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1. 发明申请

US20070291273A1 Laser gyro and electronic device using the same 有权
标题翻译：激光陀螺仪和电子设备使用相同
公开(公告)号：US20070291273A1
公开(公告)日：2007-12-20
申请号：US11806486
申请日：2007-05-31
申请人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
发明人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
IPC分类号： G01C19/66
CPC分类号： G01C19/66
摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
摘要翻译：本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置（光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

2. 发明授权

US07564563B2 Laser gyro and electronic device using the same 有权
标题翻译：激光陀螺仪和电子设备使用相同
公开(公告)号：US07564563B2
公开(公告)日：2009-07-21
申请号：US11806486
申请日：2007-05-31
申请人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
发明人： Noriyuki Yokouchi , Junji Yoshida , Takahisa Harayama , Takehiro Fukushima , Akihiko Kasukawa , Shuichi Tamura , Keizou Inagaki , Morito Matsuoka
IPC分类号： G01C19/72
CPC分类号： G01C19/66
摘要： A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
摘要翻译：本发明的激光陀螺仪包括：激光激发装置（半导体激光装置100），其激励在圆形环状路径（光路40）中以相反的方向传播的第一和第二激光，耦合装置（光波导41和42），用于重叠第一和第二激光;以及光电检测器，用于观察由叠加的第一和第二激光产生的干涉信号。

3. 发明授权

US06737290B2 Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device 失效
标题翻译：表面发射半导体激光器件及其制造方法以及采用该激光器件的表面发射半导体激光器阵列
公开(公告)号：US06737290B2
公开(公告)日：2004-05-18
申请号：US10223190
申请日：2002-08-16
申请人： Toshikazu Mukaihara , Noriyuki Yokouchi , Akihiko Kasukawa
发明人： Toshikazu Mukaihara , Noriyuki Yokouchi , Akihiko Kasukawa
IPC分类号： H01L2100
CPC分类号： H01S5/18311 , H01S5/209
摘要： A surface-emitting semiconductor laser device having reduced device resistance, a method for fabricating the device and a surface-emitting semiconductor laser array employing the device are provided. The laser device comprises a lower reflector layer structure and an upper reflector layer structure, formed on a p-type semiconductor substrate. An etching blocking layer, a current confinement layer, and an active layer are formed in that order from below between the lower and upper reflector layer structures. The portion over the etching blocking layer is formed into a mesa shape.
摘要翻译：提供具有降低的器件电阻的表面发射半导体激光器器件，制造器件的方法和采用该器件的表面发射半导体激光器阵列。激光装置包括形成在p型半导体衬底上的下反射器层结构和上反射器层结构。在下反射器层结构和上反射器层结构之间从下方依次形成蚀刻阻挡层，电流限制层和有源层。蚀刻阻挡层上的部分形成台面形状。

4. 发明授权

US5666375A Semiconductor quantum well laser having a low threshold current density 失效
标题翻译：具有低阈值电流密度的半导体量子阱激光器
公开(公告)号：US5666375A
公开(公告)日：1997-09-09
申请号：US555472
申请日：1995-11-08
申请人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Noriyuki Yokouchi , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01C3/18 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3434 , H01S5/3409 , H01S5/34306
摘要： The present invention gives rise to a 1.3 .mu.m tensile-strained quantum well laser having a quantum well active layer which can be structurally specified as In.sub.1-x Ga.sub.x As.sub.y P.sub.1-y with X between 0.42 and 0.55 and Y between 0.8 and 0.75. The InGaAsP active layer needs to have a tensile stress between 1.0 and 1.5% and can be fabricated without any substantial phase-separation between InP and GaAs. The 1.3 .mu.m tensile-strained quantum well laser is equipped with a remarkably meager threshold current density of less than 0.2 kA/cm.sup.2. The preferable tensile strain ranges between from 1.2 to 1.4% or thereabout.
摘要翻译：本发明产生了具有量子阱活性层的1.3μm拉伸应变量子阱激光器，该量子阱活性层可以在结构上被定义为In1-xGaxAsyP1-y，X在0.42和0.55之间，Y在0.8和0.75之间。 InGaAsP有源层需要具有1.0至1.5％的拉伸应力，并且可以在InP和GaAs之间没有任何实质相分离的情况下制造。 1.3μm拉伸应变量子阱激光器的阈值电流密度极小，小于0.2kA / cm2。优选的拉伸应变范围在1.2至1.4％之间或其附近。

