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1. 发明授权

US6066762A Process for the production of carbonyl compound 失效
标题翻译：生产羰基化合物的方法
公开(公告)号：US6066762A
公开(公告)日：2000-05-23
申请号：US997552
申请日：1997-12-23
申请人： Noriyuki Yoneda , Takeshi Minami , Yoshihiro Nakagawa , Ikuo Ohta , Akihisa Yamaguchi , Hideki Sugiyama , Fumihiko Uemura
发明人： Noriyuki Yoneda , Takeshi Minami , Yoshihiro Nakagawa , Ikuo Ohta , Akihisa Yamaguchi , Hideki Sugiyama , Fumihiko Uemura
IPC分类号： C07C51/12
CPC分类号： C07C51/12
摘要： A process for the production of a carbonyl compound such as acetic acid by reacting a carbonylatable compound such as methanol with a carbon monoxide in the presence of a carbonylation catalyst containing a noble metal complex supported on a porous, cross-linked vinylpyridine resin at a temperature of 140-250.degree. C., a carbon monoxide partial pressure of 7-30 kg/cm.sup.2 and a hydrogen partial pressure of 0.1-5 kg/cm.sup.2 to obtain a liquid product containing the carbonyl compound and an unreacted CO-containing gas product. The water content and the carbonylation degree of the liquid product within the reactor are maintained at 0.5-10% by weight and 0.5-0.9, respectively, The carbonyl compound is separated from the liquid product in a flasher and/or a distillation tower formed of titanium or a titanium-palladium alloy. The liquid product is introduced into a pressure reducing valve and then mixed with the CO-containing gas product before being fed to the flasher and/or distillation tower.
摘要翻译：一种通过使羰基化合物如甲醇与一氧化碳在羰基化催化剂存在下反应生产羰基化合物的方法，所述羰基化催化剂含有负载在多孔交联的乙烯基吡啶树脂上的贵金属配合物， 140-250℃，一氧化碳分压为7-30kg / cm2，氢分压为0.1-5kg / cm2，得到含有羰基化合物和未反应的含CO气体产物的液体产物。反应器内的液体产物的水含量和羰基化度分别保持在0.5-10重量％和0.5-0.9。羰基化合物与闪蒸器和/或蒸馏塔中的液体产物分离，由钛或钛 - 钯合金。将液体产物引入减压阀中，然后在加入闪蒸器和/或蒸馏塔之前与含CO气体产物混合。

2. 发明授权

US5880311A Method of contacting catalyst particles with gas and liquid 失效
公开(公告)号：US5880311A
公开(公告)日：1999-03-09
申请号：US413626
申请日：1995-03-30
申请人： Fumihiko Uemura , Hideki Sugiyama , Chieko Nagasawa , Takeshi Minami , Kazuhiko Hamato , Noriyuki Yoneda , Akihisa Yamaguchi
发明人： Fumihiko Uemura , Hideki Sugiyama , Chieko Nagasawa , Takeshi Minami , Kazuhiko Hamato , Noriyuki Yoneda , Akihisa Yamaguchi
IPC分类号： B01J8/00 , B01J8/18 , B01J8/22 , C07C45/50 , C07C51/12 , C07C67/36 , C07C69/02
CPC分类号： C07C51/12 , B01J8/007 , B01J8/1854 , B01J8/1863 , B01J8/222 , B01J8/226 , B01J8/228 , C07C45/50 , C07C67/36 , B01J2208/00176 , B01J2208/00203 , B01J2208/00212 , B01J2208/003
摘要： Catalyst particles are contacted with a liquid and a gas in a vertically extending cylindrical vessel. The particles and liquid are placed in the vessel into which the gas and liquid are continuously fed from the bottom thereof so that an upwardly flowing mixture comprising the particles, liquid and gas is formed. The mixture is introduced into a gas separating zone disposed adjacent to an upper portion of the vessel to separate the mixture by gravity into a gas phase, a supernatant liquid phase and a phase rich in the catalyst particles. The gas and supernatant phases are continuously withdrawn from the separating zone while the catalyst particles-rich phase is continuously recycled to the bottom of the vessel by gravity.

