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1. 发明授权

US07411298B2 Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权
标题翻译：源极/漏极，薄膜晶体管基板，其制造方法和显示装置
公开(公告)号：US07411298B2
公开(公告)日：2008-08-12
申请号：US11461907
申请日：2006-08-02
申请人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
发明人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译：在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。源极/漏极包括含氮层和纯铝或铝合金薄膜。含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

2. 发明申请

US20070040172A1 Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权
标题翻译：源极/漏极，薄膜晶体管基板，其制造方法和显示装置
公开(公告)号：US20070040172A1
公开(公告)日：2007-02-22
申请号：US11461907
申请日：2006-08-02
申请人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
发明人： Nobuyuki Kawakami , Toshihiro Kugimiya , Hiroshi Gotoh , Katsufumi Tomihisa , Aya Hino
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译：在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。源极/漏极包括含氮层和纯铝或铝合金薄膜。含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

3. 发明申请

US20060275618A1 Display device 审中-公开
标题翻译：显示设备
公开(公告)号：US20060275618A1
公开(公告)日：2006-12-07
申请号：US11431580
申请日：2006-05-11
申请人： Toshihiro Kugimiya , Katsufumi Tomihisa , Aya Hino , Katsutoshi Takagi
发明人： Toshihiro Kugimiya , Katsufumi Tomihisa , Aya Hino , Katsutoshi Takagi
IPC分类号： B32B15/04 , B32B9/00
CPC分类号： G02F1/136286 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.
摘要翻译：一种显示装置，其中包括具有比Al合金低的电阻率的Cu合金膜和透明导电膜的互连电极不直接连接在难熔金属薄膜上，其中Cu合金膜含有Zn和/或Mg 总量为0.1〜3.0原子％，Ni和/或Mn总量为0.1〜5原子％，可以在Cu合金膜和透明电极之间以低电阻率直接连接而不使用阻挡金属并且在应用的情况下例如向液晶显示器提供高显示质量。

4. 发明申请

US20100065847A1 AL ALLOY FILM FOR DISPLAY DEVICE,DISPLAY DEVICE, AND SPUTTERING TARGET 有权
标题翻译：用于显示装置的AL合金膜，显示装置和喷射目标
公开(公告)号：US20100065847A1
公开(公告)日：2010-03-18
申请号：US12312907
申请日：2007-11-27
申请人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
发明人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
IPC分类号： H01L33/00 , H01B5/00 , C23C14/34
CPC分类号： H01L29/4908 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.
摘要翻译：本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置以及显示装置的溅射靶。对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高，接触电阻率低，优选干蚀刻性也优异。

5. 发明授权

US08786090B2 Al alloy film for display device, display device, and sputtering target 有权
标题翻译：铝合金薄膜，显示装置，溅射靶
公开(公告)号：US08786090B2
公开(公告)日：2014-07-22
申请号：US12312907
申请日：2007-11-27
申请人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
发明人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
IPC分类号： H01L29/43
CPC分类号： H01L29/4908 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.
摘要翻译：本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置和显示装置的溅射靶。对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高，接触电阻率低，优选干蚀刻性也优异。

6. 发明授权

US07781767B2 Thin film transistor substrate and display device 有权
标题翻译：薄膜晶体管基板和显示装置
公开(公告)号：US07781767B2
公开(公告)日：2010-08-24
申请号：US11743916
申请日：2007-05-03
申请人： Nobuyuki Kawakami , Hiroshi Gotoh , Aya Hino
发明人： Nobuyuki Kawakami , Hiroshi Gotoh , Aya Hino
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L29/458 , H01L29/78609
摘要： Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.
摘要翻译：公开了一种薄膜晶体管基板，其中可以省略在薄膜晶体管的半导体层和源极和漏极之间形成阻挡金属（不需要在薄膜晶体管的半导体层和源极之间形成阻挡金属和在源极之间形成阻挡金属，漏电极）和显示装置。（1）薄膜晶体管基板具有薄膜晶体管，源电极，漏电极和透明导电膜的半导体层，其中，所述基板具有其中源电极和漏电极直接连接到薄膜晶体管的半导体层，源极和漏极包括含有0.1至6.0原子％的Ni，0.1至1.0原子％的La和0.1至1.5原子％的Si的Al合金薄膜。（2）显示装置具有薄膜晶体管基板。