5. 发明授权

US08385379B2 Optical semiconductor device and pumping light source for optical fiber amplifier 有权
标题翻译：光纤半导体器件和光纤放大器的泵浦光源
公开(公告)号：US08385379B2
公开(公告)日：2013-02-26
申请号：US12683676
申请日：2010-01-07
申请人： Junji Yoshida , Naoki Tsukiji , Hidehiro Taniguchi , Satoshi Irino , Hirokazu Itoh , Harunobu Ikeda , Masako Kobayakawa , Akihiko Kasukawa
发明人： Junji Yoshida , Naoki Tsukiji , Hidehiro Taniguchi , Satoshi Irino , Hirokazu Itoh , Harunobu Ikeda , Masako Kobayakawa , Akihiko Kasukawa
IPC分类号： H01S5/00
CPC分类号： H01L33/60 , B82Y20/00 , H01L2924/0002 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/2206 , H01S5/2222 , H01S5/2275 , H01S5/3406 , H01S5/3434 , H01L2924/00
摘要： A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.
摘要翻译：本发明的半导体器件形成为使n型InP电流阻挡层进入p型InP包覆层的内部，即，n型电流阻挡层越过p型InP包覆层的上部使得构成电流阻挡区域的n型InP电流阻挡层之间的距离比与n型InP电流阻挡层接触的p型覆层的宽度窄。因此，可以容易地制造其电流阻挡区域中的漏电流可以减小的半导体器件，其允许高输出和高温操作。

6. 发明授权

US07072373B2 Ridge waveguide semiconductor laser diode 失效
标题翻译：脊波导半导体激光二极管
公开(公告)号：US07072373B2
公开(公告)日：2006-07-04
申请号：US10626104
申请日：2003-07-23
申请人： Michio Ohkubo , Yoshikazu Ikegami , Takeshi Namegaya , Akihiko Kasukawa , Junji Yoshida
发明人： Michio Ohkubo , Yoshikazu Ikegami , Takeshi Namegaya , Akihiko Kasukawa , Junji Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S2301/18
摘要： A GaAs based semiconductor laser having a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness “D” which satisfies 1.1×W>D≧0.5×W wherein W is the width of a spot size having a strength of 1/e2 as measured at the laser front facet in a direction perpendicular to the active layers, wherein “e” is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current.
摘要翻译：一种GaAs基半导体激光器，其具有包括脊结构部分的包覆层和覆盖激光器的有源层的剩余部分和夹在脊部结构部分和其余部分之间的蚀刻停止层的组合。其余部分优选地覆盖在激光有源层的整个表面上，并且具有满足1.1×W> D> = 0.5×W的厚度“D”，其中W是强度为1 / e 2的光点尺寸的宽度， / SUP>，在垂直于有源层的方向上在激光器前刻面处测量，其中“e”是自然对数的基数。半导体激光器解决了扭结现象，以获得光输出功率和注入电流之间的良好的线性关系。

7. 发明申请

US20110164641A1 OPTICAL SEMICONDUCTOR DEVICE AND PUMPING LIGHT SOURCE FOR OPTICAL FIBER AMPLIFIER 有权
标题翻译：光纤放大器的光学半导体器件和泵浦光源
公开(公告)号：US20110164641A1
公开(公告)日：2011-07-07
申请号：US12683676
申请日：2010-01-07
申请人： Junji Yoshida , Naoki Tsukiji , Hidehiro Taniguchi , Satoshi Irino , Hirokazu Itoh , Harunobu Ikeda , Masako Kobayakawa , Akihiko Kasukawa
发明人： Junji Yoshida , Naoki Tsukiji , Hidehiro Taniguchi , Satoshi Irino , Hirokazu Itoh , Harunobu Ikeda , Masako Kobayakawa , Akihiko Kasukawa
IPC分类号： H01S5/34 , H01S5/026
CPC分类号： H01L33/60 , B82Y20/00 , H01L2924/0002 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/2206 , H01S5/2222 , H01S5/2275 , H01S5/3406 , H01S5/3434 , H01L2924/00
摘要： A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.
摘要翻译：本发明的半导体器件形成为使n型InP电流阻挡层进入p型InP包覆层的内部，即，n型电流阻挡层越过p型InP包覆层的上部使得构成电流阻挡区域的n型InP电流阻挡层之间的距离比与n型InP电流阻挡层接触的p型覆层的宽度窄。因此，可以容易地制造其电流阻挡区域中的漏电流可以减小的半导体器件，其允许高输出和高温操作。

