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1. 发明申请

US20080299291A1 Process For The Continuous Production Of Polycrystalline High-Purity Silicon Granules 有权
标题翻译：多晶高纯度硅颗粒连续生产工艺
公开(公告)号：US20080299291A1
公开(公告)日：2008-12-04
申请号：US12111291
申请日：2008-04-29
申请人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
发明人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
IPC分类号： B05D1/00 , B05D7/00
CPC分类号： C01B33/027
摘要： High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要翻译：通过在流化床反应器中在硅颗粒上沉积反应气体来制备高纯度多晶硅颗粒，所述反应器具有：包含至少两个位于一个上方的区域的反应器空间，通过将无硅气体引入到硅中而使其弱化的下部区域通过多个单独的稀释气体喷嘴在下部区域中的颗粒，以及直接邻接下部区域的第二反应区域，经由其向外界壁加热的反应区域，将含硅反应气体作为垂直高速气体射流引入通过反应气体喷嘴形成反应区，形成由气泡形成流化床包围的局部反应气体射流，气体分解导致颗粒生长，其中反应气体在到达壁之前完全或几乎完全与化学平衡转化反应，或床面。

2. 发明授权

US08722141B2 Process for the continuous production of polycrystalline high-purity silicon granules 有权
标题翻译：连续生产多晶高纯度硅颗粒的工艺
公开(公告)号：US08722141B2
公开(公告)日：2014-05-13
申请号：US12111291
申请日：2008-04-29
申请人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
发明人： Dieter Weidhaus , Rainer Hauswirth , Harald Hertlein
IPC分类号： B05D7/00 , B05C11/00
CPC分类号： C01B33/027
摘要： High-purity polysilicon granules are prepared by depositing reaction gas on silicon granules in a fluidized bed reactor having: a reactor space comprising at least two zones lying one above the other, the lower zone weakly fluidized by introduction of a silicon-free gas into silicon granules in the lower zone by a plurality of individual dilution gas nozzles, and a second, reaction zone directly abutting the lower zone, the reaction zone heated via its outwardly bounding wall, introducing silicon-containing reaction gas as a vertical high speed gas jet into the reaction zone by reaction gas nozzle(s), forming local reaction gas jets surrounded by bubble-forming fluidized bed, gas decomposing leading to particle growth, wherein the reaction gas has fully or almost fully reacted to chemical equilibrium conversion before reaching the wall or bed surface.
摘要翻译：通过在流化床反应器中在硅颗粒上沉积反应气体来制备高纯度多晶硅颗粒，所述反应器具有：包含至少两个位于一个上方的区域的反应器空间，通过将无硅气体引入到硅中而使其弱化的下部区域通过多个单独的稀释气体喷嘴在下部区域中的颗粒，以及直接邻接下部区域的第二反应区域，经由其向外界壁加热的反应区域，将含硅反应气体作为垂直高速气体射流引入通过反应气体喷嘴形成反应区，形成由气泡形成流化床包围的局部反应气体射流，气体分解导致颗粒生长，其中反应气体在到达壁之前完全或几乎完全与化学平衡转化反应，或床面。

3. 发明授权

US07922990B2 Method and device for producing granulated polycrystalline silicon in a fluidized bed reactor 有权
标题翻译：在流化床反应器中生产粒状多晶硅的方法和装置
公开(公告)号：US07922990B2
公开(公告)日：2011-04-12
申请号：US12065790
申请日：2006-09-04
申请人： Harald Hertlein , Rainer Hauswirth
发明人： Harald Hertlein , Rainer Hauswirth
IPC分类号： C01B33/02
CPC分类号： C01B33/03 , C01B33/027 , C01B33/029
摘要： A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized.
摘要翻译：用于生产多晶硅颗粒的流化床方法除了反应气体外还提供含有99.5至95mol的气体。百分数氢和0.5至5摩尔。％的气态硅化合物，并且反应器壁保持在与反应区相同或更高的温度，使得硅在反应器内部上的沉积最小化。

