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1. 发明申请

US20120021311A1 Hydrogen Storage Material 失效
标题翻译：储氢材料
公开(公告)号：US20120021311A1
公开(公告)日：2012-01-26
申请号：US12672594
申请日：2008-08-08
申请人： William I.F. David , Marco Sommariva , Peter P. Edwards , Simon R. Johnson , Martin Owen Jones , Elizabeth Anne Nickels
发明人： William I.F. David , Marco Sommariva , Peter P. Edwards , Simon R. Johnson , Martin Owen Jones , Elizabeth Anne Nickels
IPC分类号： H01M8/10 , H01M8/06 , H01M10/0562 , H01M8/04 , C01B6/06 , H01M8/00
CPC分类号： C01B6/246 , C01B3/0031 , C01B6/21 , H01M4/383 , H01M8/04216 , Y02E60/327
摘要： Novel mixed alkali metal borohydrides are disclosed which can be used as hydrogen storage materials. Processes for producing the mixed alkali metal borohydrides and their use in hydrogen storage devices are also described.
摘要翻译：公开了可用作储氢材料的新型混合碱金属硼氢化物。还描述了用于制备混合的碱金属硼氢化物的方法及其在储氢装置中的用途。

2. 发明授权

US08859104B2 Transparent conducting oxides 有权
标题翻译：透明导电氧化物
公开(公告)号：US08859104B2
公开(公告)日：2014-10-14
申请号：US12920083
申请日：2009-02-26
申请人： Peter P. Edwards , Martin Owen Jones , Malek Moshari Al-Mamouri , John Stuart Abell
发明人： Peter P. Edwards , Martin Owen Jones , Malek Moshari Al-Mamouri , John Stuart Abell
IPC分类号： B32B3/30 , B32B3/10 , B32B9/00 , C23C14/28 , C09K19/00 , B05D3/10 , B32B17/06 , H01B1/02 , C09K11/61 , C03C17/245 , H01B1/08 , C23C14/08 , H01L33/42 , H01L51/52
CPC分类号： H01B1/08 , C03C17/245 , C03C2217/213 , C03C2217/216 , C03C2217/23 , C03C2217/24 , C03C2217/241 , C03C2217/242 , C03C2217/944 , C23C14/086 , C23C14/28 , H01B5/14 , H01B13/003 , H01L33/42 , H01L51/5206 , H01L51/5215 , Y10T428/10 , Y10T428/1055 , Y10T428/24 , Y10T428/24479
摘要： The invention provides a transparent conducting film which comprises a compound of formula (I): Zn1-x[M]xO1-y[X]y(I) wherein: x is greater than 0 and less than or equal to 0.25; y is from 0 to 0.1; [X] is at least one dopant element which is a halogen; and [M] is: (a) a dopant element which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr; or (b) a combination of two or more different dopant elements, at least one of which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
摘要翻译：本发明提供一种透明导电膜，其包含式（I）化合物：Zn1-x [M] xO1-y [X] y（I）其中：x大于0且小于或等于0.25; y为0〜0.1; [X]是卤素中的至少一种掺杂剂元素; 和[M]是：（a）掺杂元素，其选自：除了碳以外的第14族元素; 氧化态为+4的镧系元素; 和具有+4并且不是Ti或Zr的氧化态的过渡金属; 或（b）两种或更多种不同掺杂元素的组合，其中至少一种选自：除碳以外的第14族元素; 氧化态为+4的镧系元素; 和具有+4的氧化态且不同于Ti或Zr的过渡金属。本发明还提供了包含本发明的膜的涂层，用于生产这种膜和涂层的方法以及膜和涂层的各种用途。

3. 发明授权

US08431279B2 Hydrogen storage material 失效
标题翻译：储氢材料
公开(公告)号：US08431279B2
公开(公告)日：2013-04-30
申请号：US12672594
申请日：2008-08-08
申请人： William I. F. David , Marco Sommariva , Peter P. Edwards , Simon R. Johnson , Martin Owen Jones , Elizabeth Anne Nickels
发明人： William I. F. David , Marco Sommariva , Peter P. Edwards , Simon R. Johnson , Martin Owen Jones , Elizabeth Anne Nickels
IPC分类号： H01M8/10 , H01M8/06 , H01M10/0562 , H01M8/04 , H01M8/00 , C01B6/06
CPC分类号： C01B6/246 , C01B3/0031 , C01B6/21 , H01M4/383 , H01M8/04216 , Y02E60/327
摘要： Novel mixed alkali metal borohydrides are disclosed which can be used as hydrogen storage materials.
摘要翻译：公开了可用作储氢材料的新型混合碱金属硼氢化物。

