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1. 发明申请

US20050242343A1 Organic electronic circuit with functional interlayer, and method for making the same 审中-公开
标题翻译：具有功能性夹层的有机电子线路及其制造方法
公开(公告)号：US20050242343A1
公开(公告)日：2005-11-03
申请号：US11115242
申请日：2005-04-27
申请人： Niclas Edvardsson , Isak Engquist , Mats Johansson
发明人： Niclas Edvardsson , Isak Engquist , Mats Johansson
IPC分类号： G11C20060101 , G11C11/22 , H01L21/02 , H01L29/08 , H01L51/10
CPC分类号： H01L28/40 , G11C11/22
摘要： An organic electronic circuit (C) with improved performance, particularly at elevated temperatures, comprises an organic electret or ferroelectric material (2) provided between a first electrode (1a) and a second electrode (1b). A cell with a capacitor-like structure is defined in the organic electret or ferroelectric material (2) and can be accessed electrically directly or indirectly via the electrodes. At least one functional interlayer (3a; 3b) is provided between one of the electrodes (1a; 1b) and the organic electret or ferroelectric material (2). The interlayer material is inorganic, non-conducting and substantially inert relative to the organic electret or ferroelectric material (2) in general. Typically the interlayer (3) is inert relative to the organic electret or ferroelectric material (2) particularly when the latter is a fluorine-containing material. A plurality of circuits (C) is used for forming a matrix-addressable array.—The interlayer is deposited as molecular species from a source of functional interlayer material without dissociation of individual interlayer molecules.
摘要翻译：具有改进性能的有机电子电路（C），特别是在高温下，包括设置在第一电极（1a）和第二电极（1b）之间的有机驻极体或铁电材料（2）。具有电容器状结构的电池被限定在有机驻极体或铁电材料（2）中，并且可以通过电极直接或间接地访问。在一个电极（1a，1b）和有机驻极体或铁电材料（2）之间提供至少一个功能性中间层（3a; 3b）。中间层材料通常相对于有机驻极体或铁电材料（2）是无机的，不导电的和基本上是惰性的。通常，中间层（3）相对于有机驻极体或铁电材料（2）是惰性的，特别是当后者是含氟材料时。多个电路（C）用于形成矩阵寻址阵列。中间层作为分子物质从功能性中间层材料源沉积而不分离各层间分子。

2. 发明申请

US20060002171A1 Bimodal operation of ferroelectric and electret memory cells and devices 失效
标题翻译：铁电和驻极体存储器单元和器件的双峰操作
公开(公告)号：US20060002171A1
公开(公告)日：2006-01-05
申请号：US11105350
申请日：2005-04-14
申请人： Hans Gudesen , Geirr Leistad , Isak Engquist , Goran Gustafsson
发明人： Hans Gudesen , Geirr Leistad , Isak Engquist , Goran Gustafsson
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

3. 发明授权

US07266008B2 Bimodal operation of ferroelectric and electret memory cells and devices 失效
标题翻译：铁电和驻极体存储器单元和器件的双峰操作
公开(公告)号：US07266008B2
公开(公告)日：2007-09-04
申请号：US11105350
申请日：2005-04-14
申请人： Hans Gude Gudesen , Geirr I Leistad , Isak Engquist , Göran Gustafsson
发明人： Hans Gude Gudesen , Geirr I Leistad , Isak Engquist , Göran Gustafsson
IPC分类号： G11C7/00
CPC分类号： G11C11/22
摘要： In a method for enhancing the data storage capability of ferroelectric or electret memory cell which has been applied to storage of data and attained an imprint condition, suitable voltage pulses are used for evoking a temporary relaxation of the imprint condition into a volatile polarization state that can be discriminated from the imprinted polarization state in a non-destructive readout operation. Sequences of one or more voltage pulses are used to evoke readout signals respectively indicative of a non-volatile and a volatile polarization state of the memory cell, but without altering said polarization states. Imprinted memory cells can be overwritten to effect a temporary and volatile storage of data in a memory device in a ferroelectric or electret memory device by assigning a first logical value to imprinted memory cells and a second logical value by transferring selected to memory cells transferred into a relaxed volatile state, whereby the stored logical values can be discriminated by the detecting the difference in dynamic response of respectively imprinted and relaxed memory cells.
摘要翻译：在用于增强已经应用于数据存储和达到印记条件的铁电或驻极体存储单元的数据存储能力的方法中，使用适当的电压脉冲来引起压印条件的暂时放宽到易挥发的极化状态，在非破坏性读出操作中与印刻偏振状态区分开来。使用一个或多个电压脉冲的序列来唤起分别指示存储器单元的非易失性和易失性极化状态但不改变所述极化状态的读出信号。印刷的存储器单元可以被覆盖，以通过将所选择的第一逻辑值分配给压印存储器单元并将所转移的存储器单元传送到第二逻辑值来实现在铁电或驻极体存储器件中的存储器件中的数据的临时和易失性存储轻松的挥发性状态，由此可以通过检测分别压印和放松的存储单元的动态响应的差异来区分所存储的逻辑值。

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