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1. 发明申请

US20090071918A1 VERTICAL SEMICONDUCTOR WAFER CARRIER 审中-公开
标题翻译：垂直半导体波导载体
公开(公告)号：US20090071918A1
公开(公告)日：2009-03-19
申请号：US11857398
申请日：2007-09-18
申请人： Panchapakesan Ramanarayanan , Karson Knutson , Peter G. Tolchinsky , Christopher Parker
发明人： Panchapakesan Ramanarayanan , Karson Knutson , Peter G. Tolchinsky , Christopher Parker
IPC分类号： H01L21/00
CPC分类号： H01L21/67309 , H01L21/6732
摘要： A vertical semiconductor wafer carrier comprises a circular base, a first wafer support rod mounted at a first position proximate a perimeter of the circular base, a second wafer support rod mounted at a second position proximate the perimeter of the circular base, wherein an angle θ12 formed between the first position and the second position relative to a center of the circular base is around 20°, a third wafer support rod mounted at a third position proximate the perimeter of the circular base, and a fourth wafer support rod mounted at a fourth position proximate the perimeter of the circular base, wherein an angle θ34 formed between the third position and the fourth position relative to the center of the circular base is around 20°, and wherein an angle θ14 formed between the first and fourth positions relative to the center of the circular base is around 180°.
摘要翻译：垂直半导体晶片载体包括圆形基底，安装在靠近圆形基底的周边的第一位置处的第一晶片支撑杆，安装在靠近圆形基底的周边的第二位置处的第二晶片支撑杆，其中角度θ12 形成在第一位置和第二位置之间相对于圆形基座的中心约为20°，第三晶片支撑杆安装在靠近圆形基座周边的第三位置，第四晶片支撑杆安装在第四位置位于邻近圆形底座的周边的位置，其中形成在第三位置和第四位置之间的相对于圆形底座的中心的角度θ34大约为20°，并且其中形成在第一和第四位置之间的角度θ14相对于圆形基座的中心约为180°。

2. 发明申请

US20080242117A1 APPARATUS TO REDUCE WAFER EDGE TEMPERATURE AND BREAKAGE OF WAFERS 审中-公开
标题翻译：减少波浪边缘温度和破裂的设备
公开(公告)号：US20080242117A1
公开(公告)日：2008-10-02
申请号：US11694934
申请日：2007-03-30
申请人： Panchapakesan Ramanarayanan , Karson Knutson , Jack Hwang , John Leonard , Sridhar Govindaraju
发明人： Panchapakesan Ramanarayanan , Karson Knutson , Jack Hwang , John Leonard , Sridhar Govindaraju
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/67115
摘要： In some embodiments radiation incident on a wafer is provided to perform an annealing process, and the wafer is cooled at an edge portion to reduce temperature and stress on the wafer. Other embodiments are described and claimed.
摘要翻译：在一些实施例中，提供入射在晶片上的辐射以执行退火处理，并且晶片在边缘部分被冷却以降低晶片上的温度和应力。描述和要求保护其他实施例。

3. 发明申请

US20090323759A1 Temperature measurement with reduced extraneous infrared in a processing chamber 失效
标题翻译：在处理室内减少外来红外线的温度测量
公开(公告)号：US20090323759A1
公开(公告)日：2009-12-31
申请号：US12217063
申请日：2008-06-30
申请人： Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli , Jack Hwang
发明人： Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli , Jack Hwang
IPC分类号： G01J5/06 , H05B6/00
CPC分类号： H05B6/645 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0806 , G01J5/0862
摘要： Temperature measurement using a pyrometer in a processing chamber is described. The extraneous light received by the pyrometer is reduced. In one example, a photodetector is used to measure the intensity of light within the processing chamber at a defined wavelength. A temperature circuit is used to convert the measured light intensity to a temperature signal, and a doped optical window between a heat source and a workpiece inside processing chamber is used to absorb light at the defined wavelength directed at the workpiece from the heat source.
摘要翻译：描述了在处理室中使用高温计的温度测量。高温计所接收的外部光线减少。在一个示例中，光电检测器用于以规定的波长测量处理室内的光的强度。使用温度电路将测量的光强度转换为温度信号，并且在处理室内的热源和工件之间的掺杂光学窗口用于从热源吸收指向工件的限定波长的光。

