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1. 发明授权

US09741793B2 Semiconductor device with false drain 有权
公开(公告)号：US09741793B2
公开(公告)日：2017-08-22
申请号：US13448062
申请日：2012-04-16
申请人： Patrice M. Parris , Weize Chen
发明人： Patrice M. Parris , Weize Chen
IPC分类号： H01L29/08 , H01L29/66 , H01L29/78 , H01L29/06 , H01L21/8234 , H01L27/088 , H01L29/40
CPC分类号： H01L29/0847 , H01L21/823418 , H01L27/088 , H01L29/063 , H01L29/0634 , H01L29/0653 , H01L29/402 , H01L29/66659 , H01L29/7835
摘要： An electronic apparatus includes a semiconductor substrate and first and second transistors disposed in the semiconductor substrate. The first transistor includes a channel region and a drain region adjacent the channel region. The second transistor includes a channel region, a false drain region adjacent the channel region, and a drain region electrically coupled to the channel region by a drift region such that the second transistor is configured for operation at a higher voltage level than the first transistor. The respective channel regions of the first and second transistors have a common configuration characteristic.

2. 发明授权

US09537000B2 Semiconductor device with increased safe operating area 有权
标题翻译：半导体器件安全运行区域增加
公开(公告)号：US09537000B2
公开(公告)日：2017-01-03
申请号：US13792876
申请日：2013-03-11
申请人： Weize Chen , Patrice M. Parris
发明人： Weize Chen , Patrice M. Parris
IPC分类号： H01L29/66 , H01L29/78 , H01L29/10 , H01L29/06 , H01L29/08
CPC分类号： H01L29/7816 , H01L29/0653 , H01L29/0847 , H01L29/1083 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： A semiconductor device includes a substrate having a surface, a composite body region disposed in the substrate, having a first conductivity type, and comprising a body contact region at the surface of the substrate and a well in which a channel is formed during operation, a source region disposed in the semiconductor substrate adjacent the composite body region and having a second conductivity type, and an isolation region disposed between the body contact region and the source region. The composite body region further includes a body conduction path region contiguous with and under the source region, and the body conduction path region has a higher dopant concentration level than the well.
摘要翻译：半导体器件包括具有表面的衬底，设置在衬底中的复合体区域，具有第一导电类型，并且包括在衬底的表面处的体接触区域和在操作期间形成沟道的阱，源极区域，设置在与所述复合体区域相邻并具有第二导电类型的所述半导体衬底中;以及隔离区域，设置在所述本体接触区域和所述源极区域之间。复合体区域还包括与源极区域相邻并且在源极区域附近的体导电路径区域，并且身体传导路径区域具有比阱更高的掺杂剂浓度水平。

3. 发明授权

US09231120B2 Schottky diode with leakage current control structures 有权
标题翻译：具有漏电流控制结构的肖特基二极管
公开(公告)号：US09231120B2
公开(公告)日：2016-01-05
申请号：US13537299
申请日：2012-06-29
申请人： Weize Chen , Xin Lin , Patrice M. Parris
发明人： Weize Chen , Xin Lin , Patrice M. Parris
IPC分类号： H01L29/872 , H01L29/417 , H01L29/66 , H01L29/06
CPC分类号： H01L29/872 , H01L29/0692 , H01L29/417 , H01L29/66143
摘要： A Schottky diode includes a device structure having a central portion and a plurality of fingers. Distal portions of the fingers overlie leakage current control (LCC) regions. An LCC region is relatively narrow and deep, terminating in proximity to a buried layer of like polarity. Under reverse bias, depletion regions forming in an active region lying between the buried layer and the LCC regions occupy the entire extent of the active region and thereby provide a carrier depleted wall. An analogous depletion region occurs in the active region residing between any pair of adjacent fingers. If the fingers include latitudinal oriented fingers and longitudinal oriented fingers, depletion region blockades in three different orthogonal orientations may occur. The formation of the LCC regions may include the use of a high dose, low energy phosphorous implant using an LCC implant mask and the isolation structures as an additional hard mask.
摘要翻译：肖特基二极管包括具有中心部分和多个指状物的器件结构。手指的远端覆盖泄漏电流控制（LCC）区域。 LCC区域相对较窄和深，终止于类似极性的掩埋层附近。在反向偏压下，在位于掩埋层和LCC区域之间的有源区域中形成的耗尽区域占据有源区域的整个范围，从而提供载流子耗尽的壁。类似的耗尽区发生在驻留在任何一对相邻手指之间的有源区域中。如果手指包括纬向取向的指状物和纵向取向的指状物，则可能发生三个不同正交取向的耗尽区域封锁。 LCC区域的形成可以包括使用使用LCC植入物掩模的高剂量，低能量磷植入物以及作为附加硬掩模的隔离结构。

