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1. 发明授权

US5925009A Alginate fabric, method of preparation and use 失效
标题翻译：藻酸盐织物，制备和使用方法
公开(公告)号：US5925009A
公开(公告)日：1999-07-20
申请号：US765759
申请日：1997-05-30
申请人： Peter M. J. Mahoney , David Kershaw , David Pritchard , John Charles Fenton
发明人： Peter M. J. Mahoney , David Kershaw , David Pritchard , John Charles Fenton
IPC分类号： A61L15/16 , A61L15/18 , A61L15/28 , A61L15/44 , D01F9/04 , D04H1/40 , D21H13/10 , D21H13/32 , D21H17/67 , A61L15/00
CPC分类号： D01F9/04 , A61L15/18 , A61L15/28
摘要： Alginate fabrics have, in conjuction with charcoal cloth, been used in wound dressings for malodorous wounds and there are commercial examples of such wound dressings. A problem associated with known alginate wound dressings which employ charcoal cloth is that the dressing is a relatively rigid structure. Furthermore, the known dressings have been constrained to the use of charcoal cloth which limits the absorptive properties thereof for wound odorants due to the fixed surface area of the cloth. We have now developed an alginate fabric which alleviates the above problems, and there is provided by the present invention an alginate fabric having particulate charcoal dispersed therein.
摘要翻译： PCT No.PCT / EP95 / 02541 Sec。 371日期1997年5月30日 102（e）日期1997年5月30日PCT提交1995年7月5日PCT公布。第WO96 / 01658号公报日期1996年1月25日海藻面料与木炭布相结合，用于伤口敷料中的恶臭伤口，并有这种伤口敷料的商业实例。与使用木炭布的已知藻酸盐伤口敷料相关的问题是该敷料是相对刚性的结构。此外，已知的敷料被限制为使用木炭布，其限制了由于布的固定表面积引起的伤口气味剂的吸收性能。现在我们已经开发了一种减轻上述问题的藻酸盐织物，本发明提供了一种分散有颗粒状炭的藻酸盐织物。

2. 发明授权

US6140257A Composite fibres, wound dressings incorporating such fibres and a method for making same 有权
标题翻译：复合纤维，包含这种纤维的伤口敷料及其制造方法
公开(公告)号：US6140257A
公开(公告)日：2000-10-31
申请号：US155950
申请日：1998-12-21
申请人： David Kershaw , Peter M. J. Mahoney , Paul Hanmer , David Pritchard
发明人： David Kershaw , Peter M. J. Mahoney , Paul Hanmer , David Pritchard
IPC分类号： A61L15/16 , A61F13/00 , A61L15/22 , A61L15/28 , D01F2/28 , D01F6/96 , D01F9/04 , D03D15/00 , D04B21/00 , D04H1/42 , A61L15/60
CPC分类号： A61F13/00008 , A61L15/225 , A61L15/28 , D01F2/28 , D01F9/04 , A61F13/069 , A61F2013/00229 , A61F2013/00238 , A61F2013/00523 , A61F2013/00719 , A61F2013/00748 , A61F2013/00931 , Y10T428/29
摘要： An absorbent, composite fibre comprising a matrix of from 10% to less than 50% of water insoluble alginate having dispersed therein at least 40% of another polysaccharide.
摘要翻译： PCT No.PCT / EP97 / 01880 Sec。 371 1998年12月21日第 102（e）日期1998年12月21日PCT 1997年4月11日PCT PCT。公开号WO97 / 39170 日期1997年10月23日一种吸收性复合纤维，其包含10％至小于50％的不溶于水的藻酸盐的基质，其中分散有至少40％的另一种多糖。