4. 发明授权

US5550105A Superconducting compositions 失效
标题翻译：超导组合物
公开(公告)号：US5550105A
公开(公告)日：1996-08-27
申请号：US373223
申请日：1995-01-31
申请人： Peter P. Edwards , Shu-Fen Hu , Ru-Shi Liu , David A. Jefferson
发明人： Peter P. Edwards , Shu-Fen Hu , Ru-Shi Liu , David A. Jefferson
IPC分类号： C01G21/00 , C04B35/45 , H01L39/12 , H01B12/00
CPC分类号： C01G21/006 , C04B35/4504 , H01L39/126 , C01P2002/30 , C01P2002/34 , C01P2002/72 , C01P2002/76 , C01P2002/77 , C01P2002/78 , C01P2002/85 , Y10S505/778 , Y10S505/779 , Y10S505/783
摘要： Superconducting compositions characterized by the formula (Pb.sub.a A.sub.1-a)(Sr.sub.b Ba.sub.1-b).sub.2 (Ca.sub.c B.sub.1-c)Cu.sub.2 O.sub.7 wherein at least half the A atoms are Hg and the remainder, if any, are selected from one or more of Cd, Tl and Cu, B is selected from Y and the rare earths, a is from 0.3 to 0.7, b is from 0 to 1 and c is from 0.2 to 0.5 are disclosed. The superconductive compositions display zero-resistance temperatures up to about 80K.
摘要翻译： PCT No.PCT / GB93 / 01529 Sec。 371日期1995年1月31日 102（e）日期1995年1月31日PCT提交1993年7月21日PCT公布。出版物WO94 / 02947 日期1994年2月3日由式（PbaA1-a）（SrbBa1-b）2（CacB1-c）Cu2O7表征的超导组合物，其中至少一半的A原子是Hg，剩余部分（如果有的话）选自一个或多个的Cd，Tl和Cu，B选自Y和稀土，a为0.3〜0.7，b为0〜1，c为0.2〜0.5。超导组合物显示高达约80K的零电阻温度。

5. 发明授权

US09236157B2 Transparent electrically conducting oxides 有权
标题翻译：透明导电氧化物
公开(公告)号：US09236157B2
公开(公告)日：2016-01-12
申请号：US13393822
申请日：2010-09-02
申请人： Vladimir L. Kuznetsov , Peter P. Edwards
发明人： Vladimir L. Kuznetsov , Peter P. Edwards
IPC分类号： B05D5/12 , H01B1/08 , C23C18/08 , C23C18/12 , B05D3/10
CPC分类号： H01B1/08 , B05D3/10 , B05D5/12 , C23C18/08 , C23C18/1208 , C23C18/1216 , C23C18/1233 , C23C18/1245 , C23C18/1254 , C23C18/1258 , C23C18/1291 , C23C18/1295 , Y10T428/24479 , Y10T428/24628 , Y10T428/24802
摘要： The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m2. The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m2. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
摘要翻译：本发明提供一种制造透明导电膜的方法，该膜包括掺杂的氧化锌，其中掺杂剂包括Si，该方法包括：将一种作为液体组合物或凝胶组合物的组合物设置在基材上，其中组合物包含Zn 和Si; 并加热所述衬底。本发明还提供了可通过本发明方法获得的透明导电膜，其包括透明导电膜，其包含掺杂的氧化锌，其中所述掺杂剂包含Si，并且其中所述膜覆盖等于或大于0.01m2的表面积。本发明还提供一种涂覆的基底，该基底包括表面，该表面涂覆有透明导电膜，其中所述膜包括掺杂的氧化锌，其中所述掺杂剂包含Si，并且其中所述表面的面积涂覆有所述膜等于或大于0.01m2。本发明还提供了包含本发明的膜的涂层，用于生产这种膜和涂层的方法以及膜和涂层的各种用途。

