专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08802046B2 Granular polycrystalline silicon and production thereof 有权
标题翻译：颗粒状多晶硅及其生产
公开(公告)号：US08802046B2
公开(公告)日：2014-08-12
申请号：US13861950
申请日：2013-04-12
申请人： Dirk Weckesser , Rainer Hauswirth
发明人： Dirk Weckesser , Rainer Hauswirth
IPC分类号： C01B33/02 , C01B33/027
CPC分类号： C01B33/027 , Y10T428/2982
摘要： Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.
摘要翻译：公开了颗粒状多晶硅，其具有0.850-1.000的凸度和10-40ppmw的氯含量。还公开了一种在流化床反应器中生产颗粒状多晶硅的方法，其包括：（a）通过在由加热装置加热的流化床中的气流流化硅种子颗粒，（b）加入硅和卤素（c）形成颗粒状多晶硅，（d）从反应器中除去含有卤化氢的颗粒和废气，（e）计量加入新鲜的种子颗粒。废气中的卤化氢浓度确定为受控变量。新鲜种子颗粒的计量添加速率和加热装置的加热输出被控制为操作变量，以在操作期间将废气中的卤化氢浓度保持在上述范围内。

2. 发明申请

US20080241046A1 Method and Device for Producing Granulated Polycrystalline Silicon in a Fluidized Bed Reactor 有权
标题翻译：在流化床反应器中生产颗粒状多晶硅的方法和装置
公开(公告)号：US20080241046A1
公开(公告)日：2008-10-02
申请号：US12065790
申请日：2006-09-04
申请人： Harald Hertlein , Rainer Hauswirth
发明人： Harald Hertlein , Rainer Hauswirth
IPC分类号： C01B33/02 , F27B15/14
CPC分类号： C01B33/03 , C01B33/027 , C01B33/029
摘要： A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized.
摘要翻译：用于生产多晶硅颗粒的流化床方法除了反应气体外还提供含有99.5至95mol的气体。百分数氢和0.5至5摩尔。％的气态硅化合物，并且反应器壁保持在与反应区相同或更高的温度，使得硅在反应器内部上的沉积最小化。

3. 发明授权

US08722141B2 Process for the continuous production of polycrystalline high-purity silicon granules 有权
标题翻译：连续生产多晶高纯度硅颗粒的工艺
公开(公告)号：US08722141B2
公开(公告)日：2014-05-13
申请号：US12111291
申请日：2008-04-29
申请人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
发明人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
IPC分类号： B05D7/00 , B05C11/00
CPC分类号： C01B33/027
摘要： High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要翻译：通过在流化床反应器中在硅颗粒上沉积反应气体来制备高纯度多晶硅颗粒，所述反应器具有：包含至少两个位于一个上方的区域的反应器空间，通过将无硅气体引入到硅中而使其弱化的下部区域通过多个单独的稀释气体喷嘴在下部区域中的颗粒，以及直接邻接下部区域的第二反应区域，经由其向外界壁加热的反应区域，将含硅反应气体作为垂直高速气体射流引入通过反应气体喷嘴形成反应区，形成由气泡形成流化床包围的局部反应气体射流，气体分解导致颗粒生长，其中反应气体在到达壁之前完全或几乎完全与化学平衡转化反应，或床面。

4. 发明申请

US20130280533A1 GRANULAR POLYCRYSTALLINE SILICON AND PRODUCTION THEREOF 有权
标题翻译：颗粒状多晶硅及其生产
公开(公告)号：US20130280533A1
公开(公告)日：2013-10-24
申请号：US13861950
申请日：2013-04-12
申请人： Dirk WECKESSER , Rainer HAUSWIRTH
发明人： Dirk WECKESSER , Rainer HAUSWIRTH
IPC分类号： C01B33/027
CPC分类号： C01B33/027 , Y10T428/2982
摘要： Granular polycrystalline silicon is disclosed, which has a convexity of 0.850-1.000 and a chlorine content of 10-40 ppmw. Also disclosed is a process for producing granular polycrystalline silicon in a fluidized bed reactor, which includes: (a) fluidization of silicon seed particles by gas flow in a fluidized bed heated by a heating apparatus, (b) addition of a silicon- and halogen-containing reaction gas resulting in pyrolytic deposition of elemental silicon on heated seed particle surfaces, (c) forming the granular polycrystalline silicon, (d) removing from the reactor particles and offgas containing hydrogen halide, and (e) metered addition of fresh seed particles. The hydrogen halide concentration in the offgas is determined as the controlled variable. The rate of metered addition of fresh seed particles and heating output of the heating apparatus are controlled as manipulated variables to keep the hydrogen halide concentration in the offgas within an above-defined range during operation.
摘要翻译：公开了颗粒状多晶硅，其具有0.850-1.000的凸度和10-40ppmw的氯含量。还公开了一种在流化床反应器中生产颗粒状多晶硅的方法，其包括：（a）通过在由加热装置加热的流化床中的气流流化硅种子颗粒，（b）加入硅和卤素（c）形成颗粒状多晶硅，（d）从反应器中除去含有卤化氢的颗粒和废气，（e）计量加入新鲜的种子颗粒。废气中的卤化氢浓度确定为受控变量。新鲜种子颗粒的计量添加速率和加热装置的加热输出被控制为操作变量，以在操作期间将废气中的卤化氢浓度保持在上述范围内。

5. 发明申请

US20080299291A1 Process For The Continuous Production Of Polycrystalline High-Purity Silicon Granules 有权
标题翻译：多晶高纯度硅颗粒连续生产工艺
公开(公告)号：US20080299291A1
公开(公告)日：2008-12-04
申请号：US12111291
申请日：2008-04-29
申请人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
发明人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
IPC分类号： B05D1/00 , B05D7/00
CPC分类号： C01B33/027
摘要： High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要翻译：通过在流化床反应器中在硅颗粒上沉积反应气体来制备高纯度多晶硅颗粒，所述反应器具有：包含至少两个位于一个上方的区域的反应器空间，通过将无硅气体引入到硅中而使其弱化的下部区域通过多个单独的稀释气体喷嘴在下部区域中的颗粒，以及直接邻接下部区域的第二反应区域，经由其向外界壁加热的反应区域，将含硅反应气体作为垂直高速气体射流引入通过反应气体喷嘴形成反应区，形成由气泡形成流化床包围的局部反应气体射流，气体分解导致颗粒生长，其中反应气体在到达壁之前完全或几乎完全与化学平衡转化反应，或床面。

6. 发明授权

US07922990B2 Method and device for producing granulated polycrystalline silicon in a fluidized bed reactor 有权
标题翻译：在流化床反应器中生产粒状多晶硅的方法和装置
公开(公告)号：US07922990B2
公开(公告)日：2011-04-12
申请号：US12065790
申请日：2006-09-04
申请人： Harald Hertlein , Rainer Hauswirth
发明人： Harald Hertlein , Rainer Hauswirth
IPC分类号： C01B33/02
CPC分类号： C01B33/03 , C01B33/027 , C01B33/029
摘要： A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized.
摘要翻译：用于生产多晶硅颗粒的流化床方法除了反应气体外还提供含有99.5至95mol的气体。百分数氢和0.5至5摩尔。％的气态硅化合物，并且反应器壁保持在与反应区相同或更高的温度，使得硅在反应器内部上的沉积最小化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式