3. 发明授权

US5914124A Alginate fibre, process for the preparation thereof and use 失效
标题翻译：海藻酸纤维，其制备方法和用途
公开(公告)号：US5914124A
公开(公告)日：1999-06-22
申请号：US765748
申请日：1997-05-30
申请人： Peter M. J. Mahoney , David Pritchard , Anne Elizabeth Howells , Bryan Griffiths
发明人： Peter M. J. Mahoney , David Pritchard , Anne Elizabeth Howells , Bryan Griffiths
IPC分类号： A61K9/70 , A61L15/28 , A61L15/38 , A61L15/44 , A61L15/46 , A61L15/64 , D01F9/04 , D06M11/00 , D06M11/07 , D06M11/13 , D06M11/76 , D06M15/15 , D06M101/04 , A61F13/00
CPC分类号： D01F9/04 , A61K9/70 , A61L15/28 , A61L15/38 , A61L15/44 , A61L15/46 , Y10S424/13
摘要： Alginate fibres comprising at least one medicament incorporated into the structure thereof, the medicament being present at a level of at least 10% by weight, based on the weight of the alginate fibre with no incorporated medicament.
摘要翻译： PCT No.PCT / EP95 / 02773 371日期1997年5月30日 102（e）日期1997年5月30日PCT提交1995年7月14日PCT公布。公开号WO96 / 02284 日期1996年2月1日包含至少一种掺入其结构的药物的海藻酸纤维，所述药物的存在量为至少10重量％，基于没有掺入药物的藻酸盐纤维的重量。

4. 发明申请

US20120098279A1 LATCH ASSEMBLY 有权
标题翻译：拉锁总成
公开(公告)号：US20120098279A1
公开(公告)日：2012-04-26
申请号：US13112547
申请日：2011-05-20
申请人： Hardev Singh , Peter Coleman , David Peatey , Andrew Fairey , John Gorton , Michael Smith , Patrice Cardine , Samuel Hall , Paul Norman , David Pritchard
发明人： Hardev Singh , Peter Coleman , David Peatey , Andrew Fairey , John Gorton , Michael Smith , Patrice Cardine , Samuel Hall , Paul Norman , David Pritchard
IPC分类号： E05C3/16
CPC分类号： E05B85/243 , E05B77/26 , E05B77/265 , E05B77/34 , E05B81/06 , E05B81/20 , Y10T292/1047 , Y10T292/108 , Y10T292/1082
摘要： A latch assembly is provided, the latch assembly having: a chassis, a latch bolt having a closed position and an open position a pawl having an engaged position and a disengaged position an eccentric arrangement defining an eccentric axis and a pawl axis remote from the eccentric axis wherein when the pawl moves from the engaged position to the disengaged position the eccentric arrangement rotates about the eccentric axis to move the pawl axis from a first pawl axis position to a second pawl axis position, a retaining mechanism having a retaining position at which the pawl axis is held in the first pawl axis position and having a non-retaining position at which the pawl axis is allowed to move to the second pawl axis position, a release lever configured to move the retaining mechanism between the retaining position and the non-retaining position.
摘要翻译：提供了一种闩锁组件，所述闩锁组件具有：底盘，具有闭合位置的闩锁螺栓和打开位置，具有接合位置的棘爪和脱离位置，限定偏心轴线的偏心装置和远离偏心轮的爪轴线其中当所述棘爪从所述接合位置移动到所述脱离位置时，所述偏心装置围绕所述偏心轴线旋转以将所述棘爪轴线从第一棘爪轴位置移动到第二棘爪轴位置，保持机构具有保持位置，棘爪轴线保持在第一棘爪轴位置，并且具有非卡止位置，爪保持位置允许爪轴线移动到第二棘爪轴线位置;释放杆构造成使保持机构在保持位置和非卡定位置之间移动，保留位置。

5. 发明授权

US07955919B2 Spacer-less transistor integration scheme for high-K gate dielectrics and small gate-to-gate spaces applicable to Si, SiGe and strained silicon schemes 有权
标题翻译：用于高K栅极介质和适用于Si，SiGe和应变硅方案的小栅极到栅极空间的无间隔晶体管集成方案
公开(公告)号：US07955919B2
公开(公告)日：2011-06-07
申请号：US11960554
申请日：2007-12-19
申请人： David Pritchard , Hemanshu Bhatt , David T. Price
发明人： David Pritchard , Hemanshu Bhatt , David T. Price
IPC分类号： H01L21/336
CPC分类号： H01L29/517 , H01L21/823807 , H01L21/823828 , H01L29/4958 , H01L29/665 , H01L29/66606
摘要： A transistor integration process provides a damascene method for the formation of gate electrodes and gate dielectric layers. An interlayer-dielectric film is deposited prior to the gate electrode formation to avoid the demanding gap fill requirements presented by adjacent gates. A trench is formed in the interlayer-dielectric film followed by the deposition of the gate material in the trench. This process avoids the potential for damage to high-k gate dielectric layers caused by high thermal cycles and also reduces or eliminates the problematic formation of voids in the dielectric layers filling the gaps between adjacent gates.
摘要翻译：晶体管积分过程提供了用于形成栅极电极和栅极电介质层的镶嵌方法。在栅电极形成之前沉积层间绝缘膜，以避免由相邻栅极呈现的苛刻的间隙填充要求。在层间电介质膜中形成沟槽，随后在沟槽中沉积栅极材料。该过程避免了由高热循环引起的对高k栅极电介质层的损坏的可能性，并且还减少或消除填充相邻栅极之间的间隙的电介质层中空隙的有问题的形成。

