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1. 发明申请

US20060141750A1 Semiconductor integrated device and method for manufacturing same 审中-公开
标题翻译：半导体集成器件及其制造方法
公开(公告)号：US20060141750A1
公开(公告)日：2006-06-29
申请号：US10529465
申请日：2003-11-12
申请人： Nobuhiro Suzuki , Kenji Imai , Isaya Kitamura , Keiichi Yamaguchi
发明人： Nobuhiro Suzuki , Kenji Imai , Isaya Kitamura , Keiichi Yamaguchi
IPC分类号： H01L21/78
CPC分类号： H01L24/10 , H01L21/3043 , H01L21/76898 , H01L21/78 , H01L23/3114 , H01L24/13 , H01L2224/05001 , H01L2224/05008 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05548 , H01L2224/05569 , H01L2224/13 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/00 , H01L2224/05599
摘要： A method for manufacturing a semiconductor integrated device includes steps of forming an integrated circuit element on a semiconductor substrate, forming internal wiring, forming a groove along a scribe line on a back surface of the semiconductor substrate to expose a portion of the internal wiring, forming a metal film covering at least the groove, patterning the metal film to form external wiring and removing the metal film at a bottom portion of the groove, forming a protection film covering the external wiring and the bottom portion of the groove, and separating the semiconductor substrate along the scribe line.
摘要翻译：一种半导体集成器件的制造方法，其特征在于，包括在半导体衬底上形成集成电路元件，形成内部配线的步骤，在半导体衬底的背面沿着划线形成沟槽，露出内部配线的一部分，形成至少覆盖所述槽的金属膜，图案化所述金属膜以形成外部布线，并且在所述槽的底部除去所述金属膜，形成覆盖所述外部布线和所述槽的底部的保护膜，以及将所述半导体基板沿着划线。

2. 发明申请

US20050258349A1 Photoelectric converter device and manufacturing method thereof 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20050258349A1
公开(公告)日：2005-11-24
申请号：US11131055
申请日：2005-05-17
申请人： Hisashi Matsuyama , Isaya Kitamura
发明人： Hisashi Matsuyama , Isaya Kitamura
IPC分类号： H01L27/14 , G01J1/04 , G01J3/50 , H01L23/12 , H01L31/00 , H01L31/02
CPC分类号： G01J1/04 , G01J1/0209 , G01J1/0492 , H01L31/0203 , H01L31/02162 , H01L31/18
摘要： A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.
摘要翻译：光电转换器装置包括：半导体衬底，其包括在其表面上形成的光电转换元件，布置成至少部分地覆盖半导体衬底的表面的可见光滤光器;以及附着到半导体衬底表面的支撑构件。光电转换元件在内部还包括吸收红外光的树脂层。通过这种布置，可以减少不期望的红外光的影响。

3. 发明申请

US20130240714A1 OPTICAL SENSOR, LENS MODULE, AND CAMERA MODULE 有权
标题翻译：光学传感器，镜头模块和摄像机模块
公开(公告)号：US20130240714A1
公开(公告)日：2013-09-19
申请号：US13814699
申请日：2011-08-11
申请人： Yoshihito Higashitsutsumi , Satoshi Shimizu , Isaya Kitamura , Masami Suzuki
发明人： Yoshihito Higashitsutsumi , Satoshi Shimizu , Isaya Kitamura , Masami Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , G02B5/201 , H01L27/14618 , H01L27/14621 , H01L27/14625 , H01L2924/0002 , H04N1/00307 , H04N5/2253 , H04N5/2254 , H04N5/2257 , H04N9/04 , H04N9/07 , H01L2924/00
摘要： An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.
摘要翻译：本文描述了光学传感器。作为示例，光学传感器包括在图像传感器的第一光接收表面上的第一滤光器和在图像传感器的第二光接收表面上的第二滤光器。第二光接收表面在图像传感器的与第一光接收表面相反的一侧。第一滤光器的特性与第二滤光器的特性不同。