3. 发明授权

US6080373A Method of contacting catalyst particles with gas and liquid 失效
标题翻译：催化剂颗粒与气体和液体接触的方法
公开(公告)号：US6080373A
公开(公告)日：2000-06-27
申请号：US939622
申请日：1997-09-29
申请人： Fumihiko Uemura , Hideki Sugiyama , Chieko Nagasawa , Takeshi Minami , Kazuhiko Hamato , Noriyuki Yoneda , Akihisa Yamaguchi
发明人： Fumihiko Uemura , Hideki Sugiyama , Chieko Nagasawa , Takeshi Minami , Kazuhiko Hamato , Noriyuki Yoneda , Akihisa Yamaguchi
IPC分类号： B01J8/00 , B01J8/18 , B01J8/22 , C07C45/50 , C07C51/12 , C07C67/36
CPC分类号： C07C51/12 , B01J8/007 , B01J8/1854 , B01J8/1863 , B01J8/222 , B01J8/226 , B01J8/228 , C07C45/50 , C07C67/36 , B01J2208/00176 , B01J2208/00203 , B01J2208/00212 , B01J2208/003
摘要： Catalyst particles are contacted with a liquid and a gas in a vertically extending cylindrical vessel. The particles and liquid are placed in the vessel into which the gas and liquid are continuously fed from the bottom thereof so that an upwardly flowing mixture comprising the particles, liquid and gas is formed. The mixture is introduced into a gas separating zone disposed adjacent to an upper portion of the vessel to separate the mixture by gravity into a gas phase, a supernatant liquid phase and a phase rich in the catalyst particles. The gas and supernatant phases are continuously withdrawn from the separating zone while the catalyst particles-rich phase is continuously recycled to the bottom of the vessel by gravity.
摘要翻译：催化剂颗粒与垂直延伸的圆柱形容器中的液体和气体接触。将颗粒和液体放置在容器中，气体和液体从其底部连续进料，从而形成包含颗粒，液体和气体的向上流动的混合物。将混合物引入到与容器的上部相邻设置的气体分离区中，以通过重力将混合物分离成气相，上清液相和富含催化剂颗粒的相。气体和上清液相从分离区连续取出，而富含催化剂颗粒的相通过重力连续循环到容器的底部。

4. 发明授权

US08399932B2 Semiconductor device, semiconductor integrated circuit, SRAM, and method for producing Dt-MOS transistor 有权
标题翻译：半导体器件，半导体集成电路，SRAM以及用于制造Dt-MOS晶体管的方法
公开(公告)号：US08399932B2
公开(公告)日：2013-03-19
申请号：US13118918
申请日：2011-05-31
申请人： Eiji Yoshida , Akihisa Yamaguchi
发明人： Eiji Yoshida , Akihisa Yamaguchi
IPC分类号： H01L21/70
CPC分类号： H01L27/092 , H01L21/823475 , H01L21/823493 , H01L21/823871 , H01L21/823892 , H01L27/0207 , H01L27/11 , H01L27/1104 , H01L29/1083 , H01L29/7833
摘要： A semiconductor device includes a silicon substrate; an element isolation region; an element region including a first well; a contact region; a gate electrode extending from the element region to a sub-region of the element isolation region between the element region and the contact region; a source diffusion region; a drain diffusion region; a first insulating region contacting a lower end of the source diffusion region; a second insulating region contacting a lower end of the drain diffusion region; and a via plug configured to electrically connect the gate electrode with the contact region. The first well is disposed below the gate electrode and is electrically connected with the contact region via the silicon substrate under the sub-region. The lower end of the element isolation region except the sub-region is located lower than the lower end of the first well.
摘要翻译：半导体器件包括硅衬底; 元件隔离区; 包括第一井的元件区域; 接触区域从元件区域延伸到元件区域和接触区域之间的元件隔离区域的子区域的栅电极; 源扩散区; 漏极扩散区域; 与源极扩散区域的下端接触的第一绝缘区域; 接触所述漏极扩散区域的下端的第二绝缘区域; 以及通孔，被配置为将所述栅极电极与所述接触区域电连接。第一阱设置在栅电极下方，并且在子区域下经由硅衬底与接触区域电连接。除了子区域之外的元件隔离区域的下端位于比第一阱的下端低的位置。

