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    • 4. 发明授权
    • Detector for alpha particle or cosmic ray
    • α粒子或宇宙射线探测器
    • US07057180B2
    • 2006-06-06
    • US10604416
    • 2003-07-18
    • John A. FifieldPaul D. KartschokeWilliam A. KlaasenStephen V. KosonockyRandy W. MannJeffery H. OppoldNorman J. Rohrer
    • John A. FifieldPaul D. KartschokeWilliam A. KlaasenStephen V. KosonockyRandy W. MannJeffery H. OppoldNorman J. Rohrer
    • G01T1/24
    • G11C11/4125
    • A detector circuit and method for detecting a silicon well voltage or current to indicate an alpha particle or cosmic ray strike of the silicon well. One significant application for the detection circuit of the present invention is for the redundancy repair latches that are used in SRAMs. The redundancy repair latches are normally written once at power-up to record failed latch data and are not normally written again. If one of the latches changes states due to an SER (Soft Error Rate-such as a strike by an alpha particle or cosmic ray) event, the repair data in the redundancy latches of the SRAM would now be incorrectly mapped. The detector circuit and method monitors the latches for the occurrence of an SER event, and responsive thereto issues a reload of the repair data to the redundancy repair latches. A first embodiment of the detector circuit differentially detects the floating voltages of first and second silicon wells during periods of non-operation of the circuits fabricated in the first and second silicon wells. In a second embodiment, a detector circuit monitors the background voltage level of a single silicon well over first and second consecutive periods of time. A second application for the detection circuit is for traditional logic circuits.
    • 一种用于检测硅阱电压或电流以指示硅阱的α粒子或宇宙射线冲击的检测器电路和方法。 本发明的检测电路的一个重要应用是用于SRAM中的冗余修复锁存器。 冗余修复锁存器在上电时通常写入一次,以记录失败的锁存数据,并且通常不会再次写入。 如果其中一个锁存器由于SER(软错误率(例如α粒子或宇宙射线的击穿))事件而改变状态,则SRAM的冗余锁存器中的修复数据现在将被错误地映射。 检测器电路和方法监视锁存器以发生SER事件,并且响应于此,将修复数据重新加载到冗余修复锁存器。 检测器电路的第一实施例在第一和第二硅阱中制造的电路的非操作期间差分地检测第一和第二硅阱的浮置电压。 在第二实施例中,检测器电路在第一和第二连续时间段内监测单个硅阱的背景电压电平。 检测电路的第二个应用是传统的逻辑电路。
    • 8. 发明授权
    • Method and apparatus for reducing charge sharing and the bipolar effect in stacked SOI circuits
    • 用于降低堆叠SOI电路中的电荷共享和双极效应的方法和装置
    • US06201425B1
    • 2001-03-13
    • US09236930
    • 1999-01-25
    • Paul D. KartschokeNorman J. Rohrer
    • Paul D. KartschokeNorman J. Rohrer
    • H03K30233
    • H03K19/0963
    • A top clock stacked circuit is provided that substantially prevents charge sharing and that prevents any deleterious bipolar effect. The top clock stacked circuit comprises a primary pre-charge circuit coupled to a primary node, a first device coupled between the primary node and a first secondary node, and a second device coupled between the first secondary node and a second secondary node. A second pre-charge circuit is coupled to the first secondary node and a pre-discharge circuit is coupled to the second secondary node. In response to a first clock polarity, the primary and the second pre-charge circuits pre-charge the primary and the first secondary nodes, respectively, and the pre-discharge circuit pre-discharges the second secondary node. Thereafter, in response to a second clock polarity, the first device creates a path between the primary node and the first secondary node. Because both nodes are pre-charged to the same voltage, charge sharing is substantially prevented. Further, because the second secondary node is pre-discharged, the second device is not susceptible to the bipolar effect.
    • 提供了顶部时钟堆叠电路,其基本上防止电荷共享并且防止任何有害的双极效应。 顶层时钟堆叠电路包括耦合到主节点的主预充电电路,耦合在主节点和第一辅助节点之间的第一设备,以及耦合在第一辅助节点和第二辅助节点之间的第二设备。 第二预充电电路耦合到第一次级节点,并且预放电电路耦合到第二辅助节点。 响应于第一时钟极性,初级和第二预充电电路分别为初级和第一级次级节点预充电,并且预放电电路预放电第二次级节点。 此后,响应于第二时钟极性,第一设备在主节点和第一辅助节点之间创建路径。 因为两个节点都被预充电到相同的电压,所以基本上防止了电荷共享。 此外,由于第二次级节点被预放电,所以第二装置不易受到双极效应的影响。