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    • 4. 发明授权
    • Phase lock loop circuits
    • 锁相环电路
    • US08169265B2
    • 2012-05-01
    • US12431842
    • 2009-04-29
    • Shiue-Shin Liu
    • Shiue-Shin Liu
    • H03L7/00
    • H03L7/0893H03L7/093H03L7/099H03L2207/06
    • A phase lock loop circuit is provided. A phase frequency detector detects a phase difference between a feedback signal and a reference signal, and generates a phase error signal in response to the detected phase difference. A charge pump consists of at least one core device and outputs a current signal based on the phase error signal. An active loop filter receives and transfers the current signal into a control signal. Operating voltage of the active loop filter is higher than operating voltage of the charge pump. A controlled oscillator receives the control signal and generates an output signal in response to the control signal. A feedback divider receives the output signal to generate the feedback signal.
    • 提供锁相环电路。 相位频率检测器检测反馈信号和参考信号之间的相位差,并且响应于检测到的相位差产生相位误差信号。 电荷泵由至少一个核心装置组成,并根据相位误差信号输出电流信号。 有源环路滤波器接收并将当前信号传送到控制信号中。 有源环路滤波器的工作电压高于电荷泵的工作电压。 控制振荡器接收控制信号并响应于控制信号产生输出信号。 反馈分频器接收输出信号以产生反馈信号。
    • 5. 发明申请
    • BIAS CIRCUIT AND PHASE-LOCKED LOOP CIRCUIT USING THE SAME
    • 使用相同的偏置电路和相位锁定环路
    • US20110063002A1
    • 2011-03-17
    • US12757043
    • 2010-04-09
    • Shiue-Shin Liu
    • Shiue-Shin Liu
    • H03L7/08G05F3/02
    • G05F3/242H03L7/0995
    • A bias circuit for generating an output bias current includes a first transistor, a passive component, a second transistor, and a bias current generator. The first transistor has a first node coupled to a first reference voltage, a second node, and a control node. The passive component is coupled between the first reference voltage and the control node of the first transistor. The second transistor has a first node coupled to the control node of the first transistor, a control node coupled to the second node of the first transistor, and a second node for providing the output bias current according to a current passing through the passive component. The bias current generator is coupled to the second node of the first transistor, and implemented for providing the first transistor with a bias current.
    • 用于产生输出偏置电流的偏置电路包括第一晶体管,无源部件,第二晶体管和偏置电流发生器。 第一晶体管具有耦合到第一参考电压的第一节点,第二节点和控制节点。 无源部件耦合在第一参考电压和第一晶体管的控制节点之间。 第二晶体管具有耦合到第一晶体管的控制节点的第一节点,耦合到第一晶体管的第二节点的控制节点和用于根据通过无源部件的电流提供输出偏置电流的第二节点。 偏置电流发生器耦合到第一晶体管的第二节点,并且被实现用于向第一晶体管提供偏置电流。
    • 6. 发明申请
    • FINE DELAY ADJUSTMENT
    • 精细延迟调整
    • US20100308882A1
    • 2010-12-09
    • US12477410
    • 2009-06-03
    • Shiue-shin Liu
    • Shiue-shin Liu
    • H03H11/26
    • H03K5/131H03K2005/00045H03K2005/00267
    • A fine delay adjustment device is disclosed. The fine delay adjustment device in accordance with the present invention has at least one delay buffer having an output impedance; a capacitor connected to the delay buffer in series; and a variable resistive unit connected with the capacitor in series. The variable resistive unit has a variable resistance of the same order as the output impedance of the delay buffer. The fine delay adjustment of the present invention is capable of providing sub-ps adjustment steps. In the mean while, an increment due to the fine delay adjustment added to delay time is limited.
    • 公开了一种精细的延迟调整装置。 根据本发明的精细延迟调整装置具有至少一个具有输出阻抗的延迟缓冲器; 串联连接到延迟缓冲器的电容器; 以及与电容器串联连接的可变电阻单元。 可变电阻单元具有与延迟缓冲器的输出阻抗相同顺序的可变电阻。 本发明的精细延迟调整能够提供子ps调整步骤。 平均而言,由于延迟时间调整所引起的微小延迟时间的增加受到限制。
    • 10. 发明授权
    • Single-electron transistor and fabrication method thereof
    • 单电子晶体管及其制造方法
    • US06894352B2
    • 2005-05-17
    • US10602890
    • 2003-06-25
    • Shu-Fen HuYung-Chun WuWen-Tai LuShiue-Shin LiuTiao-Yuan HuangTien-Sheng Chao
    • Shu-Fen HuYung-Chun WuWen-Tai LuShiue-Shin LiuTiao-Yuan HuangTien-Sheng Chao
    • H01L21/335H01L29/76H01L27/01
    • B82Y10/00H01L29/66439H01L29/7613Y10S438/947Y10S977/937
    • A method for fabricating a single-electron transistor (SET). A one dimensional channel is formed between source and drain on a silicon-on-insulator substrate, and the separated polysilicon sidewall spacer gates are formed by electron-beam lithographically etching process in a self-aligned manner. Operation of the single-electron transistor with self-aligned polysilicon sidewall spacer gates is achieved by applying external bias to the self-aligned polysilicon sidewall spacer gates to form two potential barriers and a quantum dot capable of storage charges between the two potential barriers. A metal upper gate is finally formed and biased to induce a two-dimensional electron gas (2DEG) and control the energy level of the quantum well. Accordingly, the method of the invention comprises a combination of electron beam (E-beam) lithography with multilayer-aligned direct writing technology, oxidation, and wet etching to form a nanoscale one-dimensional channel between source and drain on a silicon-on-insulator substrate.
    • 一种用于制造单电子晶体管(SET)的方法。 在绝缘体上硅衬底上的源极和漏极之间形成一维沟道,并且以自对准方式通过电子束光刻蚀工艺形成分离的多晶硅侧壁间隔栅极。 通过将外部偏置施加到自对准多晶硅侧壁间隔栅上来形成具有自对准多晶硅侧壁间隔栅极的单电子晶体管的操作,以形成两个势垒和能够在两个势垒之间存储电荷的量子点。 金属上栅极最终形成并偏置以诱导二维电子气(2DEG)并控制量子阱的能级。 因此,本发明的方法包括电子束(E-beam)光刻与多层排列直接写入技术的组合,氧化和湿蚀刻,以在硅 - 硅上形成源极和漏极之间的纳米级一维沟道 绝缘体基板。