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1. 发明授权

US10807865B2 Semiconductor nanocrystals 有权
公开(公告)号：US10807865B2
公开(公告)日：2020-10-20
申请号：US13421527
申请日：2012-03-15
申请人： Ou Chen , Moungi G. Bawendi
发明人： Ou Chen , Moungi G. Bawendi
IPC分类号： C09K11/56 , B82Y30/00 , B82Y20/00 , C09K11/02 , C09K11/88
摘要： A method of making a nanocrystal includes slowly infusing a M-containing compound and a X donor into a mixture including a nanocrystal core, thereby forming an overcoating including M and X on the core.

2. 发明申请

US20130240787A1 SEMICONDUCTOR NANOCRYSTALS 审中-公开
公开(公告)号：US20130240787A1
公开(公告)日：2013-09-19
申请号：US13421527
申请日：2012-03-15
申请人： Ou Chen , Moungi G. Bawendi
发明人： Ou Chen , Moungi G. Bawendi
IPC分类号： C09K11/88 , B82Y20/00
CPC分类号： B82Y30/00 , B82Y20/00 , C09K11/02 , C09K11/565 , C09K11/881
摘要： A method of making a nanocrystal includes slowly infusing a M-containing compound and a X donor into a mixture including a nanocrystal core, thereby forming an overcoating including M and X on the core.
摘要翻译：制造纳米晶体的方法包括将含M化合物和X供体缓慢地注入包含纳米晶核的混合物中，从而在芯上形成包括M和X的外涂层。

3. 发明申请

US20140070258A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20140070258A1
公开(公告)日：2014-03-13
申请号：US13614405
申请日：2012-09-13
申请人： Ou Chen , Chi Liang Sheng , Chang Chun Wei , Wu Chih-Wei
发明人： Ou Chen , Chi Liang Sheng , Chang Chun Wei , Wu Chih-Wei
IPC分类号： H01L33/42
CPC分类号： H01L33/42 , H01L33/08 , H01L33/14 , H01L33/38
摘要： A light-emitting device is disclosed and comprises: a substrate; a light-emitting stack comprising a first conductivity type semiconductor layer, an active layer over the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer over the active layer; a transparent conductive layer over the a light-emitting stack; a first trench dividing the transparent conductive layer into a first block and a second block; a connecting layer electrically connecting the two blocks of the transparent conductive layer; a first conductivity type contact layer between the substrate and the first conductivity type semiconductor layer, wherein the conductivity of the first conductivity type contact layer is greater than the conductivity of the first conductivity type semiconductor layer.
摘要翻译：公开了一种发光器件，包括：衬底; 包括第一导电类型半导体层，在第一导电类型半导体层上方的有源层和在有源层上的第二导电类型半导体层的发光堆叠; 在发光叠层上的透明导电层; 将所述透明导电层分割为第一块和第二块的第一沟槽; 电连接所述透明导电层的两个块的连接层; 在所述基板和所述第一导电型半导体层之间的第一导电型接触层，其中所述第一导电型接触层的导电性大于所述第一导电类型半导体层的导电性。

4. 发明授权

US08137457B2 One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection 有权
标题翻译：高效优质金属硫族化物纳米晶体的一锅合成无前体注射
公开(公告)号：US08137457B2
公开(公告)日：2012-03-20
申请号：US12249586
申请日：2008-10-10
申请人： Yunwei Charles Cao , Ou Chen
发明人： Yunwei Charles Cao , Ou Chen
IPC分类号： C30B11/00 , C30B7/00 , C30B21/02 , C30B28/06
CPC分类号： C01B19/007 , B82Y30/00 , C01G1/00 , C01G9/08 , C01G11/02 , C01G13/00 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2002/86 , C01P2002/88 , C01P2004/04 , C01P2004/64 , C30B7/00 , C30B29/605 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , Y10S117/906 , Y10S117/912
摘要： A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.
摘要翻译：在没有前体注入的情况下形成单分散金属硫族化物纳米晶体的方法，包括以下步骤：在第一温度下将金属源，硫属元素氧化物或硫属化合物当量和包含还原剂的流体在反应罐中组合以形成液体包括组件; 将组件的温度提高到足够的温度以引发成核以形成多个金属硫族化物纳米晶体; 并且在等于或大于足够温度的温度下，不注入金属源或硫属元素氧化物，生长多个金属硫属元素化物纳米晶体，其中晶体生长基本上没有成核进行形成多个单分散金属硫族化物纳米晶体。可以通过选择金属源和溶剂系统来制备各种尺寸的良好控制的单分散CdSe纳米晶体。

