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    • 4. 发明授权
    • Detector for alpha particle or cosmic ray
    • α粒子或宇宙射线探测器
    • US07057180B2
    • 2006-06-06
    • US10604416
    • 2003-07-18
    • John A. FifieldPaul D. KartschokeWilliam A. KlaasenStephen V. KosonockyRandy W. MannJeffery H. OppoldNorman J. Rohrer
    • John A. FifieldPaul D. KartschokeWilliam A. KlaasenStephen V. KosonockyRandy W. MannJeffery H. OppoldNorman J. Rohrer
    • G01T1/24
    • G11C11/4125
    • A detector circuit and method for detecting a silicon well voltage or current to indicate an alpha particle or cosmic ray strike of the silicon well. One significant application for the detection circuit of the present invention is for the redundancy repair latches that are used in SRAMs. The redundancy repair latches are normally written once at power-up to record failed latch data and are not normally written again. If one of the latches changes states due to an SER (Soft Error Rate-such as a strike by an alpha particle or cosmic ray) event, the repair data in the redundancy latches of the SRAM would now be incorrectly mapped. The detector circuit and method monitors the latches for the occurrence of an SER event, and responsive thereto issues a reload of the repair data to the redundancy repair latches. A first embodiment of the detector circuit differentially detects the floating voltages of first and second silicon wells during periods of non-operation of the circuits fabricated in the first and second silicon wells. In a second embodiment, a detector circuit monitors the background voltage level of a single silicon well over first and second consecutive periods of time. A second application for the detection circuit is for traditional logic circuits.
    • 一种用于检测硅阱电压或电流以指示硅阱的α粒子或宇宙射线冲击的检测器电路和方法。 本发明的检测电路的一个重要应用是用于SRAM中的冗余修复锁存器。 冗余修复锁存器在上电时通常写入一次,以记录失败的锁存数据,并且通常不会再次写入。 如果其中一个锁存器由于SER(软错误率(例如α粒子或宇宙射线的击穿))事件而改变状态,则SRAM的冗余锁存器中的修复数据现在将被错误地映射。 检测器电路和方法监视锁存器以发生SER事件,并且响应于此,将修复数据重新加载到冗余修复锁存器。 检测器电路的第一实施例在第一和第二硅阱中制造的电路的非操作期间差分地检测第一和第二硅阱的浮置电压。 在第二实施例中,检测器电路在第一和第二连续时间段内监测单个硅阱的背景电压电平。 检测电路的第二个应用是传统的逻辑电路。
    • 9. 发明授权
    • Method of reducing instantaneous current draw and an integrated circuit made thereby
    • 降低瞬时电流消耗的方法和由此制成的集成电路
    • US07194714B2
    • 2007-03-20
    • US10605683
    • 2003-10-17
    • Paul D. KartschokeNorman J. Rohrer
    • Paul D. KartschokeNorman J. Rohrer
    • G06F17/50
    • G06F17/5045
    • A method utilizing available timing slack in the various timing paths of a synchronous integrated circuit to reduce the overall instantaneous current draw across the circuit. In the method, each timing path is analyzed to determine its late mode margin or its late mode margin and early mode margin. A delay is added to each timing path having a late mode margin greater than zero. Each delay effectively shifts the peak current draw for the corresponding timing path within each clock cycle so that the peaks do not occur simultaneously across all timing paths. In other embodiments, the peak overall instantaneous current draw can be further reduced by reducing the delay in some of the delayed timing paths.
    • 一种在同步集成电路的各种定时路径中利用可用的定时松弛的方法来减少整个电路上的总瞬时电流消耗。 在该方法中,分析每个定时路径以确定其延迟模式余量或其延迟模式余量和早期模式余量。 延迟增加到具有大于零的延迟模式余量的每个定时路径。 每个延迟有效地移动每个时钟周期内对应的时序路径的峰值电流消耗,使得峰值不会在所有定时路径上同时发生。 在其他实施例中,可以通过减少一些延迟定时路径中的延迟来进一步减小峰值总瞬时电流消耗。