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1. 发明授权

US5186789A Method of making a cantilever stylus for use in an atomic force microscope 失效
标题翻译：制造用于原子力显微镜的CANTILEVER STYLUS的方法
公开(公告)号：US5186789A
公开(公告)日：1993-02-16
申请号：US799993
申请日：1991-11-29
申请人： Nobuhiro Tsuda , Hirofumi Yamada , Hiroyuki Kado , Takao Tohda
发明人： Nobuhiro Tsuda , Hirofumi Yamada , Hiroyuki Kado , Takao Tohda
IPC分类号： G01B21/30 , B44C1/22 , B81C1/00 , C03C15/00 , C23F1/00 , G01B7/34 , G01Q60/38 , G01Q70/14 , H01J37/28 , H01L21/306
CPC分类号： G01Q60/38 , B82Y35/00
摘要： A cantilever stylus suited for use in an atomic force microscope is made in the following processes: forming a first film on a substrate; forming a second film of metallic material on an external surface of the first film; forming a photoresist film on an external surface of the second film by making use of a photolithography technique; performing etching with respect to the second film with only a portion thereof covered with the photoresist film left on the first film; and further performing etching with respect to the first film with the second film being used as a resist film so that the first film may be configured into a cantilever stylus.

2. 发明授权

US5051594A Fine positioning device, as for the stage of a scanning tunneling microscope 失效
标题翻译：精细定位装置，如扫描隧道显微镜的阶段
公开(公告)号：US5051594A
公开(公告)日：1991-09-24
申请号：US512905
申请日：1990-06-12
申请人： Nobuhiro Tsuda , Hirofumi Yamada , Fumihiko Ishida , Masayuki Miyashita
发明人： Nobuhiro Tsuda , Hirofumi Yamada , Fumihiko Ishida , Masayuki Miyashita
IPC分类号： G01B7/34 , G01B7/00 , G01N23/00 , G01N37/00 , G01Q10/02 , G01Q10/04 , G01Q60/10 , G02B6/38 , G05D3/12 , G12B5/00 , G21K5/10 , H01J37/20 , H01J37/28
CPC分类号： G01Q10/04 , B82Y35/00 , G01B7/003 , H01J37/20 , G02B6/3803 , Y10S977/872
摘要： A fine positioning device such as a stage device for placing a probe or a sample thereon in a scanning tunneling microscope comprises a fixed member, a first structure spring stage having a first base member integral with the fixed member, a first moving member and a first resilient member for resiliently coupling the first base member and the first moving member such that they are displaceable relative to each other in a predetermined direction, a first actuator for displacing the first moving member relative to the base member in the predetermined direction, a second structure spring stage having a second base member integral with the first moving member, a second moving member and a second resilient member for resilient coupling the second base member and the second moving member such that they are displaceable relative to each other in a direction parallel to the predetermined direction, and a second actuator for displacing the second moving member relative to the second base member in the parallel direction.
摘要翻译：诸如用于将探针或样品放置在扫描隧道显微镜中的平台装置的精细定位装置包括固定构件，具有与固定构件一体的第一基座构件的第一结构弹簧台，第一移动构件和第一弹性构件，用于弹性地联接所述第一基座构件和所述第一移动构件，使得所述弹性构件能够沿预定方向相对于彼此移位;第一致动器，用于使所述第一移动构件相对于所述基座构件沿所述预定方向移位;第二构造弹簧台具有与第一移动构件一体的第二基座构件，第二移动构件和第二弹性构件，用于弹性地联接第二基座构件和第二移动构件，使得它们可以在平行于第一移动构件的方向上相对于彼此移动以及用于使第二移动构件相对于第二基底membe移位的第二致动器 r在平行方向。