6. 发明申请

US20110135848A1 TRANSPARENT CONDUCTING OXIDES 有权
标题翻译：透明导电氧化物
公开(公告)号：US20110135848A1
公开(公告)日：2011-06-09
申请号：US12920083
申请日：2009-02-26
申请人： Peter P. Edwards , Martin Owen Jones , Malek Moshari Al-Mamouri , John Stuart Abell
发明人： Peter P. Edwards , Martin Owen Jones , Malek Moshari Al-Mamouri , John Stuart Abell
IPC分类号： B32B3/30 , B32B3/10 , C23C14/28 , B05D3/10 , B32B9/00 , C09K19/00 , B32B17/06 , H01B1/02 , C09K11/61
CPC分类号： H01B1/08 , C03C17/245 , C03C2217/213 , C03C2217/216 , C03C2217/23 , C03C2217/24 , C03C2217/241 , C03C2217/242 , C03C2217/944 , C23C14/086 , C23C14/28 , H01B5/14 , H01B13/003 , H01L33/42 , H01L51/5206 , H01L51/5215 , Y10T428/10 , Y10T428/1055 , Y10T428/24 , Y10T428/24479
摘要： The invention provides a transparent conducting film which comprises a compound of formula (I): Zn1-x[M]xO1-y[X]y(I) wherein: x is greater than 0 and less than or equal to 0.25; y is from 0 to 0.1; [X] is at least one dopant element which is a halogen; and [M] is: (a) a dopant element which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr; or (b) a combination of two or more different dopant elements, at least one of which is selected from: a group 14 element other than carbon; a lanthanide element which has an oxidation state of +4; and a transition metal which has an oxidation state of +4 and which is other than Ti or Zr. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
摘要翻译：本发明提供一种透明导电膜，其包含式（I）化合物：Zn1-x [M] xO1-y [X] y（I）其中：x大于0且小于或等于0.25; y为0〜0.1; [X]是卤素中的至少一种掺杂剂元素; 和[M]是：（a）掺杂元素，其选自：除了碳以外的第14族元素; 氧化态为+4的镧系元素; 和具有+4并且不是Ti或Zr的氧化态的过渡金属; 或（b）两种或更多种不同掺杂元素的组合，其中至少一种选自：除碳以外的第14族元素; 氧化态为+4的镧系元素; 和具有+4的氧化态且不同于Ti或Zr的过渡金属。本发明还提供了包含本发明的膜的涂层，用于生产这种膜和涂层的方法以及膜和涂层的各种用途。

7. 发明授权

US5217949A Superconductors 失效
标题翻译：超级电容
公开(公告)号：US5217949A
公开(公告)日：1993-06-08
申请号：US685637
申请日：1991-04-16
申请人： Ru-Shi Liu , Robert Janes , Wuzong Zhou , Peter P. Edwards
发明人： Ru-Shi Liu , Robert Janes , Wuzong Zhou , Peter P. Edwards
IPC分类号： C04B35/45 , H01L39/12
CPC分类号： C04B35/4504 , C04B35/4512 , H01L39/126 , Y10S505/776 , Y10S505/779 , Y10S505/781 , Y10S505/783
摘要： Superconducting materials of the (T1,In)-Sr-Ca-Cu-O system-type are modified to raise their critical tempertures by substituting an element M for part of the Tl/In and optionally substituting Y or a rare earth element for some of the Ca.M is a transition metal with valency electrons in d orbitals in its normal state and having accessible tri-and/or tetra-valent states, that is V, Ti, Cr, Zr, Nb, Hf or Ta (which are preferred) Mn, Fe, Co, Ni, Mo, Rh, W, Os, Ir, Re or Ru.
摘要翻译：（T1，In）-Sr-Ca-Cu-O体系型的超导材料通过用元素M代替Tl / In的一部分进行改性以提高其临界温度，并且任选地用Y或稀土元素代替一些的Ca. M是具有正常状态的d轨道中的价电子的过渡金属，具有可接近的三价和/或四价状态，即V，Ti，Cr，Zr，Nb，Hf或Ta（优选的）Mn， Fe，Co，Ni，Mo，Rh，W，Os，Ir，Re或Ru。