4. 发明申请

US20150316503A1 Differential Pair Sensing Circuit Structures 有权
标题翻译：差分传感电路结构
公开(公告)号：US20150316503A1
公开(公告)日：2015-11-05
申请号：US14265622
申请日：2014-04-30
申请人： Md M. Hoque , Patrice M. Parris , Weize Chen , Richard J. De Souza
发明人： Md M. Hoque , Patrice M. Parris , Weize Chen , Richard J. De Souza
IPC分类号： G01N27/414 , H01L29/78 , H01L29/66
CPC分类号： G01N27/4148 , H01L21/28282 , H01L27/11531 , H01L29/66 , H01L29/66409 , H01L29/78 , H01L29/788
摘要： A differential pair sensing circuit (300) includes control gates (306, 316) for separately programming a reference transistor (350) and a chemically-sensitive transistor (351) to a desired threshold voltage Vt to eliminate the mismatch between the transistors in order to increase the sensitivity and/or accuracy of the sensing circuit without increasing the circuit size.
摘要翻译：差分对检测电路（300）包括用于将参考晶体管（350）和化学敏感晶体管（351）单独编程为期望阈值电压Vt的控制栅极（306,316），以消除晶体管之间的失配，以便提高感测电路的灵敏度和/或精度，而不增加电路尺寸。

5. 发明授权

US08735950B2 Tunable schottky diode with depleted conduction path 有权
标题翻译：可调肖特基二极管具有耗尽的导通路径
公开(公告)号：US08735950B2
公开(公告)日：2014-05-27
申请号：US13605357
申请日：2012-09-06
申请人： Weize Chen , Xin Lin , Patrice M. Parris
发明人： Weize Chen , Xin Lin , Patrice M. Parris
IPC分类号： H01L29/66
CPC分类号： H01L29/66893 , H01L27/0629 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/0692 , H01L29/08 , H01L29/1066 , H01L29/107 , H01L29/66143 , H01L29/872
摘要： A device includes a semiconductor substrate, first and second electrodes supported by the semiconductor substrate, laterally spaced from one another, and disposed at a surface of the semiconductor substrate to form an Ohmic contact and a Schottky junction, respectively. The device further includes a conduction path region in the semiconductor substrate, having a first conductivity type, and disposed along a conduction path between the first and second electrodes, a buried region in the semiconductor substrate having a second conductivity type and disposed below the conduction path region, and a device isolating region electrically coupled to the buried region, having the second conductivity type, and defining a lateral boundary of the device. The device isolating region is electrically coupled to the second electrode such that a voltage at the second electrode during operation is applied to the buried region to deplete the conduction path region.
摘要翻译：一种器件包括半导体衬底，由半导体衬底支撑的第一和第二电极，彼此横向间隔开，并分别设置在半导体衬底的表面以形成欧姆接触和肖特基结。该器件还包括半导体衬底中的导电通路区域，具有第一导电类型，并且沿第一和第二电极之间的导电路径设置，半导体衬底中的具有第二导电类型并设置在导电路径下方的掩埋区域以及电耦合到所述掩埋区域的器件隔离区域，具有所述第二导电类型，并且限定所述器件的横向边界。器件隔离区域电耦合到第二电极，使得在操作期间第二电极处的电压被施加到掩埋区域以耗尽导电路径区域。