4. 发明申请

US20080241046A1 Method and Device for Producing Granulated Polycrystalline Silicon in a Fluidized Bed Reactor 有权
标题翻译：在流化床反应器中生产颗粒状多晶硅的方法和装置
公开(公告)号：US20080241046A1
公开(公告)日：2008-10-02
申请号：US12065790
申请日：2006-09-04
申请人： Harald Hertlein , Rainer Hauswirth
发明人： Harald Hertlein , Rainer Hauswirth
IPC分类号： C01B33/02 , F27B15/14
CPC分类号： C01B33/03 , C01B33/027 , C01B33/029
摘要： A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized.
摘要翻译：用于生产多晶硅颗粒的流化床方法除了反应气体外还提供含有99.5至95mol的气体。百分数氢和0.5至5摩尔。％的气态硅化合物，并且反应器壁保持在与反应区相同或更高的温度，使得硅在反应器内部上的沉积最小化。

5. 发明授权

US06639192B2 Deposition device for depositing semiconductor material on a heated substrate 有权
标题翻译：用于在加热的衬底上沉积半导体材料的沉积装置
公开(公告)号：US06639192B2
公开(公告)日：2003-10-28
申请号：US10042801
申请日：2002-01-09
申请人： Harald Hertlein , Karl Hesse , Axel Frauenknecht
发明人： Harald Hertlein , Karl Hesse , Axel Frauenknecht
IPC分类号： H05B308
CPC分类号： C01B33/035
摘要： A device is provided for depositing semiconductor material on a heated substrate body, having a stationary current leadthrough, which is guided through the baseplate of the deposition device. This is an electrode mount with an underside, which is arranged above the current leadthrough, and an upper side, which is connected to a carbon electrode into which a substrate body can be fitted. The carbon electrode has a thermal conductivity of >145 W/m*K and a coefficient of thermal expansion which is matched to the coefficient of thermal expansion of silicon.
摘要翻译：提供了一种用于在加热的基板主体上沉积半导体材料的装置，其具有固定的电流引线，其被引导通过沉积装置的基板。这是具有下侧的电极安装件，其设置在电流引线上方，并且上侧连接到能够安装基板主体的碳电极。碳电极具有> 145W / m×K的热导率和与硅的热膨胀系数相匹配的热膨胀系数。

6. 发明申请

US20100219380A1 POLYCRYSTALLINE SILICON AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：多晶硅及其生产方法
公开(公告)号：US20100219380A1
公开(公告)日：2010-09-02
申请号：US12680322
申请日：2008-09-22
申请人： Harald Hertlein , Oliver Kraetzschmar
发明人： Harald Hertlein , Oliver Kraetzschmar
IPC分类号： H01B1/04 , C23C16/24 , C23C16/44 , C01B33/00
CPC分类号： C01B33/035 , Y10T428/2982
摘要： Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.
摘要翻译：具有80-99％的棒状横截面可用于导电和0.1至80N / mm 2的弯曲强度的脆性多晶硅棒通过其中西门子方法中的多晶硅棒桥的温度保持在高温和氯硅烷的流速在短时间内增加到最大值。棒以较低的力容易地分裂，导致多晶硅具有低水平的金属杂质。

7. 发明授权

US08398946B2 Polycrystalline silicon and method for the production thereof 有权
标题翻译：多晶硅及其制造方法
公开(公告)号：US08398946B2
公开(公告)日：2013-03-19
申请号：US12680322
申请日：2008-09-22
申请人： Harald Hertlein , Oliver Kraetzschmar
发明人： Harald Hertlein , Oliver Kraetzschmar
IPC分类号： C01B33/00
CPC分类号： C01B33/035 , Y10T428/2982
摘要： Brittle polysilicon rods having a rod cross-section of 80-99% available for electrical conduction and a flexural strength of 0.1 to 80 N/mm2 are produced by a process wherein the temperature of the bridge of polysilicon rods in the Siemens process is held at a high temperature and the flow rate of chlorosilanes is increased to the maximum within a short time. The rods are easily fragmented with low force, resulting in polysilicon with a low level of metallic impurities.
摘要翻译：具有80-99％的棒状横截面可用于导电和0.1至80N / mm 2的弯曲强度的脆性多晶硅棒通过其中西门子方法中的多晶硅棒桥的温度保持在高温和氯硅烷的流速在短时间内增加到最大值。棒以较低的力容易地分裂，导致多晶硅具有低水平的金属杂质。

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