专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080061057A1 Method and Apparatus For The Contamination-Free Heating Of Gases 有权
标题翻译：气体无污染加热的方法和装置
公开(公告)号：US20080061057A1
公开(公告)日：2008-03-13
申请号：US11852613
申请日：2007-09-10
申请人： Paul Fuchs , Dieter Weidhaus
发明人： Paul Fuchs , Dieter Weidhaus
IPC分类号： H05B6/64
CPC分类号： B01J8/1836 , B01J2208/0046
摘要： A method for the contamination-free heating of a highly pure gas to a temperature of from 300 to 1200° C. involves passing the highly pure gas at a pressure of from 0.1 to 10 bar abs. over a highly pure solid which does not contaminate the gas, the solid being present in a highly pure container whose wall consists of a material which has a transparency of more than 85% for infrared rays and the container being irradiated by means of the infrared rays, the solid being heated thereby and the solid heating the gas.
摘要翻译：将高纯度气体无污染加热至300至1200℃的方法包括使高纯度气体以0.1至10巴绝对的压力通过。在不污染气体的高纯度固体上，固体存在于高纯度容器中，该容器的壁由红外线透明度高于85％的材料组成，容器通过红外线照射，固体被加热，固体加热气体。

2. 发明授权

US08975563B2 Method and apparatus for the contamination-free heating of gases 有权
标题翻译：用于无污染加热气体的方法和设备
公开(公告)号：US08975563B2
公开(公告)日：2015-03-10
申请号：US11852613
申请日：2007-09-10
申请人： Paul Fuchs , Dieter Weidhaus
发明人： Paul Fuchs , Dieter Weidhaus
IPC分类号： H05B6/64 , B01J8/18
CPC分类号： B01J8/1836 , B01J2208/0046
摘要： A method for the contamination-free heating of a highly pure gas to a temperature of from 300 to 1200° C. involves passing the highly pure gas at a pressure of from 0.1 to 10 bar abs. over a highly pure solid which does not contaminate the gas, the solid being present in a highly pure container whose wall consists of a material which has a transparency of more than 85% for infrared rays and the container being irradiated by means of the infrared rays, the solid being heated thereby and the solid heating the gas.
摘要翻译：将高纯度气体无污染加热至300至1200℃的方法包括使高纯度气体以0.1至10巴绝对的压力通过。在不污染气体的高纯度固体上，固体存在于高纯度容器中，该容器的壁由红外线透明度高于85％的材料组成，容器通过红外线照射，固体被加热，固体加热气体。

3. 发明授权

US07708828B2 Dust-free and pore-free, high-purity granulated polysilicon 有权
标题翻译：无尘，无孔，高纯度的多晶硅颗粒
公开(公告)号：US07708828B2
公开(公告)日：2010-05-04
申请号：US11010525
申请日：2004-12-13
申请人： Dieter Weidhaus , Ivo Crössmann , Franz Schreieder
发明人： Dieter Weidhaus , Ivo Crössmann , Franz Schreieder
IPC分类号： C01B33/03 , C01B33/027 , C01B33/02 , C30B21/06 , C30B27/02 , C30B28/10 , B29C41/24 , B29C43/22 , B29D7/01
CPC分类号： C01B33/03 , C01B33/021 , C01B33/027 , Y10T428/2982
摘要： A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm.
摘要翻译：多晶粒状硅由密度大于理论固体密度的99.9％的颗粒制成，因此孔含量小于0.1％，表面粗糙度Ra小于150nm。

4. 发明授权

US07029632B1 Radiation-heated fluidized-bed reactor 有权
标题翻译：辐射加热流化床反应器
公开(公告)号：US07029632B1
公开(公告)日：2006-04-18
申请号：US09677347
申请日：2000-10-02
申请人： Dieter Weidhaus , Alexander Hayduk
发明人： Dieter Weidhaus , Alexander Hayduk
IPC分类号： B01J8/18
CPC分类号： B01J8/1836 , B01J8/1818 , B01J2208/00132 , B01J2208/00433 , B01J2208/00495 , C01B33/027
摘要： A radiation-heated fluidized-bed reactor and a process for producing high-purity polycrystalline silicon by using this reactor are provided. In this reactor, a heater device (14) is a radiation source for thermal radiation which is arranged outside the inner reactor tube and as a cylinder around the heater zone, without being in direct contact with the inner reactor tube. The inner reactor tube is designed in such a manner that it uses thermal radiation to heat the silicon particles in the heating zone to a temperature which is such that the reaction temperature is established in the reaction zone.
摘要翻译：提供辐射加热流化床反应器和通过使用该反应器生产高纯度多晶硅的方法。在该反应器中，加热器装置（14）是用于热辐射的辐射源，其布置在内反应器管的外侧，并且作为围绕加热器区的圆筒而不与内反应管直接接触。内反应器管被设计成使得其使用热辐射将加热区中的硅颗粒加热到使得在反应区中建立反应温度的温度。

5. 发明授权

US08722141B2 Process for the continuous production of polycrystalline high-purity silicon granules 有权
标题翻译：连续生产多晶高纯度硅颗粒的工艺
公开(公告)号：US08722141B2
公开(公告)日：2014-05-13
申请号：US12111291
申请日：2008-04-29
申请人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
发明人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
IPC分类号： B05D7/00 , B05C11/00
CPC分类号： C01B33/027
摘要： High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要翻译：通过在流化床反应器中在硅颗粒上沉积反应气体来制备高纯度多晶硅颗粒，所述反应器具有：包含至少两个位于一个上方的区域的反应器空间，通过将无硅气体引入到硅中而使其弱化的下部区域通过多个单独的稀释气体喷嘴在下部区域中的颗粒，以及直接邻接下部区域的第二反应区域，经由其向外界壁加热的反应区域，将含硅反应气体作为垂直高速气体射流引入通过反应气体喷嘴形成反应区，形成由气泡形成流化床包围的局部反应气体射流，气体分解导致颗粒生长，其中反应气体在到达壁之前完全或几乎完全与化学平衡转化反应，或床面。