6. 发明申请

US20130270606A1 Semiconductor Device with Integrated Breakdown Protection 有权
标题翻译：具有集成故障保护的半导体器件
公开(公告)号：US20130270606A1
公开(公告)日：2013-10-17
申请号：US13448994
申请日：2012-04-17
申请人： Weize Chen , Hubert M. Bode , Richard J. De Souza , Patrice M. Parris
发明人： Weize Chen , Hubert M. Bode , Richard J. De Souza , Patrice M. Parris
IPC分类号： H01L29/06 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7823 , H01L21/2253 , H01L29/0626 , H01L29/0653 , H01L29/0865 , H01L29/0882 , H01L29/1083 , H01L29/1087 , H01L29/1095 , H01L29/66659 , H01L29/66681 , H01L29/7824 , H01L29/7835
摘要： A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active area, and having a second conductivity type, a body region in the active area and having the first conductivity type, and a drain region in the active area and spaced from the body region to define a conduction path of the device, the drain region having the second conductivity type. The device isolating region and the body region are spaced from one another to establish a first breakdown voltage lower than a second breakdown voltage in the conduction path.
摘要翻译：一种器件包括具有第一导电类型的半导体衬底，半导体衬底中的器件隔离区，限定有源区，并具有第二导电类型，有源区中的体区，并具有第一导电类型，漏极区域，并且与身体区域间隔开以限定器件的导电路径，漏极区域具有第二导电类型。器件隔离区域和体区域彼此间隔开以建立低于导通路径中的第二击穿电压的第一击穿电压。

7. 发明授权

US08344443B2 Single poly NVM devices and arrays 有权
标题翻译：单一的NV NV设备和阵列
公开(公告)号：US08344443B2
公开(公告)日：2013-01-01
申请号：US12109736
申请日：2008-04-25
申请人： Weize Chen , Richard J. De Souza , Xin Lin , Patrice M. Parris
发明人： Weize Chen , Richard J. De Souza , Xin Lin , Patrice M. Parris
IPC分类号： H01L29/788 , H01L27/115 , H01L21/8247
CPC分类号： H01L29/7881 , G11C16/10 , H01L27/11519 , H01L27/11521 , H01L29/42324
摘要： A single-poly non-volatile memory includes a PMOS select transistor (210) formed with a select gate (212), and P+ source and drain regions (211, 213) formed in a shared n-well region (240), a serially connected PMOS floating gate transistor (220) formed with part of a p-type floating gate layer (222) and P+ source and drain regions (221, 223) formed in the shared n-well region (240), and a coupling capacitor (230) formed over a p-well region (250) and connected to the PMOS floating gate transistor (220), where the coupling capacitor (230) includes a first capacitor plate formed with a second part of the p-type floating gate layer (222) and an underlying portion of the p-well region (250).
摘要翻译：单多晶非易失性存储器包括形成有选择栅极（212）的PMOS选择晶体管（210），以及形成在共享的n阱区域（240）中的P +源区和漏区（211,213）形成有形成在共用n阱区域（240）中的p型浮栅（222）和P +源区和漏区（221,223）的一部分的连接PMOS浮栅晶体管（220）和耦合电容器 230），其形成在p阱区（250）上并连接到PMOS浮栅晶体管（220），其中耦合电容器（230）包括形成有p型浮栅的第二部分的第一电容器板（ 222）和p阱区（250）的下层部分。

8. 发明授权

US09857329B2 Protected sensor field effect transistors 有权
公开(公告)号：US09857329B2
公开(公告)日：2018-01-02
申请号：US15251141
申请日：2016-08-30
申请人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
发明人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
IPC分类号： G01N27/403 , G01N27/414 , B01L3/00 , H01L21/67 , G01N27/28 , H01L31/119 , H01L29/66
CPC分类号： G01N27/4148 , B01L3/5027 , B01L3/502715 , B01L3/50273 , B01L2200/10 , B01L2200/12 , B01L2300/04 , B01L2300/041 , B01L2300/0645 , B01L2300/0887 , B01L2400/0415 , B01L2400/0418 , G01N27/28 , G01N27/414 , H01L21/67259 , H01L29/4933 , H01L29/66431 , H01L29/66462 , H01L29/7833 , H01L31/119
摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.