4. 发明授权

US09153611B2 Double-sided optical sensor for a camera module 有权
标题翻译：用于相机模块的双面光学传感器
公开(公告)号：US09153611B2
公开(公告)日：2015-10-06
申请号：US13814699
申请日：2011-08-11
申请人： Yoshihito Higashitsutsumi , Satoshi Shimizu , Isaya Kitamura , Masami Suzuki
发明人： Yoshihito Higashitsutsumi , Satoshi Shimizu , Isaya Kitamura , Masami Suzuki
IPC分类号： H01L27/00 , H04N3/14 , H01L27/146 , G02B5/20 , H04N1/00 , H04N5/225 , H04N9/04 , H04N9/07
CPC分类号： H01L27/14601 , G02B5/201 , H01L27/14618 , H01L27/14621 , H01L27/14625 , H01L2924/0002 , H04N1/00307 , H04N5/2253 , H04N5/2254 , H04N5/2257 , H04N9/04 , H04N9/07 , H01L2924/00
摘要： An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.
摘要翻译：本文描述了光学传感器。作为示例，光学传感器包括在图像传感器的第一光接收表面上的第一滤光器和在图像传感器的第二光接收表面上的第二滤光器。第二光接收表面在图像传感器的与第一光接收表面相反的一侧。第一滤光器的特性与第二滤光器的特性不同。

5. 发明授权

US07282696B2 Photoelectric converter device and manufacturing method thereof 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US07282696B2
公开(公告)日：2007-10-16
申请号：US11131055
申请日：2005-05-17
申请人： Hisashi Matsuyama , Isaya Kitamura
发明人： Hisashi Matsuyama , Isaya Kitamura
IPC分类号： G01J3/50
CPC分类号： G01J1/04 , G01J1/0209 , G01J1/0492 , H01L31/0203 , H01L31/02162 , H01L31/18
摘要： A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.
摘要翻译：光电转换器装置包括：半导体衬底，其包括在其表面上形成的光电转换元件，布置成至少部分地覆盖半导体衬底的表面的可见光滤光器;以及附着到半导体衬底表面的支撑构件。光电转换元件在内部还包括吸收红外光的树脂层。通过这种布置，可以减少不期望的红外光的影响。

6. 发明授权

US08410569B2 Solid-state imaging device and method for producing the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08410569B2
公开(公告)日：2013-04-02
申请号：US12842583
申请日：2010-07-23
申请人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Mayoshi Aonuma , Hiroshi Yoshioka
发明人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Mayoshi Aonuma , Hiroshi Yoshioka
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要翻译：固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

7. 发明申请

US20110024858A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110024858A1
公开(公告)日：2011-02-03
申请号：US12842583
申请日：2010-07-23
申请人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Masayoshi Aonuma , Hiroshi Yoshioka
发明人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Masayoshi Aonuma , Hiroshi Yoshioka
IPC分类号： H01L31/0232 , H01L31/02 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要翻译：固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

8. 发明授权

US5483090A Solid-state image pickup device and method for manufacturing such device 失效
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US5483090A
公开(公告)日：1996-01-09
申请号：US225004
申请日：1994-04-07
申请人： Isaya Kitamura , Yoshiki Nakamura , Masakazu Inami , Yoshihiro Okada
发明人： Isaya Kitamura , Yoshiki Nakamura , Masakazu Inami , Yoshihiro Okada
IPC分类号： H01L27/148 , H01L29/423 , H01L29/768
CPC分类号： H01L29/42396 , H01L27/14831
摘要： A plurality of channel separting regions are formed on a substrate with a space therebetween to segment an channel region. A first insulating layer is formed on the substrate, and a polycrystalline silicon layer is formed thereon and is then subject to patterning so as to provide a plurality of first transfer electrodes in the direction crossing the channel separating region. A second insulating layer is formed on the first transfer electrode and on the substrate having been exposed by the patterning, and a second transfer electrodes are formed at a position between the first transfer electrodes on the second insulating layer. By setting the thickness of each transfer electrodes and the each insulating layer to a predetermined value, the interference of the visible light is controlled, and the transparency rate of the visible light is improved. Further, by increasing the thickness of the transfer electrode at regions other than the light-receiving region, the contact with the electrode is improved, and the operation at regions other than the light-receiving region is improved.
摘要翻译：在基板上形成多个通道分离区域，其间具有间隔以分割通道区域。在基板上形成第一绝缘层，在其上形成多晶硅层，然后进行图案化，以便在与沟道分离区域交叉的方向上提供多个第一传输电极。在第一传输电极上形成第二绝缘层，并且在通过图案化曝光的基板上形成第二绝缘层，并且在第二绝缘层上的第一传输电极之间的位置处形成第二传输电极。通过将每个转印电极和每个绝缘层的厚度设定为预定值，可以控制可见光的干涉，提高可见光的透过率。此外，通过增加转印电极在光接收区域以外的区域的厚度，可以提高与电极的接触，提高了光接收区域以外的区域的动作。

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