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1. 发明申请

US20050073869A1 Method for operating a ferroelectric of electret memory device, and a device of this kind 有权
公开(公告)号：US20050073869A1
公开(公告)日：2005-04-07
申请号：US10659428
申请日：2003-09-11
申请人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
发明人： Hans Gudesen , Per-Erik Nordal , Geirr Leistad , Per Broms , Per Sandstrom , Mats Johansson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.

2. 发明申请

US20060007722A1 Operating temperature optimization in a ferroelectric or electret memory 失效
标题翻译：在铁电或驻极体记忆中的工作温度优化
公开(公告)号：US20060007722A1
公开(公告)日：2006-01-12
申请号：US11168375
申请日：2005-06-29
申请人： Per-Erik Nordal , Geirr Leistad , Per Broms , Hans Gudesen
发明人： Per-Erik Nordal , Geirr Leistad , Per Broms , Hans Gudesen
IPC分类号： G11C11/42
CPC分类号： G11C29/021 , G11C11/22 , G11C29/02 , G11C29/028 , G11C2029/5002
摘要： In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with controller circuitry and the controller circuitry is connected with an external power supply, which controlled by the former powers the Joule heating means to achieve a selected operating temperature. In a method for operating the heating and temperature control system an ambient or instant temperature of the memory device is determined and compared with the set nominal optimal temperature, and the difference between these temperatures is used in a predefined algorithm for establishing control parameters for the application of power to the Joule heating means to achieve the selected operating temperature in the memory device during an addressing operation thereto.
摘要翻译：在包括至少一个可矩阵寻址的铁电或驻极体存储装置的数据存储装置的加热和温度控制系统中，在存储装置中提供焦耳加热装置，温度确定装置与控制器电路连接，并且控制器电路被连接具有外部电源，由前者的焦炭控制，焦耳加热意味着实现选定的工作温度。在用于操作加热和温度控制系统的方法中，确定存储器件的环境温度或即时温度并将其与设定的标称最佳温度进行比较，并且在用于建立应用的控制参数的预定义算法中使用这些温度之间的差异的焦耳加热装置的功率，以在其寻址操作期间实现存储装置中的选定的工作温度。

3. 发明申请

US20060146589A1 Method for operating a passive matrix-addressable ferroelectric or electret memory device 失效
标题翻译：用于操作无源矩阵寻址铁电或驻极体存储器件的方法
公开(公告)号：US20060146589A1
公开(公告)日：2006-07-06
申请号：US11027977
申请日：2005-01-04
申请人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
发明人： Christer Karlsson , Goran Gustafsson , Mats Johansson , Per Sandstrom , Per-Erik Nordal , Hans Gudesen , Johan Carlsson
IPC分类号： G11C11/22
CPC分类号： G11C29/50 , G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有定义参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有所定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受不影响这些单元的极化状态的零电压或电压。

4. 发明申请

US20050249975A1 Organic electronic device and methods for manufacturing a device of this kind 失效
标题翻译：有机电子装置及其制造方法
公开(公告)号：US20050249975A1
公开(公告)日：2005-11-10
申请号：US11088194
申请日：2005-03-24
申请人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gudesen , Goran Gustafsson , Linda Andersson
发明人： Mats Sandberg , Per-Erik Nordal , Grzegorz Greczynski , Mats Johansson , Per Carlsen , Hans Gudesen , Goran Gustafsson , Linda Andersson
IPC分类号： B32B19/00 , G11C11/22 , G11C13/02 , H01L20060101 , H01L33/00 , H01L51/10 , H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/55 , H01L51/0025 , H01L51/0026 , H01L51/0034 , H01L51/0043 , H01L51/005
摘要： An organic electronic device consists of one or more electro-active organic or polymer materials sandwiched between electrodes. Critical in such devices is the interface between the electrode and the polymer, where degradation or chemical reaction products may develop that are deleterious to the proper functioning of the device. This is solved by introducing a functional interlayer composed of one or more materials consisting of a molecular backbone bearing phosphonate or phosphate functions, either directly attached or through side chains, said functional layer being disposed between at least one of the respective electrodes and said one or more electro-active materials in the device.
摘要翻译：有机电子器件由夹在电极之间的一种或多种电活性有机或聚合物材料组成。在这种装置中的关键是电极和聚合物之间的界面，其中可能产生对装置的正常功能有害的降解或化学反应产物。这通过引入由一种或多种由含有膦酸酯或磷酸酯官能团的分子骨架组成的材料构成的功能性夹层来解决，直接连接或通过侧链，所述功能层设置在至少一个相应的电极之间，更多的电活性材料在设备中。