5. 发明申请

US20120032272A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, SRAM, AND METHOD FOR PRODUCING Dt-MOS TRANSISTOR 有权
标题翻译：半导体器件，半导体集成电路，SRAM和用于生产D-MOS晶体管的方法
公开(公告)号：US20120032272A1
公开(公告)日：2012-02-09
申请号：US13118918
申请日：2011-05-31
申请人： Eiji Yoshida , Akihisa Yamaguchi
发明人： Eiji Yoshida , Akihisa Yamaguchi
IPC分类号： H01L27/092 , H01L29/772
CPC分类号： H01L27/092 , H01L21/823475 , H01L21/823493 , H01L21/823871 , H01L21/823892 , H01L27/0207 , H01L27/11 , H01L27/1104 , H01L29/1083 , H01L29/7833
摘要： A semiconductor device includes a silicon substrate; an element isolation region; an element region including a first well; a contact region; a gate electrode extending from the element region to a sub-region of the element isolation region between the element region and the contact region; a source diffusion region; a drain diffusion region; a first insulating region contacting a lower end of the source diffusion region; a second insulating region contacting a lower end of the drain diffusion region; and a via plug configured to electrically connect the gate electrode with the contact region. The first well is disposed below the gate electrode and is electrically connected with the contact region via the silicon substrate under the sub-region. The lower end of the element isolation region except the sub-region is located lower than the lower end of the first well.
摘要翻译：半导体器件包括硅衬底; 元件隔离区; 包括第一井的元件区域; 接触区域从元件区域延伸到元件区域和接触区域之间的元件隔离区域的子区域的栅电极; 源扩散区; 漏极扩散区域; 与源极扩散区域的下端接触的第一绝缘区域; 接触所述漏极扩散区域的下端的第二绝缘区域; 以及通孔，被配置为将所述栅极电极与所述接触区域电连接。第一阱设置在栅电极下方，并且在子区域下经由硅衬底与接触区域电连接。除了子区域之外的元件隔离区域的下端位于比第一阱的下端低的位置。

6. 发明授权

US06510113B1 Recording apparatus, recording method, and recording medium carrying computer program for recording a signal 失效
标题翻译：记录装置，记录方法和携带用于记录信号的计算机程序的记录介质
公开(公告)号：US06510113B1
公开(公告)日：2003-01-21
申请号：US09689776
申请日：2000-10-18
申请人： Akihisa Yamaguchi , Masaaki Matsumoto
发明人： Akihisa Yamaguchi , Masaaki Matsumoto
IPC分类号： G11B509
CPC分类号： G11B27/3063 , G11B27/034 , G11B2220/216 , G11B2220/218 , G11B2220/2545
摘要： A recording apparatus, a recording method, and a recording medium, which allows a search operation based on a second segment information signal representing finely divided segments of a recording signal even in a player which can perform only a searching operation of a first segment information signal representing large segments of the recording signal. When a change of the second segment information signal of a signal to be recorded is detected, the first segment information signal being formed is updated and the first segment information signal is recorded together with an audio signal. That is, the second segment information signal of the signal to be recorded is converted into the first segment information signal and recorded together with the audio signal.
摘要翻译：一种记录装置，记录方法和记录介质，即使在仅能够执行第一段信息信号的搜索操作的播放器中，也允许基于代表记录信号的细分段的第二段信息信号的搜索操作代表记录信号的大段。当检测要记录的信号的第二段信息信号的改变时，形成的第一段信息信号被更新，并且第一段信息信号与音频信号一起被记录。也就是说，要记录的信号的第二段信息信号被转换成第一段信息信号并与音频信号一起记录。

