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1. 发明授权

US08410569B2 Solid-state imaging device and method for producing the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08410569B2
公开(公告)日：2013-04-02
申请号：US12842583
申请日：2010-07-23
申请人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Mayoshi Aonuma , Hiroshi Yoshioka
发明人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Mayoshi Aonuma , Hiroshi Yoshioka
IPC分类号： H01L27/146
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要翻译：固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

2. 发明申请

US20110024858A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110024858A1
公开(公告)日：2011-02-03
申请号：US12842583
申请日：2010-07-23
申请人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Masayoshi Aonuma , Hiroshi Yoshioka
发明人： Ikuo Yoshihara , Masaya Nagata , Naoto Sasaki , Taku Umebayashi , Hiroshi Takahashi , Yoichi Otsuka , Isaya Kitamura , Tokihisa Kaneguchi , Keishi Inoue , Toshihiko Hayashi , Hiroyasu Matsugai , Masayoshi Aonuma , Hiroshi Yoshioka
IPC分类号： H01L31/0232 , H01L31/02 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要翻译：固态成像装置包括：第一基板，包括被配置为执行入射光的光电转换的光感测部分和设置在光入射侧的布线部分; 光学透明的第二基板，设置在所述第一基板的布线部侧一定距离; 设置在所述第一基板中的通孔; 通孔，设置在通孔中; 连接到所述通孔并设置在所述第一基板的前表面上的前表面侧电极; 连接到所述通孔并设置在所述第一基板的背面上的背面侧电极; 以及设置在前表面侧电极上并填充前表面侧电极和第二基板之间的间隔的止动电极。

3. 发明申请

US20120211849A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR LAMINATING SEMICONDUCTOR WAFERS, AND ELECTRONIC DEVICE 有权
标题翻译：半导体器件，制造半导体器件的方法，层叠半导体器件的方法和电子器件
公开(公告)号：US20120211849A1
公开(公告)日：2012-08-23
申请号：US13365717
申请日：2012-02-03
申请人： Hiroyasu Matsugai
发明人： Hiroyasu Matsugai
IPC分类号： H01L31/0232 , H01L21/762 , H01L31/02
CPC分类号： H01L27/1464 , H01L21/02021 , H01L27/146 , H01L27/1462 , H01L27/14632 , H01L27/14634 , H01L27/14683 , H01L27/14685 , H01L27/14689 , H01L2225/06558
摘要： A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on the wiring layer, the level difference being formed at a boundary between a peripheral region of the first semiconductor wafer and an inside region being on an inside of the peripheral region, and the level difference being formed as a result of a surface over the wiring layer in the peripheral region being formed lower than a surface over the wiring layer in the inside region, and making the surfaces over the wiring layer in the peripheral region and the inside region substantially flush with each other; and opposing and laminating the surfaces over the wiring layer formed in the first semiconductor wafer to a desired surface of a second semiconductor wafer.
摘要翻译：一种制造半导体器件的方法，包括：在第一半导体晶片的表面侧形成布线层; 形成掩埋膜，以便在布线层上填充电平差，在第一半导体晶片的周边区域和周边区域的内侧区域之间的边界处形成的电平差，由于周边区域中的布线层上的表面形成为比内部区域中的布线层的表面低的方式形成的差异，并且使周边区域和内部区域中的布线层的表面大致齐平彼此; 并且将形成在第一半导体晶片中的布线层上的表面相对并层压到第二半导体晶片的期望表面。

