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1. 发明授权

US08388112B2 Printhead and method of fabricating the same 有权
标题翻译：打印头及其制造方法
公开(公告)号：US08388112B2
公开(公告)日：2013-03-05
申请号：US13148601
申请日：2009-02-24
申请人： Peter Mardilovich , Neal Wayne Meyer , Arjang Fartash
发明人： Peter Mardilovich , Neal Wayne Meyer , Arjang Fartash
IPC分类号： B41J2/05 , B21D53/76
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1634 , Y10T29/49401
摘要： Disclosed is a printhead having at least one ink drop generator region, which includes an ink chamber, an orifice through which ink drops are ejected, and a heating element positioned below the ink chamber. The heating element includes a resistor defined therein and a nano-structured surface that is exposed to the ink fluid supplied to the ink chamber. The nano-structured surface takes the form of an array of nano-pillars. The printhead is fabricated by a method that includes: forming a heating element having an oxidizable metal layer as the uppermost layer; forming an aluminum-containing layer on the oxidizable metal layer; anodizing the aluminum-containing layer to form porous alumina; anodizing the oxidizable metal layer so as to partially fill the pores in the porous alumina with metal oxide material; and removing the porous alumina by selective etching to produce a nano-structured surface.
摘要翻译：公开了一种具有至少一个墨滴发生器区域的打印头，其包括墨水室，喷射墨滴的孔口和位于墨水室下方的加热元件。加热元件包括限定在其中的电阻器和暴露于供应到墨水室的墨水流体的纳米结构的表面。纳米结构表面采用纳米柱阵列的形式。打印头通过以下方法制造：包括：形成具有可氧化金属层作为最上层的加热元件; 在可氧化金属层上形成含铝层; 阳极氧化含铝层以形成多孔氧化铝; 阳极氧化可氧化金属层，以便用金属氧化物材料部分地填充多孔氧化铝中的孔; 并通过选择性蚀刻去除多孔氧化铝以产生纳米结构化表面。

2. 发明申请

US20110310182A1 PRINTHEAD AND METHOD OF FABRICATING THE SAME 有权
标题翻译： PRINTHEAD及其制造方法
公开(公告)号：US20110310182A1
公开(公告)日：2011-12-22
申请号：US13148601
申请日：2009-02-24
申请人： Peter Mardilovich , Neal Wayne Meyer , Arjang Fartash
发明人： Peter Mardilovich , Neal Wayne Meyer , Arjang Fartash
IPC分类号： B41J2/05 , B21D53/76
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1634 , Y10T29/49401
摘要： Disclosed is a printhead having at least one ink drop generator region, which includes an ink chamber, an orifice through which ink drops are ejected, and a heating element positioned below the ink chamber. The heating element includes a resistor defined therein and a nano-structured surface that is exposed to the ink fluid supplied to the ink chamber. The nano-structured surface takes the form of an array of nano-pillars. The printhead is fabricated by a method that includes: forming a heating element having an oxidizable metal layer as the uppermost layer; forming an aluminum-containing layer on the oxidizable metal layer; anodizing the aluminum-containing layer to form porous alumina; anodizing the oxidizable metal layer so as to partially fill the pores in the porous alumina with metal oxide material; and removing the porous alumina by selective etching to produce a nano-structured surface.
摘要翻译：公开了一种具有至少一个墨滴发生器区域的打印头，其包括墨水室，喷射墨滴的孔口和位于墨水室下方的加热元件。加热元件包括限定在其中的电阻器和暴露于供应到墨水室的墨水流体的纳米结构的表面。纳米结构表面采用纳米柱阵列的形式。打印头通过以下方法制造：包括：形成具有可氧化金属层作为最上层的加热元件; 在可氧化金属层上形成含铝层; 阳极氧化含铝层以形成多孔氧化铝; 阳极氧化可氧化金属层，以便用金属氧化物材料部分地填充多孔氧化铝中的孔; 并通过选择性蚀刻去除多孔氧化铝以产生纳米结构化表面。

3. 发明授权

US08390423B2 Nanoflat resistor 有权
标题翻译：纳米电阻
公开(公告)号：US08390423B2
公开(公告)日：2013-03-05
申请号：US13321461
申请日：2009-05-19
申请人： Arjang Fartash , Peter Mardilovich
发明人： Arjang Fartash , Peter Mardilovich
IPC分类号： H01C1/012
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1646
摘要： A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); andnanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.
摘要翻译：纳米电阻器包括第一铝电极（360），第二铝电极（370）; 和分离第一和第二铝电极（360,370）的纳米氧化铝（365）。基本上平面的电阻层（330）覆盖在第一和第二铝电极（360,370）和纳米多孔氧化铝（365）上。电流从第一铝电极（360）通过覆盖纳米多孔氧化铝（365）的平面电阻层（350）的一部分并进入第二铝电极（370）。还提供了一种用于构造纳米片式电阻器（390）的方法。