5. 发明申请

US20110031430A1 SYNTHESIS OF WATER-SOLUBLE ORGANIC NANOPARTICLES AS EPR STANDARD 审中-公开
标题翻译：作为EPR标准的水溶性有机纳米颗粒的合成
公开(公告)号：US20110031430A1
公开(公告)日：2011-02-10
申请号：US12850088
申请日：2010-08-04
申请人： Y. CHARLES CAO , Ou Chen , Alexander Angerhofer
发明人： Y. CHARLES CAO , Ou Chen , Alexander Angerhofer
IPC分类号： H01F1/00 , C07C241/02 , B32B5/16
CPC分类号： C07C243/22 , B82Y25/00 , G01F1/716 , H01F1/0054 , Y10T428/2982 , Y10T428/2989
摘要： Novel water soluble paramagnetic organic nanoparticles are formed by a novel method where an organic solution of an organic compound is injected into water under agitation that is maintained for a desired period of time for nanoparticle growth followed by termination of the growth by the addition of an aqueous surfactant solution. The size of the nanoparticles depends on the time between injection and addition of the surfactant solution. In embodiments of the invention, the water soluble paramagnetic organic nanoparticles can be DPPH nanoparticles, DPPH nanoparticles doped with DPPH-H, or core/shell nanoparticles where a DPPH core is covered by a DPPH-H shell.
摘要翻译：通过一种新的方法形成新的水溶性顺磁性有机纳米颗粒，其中将有机化合物的有机溶液在搅拌下注入水中，将其维持在纳米颗粒生长所需的时间段，然后通过加入水溶液终止生长表面活性剂溶液。纳米颗粒的尺寸取决于注射和添加表面活性剂溶液之间的时间。在本发明的实施方案中，水溶性顺磁性有机纳米颗粒可以是DPPH纳米颗粒，掺有DPPH-H的DPPH纳米颗粒或其中DPPH核被DPPH-H壳覆盖的核/壳纳米颗粒。

6. 发明申请

US20100264334A1 EXCITATION-INTENSITY-DEPENDENT, COLOR-TUNABLE, DUAL EMITTING NANOCRYSTALS 有权
标题翻译：激发依赖性，颜色可调，双重发光纳米晶体
公开(公告)号：US20100264334A1
公开(公告)日：2010-10-21
申请号：US12755820
申请日：2010-04-07
申请人： Y. CHARLES CAO , Ou Chen , Daniel Edward Shelby , Yongan Yang , Jiaqi Zhuang , Nicolo Omenetto
发明人： Y. CHARLES CAO , Ou Chen , Daniel Edward Shelby , Yongan Yang , Jiaqi Zhuang , Nicolo Omenetto
IPC分类号： F21V9/16 , H01L33/06
CPC分类号： C09K11/025 , C09K11/565
摘要： An embodiment of the invention is a device for photo-stimulated color emission having at least one plurally doped semiconducting nanoparticle comprising at least one semiconducting material and a plurality of at least one dopant coupled with an irradiation source such that the plurally doped semiconducting nanoparticle emit electromagnetic radiation at two or more wavelengths where the intensities of the emissions depend on the intensity of the irradiation. In an embodiment of the invention, the plurally doped semiconducting nanoparticle can be a doped core/shell nanoparticle where the plurality of dopants can reside in exclusively the core, exclusively the shell, or in both the core and shell.
摘要翻译：本发明的一个实施例是一种用于光刺激颜色发射的装置，其具有至少一个多掺杂的半导体纳米颗粒，其包含至少一种半导体材料和多个与辐射源耦合的至少一种掺杂剂，使得多个掺杂的半导体纳米颗粒发射电磁在两个或更多个波长处的辐射，其中发射强度取决于照射的强度。在本发明的一个实施方案中，多掺杂的半导体纳米颗粒可以是掺杂的核/壳纳米颗粒，其中多个掺杂剂可以仅存在于核心中，仅存在于壳中，或者位于核和壳两者中。