5. 发明申请

US20070103960A1 Method for operating a data storage apparatus employing passive matrix addressing 失效
标题翻译：用于操作采用无源矩阵寻址的数据存储装置的方法
公开(公告)号：US20070103960A1
公开(公告)日：2007-05-10
申请号：US10579968
申请日：2004-11-24
申请人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gudesen
发明人： Per Hamberg , Christer Karlsson , Per-Erik Nordal , Nicklas Ojakangas , Johan Carlsson , Hans Gudesen
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

6. 发明申请

US20050151176A1 Memory cell 失效
标题翻译：存储单元
公开(公告)号：US20050151176A1
公开(公告)日：2005-07-14
申请号：US10504860
申请日：2003-02-11
申请人： Hans Gudesen , Per-Erik Nordal
发明人： Hans Gudesen , Per-Erik Nordal
IPC分类号： H01L27/105 , G11C11/22 , H01L21/8246 , H01L27/115 , H01L29/861 , H01L31/119
CPC分类号： H01L29/8615 , B82Y10/00 , G11C11/22 , H01L27/11502
摘要： In a ferroelectret or electret memory cell a polymeric memory material is a blend of two or more ploymeric materials, the polymeric material being provided contacting first and second electrodes. Each electrode is a composite multilayer comprising a first highly conducting layer and a conducting polymer layer, the latter forming a contact between the former and the memory material.
摘要翻译：在铁电或驻极体记忆单元中，聚合物记忆材料是两种或更多种聚合物材料的混合物，所述聚合材料与第一和第二电极接触。每个电极是包含第一高导电层和导电聚合物层的复合多层，后者形成前者和记忆材料之间的接触。

7. 发明申请

US20060160251A1 Method in the fabrication of a memory device 审中-公开
标题翻译：存储器件的制造方法
公开(公告)号：US20060160251A1
公开(公告)日：2006-07-20
申请号：US11319383
申请日：2005-12-29
申请人： Peter Dyreklev , Anders Hagerstrom , Hans Gudesen , Per-Erik Nordal , Olle Hagel
发明人： Peter Dyreklev , Anders Hagerstrom , Hans Gudesen , Per-Erik Nordal , Olle Hagel
IPC分类号： H01L21/00 , H01L21/8242
CPC分类号： G11C11/22 , H01L24/48 , H01L27/11502 , H01L2224/05599 , H01L2224/48463 , H01L2224/85399 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： In a method for fabricating a memory device based on an electrically polarizable memory material in the form of an electret or ferroelectric material, the memory device comprises one or more layers with circuit structures provided exclusively or partially in a printing process. At least one protective interlayer is provided between at least two layers in the memory device, said protective interlayer exhibiting low solubility as well as low permeability for any solvents employed in the deposition of the other layers in the device. Use in fabricating a memory device, particularly a passive matrix-addressable memory device with an electret or ferroelectric memory material.
摘要翻译：在基于驻极体或铁电材料形式的电可极化存储材料制造存储器件的方法中，存储器件包括一个或多个层，其具有专门或部分地在印刷过程中提供的电路结构。在存储装置中的至少两层之间提供至少一个保护性中间层，所述保护性中间层对于在装置中沉积其它层的任何溶剂都表现出低溶解度以及低渗透性。用于制造存储器件，特别是具有驻极体或铁电存储材料的无源矩阵寻址存储器件。