8. 发明授权

US07061954B2 Semiconductor optical waveguide structure 失效
标题翻译：半导体光波导结构
公开(公告)号：US07061954B2
公开(公告)日：2006-06-13
申请号：US09888930
申请日：2001-06-25
申请人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
发明人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
IPC分类号： H01S5/026
CPC分类号： G02B6/1228 , G02B6/131 , G02B6/305 , G02B2006/12195
摘要： A method for manufacturing a semiconductor optical waveguide comprises the steps of forming a core layer having an Al content which monotonically increases from the central part thereof to the film surface, and selectively oxidizing the core layer to obtain a peripheral, oxidized region and a central, non-oxidized region acting as a waveguide. The waveguide is tapered to have a circular mode field at the distal end thereof for efficiently coupling with an optical fiber.
摘要翻译：一种制造半导体光波导的方法包括以下步骤：形成具有从中心部分到膜表面单调增加的Al含量的芯层，并且选择性地氧化芯层以获得周边，氧化区域和中心，作为波导的非氧化区域。波导在其远端处具有圆形模场，以有效地与光纤耦合。

9. 发明授权

US06528337B1 Process of producing semiconductor layer structure 有权
标题翻译：制造半导体层结构的工艺
公开(公告)号：US06528337B1
公开(公告)日：2003-03-04
申请号：US09544982
申请日：2000-04-07
申请人： Satoshi Arakawa , Toshikazu Mukaihara , Nobumitsu Yamanaka , Akihiko Kasukawa
发明人： Satoshi Arakawa , Toshikazu Mukaihara , Nobumitsu Yamanaka , Akihiko Kasukawa
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L33/06 , H01S5/2275 , H01S5/34306 , H01S5/3434 , H01S5/4043 , H01S5/4087
摘要： Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation.
摘要翻译：公开了一种从相同的量子阱结构产生发射具有多个发光波长的光的半导体层结构的方法。层结构具有层结构，其具有位于下限光层和上光限制层之间的量子阱结构。量子阱结构的至少一部分是具有比其它部分更短的发光波长的区域。该区域是通过外延生长在半导体衬底上堆叠下包层，下光限制层，量子阱结构，上光限制层和具有第一导电类型的第一半导体层，并进一步堆叠第二半导体层与第一半导体层的整个表面或第一半导体层的部分表面具有相反的导电类型。该第二半导体层可以在形成之后被去除。

10. 发明授权

US06281523B1 Semiconductor optical waveguide 失效
标题翻译：半导体光波导
公开(公告)号：US06281523B1
公开(公告)日：2001-08-28
申请号：US08961851
申请日：1997-10-31
申请人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
发明人： Norihiro Iwai , Kazuaki Nishikata , Akihiko Kasukawa
IPC分类号： H01L2701
CPC分类号： G02B6/1228 , G02B6/131 , G02B6/305 , G02B2006/12195
摘要： A method for manufacturing a semiconductor optical waveguide comprises the steps of forming a core layer having an Al content which monotonically increases from the central part thereof to the film surface, and selectively oxidizing the core layer to obtain a peripheral, oxidized region and a central, non-oxidized region acting as a waveguide. The waveguide is tapered to have a circular mode field at the distal end thereof for efficiently coupling with an optical fiber.
摘要翻译：一种制造半导体光波导的方法包括以下步骤：形成具有从中心部分到膜表面单调增加的Al含量的芯层，并且选择性地氧化芯层以获得周边，氧化区域和中心，作为波导的非氧化区域。波导在其远端处具有圆形模场，以有效地与光纤耦合。

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