to the process is also disclosed.
摘要翻译：公开了一种通过间歇曝光制造纳米电子器件的方法，包括以下步骤：提供其上形成具有涂覆有光致抗蚀剂层的导体或半导体薄膜的基板; 通过光刻图案曝光光致抗蚀剂层，该平版印刷图案包括至少一个非连续量子点，第一电极和第二电极，其中非连续量子点线性排列并夹在第一电极和第二电极之间; 并且蚀刻该薄膜以形成一个连接的量子岛的量子岛群，其两端分别连接到第一电极和第二电极，使得量子岛的宽度大于位于第二电极两侧的隧道屏障的宽度量子岛。还公开了根据该方法构造的纳米电子器件。

8. 发明申请

US20090145481A1 NANO-OPTOELECTRONIC DEVICES 审中-公开
标题翻译：纳米光电器件
公开(公告)号：US20090145481A1
公开(公告)日：2009-06-11
申请号：US12144542
申请日：2008-06-23
申请人： Shu-Fen Hu , Ting-Wei Liao , Chao-Yuan Huang
发明人： Shu-Fen Hu , Ting-Wei Liao , Chao-Yuan Huang
IPC分类号： H01L31/00
CPC分类号： H01L31/0352 , B82Y30/00 , H01L31/101
摘要： Optoelectronic devices with multiple nano-scale quantum dots detecting photons are presented. A nano-optoelectronic device includes a semiconductor substrate, an insulation layer on the semiconductor substrate, and a nano-optoelectronic structure on the insulation layer. The nano-optoelectronic structure includes a positive semiconductor, a negative semiconductor, and a plurality of quantum dots disposed therebetween. A first electrode connects the negative semiconductor, and a second electrode connects the positive semiconductor.
摘要翻译：提出了具有多个纳米量子点检测光子的光电器件。纳米光电子器件包括半导体衬底，半导体衬底上的绝缘层和绝缘层上的纳米光电结构。纳米光电子结构包括正半导体，负半导体和设置在其间的多个量子点。第一电极连接负极半导体，第二电极连接正半导体。

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