6. 发明授权

US07490785B2 Process and apparatus for comminuting silicon 有权
标题翻译：粉碎硅的工艺和设备
公开(公告)号：US07490785B2
公开(公告)日：2009-02-17
申请号：US11504156
申请日：2006-08-15
申请人： Dieter Weidhaus
发明人： Dieter Weidhaus
IPC分类号： B02C19/06
CPC分类号： C01B33/02 , B02C19/068 , B02C23/14
摘要： An apparatus for producing silicon seed particles having a size of from 50 μm to 1000 μm from silicon granules having a size of from 300 μm to 5000 μm, comprising a vertically disposed jet chamber with a low cross sectional area and a jet nozzle at the base of the jet chamber through which a milling gas stream is introduced into the chamber; a larger cross section countercurrent gravity separator adjoining the jet chamber, and an inlet for silicon granules, wherein the jet chamber has a length sufficient to allow the milling gas stream to widen to the cross section of the jet chamber.
摘要翻译：一种从尺寸为300μm至5000μm的硅颗粒生产尺寸为50μm至1000μm的硅种子颗粒的装置，包括垂直设置的具有低截面面积的喷射室和在基座处的喷嘴所述喷射室通过所述喷射室将研磨气流引入所述室中; 邻接喷射室的较大的横截面逆流重力分离器和用于硅颗粒的入口，其中喷射室具有足以允许研磨气流扩大到喷射室的横截面的长度。

7. 发明申请

US20080299291A1 Process For The Continuous Production Of Polycrystalline High-Purity Silicon Granules 有权
标题翻译：多晶高纯度硅颗粒连续生产工艺
公开(公告)号：US20080299291A1
公开(公告)日：2008-12-04
申请号：US12111291
申请日：2008-04-29
申请人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
发明人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
IPC分类号： B05D1/00 , B05D7/00
CPC分类号： C01B33/027
摘要： High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要翻译：通过在流化床反应器中在硅颗粒上沉积反应气体来制备高纯度多晶硅颗粒，所述反应器具有：包含至少两个位于一个上方的区域的反应器空间，通过将无硅气体引入到硅中而使其弱化的下部区域通过多个单独的稀释气体喷嘴在下部区域中的颗粒，以及直接邻接下部区域的第二反应区域，经由其向外界壁加热的反应区域，将含硅反应气体作为垂直高速气体射流引入通过反应气体喷嘴形成反应区，形成由气泡形成流化床包围的局部反应气体射流，气体分解导致颗粒生长，其中反应气体在到达壁之前完全或几乎完全与化学平衡转化反应，或床面。

8. 发明申请

US20070040056A1 Process and apparatus for comminuting silicon 有权
标题翻译：粉碎硅的工艺和设备
公开(公告)号：US20070040056A1
公开(公告)日：2007-02-22
申请号：US11504156
申请日：2006-08-15
申请人： Dieter Weidhaus
发明人： Dieter Weidhaus
IPC分类号： B02C19/06
CPC分类号： C01B33/02 , B02C19/068 , B02C23/14
摘要： An apparatus for producing silicon seed particles having a size of from 50 μm to 1000 μm from silicon granules having a size of from 300 μm to 5000 μm, comprising a vertically disposed jet chamber with a low cross sectional area and a jet nozzle at the base of the jet chamber through which a milling gas stream is introduced into the chamber; a larger cross section countercurrent gravity separator adjoining the jet chamber, and an inlet for silicon granules, wherein the jet chamber has a length sufficient to allow the milling gas stream to widen to the cross section of the jet chamber.
摘要翻译：一种从尺寸为300μm至5000μm的硅颗粒生产尺寸为50μm至1000μm的硅种子颗粒的装置，包括垂直设置的具有低截面面积的喷射室和在基座处的喷嘴所述喷射室通过所述喷射室将研磨气流引入所述室中; 邻接喷射室的较大的横截面逆流重力分离器和用于硅颗粒的入口，其中喷射室具有足以允许研磨气流扩大到喷射室的横截面的长度。

9. 发明申请

US20050135986A1 Dust-free and pore-free, high-purity granulated polysilicon 有权
标题翻译：无尘，无孔，高纯度的多晶硅颗粒
公开(公告)号：US20050135986A1
公开(公告)日：2005-06-23
申请号：US11010525
申请日：2004-12-13
申请人： Dieter Weidhaus , Ivo Crossmann , Franz Schreieder
发明人： Dieter Weidhaus , Ivo Crossmann , Franz Schreieder
IPC分类号： C01B33/02 , C01B33/021 , C01B33/027 , C01B33/03
CPC分类号： C01B33/03 , C01B33/021 , C01B33/027 , Y10T428/2982
摘要： A polycrystalline granulated silicon is made of particles which have a density of greater than 99.9% of the theoretical solid density and therefore have a pore content of less than 0.1% and have a surface roughness Ra of less than 150 nm.
摘要翻译：多晶粒状硅由具有大于理论固体密度的99.9％的密度的颗粒制成，因此具有小于0.1％的孔含量并且表面粗糙度R a a小于 150nm。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式