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1. 发明申请

US20050073869A1 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
公开(公告)号：US20050073869A1
公开(公告)日：2005-04-07
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
发明人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

2. 发明申请

US20060007722A1 Operating temperature optimization in a ferroelectric or electret memory 失效
标题翻译：在铁电或驻极体记忆中的工作温度优化
公开(公告)号：US20060007722A1
公开(公告)日：2006-01-12
申请号：US11168375
申请日：2005-06-29
申请人： Per-Erik Nordal , Geirr Leistad , Per Broms , Hans Gudesen
发明人： Per-Erik Nordal , Geirr Leistad , Per Broms , Hans Gudesen
IPC分类号： G11C11/42
CPC分类号： G11C29/021 , G11C11/22 , G11C29/02 , G11C29/028 , G11C2029/5002
摘要： In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with controller circuitry and the controller circuitry is connected with an external power supply, which controlled by the former powers the Joule heating means to achieve a selected operating temperature. In a method for operating the heating and temperature control system an ambient or instant temperature of the memory device is determined and compared with the set nominal optimal temperature, and the difference between these temperatures is used in a predefined algorithm for establishing control parameters for the application of power to the Joule heating means to achieve the selected operating temperature in the memory device during an addressing operation thereto.
摘要翻译：在包括至少一个可矩阵寻址的铁电或驻极体存储装置的数据存储装置的加热和温度控制系统中，在存储装置中提供焦耳加热装置，温度确定装置与控制器电路连接，并且控制器电路被连接具有外部电源，由前者的焦炭控制，焦耳加热意味着实现选定的工作温度。在用于操作加热和温度控制系统的方法中，确定存储器件的环境温度或即时温度并将其与设定的标称最佳温度进行比较，并且在用于建立应用的控制参数的预定义算法中使用这些温度之间的差异的焦耳加热装置的功率，以在其寻址操作期间实现存储装置中的选定的工作温度。

3. 发明申请

US20060002171A1 Bimodal operation of ferroelectric and electret memory cells and devices 失效
标题翻译：铁电和驻极体存储器单元和器件的双峰操作
公开(公告)号：US20060002171A1
公开(公告)日：2006-01-05
申请号：US11105350
申请日：2005-04-14
申请人： Hans Gudesen , Geirr Leistad , Isak Engquist , Goran Gustafsson
发明人： Hans Gudesen , Geirr Leistad , Isak Engquist , Goran Gustafsson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

4. 发明申请

US20050105358A1 Sense amplifier systems and a matrix-addressable memory device provided therewith 失效
标题翻译：感测放大器系统和与其配合的矩阵寻址存储器件
公开(公告)号：US20050105358A1
公开(公告)日：2005-05-19
申请号：US10808513
申请日：2004-03-25
申请人： Robert Schweickert , Geirr Leistad
发明人： Robert Schweickert , Geirr Leistad
IPC分类号： G11C20060101 , G11C7/06 , G11C11/22 , G11C16/06
CPC分类号： G11C7/062 , G11C11/22 , G11C2207/063
摘要： A sense amplifier system for sensing the charge of a charge-storing means (601) comprises first and second charge reference means (600a,600b) connected in parallel and similar to the charge-storing means itself and having respectively opposite polarizations. The charge reference means (600a,600b) and the charge storing means (600) have a common input node (WL), and first and second pseudo-differential reference sense amplifiers (RSA1, RSA2) are connected with output nodes (RBL1, RBL2) of the charge reference means (600a,600b) for generating reference signals to a common reference node (CHREF) connected with a pseudo-differential sense amplifier (SA). The pseudo-differential sense amplifier (SA) has a second input for receiving an output signal from the charge-storing means (601) and generates an output signal indicative of a polarization state of the charge-storing means. Another sense amplifier system is generically similar, but adapted for sensing the charges of a plurality of charge-storing means (701) and comprises for this purpose at least two pairs of charge reference means (700). The charge-storing means (701) form the elements in an orthogonal matrix such that all elements in a row are connected with a pseudo-differential sense amplifier (SA). This sense amplifier system is implemented in a non-volatile matrix-addressable memory device comprising an electrical polarizable dielectric memory material exhibiting hysteresis, particularly a ferroelectric or electret material. The memory cells (801) of the memory device can be selectivly addressed for a write/read operation and the sense amplifier system (SA) is used for readout of polarization states of the memory cells.
摘要翻译：用于感测电荷存储装置（601）的电荷的读出放大器系统包括并联连接并类似于电荷存储装置本身并具有分别相反偏振的第一和第二电荷参考装置（600a，600b）。电荷参考装置（600a，600b）和电荷存储装置（600）具有公共输入节点（WL），以及第一和第二伪差分参考读出放大器（RSA 1，RSA 用于产生参考的电荷参考装置（600a，600b）的输出节点（RBL 1，RBL 2 2）连接，信号发送到与伪差分读出放大器（SA）连接的公共参考节点（CHREF）。伪差分读出放大器（SA）具有用于从电荷存储装置（601）接收输出信号的第二输入端，并产生指示电荷存储装置的极化状态的输出信号。另一种感测放大器系统通常类似，但适于感测多个电荷存储装置（701）的电荷，并且包括用于该目的的至少两对电荷参考装置（700）。电荷存储装置（701）形成正交矩阵中的元件，使得一行中的所有元件与伪差分读出放大器（SA）连接。该感测放大器系统在非易失性矩阵寻址存储器件中实现，该器件包括显示磁滞的电极化电介质存储器材料，特别是铁电或驻极体材料。可以选择性地寻址存储器件的存储器单元（801）用于写入/读取操作，并且读出放大器系统（SA）用于读出存储器单元的极化状态。

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