4. 发明授权

US07892971B2 Sub-second annealing processes for semiconductor devices 有权
标题翻译：半导体器件的次秒退火工艺
公开(公告)号：US07892971B2
公开(公告)日：2011-02-22
申请号：US12164560
申请日：2008-06-30
申请人： Jack Hwang , Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli
发明人： Jack Hwang , Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli
IPC分类号： H01L21/44
CPC分类号： H01L21/324 , H01L21/28518 , H01L29/665
摘要： An annealing method and apparatus for semiconductor manufacturing is described. The method and apparatus allows an anneal that can span a thermal budget and be tailored to a specific process and its corresponding activation energy. In some cases, the annealing method spans a timeframe from about 1 millisecond to about 1 second. An example for this annealing method includes a sub-second anneal method where a reduction in the formation of nickel pipes is achieved during salicide processing. In some cases, the method and apparatus combine the rapid heating rate of a sub-second anneal with a thermally conductive substrate to provide quick cooling for a silicon wafer. Thus, the thermal budget of the sub-second anneal methods may span the range from conventional RTP anneals to flash annealing processes (including duration of the anneal, as well as peak temperature). Other embodiments are described.
摘要翻译：描述用于半导体制造的退火方法和装置。该方法和装置允许可以跨越热预算的退火，并且可以针对具体过程及其对应的激活能量进行定制。在一些情况下，退火方法跨越约1毫秒至约1秒的时间范围。该退火方法的一个实例包括二次退火方法，其中在自杀化处理期间实现镍管形成的减少。在一些情况下，该方法和装置将亚秒级退火的快速加热速率与导热基板相结合，为硅晶片提供快速冷却。因此，次秒退火方法的热预算可以跨越从常规RTP退火到闪光退火工艺（包括退火的持续时间，以及峰值温度）的范围。描述其他实施例。

5. 发明申请

US20060286807A1 Use of active temperature control to provide emmisivity independent wafer temperature 审中-公开
公开(公告)号：US20060286807A1
公开(公告)日：2006-12-21
申请号：US11156381
申请日：2005-06-16
申请人： Jack Hwang , Robert James , Eric Lambert , Jonathan Leonard , Richard Brindos , Karson Knutson , Mark Armstrong , Justin Sandford
发明人： Jack Hwang , Robert James , Eric Lambert , Jonathan Leonard , Richard Brindos , Karson Knutson , Mark Armstrong , Justin Sandford
IPC分类号： H01L21/306 , G01R31/00 , H01L21/461
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Embodiments relate to a substrate or wafer edge support having an emmisivity greater than that of a silicon wafer, where the edge support is for supporting a wafer during processing to form circuit devices on or in the wafer. Embodiments also include temperature sensors, heat conducting gas jets, and photonic energy can be directed to sense and control the temperature of the edge support and/or wafer edge during annealing to reduce temperature roll-off or roll-up at the edge as compared to the center of the wafer. Specifically, use of an edge support having an emmisivity greater than or equal to that of the wafer during processing allows helium gas jets directed at the edge support and/or wafer edge to reduce temperature roll-up at the edge during annealing. Because wafers from different processes and anneal locations may all have different emmisivities, use of the feedback loop will enable one edge ring to support the uniform anneal of wafers with a range of different emmisivities.

6. 发明申请

US20050211697A1 Multi-zone reflecting device for use in flash lamp processes 失效
标题翻译：用于闪光灯工艺的多区域反射装置
公开(公告)号：US20050211697A1
公开(公告)日：2005-09-29
申请号：US10815068
申请日：2004-03-26
申请人： Karson Knutson , Jack Hwang
发明人： Karson Knutson , Jack Hwang
IPC分类号： F27B5/14 , F27B17/00 , F27D11/00 , H01L21/00
CPC分类号： H01L21/67115 , F27B17/0025
摘要： A method, apparatus, and system including a reflecting device having a plurality of reflecting zones with associated reflectivities for reflecting light from a flash lamp, are described herein.
摘要翻译：本文描述了一种包括具有多个反射区域的反射装置的方法，装置和系统，其具有用于反射来自闪光灯的光的相关联的反射率。