9. 发明授权

US09553187B2 Semiconductor device and related fabrication methods 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US09553187B2
公开(公告)日：2017-01-24
申请号：US14567357
申请日：2014-12-11
申请人： Weize Chen , Richard J. De Souza , Mazhar Ul Hoque , Patrice M. Parris
发明人： Weize Chen , Richard J. De Souza , Mazhar Ul Hoque , Patrice M. Parris
IPC分类号： H01L29/78 , H01L29/66 , H01L27/02 , H01L21/28 , H01L29/49
CPC分类号： H01L29/7835 , H01L21/28105 , H01L27/0251 , H01L29/4933 , H01L29/4983 , H01L29/66659
摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a first conductivity type, a drift region and a source region each having a second conductivity type, where a channel portion of the body well region resides laterally between the source region and a first portion of the drift region that is adjacent to the channel portion. A gate structure overlies the channel portion and the adjacent portion of the drift region. A portion of the gate structure overlying the channel portion proximate the source region has the second conductivity type. Another portion of the gate structure that overlies the adjacent portion of the drift region has a different doping, and overlaps at least a portion of the channel portion, with the threshold voltage associated with the gate structure being influenced by the amount of overlap.
摘要翻译：提供半导体器件结构和相关的制造方法。示例性的半导体器件结构包括具有第一导电类型的主体阱区域，漂移区域和各自具有第二导电类型的源极区域，其中主体阱区域的沟道部分横向位于源极区域和源极区域的第一部分之间与沟道部分相邻的漂移区域。栅极结构覆盖了沟道部分和漂移区域的相邻部分。覆盖靠近源极区的沟道部分的栅极结构的一部分具有第二导电类型。覆盖漂移区域的相邻部分的栅极结构的另一部分具有不同的掺杂，并且与沟道部分的至少一部分重叠，与栅极结构相关联的阈值电压受重叠量的影响。

10. 发明授权

US09494550B1 Protected sensor field effect transistors 有权
标题翻译：保护传感器场效应晶体管
公开(公告)号：US09494550B1
公开(公告)日：2016-11-15
申请号：US14731795
申请日：2015-06-05
申请人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
发明人： Patrice M. Parris , Weize Chen , Richard J. de Souza , Jose Fernandez Villasenor , Md M. Hoque , David E. Niewolny , Raymond M. Roop
IPC分类号： G01N27/403 , G01N27/414 , B01L3/00 , H01L21/67 , H01L31/119 , H01L29/66
CPC分类号： G01N27/4148 , B01L3/5027 , B01L3/502715 , B01L3/50273 , B01L2200/10 , B01L2200/12 , B01L2300/04 , B01L2300/041 , B01L2300/0645 , B01L2300/0887 , B01L2400/0415 , B01L2400/0418 , G01N27/28 , G01N27/414 , H01L21/67259 , H01L29/4933 , H01L29/66431 , H01L29/66462 , H01L29/7833 , H01L31/119
摘要： Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.
摘要翻译：保护传感器场效应晶体管（SFET）。 SFET包括半导体衬底，场效应晶体管和感测电极。 SFET还包括由半导体衬底支撑的分析物接收区域，与感测电极接触，并被配置为接收分析物流体。分析物接收区域至少部分封闭。在一些实施方案中，分析物接收区域可以是在分析物入口和分析物出口之间延伸的封闭分析物通道。在这些实施例中，封闭的分析物通道延伸使得分析物入口和分析物出口与感测电极间隔开。在一些实施例中，SFET包括至少部分地包围分析物接收区并由可溶于分析物流体内的覆盖材料形成的覆盖结构。这些方法包括制造SFET的方法。

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