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1. 发明申请

US20120083102A1 Integrated Shadow Mask/Carrier for Pattern Ion Implantation 失效
标题翻译：用于图案离子植入的集成阴影掩模/载体
公开(公告)号：US20120083102A1
公开(公告)日：2012-04-05
申请号：US12895927
申请日：2010-10-01
申请人： Nicholas Bateman , Kevin Daniels , Atul Gupta , Russell Low , Benjamin Riordon , Robert Mitchell , Steven Anella
发明人： Nicholas Bateman , Kevin Daniels , Atul Gupta , Russell Low , Benjamin Riordon , Robert Mitchell , Steven Anella
IPC分类号： H01L21/71 , H01J37/20
CPC分类号： H01L21/677 , H01J37/3171 , H01J2237/31711 , H01L21/68735 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。此外，公开了改进的基板载体。通常用于承载衬底的载体被修改为用作图案化植入物的荫罩。在一些实施例中，可以使用载体创建各种图案，使得可以通过用载体改变载体或位置来在基板上执行不同的工艺步骤。此外，由于基板与载体的对准是关键的，所以载体可以包含对准特征以确保基板正确地定位在载体上。在一些实施例中，使用重力来将衬底保持在载体上，因此，引导离子使得离子束朝向载体的底侧向上移动。

2. 发明授权

US08216923B2 Integrated shadow mask/carrier for patterned ion implantation 失效
标题翻译：用于图案化离子注入的集成阴影掩模/载体
公开(公告)号：US08216923B2
公开(公告)日：2012-07-10
申请号：US12895927
申请日：2010-10-01
申请人： Nicholas Bateman , Kevin Daniels , Atul Gupta , Russell Low , Benjamin Riordon , Robert Mitchell , Steven Anella
发明人： Nicholas Bateman , Kevin Daniels , Atul Gupta , Russell Low , Benjamin Riordon , Robert Mitchell , Steven Anella
IPC分类号： H01L21/425
CPC分类号： H01L21/677 , H01J37/3171 , H01J2237/31711 , H01L21/68735 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。此外，公开了改进的基板载体。通常用于承载衬底的载体被修改为用作图案化植入物的荫罩。在一些实施例中，可以使用载体创建各种图案，使得可以通过用载体改变载体或位置来在基板上执行不同的工艺步骤。此外，由于基板与载体的对准是关键的，所以载体可以包含对准特征以确保基板正确地定位在载体上。在一些实施例中，使用重力来将衬底保持在载体上，因此，引导离子使得离子束朝向载体的底侧向上移动。

3. 发明申请

US20120244692A1 INTEGRATED SHADOW MASK/CARRIER FOR PATTERN ION IMPLANTATION 审中-公开
标题翻译：集成阴影掩模/载体为模式离子植入
公开(公告)号：US20120244692A1
公开(公告)日：2012-09-27
申请号：US13489031
申请日：2012-06-05
申请人： Nicholas Bateman , Kevin Daniels , Atul Gupta , Russell Low , Benjamin Riordon , Robert Mitchell , Steven Anella
发明人： Nicholas Bateman , Kevin Daniels , Atul Gupta , Russell Low , Benjamin Riordon , Robert Mitchell , Steven Anella
IPC分类号： H01L21/266
CPC分类号： H01L21/677 , H01J37/3171 , H01J2237/31711 , H01L21/68735 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。此外，公开了改进的基板载体。通常用于承载衬底的载体被修改为用作图案化植入物的荫罩。在一些实施例中，可以使用载体创建各种图案，使得可以通过用载体改变载体或位置来在基板上执行不同的工艺步骤。此外，由于基板与载体的对准是关键的，所以载体可以包含对准特征以确保基板正确地定位在载体上。在一些实施例中，使用重力来将衬底保持在载体上，因此，引导离子使得离子束朝向载体的底侧向上移动。

4. 发明授权

US08084293B2 Continuously optimized solar cell metallization design through feed-forward process 有权
标题翻译：通过前馈过程不断优化太阳能电池金属化设计
公开(公告)号：US08084293B2
公开(公告)日：2011-12-27
申请号：US12754712
申请日：2010-04-06
申请人： Benjamin Riordon , Russell Low , Atul Gupta , William Weaver
发明人： Benjamin Riordon , Russell Low , Atul Gupta , William Weaver
IPC分类号： H01L21/00
CPC分类号： H01L31/022425 , H01L21/266 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。使用掩模或不使用光刻或掩模在衬底上产生掺杂区域。植入完成后，使用视觉识别来确定植入的确切区域。然后可以通过随后的工艺步骤来使用该信息来对合适的金属化层进行包装并提供对准信息。这些技术也可用于其他离子注入机应用。在另一方面，产生点图案选择性发射体，并且使用成像来确定合适的金属化层。