7. 发明授权

US07767509B2 Methods of forming a multilayer capping film to minimize differential heating in anneal processes 有权
标题翻译：形成多层封盖膜以最小化退火工艺中的差分加热的方法
公开(公告)号：US07767509B2
公开(公告)日：2010-08-03
申请号：US11692366
申请日：2007-03-28
申请人： Mark Liu , Rob James , Jake Jensen , Karson Knutson
发明人： Mark Liu , Rob James , Jake Jensen , Karson Knutson
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L21/26513 , H01L29/66575
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括注入源极/漏极区域，在源极/漏极区域上形成多层帽，退火源极/漏极区域以及去除多层帽盖。

8. 发明授权

US07758238B2 Temperature measurement with reduced extraneous infrared in a processing chamber 失效
标题翻译：在处理室内减少外来红外线的温度测量
公开(公告)号：US07758238B2
公开(公告)日：2010-07-20
申请号：US12217063
申请日：2008-06-30
申请人： Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli , Jack Hwang
发明人： Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli , Jack Hwang
IPC分类号： G01K5/00 , G01K13/00 , G01J5/00
CPC分类号： H05B6/645 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0806 , G01J5/0862
摘要： Temperature measurement using a pyrometer in a processing chamber is described. The extraneous light received by the pyrometer is reduced. In one example, a photodetector is used to measure the intensity of light within the processing chamber at a defined wavelength. A temperature circuit is used to convert the measured light intensity to a temperature signal, and a doped optical window between a heat source and a workpiece inside processing chamber is used to absorb light at the defined wavelength directed at the workpiece from the heat source.
摘要翻译：描述了在处理室中使用高温计的温度测量。高温计所接收的外部光线减少。在一个示例中，光电检测器用于以规定的波长测量处理室内的光的强度。使用温度电路将测量的光强度转换为温度信号，并且在处理室内的热源和工件之间的掺杂光学窗口用于从热源吸收指向工件的限定波长的光。

9. 发明申请

US20090325392A1 SUB-SECOND ANNEALING PROCESSES FOR SEMICONDUCTOR DEVICES 有权
标题翻译：用于半导体器件的次二次退火工艺
公开(公告)号：US20090325392A1
公开(公告)日：2009-12-31
申请号：US12164560
申请日：2008-06-30
申请人： Jack Hwang , Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli
发明人： Jack Hwang , Sridhar Govindaraju , Karson Knutson , Harold Kennel , Aravind Killampalli
IPC分类号： H01L21/26
CPC分类号： H01L21/324 , H01L21/28518 , H01L29/665
摘要： An annealing method and apparatus for semiconductor manufacturing is described. The method and apparatus allows an anneal that can span a thermal budget and be tailored to a specific process and its corresponding activation energy. In some cases, the annealing method spans a timeframe from about 1 millisecond to about 1 second. An example for this annealing method includes a sub-second anneal method where a reduction in the formation of nickel pipes is achieved during salicide processing. In some cases, the method and apparatus combine the rapid heating rate of a sub-second anneal with a thermally conductive substrate to provide quick cooling for a silicon wafer. Thus, the thermal budget of the sub-second anneal methods may span the range from conventional RTP anneals to flash annealing processes (including duration of the anneal, as well as peak temperature). Other embodiments are described.
摘要翻译：描述用于半导体制造的退火方法和装置。该方法和装置允许可以跨越热预算的退火，并且可以针对具体过程及其对应的激活能量进行定制。在一些情况下，退火方法跨越约1毫秒至约1秒的时间范围。该退火方法的一个实例包括二次退火方法，其中在自杀化处理期间实现镍管形成的减少。在一些情况下，该方法和装置将亚秒级退火的快速加热速率与导热基板相结合，为硅晶片提供快速冷却。因此，次秒退火方法的热预算可以跨越从常规RTP退火到闪光退火工艺（包括退火的持续时间，以及峰值温度）的范围。描述其他实施例。

10. 发明申请

US20080242038A1 METHODS OF FORMING A MULTILAYER CAPPING FILM TO MINIMIZE DIFFERENTIAL HEATING IN ANNEAL PROCESSES 有权
标题翻译：形成多层覆膜的方法，以最小化临床过程中的差异性加热
公开(公告)号：US20080242038A1
公开(公告)日：2008-10-02
申请号：US11692366
申请日：2007-03-28
申请人： Mark Liu , Rob James , Jake Jensen , Karson Knutson
发明人： Mark Liu , Rob James , Jake Jensen , Karson Knutson
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L21/26513 , H01L29/66575
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括注入源极/漏极区域，在源极/漏极区域上形成多层帽，退火源极/漏极区域以及去除多层帽盖。

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