7. 发明申请

US20070278497A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管基板和显示器件
公开(公告)号：US20070278497A1
公开(公告)日：2007-12-06
申请号：US11743916
申请日：2007-05-03
申请人： Nobuyuki KAWAKAMI , Hiroshi Gotoh , Aya Hino
发明人： Nobuyuki KAWAKAMI , Hiroshi Gotoh , Aya Hino
IPC分类号： H01L33/00
CPC分类号： H01L29/458 , H01L29/78609
摘要： Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.
摘要翻译：公开了一种薄膜晶体管基板，其中可以省略在薄膜晶体管的半导体层和源极和漏极之间形成阻挡金属（不需要在薄膜晶体管的半导体层和源极之间形成阻挡金属和在源极之间形成阻挡金属，漏电极）和显示装置。（1）薄膜晶体管基板具有薄膜晶体管，源电极，漏电极和透明导电膜的半导体层，其中，所述基板具有其中源电极和漏电极直接连接到薄膜晶体管的半导体层，源极和漏极包括含有0.1至6.0原子％的Ni，0.1至1.0原子％的La和0.1至1.5原子％的Si的Al合金薄膜。（2）显示装置具有薄膜晶体管基板。

8. 发明申请

US20100012935A1 CU ALLOY WIRING FILM, TFT ELEMENT FOR FLAT-PANEL DISPLAY USING THE CU ALLOY WIRING FILM, AND CU ALLOY SPUTTERING TARGET FOR DEPOSITING THE CU ALLOY WIRING FILM 有权
标题翻译： CU合金线，用于使用铜合金线的平板显示器的TFT元件和用于沉积铜合金接线的CU合金溅射靶
公开(公告)号：US20100012935A1
公开(公告)日：2010-01-21
申请号：US12517362
申请日：2007-12-04
申请人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
发明人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
IPC分类号： H01L29/786 , H01L23/48 , C23C14/34
CPC分类号： H01L21/32051 , C22C9/00 , C22C9/06 , C23C14/3414 , G02F2001/136295 , G02F2202/28 , H01B1/026 , H01L23/53233 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film.The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.
摘要翻译：本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

9. 发明授权

US07994503B2 Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film 有权
标题翻译： Cu合金布线膜，使用Cu合金布线膜的平板显示用TFT元件和Cu合金布线膜的Cu合金溅射靶
公开(公告)号：US07994503B2
公开(公告)日：2011-08-09
申请号：US12517362
申请日：2007-12-04
申请人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
发明人： Aya Hino , Katsufumi Tomihisa , Hiroshi Gotou , Takashi Onishi
IPC分类号： H01L29/04
CPC分类号： H01L21/32051 , C22C9/00 , C22C9/06 , C23C14/3414 , G02F2001/136295 , G02F2202/28 , H01B1/026 , H01L23/53233 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.
摘要翻译：本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

10. 发明授权

US07943933B2 Thin film transistor substrate and display device with oxygen-containing layer 有权
标题翻译：薄膜晶体管基板和含氧层的显示装置
公开(公告)号：US07943933B2
公开(公告)日：2011-05-17
申请号：US12126527
申请日：2008-05-23
申请人： Aya Hino , Hiroshi Gotou
发明人： Aya Hino , Hiroshi Gotou
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L29/458 , H01L29/4908
摘要： Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.
摘要翻译：本文公开了尽管不存在通常插入在TFT中的源 - 漏电极和半导体层之间的阻挡金属层的表现出良好的特性的TFT基板。 TFT基板可以确保和直接连接TFT的半导体层。薄膜晶体管基板具有基板，半导体层和源极 - 漏极电极。源漏电极由含氧层和纯铜或铜合金薄膜构成。含氧层含有氧，使得部分或全部氧与半导体层中的硅结合。并且，纯铜或铜合金的薄膜通过含氧层与薄膜晶体管的半导体层连接。

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