7. 发明授权

US08410455B2 Excitation-intensity-dependent, color-tunable, dual emitting nanocrystals 有权
标题翻译：激发强度相关，颜色可调，双发射纳米晶体
公开(公告)号：US08410455B2
公开(公告)日：2013-04-02
申请号：US12755820
申请日：2010-04-07
申请人： Y. Charles Cao , Ou Chen , Daniel Edward Shelby , Yongan Yang , Jiaqi Zhuang , Nicolo Omenetto
发明人： Y. Charles Cao , Ou Chen , Daniel Edward Shelby , Yongan Yang , Jiaqi Zhuang , Nicolo Omenetto
IPC分类号： G01N21/64
CPC分类号： C09K11/025 , C09K11/565
摘要： An embodiment of the invention is a device for photo-stimulated color emission having at least one plurally doped semiconducting nanoparticle comprising at least one semiconducting material and a plurality of at least one dopant coupled with an irradiation source such that the plurally doped semiconducting nanoparticle emit electromagnetic radiation at two or more wavelengths where the intensities of the emissions depend on the intensity of the irradiation. In an embodiment of the invention, the plurally doped semiconducting nanoparticle can be a doped core/shell nanoparticle where the plurality of dopants can reside in exclusively the core, exclusively the shell, or in both the core and shell.
摘要翻译：本发明的一个实施例是一种用于光刺激颜色发射的装置，其具有至少一个多掺杂的半导体纳米颗粒，其包含至少一种半导体材料和多个与辐射源耦合的至少一种掺杂剂，使得多个掺杂的半导体纳米颗粒发射电磁在两个或更多个波长处的辐射，其中发射强度取决于照射的强度。在本发明的一个实施方案中，多掺杂的半导体纳米颗粒可以是掺杂的核/壳纳米颗粒，其中多个掺杂剂可以仅存在于核心中，仅存在于壳中，或者位于核和壳两者中。

8. 发明申请

US20090084307A1 One-Pot Synthesis of High-Quality Metal Chalcogenide Nanocrystals Without Precursor Injection 有权
标题翻译：不含前体注射剂的高品质金属硫属元素纳米晶体的一锅合成
公开(公告)号：US20090084307A1
公开(公告)日：2009-04-02
申请号：US12249586
申请日：2008-10-10
申请人： Yunwei Charles Cao , Ou Chen
发明人： Yunwei Charles Cao , Ou Chen
IPC分类号： B01J19/00
CPC分类号： C01B19/007 , B82Y30/00 , C01G1/00 , C01G9/08 , C01G11/02 , C01G13/00 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2002/86 , C01P2002/88 , C01P2004/04 , C01P2004/64 , C30B7/00 , C30B29/605 , H01L21/02551 , H01L21/02568 , H01L21/02601 , H01L21/02628 , Y10S117/906 , Y10S117/912
摘要： A method of forming monodisperse metal chalcogenide nanocrystals without precursor injection, comprising the steps of: combining a metal source, a chalcogen oxide or a chalcogen oxide equivalent, and a fluid comprising a reducing agent in a reaction pot at a first temperature to form a liquid comprising assembly; increasing the temperature of the assembly to a sufficient-temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals; and growing the plurality of metal chalcogenide nanocrystals without injection of either the metal source or the chalcogen oxide at a temperature equal to or greater than the sufficient-temperature, wherein crystal growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. Well controlled monodispersed CdSe nanocrystals of various sizes can be prepared by choice of the metal source and solvent system.
摘要翻译：在没有前体注入的情况下形成单分散金属硫族化物纳米晶体的方法，包括以下步骤：在第一温度下将金属源，硫属元素氧化物或硫属化合物当量和包含还原剂的流体在反应罐中组合以形成液体包括组件; 将组件的温度提高到足够的温度以引发成核以形成多个金属硫族化物纳米晶体; 并且在等于或大于足够温度的温度下，不注入金属源或硫属元素氧化物，生长多个金属硫属元素化物纳米晶体，其中晶体生长基本上没有成核进行形成多个单分散金属硫族化物纳米晶体。可以通过选择金属源和溶剂系统来制备各种尺寸的良好控制的单分散CdSe纳米晶体。

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