6. 发明申请

US20110059025A1 IN VIVO IMAGING 审中-公开
标题翻译：在VIVO成像
公开(公告)号：US20110059025A1
公开(公告)日：2011-03-10
申请号：US12990217
申请日：2009-05-01
申请人： David Pritchard , Claire Geekie Dunn , Prabhjyot Dehal
发明人： David Pritchard , Claire Geekie Dunn , Prabhjyot Dehal
IPC分类号： A61B5/055
CPC分类号： A61K49/14 , A61K49/085 , A61K49/16 , A61K49/1818 , B82Y5/00
摘要： The present invention provides an imaging method for obtaining an image of a patient by means of a contrast agent wherein the method comprises subjecting the patient to an imaging method for which the contrast agent is suitable, wherein the contrast agent comprises: (a) a binding moiety; and (b) a recognition moiety capable of targeting the contrast agent to a site within the body of the patient, and wherein the binding moiety comprises a metal-binding protein, polypeptide or peptide which is bound to or encapsulates a magnetic or magnetizable substance.
摘要翻译：本发明提供了一种用于通过造影剂获得患者图像的成像方法，其中所述方法包括使患者接受造影剂适合的成像方法，其中造影剂包括：（a）结合部分; 和（b）能够将造影剂靶向患者体内部位的识别部分，并且其中所述结合部分包含结合或包封磁性或可磁化物质的金属结合蛋白，多肽或肽。

7. 发明授权

US07678654B2 Buried bitline with reduced resistance 失效
标题翻译：埋伏的位线减少阻力
公开(公告)号：US07678654B2
公开(公告)日：2010-03-16
申请号：US11478313
申请日：2006-06-30
申请人： Christoph Kleint , Clemens Fitz , Ulrike Bewersdorff-Sarlette , Christoph Ludwig , David Pritchard , Torsten Müller , Hocine Boubekeur
发明人： Christoph Kleint , Clemens Fitz , Ulrike Bewersdorff-Sarlette , Christoph Ludwig , David Pritchard , Torsten Müller , Hocine Boubekeur
IPC分类号： H01L21/8247 , H01L29/792
CPC分类号： G11C5/063 , G11C7/18 , H01L21/28282 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A memory cell array includes a number of memory cells, each of the memory cells including a source and a drain region defined by corresponding bitlines within a semiconductor substrate. Each of the bitlines has a doped semiconductor region as well as a conductive region in direct electrical contact with the doped semiconductor region.
摘要翻译：存储单元阵列包括多个存储单元，每个存储单元包括由半导体衬底内的相应位线限定的源极和漏极区域。每个位线具有掺杂半导体区域以及与掺杂半导体区域直接电接触的导电区域。

8. 发明申请

US20080108551A1 Treatment of wounds 审中-公开
标题翻译：治疗伤口
公开(公告)号：US20080108551A1
公开(公告)日：2008-05-08
申请号：US11823209
申请日：2007-06-27
申请人： Adele Horobin , Kevin Shakesheff , David Pritchard
发明人： Adele Horobin , Kevin Shakesheff , David Pritchard
IPC分类号： A61K38/02 , C12N9/50 , C12N5/06 , C07K2/00
CPC分类号： C12N9/6408 , A61K38/00
摘要： The invention generally provides compositions and methods that promote wound healing. Such compositions comprise isolated L. sericata polypeptides having serine protease activity. Desirably, the serine protease degrades fibronectin. The invention further provides biologically active fragments of fibronectin that promote wound healing that are the degradation products of incubation with ES.
摘要翻译：本发明通常提供促进伤口愈合的组合物和方法。这种组合物包含具有丝氨酸蛋白酶活性的分离的丝胶多糖。希望丝氨酸蛋白酶降解纤连蛋白。本发明还提供促进伤口愈合的纤连蛋白的生物活性片段，其是与ES孵育的降解产物。