5. 发明申请

US20110244625A1 Continuously Optimized Solar Cell Metallization Design through Feed-Forward Process 有权
标题翻译：通过前馈过程持续优化太阳能电池金属化设计
公开(公告)号：US20110244625A1
公开(公告)日：2011-10-06
申请号：US12754712
申请日：2010-04-06
申请人： Benjamin Riordon , Russell Low , Atul Gupta , William Weaver
发明人： Benjamin Riordon , Russell Low , Atul Gupta , William Weaver
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L21/266 , H01L31/022433 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
摘要翻译：公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。使用掩模或不使用光刻或掩模在衬底上产生掺杂区域。植入完成后，使用视觉识别来确定植入的确切区域。然后可以通过随后的工艺步骤来使用该信息来对合适的金属化层进行包装并提供对准信息。这些技术也可用于其他离子注入机应用。在另一方面，产生点图案选择性发射体，并且使用成像来确定合适的金属化层。

6. 发明申请

US20120183199A1 SUBSTRATE IDENTIFICATION AND TRACKING THROUGH SURFACE REFLECTANCE 有权
标题翻译：通过表面反射识别和跟踪基板
公开(公告)号：US20120183199A1
公开(公告)日：2012-07-19
申请号：US13006545
申请日：2011-01-14
申请人： Benjamin Riordon , Russell Low
发明人： Benjamin Riordon , Russell Low
IPC分类号： G06K9/00
CPC分类号： H01L31/0682 , G06K9/00577 , H01L31/1876 , Y02E10/547 , Y02P70/521
摘要： A method of identifying individual silicon substrates, and particularly solar cells, is disclosed. Every solar cell possesses a unique set of optical properties. The method identifies these properties and stores them in a database, where they can be associated to a particular solar cell. Unlike conventional tracking techniques, the present method requires no dedicated space on the surface of the silicon substrate. This method allows substrates to be tracked through the manufacturing process, as well as throughout the life of the substrate.
摘要翻译：公开了一种识别单个硅衬底，特别是太阳能电池的方法。每个太阳能电池都具有独特的光学特性。该方法识别这些属性并将其存储在数据库中，并将其与特定的太阳能电池相关联。与传统跟踪技术不同，本方法不需要硅衬底表面上的专用空间。该方法允许通过制造过程以及在基板的整个寿命期间跟踪基板。

7. 发明申请

US20110124186A1 APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES 有权
标题翻译：用于控制工件的装置和方法
公开(公告)号：US20110124186A1
公开(公告)日：2011-05-26
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/265 , G21K5/10
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译：等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

8. 发明授权

US07576337B2 Power supply for an ion implantation system 有权
标题翻译：离子注入系统的电源
公开(公告)号：US07576337B2
公开(公告)日：2009-08-18
申请号：US11620595
申请日：2007-01-05
申请人： Piotr Lubicki , Russell Low , Steve Krause , Eric Hermanson
发明人： Piotr Lubicki , Russell Low , Steve Krause , Eric Hermanson
IPC分类号： H01J37/08
CPC分类号： H02M7/103
摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.
摘要翻译：一种用于离子注入系统的电源系统。在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

9. 发明申请

US20080072413A1 Indirectly heated cathode clamp system and method 有权
标题翻译：间接加热阴极夹系统及方法
公开(公告)号：US20080072413A1
公开(公告)日：2008-03-27
申请号：US11194260
申请日：2005-08-01
申请人： Stephen Krause , Eric R. Cobb , Russell Low
发明人： Stephen Krause , Eric R. Cobb , Russell Low
IPC分类号： B23Q3/18 , H01J9/18 , H05H1/24
CPC分类号： H01J9/18 , Y10T29/49895 , Y10T29/49899 , Y10T29/53909
摘要： A method and clamp system for use on an ion implanter system for aligning a cathode and filament relative to one another in-situ are disclosed. The invention includes a clamp system having a clamp including a first clamp member separably coupled to a second clamp member, and an opening to a mount portion of one of the cathode and the filament in at least one of the clamp members. Each clamp member includes a surface to engage a mount portion of one of the cathode and the filament. The opening is adapted to receive a positioning tool to position the cathode and the filament relative to one another by moving the mount portion when the clamp is released. The mount portion may include a tool receiving member to facilitate accurate positioning.
摘要翻译：公开了一种用于离子注入机系统的方法和夹紧系统，用于将阴极和细丝相对于彼此原位排列。本发明包括具有夹具的夹具系统，该夹具包括可分离地联接到第二夹紧构件的第一夹紧构件以及至少一个夹紧构件中的阴极和细丝之一的安装部分的开口。每个夹持构件包括与阴极和细丝之一的安装部分接合的表面。开口适于接收定位工具以通过在夹具被释放时移动安装部分来相对于彼此定位阴极和灯丝。安装部分可以包括工具接收构件以便于精确定位。

10. 发明申请

US20060219954A1 Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control 有权
标题翻译：使用快速离子束控制的固定射束离子注入过程中毛刺恢复的方法和装置
公开(公告)号：US20060219954A1
公开(公告)日：2006-10-05
申请号：US11241894
申请日：2005-09-30
申请人： Russell Low , Joseph Olson , David Timberlake , James McLane , Mark Saunders , James Cummings , Thomas Callahan , Jonathan England
发明人： Russell Low , Joseph Olson , David Timberlake , James McLane , Mark Saunders , James Cummings , Thomas Callahan , Jonathan England
IPC分类号： H01J37/08 , G21K5/10
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31761 , Y10S438/961
摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.
摘要翻译：离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3）操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

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