3. 发明授权

US06807124B2 Memory device for activating one cell by specifying block and memory cell in the block 有权
标题翻译：通过指定块中的块和存储单元来激活一个单元的存储器件
公开(公告)号：US06807124B2
公开(公告)日：2004-10-19
申请号：US10347434
申请日：2003-01-21
申请人： Nobuhiro Tsuda , Koji Nii , Shoji Okuda
发明人： Nobuhiro Tsuda , Koji Nii , Shoji Okuda
IPC分类号： G11C800
CPC分类号： G11C8/12
摘要： A memory device that consumes no wasteful power in selecting memory cells and achieves high operating speed and size and cost reductions, is provided. In reading of memory cell information, only a single memory cell in a single local block is activated through a read word line. Specifically, AND circuits are provided in correspondence with all memory cells. Each AND circuit receives as its inputs a block select signal for selecting one of the local blocks and an in-block memory cell select signal for selecting one of the memory cells in each local block in a common manner among the local blocks. The outputs from the AND circuits are applied to read word lines. Unselected memory cells are not activated and therefore no current flows from those memory cells to local read bit lines, thereby preventing wasteful power consumption.
摘要翻译：提供了在选择存储器单元中消耗浪费电力并实现高操作速度和尺寸和成本降低的存储器件。在读取存储单元信息时，通过读字线仅激活单个本地块中的单个存储单元。具体地，与所有存储单元相对应地提供AND电路。每个AND电路接收用于选择本地块之一的块选择信号和块内存储单元选择信号，用于以局部块中的共同方式选择每个本地块中的一个存储单元。来自“与”电路的输出被应用于读取字线。未选择的存储单元不被激活，因此没有电流从这些存储器单元流到本地读取位线，从而防止浪费的功耗。

4. 发明授权

US06292419B1 Synchronous semiconductor memory device 有权
公开(公告)号：US06292419B1
公开(公告)日：2001-09-18
申请号：US09791566
申请日：2001-02-26
申请人： Nobuhiro Tsuda
发明人： Nobuhiro Tsuda
IPC分类号： G11C700
摘要： The synchronous semiconductor memory device related to the present invention is a synchronous semiconductor memory device in which for one data read signal, the respective data corresponding to a plurality of addresses are sequentially read out from a memory cell in synchronism with an external clock signal, and which comprises a control circuit which executes control according to an externally inputted control signal so as to output only the data corresponding to one address from the memory cell for one data read signal.

5. 发明授权

US08063415B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08063415B2
公开(公告)日：2011-11-22
申请号：US12178204
申请日：2008-07-23
申请人： Nobuhiro Tsuda
发明人： Nobuhiro Tsuda
IPC分类号： H01L23/52
CPC分类号： H01L27/0207
摘要： CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer interconnects extend along a boundary of standard cells adjacent to each other and on the boundary. Upper layer interconnects are positioned more inside in standard cell than lower layer interconnects, as viewed from a plane. CMOS inverters are electrically connected through upper layer interconnects to lower layer interconnects. Thus, a semiconductor device is obtained that can achieve both higher speeds and higher integration.
摘要翻译： CMOS反相器包含在标准单元中。电源线电连接到CMOS反相器，并且包括下层互连和上层互连。下层互连沿着彼此相邻并且在边界上的标准单元的边界延伸。从平面观察，上层互连比下层互连更多地位于标准单元内。 CMOS反相器通过上层互连电连接到下层互连。因此，获得能够实现更高速度和更高集成度的半导体器件。

6. 发明授权

US5343432A Semiconductor memory device having equalization terminated in direct response to a change in word line signal 失效
标题翻译：具有直接响应于字线信号变化的均衡终止的半导体存储器件
公开(公告)号：US5343432A
公开(公告)日：1994-08-30
申请号：US669725
申请日：1991-03-14
申请人： Ryuichi Matsuo , Ryuichi Kosugi , Nobuhiro Tsuda , Osamu Ishizaki
发明人： Ryuichi Matsuo , Ryuichi Kosugi , Nobuhiro Tsuda , Osamu Ishizaki
IPC分类号： G11C11/41 , G11C7/12 , G11C8/18 , G11C7/00 , G11C8/00
CPC分类号： G11C7/12 , G11C8/18
摘要： A semiconductor memory device includes an array of memory cells arranged in rows and columns; a plurality of word lines connected to the rows of the memory cells; a plurality of bit lines connected to the columns of the memory cells; word line selection means; bit line selection means; and equalizing means for equalizing the bit line to a desired voltage level in response to an address signal, and for terminating the equalization in response to change in a signal on a word line according to change in the address signal.
摘要翻译：半导体存储器件包括排列成行和列的存储单元阵列; 连接到存储器单元的行的多个字线; 连接到存储器单元的列的多个位线; 字线选择手段; 位线选择手段; 以及均衡装置，用于响应于地址信号将位线均衡到期望的电压电平，并且响应于根据地址信号的变化在字线上的信号的变化来终止均衡。