8. 发明申请

US20060002171A1 Bimodal operation of ferroelectric and electret memory cells and devices 失效
标题翻译：铁电和驻极体存储器单元和器件的双峰操作
公开(公告)号：US20060002171A1
公开(公告)日：2006-01-05
申请号：US11105350
申请日：2005-04-14
申请人： Hans Gudesen , Geirr Leistad , Isak Engquist , Goran Gustafsson
发明人： Hans Gudesen , Geirr Leistad , Isak Engquist , Goran Gustafsson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

9. 发明申请

US20050058010A1 Addressing of memory matrix 有权
标题翻译：存储矩阵的寻址
公开(公告)号：US20050058010A1
公开(公告)日：2005-03-17
申请号：US10934573
申请日：2004-09-07
申请人： Michael Thompson , Per-Erik Nordal , Hans Gudesen , Johan Carlsson , Goran Gustafsson
发明人： Michael Thompson , Per-Erik Nordal , Hans Gudesen , Johan Carlsson , Goran Gustafsson
IPC分类号： G02F1/133 , G09G3/20 , G09G3/36 , G11C7/06 , G11C7/10 , G11C8/18 , G11C11/22 , G11C8/02
CPC分类号： G11C11/22 , G09G3/20 , G09G3/3629 , G09G2300/06 , G09G2310/0251 , G09G2320/0209 , G11C7/06 , G11C7/1006 , G11C8/18
摘要： A method of driving a passive matrix display or memory array of cells comprising an electrically polarizable material exhibiting hysteresis, in particular a ferroelectric material, wherein the polarization state of individual cells can be switched by application of electric potentials or voltages to word and bit lines in the matrix or array.
摘要翻译：驱动单元的无源矩阵显示器或存储器阵列的方法，该阵列包括具有磁滞的电可极化材料，特别是铁电材料，其中可以通过将电位或电压施加到字和位线来切换各个单元的极化状态，矩阵或阵列。

10. 发明申请

US20060046344A1 Organic electronic circuit and method for making the same 失效
标题翻译：有机电子电路及其制作方法
公开(公告)号：US20060046344A1
公开(公告)日：2006-03-02
申请号：US11185861
申请日：2005-07-21
申请人： Rickard Liljedahl , Mats Sandberg , Goran Gustafsson , Hans Gudesen
发明人： Rickard Liljedahl , Mats Sandberg , Goran Gustafsson , Hans Gudesen
IPC分类号： H01L51/40
CPC分类号： G11C11/22 , B82Y10/00
摘要： In an organic electronic circuit (C), particularly a memory circuit with an organic ferroelectric or electret material (2) the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via a first and a second electrode. At least one of these electrodes (1a, 1b) comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits (C) of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold. A method in the fabrication of the organic electronic circuit (C) the method comprises steps for depositing a layer of gold as at least one layer of at least one electrode and treating an exposed surface of this layer chemically, whereafter the layer of active material can be deposited on the top of the processed surface of this electrode.
摘要翻译：在有机电子电路（C）中，特别是具有有机铁电或驻极体材料的存储电路（2），活性材料包含氟原子并由各种有机材料组成。活性材料位于第一电极和第二电极之间。具有电容器状结构的电池被限定在活性材料中，并且可以经由第一和第二电极进行寻址操作。这些电极（1a，1b）中的至少一个包括化学改性金层。在无源矩阵寻址电子器件中，特别是铁电或驻极体存储器件中，具有作为铁电或驻极体存储器材料的活性材料的这种电路（C）形成矩阵寻址阵列的元件，并且限定提供的存储器单元在第一和第二组寻址电极之间。至少所述组中的至少一个的电极至少包括一层金。有机电子电路（C）的制造方法包括以下步骤：将金层沉积为至少一层至少一个电极，并化学处理该层的暴露表面，此后活性材料层可以沉积在该电极的被处理表面的顶部。

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