8. 发明申请

US20120225250A1 TRANSPARENT ELECTRICALLY CONDUCTING OXIDES 有权
标题翻译：透明电导体氧化物
公开(公告)号：US20120225250A1
公开(公告)日：2012-09-06
申请号：US13393822
申请日：2010-09-02
申请人： Vladimir L. Kuznetsov , Peter P. Edwards
发明人： Vladimir L. Kuznetsov , Peter P. Edwards
IPC分类号： H01B1/08 , B32B3/10 , B32B33/00 , H01B1/04 , B05D5/12 , B05D3/02 , B05D3/10 , B32B3/02 , B32B17/06
CPC分类号： H01B1/08 , B05D3/10 , B05D5/12 , C23C18/08 , C23C18/1208 , C23C18/1216 , C23C18/1233 , C23C18/1245 , C23C18/1254 , C23C18/1258 , C23C18/1291 , C23C18/1295 , Y10T428/24479 , Y10T428/24628 , Y10T428/24802
摘要： The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m2. The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m2. The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.
摘要翻译：本发明提供一种制造透明导电膜的方法，该膜包括掺杂的氧化锌，其中掺杂剂包括Si，该方法包括：将一种作为液体组合物或凝胶组合物的组合物设置在基材上，其中组合物包含Zn 和Si; 并加热所述衬底。本发明还提供了可通过本发明方法获得的透明导电膜，其包括透明导电膜，其包含掺杂的氧化锌，其中所述掺杂剂包含Si，并且其中所述膜覆盖等于或大于0.01m2的表面积。本发明还提供一种涂覆的基底，该基底包括表面，该表面涂覆有透明导电膜，其中所述膜包括掺杂的氧化锌，其中所述掺杂剂包含Si，并且其中所述表面的面积涂覆有所述膜等于或大于0.01m2。本发明还提供了包含本发明的膜的涂层，用于生产这种膜和涂层的方法以及膜和涂层的各种用途。

9. 发明授权

US08168342B2 Method of producing (NH2(R2)) and/or hydrogen 有权
标题翻译：制备（NH 2（R 2））和/或氢的方法
公开(公告)号：US08168342B2
公开(公告)日：2012-05-01
申请号：US12373246
申请日：2007-07-09
申请人： Martin Owen Jones , Simon R. Johnson , Peter P. Edwards , William I. f David
发明人： Martin Owen Jones , Simon R. Johnson , Peter P. Edwards , William I. f David
IPC分类号： H01M8/06 , C01B3/02 , C01B3/04 , C01B35/14 , C01C1/02 , C01C1/08 , C07C211/02 , C07C211/16
CPC分类号： C01B3/065 , C01B6/21 , C01C1/006 , Y02E60/362 , Y02E60/364 , Y02P20/129
摘要： A method of producing NH2(R2), the method comprising reacting a metal hydride with a compound having the general formula: M1X(BH4)y(NH2(R2))n wherein M1 comprises one or more of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, La, Al, Ga and Sc; 0
摘要翻译：一种制备NH 2（R 2）的方法，该方法包括使金属氢化物与具有通式M1X（BH4）y（NH2（R2））n的化合物反应，其中M1包含一个或多个Li，Na，K，Rb ，Cs，Be，Mg，Ca，Sr，Ba，La，Al，Ga和Sc; 0

10. 发明申请

US20090197130A1 METHOD OF PRODUCING (NH2(R2)) AND/OR HYDROGEN 有权
标题翻译：生产（NH 2（R 2））和/或氢的方法
公开(公告)号：US20090197130A1
公开(公告)日：2009-08-06
申请号：US12373246
申请日：2007-07-09
申请人： Martin Owen Jones , Simon R Johnson , Peter P Edwards , William I.F. David
发明人： Martin Owen Jones , Simon R Johnson , Peter P Edwards , William I.F. David
IPC分类号： H01M8/04 , C01C1/02 , C01B3/02 , H01M8/18 , B01J19/24
CPC分类号： C01B3/065 , C01B6/21 , C01C1/006 , Y02E60/362 , Y02E60/364 , Y02P20/129
摘要： A method of producing NH2 (R2), the method comprising reacting a metal hydride with a compound having the general formula: M1x (BH4)y (NH2 (R2))n wherein M1 comprises one or more of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, La, Al, Ga and Sc; 0
摘要翻译：一种制备NH 2（R 2）的方法，该方法包括使金属氢化物与具有通式M1x（BH4）y（NH2（R2））n的化合物反应，其中M1包含一个或多个Li，Na，K，Rb ，Cs，Be，Mg，Ca，Sr，Ba，La，Al，Ga和Sc; 0

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