7. 发明授权

US08264011B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08264011B2
公开(公告)日：2012-09-11
申请号：US13248965
申请日：2011-09-29
申请人： Nobuhiro Tsuda
发明人： Nobuhiro Tsuda
IPC分类号： H01L23/52
CPC分类号： H01L27/0207
摘要： CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer interconnects extend along a boundary of standard cells adjacent to each other and on the boundary. Upper layer interconnects are positioned more inside in standard cell than lower layer interconnects, as viewed from a plane. CMOS inverters are electrically connected through upper layer interconnects to lower layer interconnects. Thus, a semiconductor device is obtained that can achieve both higher speeds and higher integration.
摘要翻译： CMOS反相器包含在标准单元中。电源线电连接到CMOS反相器，并且包括下层互连和上层互连。下层互连沿着彼此相邻并且在边界上的标准单元的边界延伸。从平面观察，上层互连比下层互连更多地位于标准单元内。 CMOS反相器通过上层互连电连接到下层互连。因此，获得能够实现更高速度和更高集成度的半导体器件。

8. 发明授权

US08710552B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08710552B2
公开(公告)日：2014-04-29
申请号：US13538602
申请日：2012-06-29
申请人： Nobuhiro Tsuda , Hidekatsu Nishimaki , Hiroshi Omura , Yuko Yoshifuku
发明人： Nobuhiro Tsuda , Hidekatsu Nishimaki , Hiroshi Omura , Yuko Yoshifuku
IPC分类号： H01L27/088
CPC分类号： H01L27/0928 , H01L27/0207 , H01L27/092 , H01L27/11803 , H01L27/11898
摘要： A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch.
摘要翻译： pMIS区域设置在沿第一方向延伸并且穿过多个标准单元和第一外围边缘中的每一个的边界之间。 nMIS区域设置在边界和第二周边边缘之间。电源布线和接地布线分别沿着第一和第二外围边缘延伸。多个pMIS布线和多个nMIS布线分别布置在沿着第一方向延伸并且沿第二方向以单个间距布置的多个第一虚拟线和多条第二虚拟线上。最接近边界的第一虚拟线和最靠近边界的第二虚拟线之间具有大于单个间距的间距。

9. 发明授权

US08237203B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08237203B2
公开(公告)日：2012-08-07
申请号：US12536319
申请日：2009-08-05
申请人： Nobuhiro Tsuda , Hidekatsu Nishimaki , Hiroshi Omura , Yuko Yoshifuku
发明人： Nobuhiro Tsuda , Hidekatsu Nishimaki , Hiroshi Omura , Yuko Yoshifuku
IPC分类号： H01L27/088
CPC分类号： H01L27/0928 , H01L27/0207 , H01L27/092 , H01L27/11803 , H01L27/11898
摘要： A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch.
摘要翻译： pMIS区域设置在沿第一方向延伸并且穿过多个标准单元和第一外围边缘中的每一个的边界之间。 nMIS区域设置在边界和第二周边边缘之间。电源布线和接地布线分别沿着第一和第二外围边缘延伸。多个pMIS布线和多个nMIS布线分别布置在沿着第一方向延伸并且沿第二方向以单个间距布置的多个第一虚拟线和多条第二虚拟线上。最接近边界的第一虚拟线和最靠近边界的第二虚拟线之间具有大于单个间距的间距。

10. 发明授权

US06208576B1 Synchronous semiconductor memory device 失效
标题翻译：同步半导体存储器件
公开(公告)号：US06208576B1
公开(公告)日：2001-03-27
申请号：US09231870
申请日：1999-01-14
申请人： Nobuhiro Tsuda
发明人： Nobuhiro Tsuda
IPC分类号： G11C700
CPC分类号： G11C7/1057 , G11C7/1018 , G11C7/1051 , G11C7/106 , G11C7/1072 , G11C7/1078
摘要： The synchronous semiconductor memory device related to the present invention is a synchronous semiconductor memory device in which for one data read signal, the respective data corresponding to a plurality of addresses are sequentially read out from a memory cell in synchronism with an external clock signal, and which comprises a control circuit which executes control according to an externally inputted control signal so as to output only the data corresponding to one address from the memory cell for one data read signal.
摘要翻译：与本发明有关的同步半导体存储器件是同步半导体存储器件，其中对于一个数据读取信号，与外部时钟信号同步地从存储器单元顺序读出与多个地址相对应的各个数据，以及其包括控制电路，该控制电路根据外部输入的控制信号执行控制，以仅从一个数据读取信号的存储器单元输出对应于一个地址的数据。

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