9. 发明申请

US20050053597A1 Composition and method for treatment of wounds 审中-公开
标题翻译：治疗伤口的组成和方法
公开(公告)号：US20050053597A1
公开(公告)日：2005-03-10
申请号：US10495740
申请日：2002-11-18
申请人： David Pritchard
发明人： David Pritchard
IPC分类号： A61L15/44 , A61K35/64 , A61K38/00 , A61K38/46 , A61K38/48 , A61K45/00 , A61L15/38 , A61L15/40 , A61P17/02 , C07K14/435 , A61K38/16
CPC分类号： C07K14/43577 , A61K38/00 , A61K38/482 , A61L15/38 , A61L15/40 , A61K2300/00
摘要： A composition for treatment of a wound to promote healing thereof in a human or non-human mammal comprises an active amount of a toll receptor (or toll-like receptor) ligand, or a precursor thereof, and a suitable carrier. The ligand may be a spatzle or spatzle-like protein derived from an insect, such as Drosophila melanogaster or Lucilia sericata. The invention also relates to a method of treating a wound which comprises applying to the wound a composition according to the invention, and a dressing for a wound which comprises a support carrying composition according to the invention.
摘要翻译：用于治疗伤口以促进其在人或非人哺乳动物中的组合物包含活性量的通过量受体（或toll样受体）配体或其前体和合适的载体。配体可以是衍生自昆虫的漱口或类似于蛋白质的蛋白质，例如果蝇（Drosophila melanogaster）或丝绢丝菌（Lucilia sericata）。本发明还涉及一种治疗伤口的方法，其包括向伤口施用根据本发明的组合物和包含根据本发明的支持载体组合物的伤口敷料。

10. 发明授权

US06562700B1 Process for removal of resist mask over low k carbon-doped silicon oxide dielectric material of an integrated circuit structure, and removal of residues from via etch and resist mask removal 有权
标题翻译：用于在集成电路结构的低k碳掺杂氧化硅介电材料上去除抗蚀剂掩模的工艺，以及从通孔蚀刻和抗蚀剂掩模去除中除去残余物
公开(公告)号：US06562700B1
公开(公告)日：2003-05-13
申请号：US09873043
申请日：2001-05-31
申请人： Sam Gu , David Pritchard , Derryl D. J. Allman , Ponce Saopraseuth , Steve Reder
发明人： Sam Gu , David Pritchard , Derryl D. J. Allman , Ponce Saopraseuth , Steve Reder
IPC分类号： H01L21322
CPC分类号： H01L21/31138 , H01L21/02052 , H01L21/31633
摘要： A process is disclosed for removing a photoresist mask used to form openings in an underlying layer of low k carbon-doped silicon oxide dielectric material of an integrated circuit structure formed on a semiconductor substrate, which comprises exposing the photoresist mask in a plasma reactor to a plasma formed using a reducing gas until the photoresist mask is removed. In a preferred embodiment the reducing gas is selected from the group consisting of NH3, H2, forming gas, and a mixture of NH3 and H2. The process further provides for the removal of etch residues by first contacting the low k carbon-doped silicon oxide dielectric material with a solvent capable of dissolving and/or removing etch residues left from forming the openings in the low k dielectric material, and from removing the photoresist mask used to form the openings in the low k carbon-doped silicon oxide dielectric material; and then annealing the substrate in an annealing chamber at a temperature sufficient to remove liquid and gaseous byproducts from the low k carbon-doped silicon oxide dielectric material.
摘要翻译：公开了一种用于去除在半导体衬底上形成的集成电路结构的低k碳掺杂氧化硅介电材料的下层中形成开口的光刻胶掩模的方法，其包括将等离子体反应器中的光刻胶掩模曝光于使用还原气体形成的等离子体直到除去光致抗蚀剂掩模。在优选的实施方案中，还原气体选自NH 3，H 2，形成气体和NH 3和H 2的混合物。该方法还通过首先使低k碳掺杂的氧化硅介电材料与能够溶解和/或去除在低k电介质材料中形成开口所留下的蚀刻残留物的溶剂和除去用于在低k碳掺杂氧化硅电介质材料中形成开口的光致抗蚀剂掩模; 然后在退火室中以足以从低k碳掺杂的氧化硅介电材料除去液体和气体副产物的温度退火衬底。

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