4. 发明申请

US20120062355A1 NANOFLAT RESISTOR 有权
标题翻译： NANOFLAT电阻器
公开(公告)号：US20120062355A1
公开(公告)日：2012-03-15
申请号：US13321461
申请日：2009-05-19
申请人： Arjang Fartash , Peter Mardilovich
发明人： Arjang Fartash , Peter Mardilovich
IPC分类号： H01C1/012 , H01C17/06 , B82Y40/00 , B82Y30/00
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1646
摘要： A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); and nanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.
摘要翻译：纳米电阻器包括第一铝电极（360），第二铝电极（370）; 和分离第一和第二铝电极（360,370）的纳米多孔氧化铝（365）。基本上平面的电阻层（330）覆盖在第一和第二铝电极（360,370）和纳米多孔氧化铝（365）上。电流从第一铝电极（360）通过覆盖纳米多孔氧化铝（365）的平面电阻层（350）的一部分并进入第二铝电极（370）。还提供了一种用于构造纳米片式电阻器（390）的方法。

5. 发明授权

US07132132B2 Method of forming a fluid ejection device with a compressive alpha-tantalum layer 有权
标题翻译：用压缩α-钽层形成流体喷射装置的方法
公开(公告)号：US07132132B2
公开(公告)日：2006-11-07
申请号：US11065933
申请日：2005-02-25
申请人： Arjang Fartash
发明人： Arjang Fartash
IPC分类号： B05D5/12
CPC分类号： B41J2/14129 , B41J2202/03
摘要： A method of forming a fluid ejection device is disclosed. The steps of forming the fluid ejection device may include forming a heating element on a substrate. The steps for forming the fluid ejection device may further include depositing a buffer layer over the heating element, and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer.
摘要翻译：公开了一种形成流体喷射装置的方法。形成流体喷射装置的步骤可以包括在基板上形成加热元件。用于形成流体喷射装置的步骤还可以包括在加热元件上沉积缓冲层，以及在压缩α-钽层与缓冲层之间的晶格匹配的缓冲层上沉积一层压缩的α-钽。

6. 发明授权

US07131193B2 Heat-shrinkable retainer for PCB double-sided assembly 失效
公开(公告)号：US07131193B2
公开(公告)日：2006-11-07
申请号：US10847989
申请日：2004-05-17
申请人： Arjang Fartash , Christopher D. Combs , Raiyomand Aspandiar , Tom E. Pearson
发明人： Arjang Fartash , Christopher D. Combs , Raiyomand Aspandiar , Tom E. Pearson
IPC分类号： H05K3/36
CPC分类号： H05K3/303 , H05K3/301 , H05K3/3415 , H05K2201/0125 , H05K2201/09072 , H05K2201/10598 , H05K2201/10734 , Y02P70/613 , Y10T29/49126 , Y10T29/4913 , Y10T29/49139 , Y10T29/49144 , Y10T29/49147 , Y10T29/49153
摘要： An apparatus to retain an assembled component on one side of a double-sided printed circuit board during reflow of other components subsequently positioned on an opposite side of the double-sided printed circuit board and methods for manufacturing and using the same. The retainer includes a heat-shrinkable member and a retaining member. Being formed from a heat-shrinkable material, the heat-shrinkable member is configured to receive a post extending through an opening formed in a double-sided printed circuit board from a component previously assembled on one side thereof. The retaining member is coupled with the heat-shrinkable member, and the double-sided printed circuit board is disposed substantially between the retaining member and the component. The heat-shrinkable member is configured to shrinkably engage the post when an opposite side of the double-sided printed circuit board is populated and reflowed, retaining the inverted component on the double-sided printed circuit board.

7. 发明申请

US20050253902A1 Chamber having a protective layer 有权
公开(公告)号：US20050253902A1
公开(公告)日：2005-11-17
申请号：US11190137
申请日：2005-07-25
申请人： Arjang Fartash
发明人： Arjang Fartash
IPC分类号： B41J2/05 , B05C5/00 , B41J2/14 , B41J2/16
CPC分类号： B41J2/1631 , B41J2/1404 , B41J2/1433 , B41J2/1603 , B41J2/1606 , B41J2/162 , B41J2/1634 , B41J2/1642 , B41J2/1646 , Y10T29/49401
摘要： A chamber includes a substrate, a chamber layer disposed on the substrate that defines the sidewalls of the chamber, and the chamber layer has a chamber surface. The chamber has an area in the plane formed by the chamber surface in the range from about 1 square micrometer to about 10,000 square micrometers. The chamber also includes an orifice layer disposed over the chamber layer. The orifice layer has a first and second orifice surface and a bore wherein the bore has an area in the plane formed by the first orifice surface less than the chamber area. The chamber further includes a protective layer deposited, through the bore, on the sidewalls of the chamber layer and a portion of the first orifice surface.