7. 发明授权

US06960502B2 Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US06960502B2
公开(公告)日：2005-11-01
申请号：US10351433
申请日：2003-01-27
申请人： Akihisa Yamaguchi
发明人： Akihisa Yamaguchi
IPC分类号： H01L27/092 , H01L21/265 , H01L21/28 , H01L21/314 , H01L21/318 , H01L21/8238 , H01L29/51 , H01L29/78 , H01L21/3105
CPC分类号： H01L21/02329 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02337 , H01L21/0234 , H01L21/265 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L21/823857 , H01L29/513 , H01L29/518
摘要： A reduction of a leakage current as well as a decrease in the thickness of an insulating film is realized in a semiconductor device. To this end, a silicon oxide film and a silicon nitride film are formed on a substrate, which is then heated to a temperature within a range of 20° C.–600° C. so that a plasma nitridation process can be performed on the silicon nitride film. Further, a thermal process is performed in a non-oxide gas atmosphere. By performing these processes, the gate leakage current can be significantly reduced in the formed gate insulator, and the silicon oxide-equivalent thickness of the insulating film can be significantly decreased as well.
摘要翻译：在半导体器件中实现漏电流的减小以及绝缘膜的厚度的减小。为此，在基板上形成氧化硅膜和氮化硅膜，然后将其加热至20℃〜600℃的范围内的温度，从而能够对其进行等离子体氮化处理氮化硅膜。此外，在非氧化物气体气氛中进行热处理。通过进行这些处理，可以在形成的栅极绝缘体中显着降低栅极漏电流，并且绝缘膜的氧化硅当量厚度也可以显着降低。

8. 发明申请

US20050220309A1 Sound reproduction apparatus, sound reproduction system, sound reproduction method and control program, and information recording medium for recording the program 审中-公开
标题翻译：声音再现装置，声音再现系统，声音再现方法和控制程序以及用于记录程序的信息记录介质
公开(公告)号：US20050220309A1
公开(公告)日：2005-10-06
申请号：US11090912
申请日：2005-03-24
申请人： Mikiko Hirata , Akihisa Yamaguchi , Junichi Imamura , Jun Peng , Susumu Yamamoto
发明人： Mikiko Hirata , Akihisa Yamaguchi , Junichi Imamura , Jun Peng , Susumu Yamamoto
IPC分类号： H04S7/00 , G10K15/00 , H04R5/00 , H04R5/02 , H04S5/02
CPC分类号： H04S7/302 , H04S7/301
摘要： In a recording unit, a set state table in which various parameters which are required are stored when a sound processing unit performs signal processing for audio data that corresponds to each channel, and a setting screen data are recorded. This setting screen data is linked to the set state table, so that the set state table is altered in accordance with alteration performed on this setting screen. As a result, the parameters that are used when the sound processing unit performs signal processing for audio data are altered.
摘要翻译：在记录单元中，当声音处理单元对与每个频道对应的音频数据进行信号处理时，存储所需的各种参数的设置状态表和设置屏幕数据。该设定画面数据被链接到设定状态表，使得根据在该设定画面上进行的变更来改变设定状态表。结果，当声音处理单元对音频数据执行信号处理时所使用的参数被改变。

9. 发明授权

US08379428B2 Semiconductor storage device and method of manufacturing the same 有权
公开(公告)号：US08379428B2
公开(公告)日：2013-02-19
申请号：US12914086
申请日：2010-10-28
申请人： Hiroyuki Ogawa , Akihisa Yamaguchi
发明人： Hiroyuki Ogawa , Akihisa Yamaguchi
IPC分类号： G11C5/06 , G11C8/02 , H01L27/108
CPC分类号： H01L21/28 , H01L27/0207 , H01L27/10832 , H01L27/10882 , H01L27/10891 , H01L27/10894
摘要： A semiconductor storage device includes: memory cells including a transistor and a capacitor; bit lines; word lines; and sense amplifiers including first and second sense amplifiers, wherein the memory cells includes: a first memory cell group sharing a first auxiliary word line; and a second memory cell group sharing a second auxiliary word line, wherein the word lines includes a first word line coupled to the first auxiliary word line and a second word line coupled to the second auxiliary word line, the first word line is coupled to the first auxiliary word line in a first word line contact region, the second word line is coupled to the second auxiliary word line in a second word line contact region, the bit lines includes first and second bit lines coupled to the first sense amplifier on both sides of the first word line contact region.

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