8. 发明申请

US20050250313A1 Compressive alpha-tantalum thin film stack 失效
标题翻译：压缩式α-钽薄膜叠层
公开(公告)号：US20050250313A1
公开(公告)日：2005-11-10
申请号：US11179302
申请日：2005-07-12
申请人： Arjang Fartash
发明人： Arjang Fartash
IPC分类号： C23C14/02 , C23C14/16 , H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76876 , C23C14/025 , C23C14/165 , H01L21/2855 , H01L21/76841 , H01L2221/1078 , Y10T428/12576 , Y10T428/12611 , Y10T428/12819 , Y10T428/31678
摘要： A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. A bias may be applied to the substrate during deposition of the buffer layer and/or compressive alpha-tantalum layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.
摘要翻译：通过在衬底上沉积缓冲层而在衬底上形成一层压缩的α-钽，并在压缩的α-钽层和缓冲层之间的晶格匹配的缓冲层上沉积一层压缩的α-钽。在沉积缓冲层和/或压缩的α-钽层期间，偏置可以施加于衬底。在一些实施例中，该方法可以包括沉积包含钛，铌，基本上纯的铝或铝 - 铜合金的缓冲层。

9. 发明申请

US20050233159A1 Method of making a tantalum layer and apparatus using a tantalum layer 失效
标题翻译：制造钽层的方法和使用钽层的设备
公开(公告)号：US20050233159A1
公开(公告)日：2005-10-20
申请号：US10825841
申请日：2004-04-15
申请人： Arjang Fartash
发明人： Arjang Fartash
IPC分类号： C23C14/14 , B32B15/04 , B41J2/14 , C23C14/02 , C23C14/16 , C23C16/06 , H01G4/33 , H01G13/00 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76838 , B41J2/14129 , B41J2202/03 , C23C14/025 , C23C14/165 , H01L21/2855 , H01L21/76841 , H01L21/76871 , H01L21/76876 , Y10T29/49432 , Y10T428/12819 , Y10T428/24992 , Y10T428/26 , Y10T428/31678
摘要： A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer has a substantially bcc-phase tantalum region on the first layer region, and a non-bcc-phase tantalum region on the second layer region.
摘要翻译：一种制造钽结构的方法，包括：在第一层的第一层区域和第二层的第二层区域上形成钽层。钽层在第一层区域上具有大致bcc相钽区域，在第二层区域上具有非bcc相钽区域。

10. 发明授权

US07552533B2 Method of manufacturing a fluid ejector head 有权
标题翻译：制造流体喷射头的方法
公开(公告)号：US07552533B2
公开(公告)日：2009-06-30
申请号：US11190137
申请日：2005-07-25
申请人： Arjang Fartash
发明人： Arjang Fartash
IPC分类号： B21D53/76 , C23C14/34
CPC分类号： B41J2/1631 , B41J2/1404 , B41J2/1433 , B41J2/1603 , B41J2/1606 , B41J2/162 , B41J2/1634 , B41J2/1642 , B41J2/1646 , Y10T29/49401
摘要： A fluid ejector head is manufactured. Sidewalls of at least one fluid ejection chamber are defined about at least one fluid drop generator disposed over a substrate. At least one bore is created over the at least one fluid ejection chamber. The at least one bore has a first nozzle surface proximate to the at least one fluid ejection chamber, and a second nozzle surface distal to the at least one fluid ejection chamber. An initial deposit of a protective layer material is deposited at a low substrate bias voltage through the at least one bore. A portion of the initial deposit of the protective layer material is redistributed on the sidewalls at a high substrate bias voltage. An inorganic protective layer is formed on the sidewalls of the at least one fluid ejection chamber and on a portion of the first nozzle surface.
摘要翻译：制造流体喷射头。关于至少一个流体喷射室的侧壁围绕设置在基板上的至少一个液滴发生器定义。在至少一个流体喷射室上形成至少一个孔。所述至少一个孔具有靠近所述至少一个流体喷射室的第一喷嘴表面，以及远离所述至少一个流体喷射室的第二喷嘴表面。保护层材料的初始沉积物通过至少一个孔以低衬底偏置电压沉积。保护层材料的初始沉积的一部分在高衬底偏置电压下重新分布在侧壁上。在至少一个流体喷射室的侧壁上和第一喷嘴表面的一部分上形成无机保护层。

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