4. 发明授权

US09472472B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09472472B2
公开(公告)日：2016-10-18
申请号：US13410389
申请日：2012-03-02
申请人： Hiroyasu Matsugai , Kiyotaka Tabuchi
发明人： Hiroyasu Matsugai , Kiyotaka Tabuchi
IPC分类号： H01L21/30 , H01L21/66 , H01L27/146 , H01L21/768 , H01L23/00 , H01L25/065 , H01L25/00 , H01L27/06
CPC分类号： H01L27/14634 , H01L21/76898 , H01L22/12 , H01L22/20 , H01L23/562 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L27/14636 , H01L27/1469 , H01L2224/08145 , H01L2224/16 , H01L2224/24147 , H01L2224/80896 , H01L2224/8203 , H01L2224/92 , H01L2225/06541 , H01L2924/13091 , H01L2924/00 , H01L2224/80001 , H01L2224/82
摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.
摘要翻译：半导体器件包括第一半导体衬底，第二半导体衬底，第一半导体衬底的第一主表面侧和第二半导体衬底的第一主表面侧彼此结合; 以及翘曲修正层，其形成在从所述第一半导体基板的所述第一主面侧，所述第二半导体基板的所述第一主面侧，所述第一半导体基板的第二主面侧以及第二半导体衬底的第二主表面侧。

5. 发明申请

US20130134540A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US20130134540A1
公开(公告)日：2013-05-30
申请号：US13809522
申请日：2011-07-08
申请人： Kensaku Maeda , Hiroyasu Matsugai , Yusuke Moriya
发明人： Kensaku Maeda , Hiroyasu Matsugai , Yusuke Moriya
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14685 , H01L31/02327
摘要： The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.
摘要翻译：本发明涉及具有良好聚焦性质的固态成像装置，这种固态成像装置的制造方法以及电子装置。固态成像装置具有形成在半导体基板11中的半导体基板11和光电转换部。在固态成像装置中，在半导体基板上形成有机材料层和无机材料层的层叠体，插入有机层和无机材料层之间的至少一个应力松弛层22。该技术适用于例如具有放置在其上的像素和微透镜的固态成像装置。

6. 发明申请

US20100314704A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MAKING THE SAME, AND IMAGING APPARATUS 有权
标题翻译：固态成像装置及其制造方法以及成像装置
公开(公告)号：US20100314704A1
公开(公告)日：2010-12-16
申请号：US12783227
申请日：2010-05-19
申请人： Hiroyasu Matsugai
发明人： Hiroyasu Matsugai
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14632 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14629
摘要： A solid-state imaging device includes a light receiving unit formed in a semiconductor base and configured to perform photoelectric conversion; an insulating layer disposed on the semiconductor base; a film constituting a cladding of a waveguide together with the insulating layer and being formed in an outer part of an interior of a hole by coating, the hole being formed in the insulating layer above the light receiving unit; a core of the waveguide, the core being composed of a material having a higher refractive index than a material for the insulating layer and a material for the film formed by coating, the core being formed in an inner part of the interior of the hole; and an inner lens integrated with the waveguide, the inner lens having a lens surface formed at the bottom of the hole at the interface between the film formed by coating and the core.
摘要翻译：一种固态成像装置，包括形成在半导体基底中并被配置为进行光电转换的光接收单元; 设置在半导体基底上的绝缘层; 与绝缘层一起构成波导的包层的膜，并且通过涂布形成在孔的内部的外部，所述孔形成在光接收单元上方的绝缘层中; 所述芯由所述绝缘层材料具有较高折射率的材料和通过涂覆形成的所述膜形成的材料构成，所述芯形成在所述孔内部的内部; 以及与所述波导成一体的内透镜，所述内透镜具有在所述孔的底部形成在由涂覆形成的膜与所述芯之间的界面处的透镜表面。

7. 发明授权

US08710608B2 Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus 有权
标题翻译：固态成像装置，固态成像装置的制造方法以及电子装置
公开(公告)号：US08710608B2
公开(公告)日：2014-04-29
申请号：US13809522
申请日：2011-07-08
申请人： Kensaku Maeda , Hiroyasu Matsugai , Yusuke Moriya
发明人： Kensaku Maeda , Hiroyasu Matsugai , Yusuke Moriya
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14685 , H01L31/02327
摘要： The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.
摘要翻译：本发明涉及具有良好聚焦性质的固态成像装置，这种固态成像装置的制造方法以及电子装置。固态成像装置具有形成在半导体基板11中的半导体基板11和光电转换部。在固态成像装置中，在半导体基板上形成有机材料层和无机材料层的层叠体，插入有机层和无机材料层之间的至少一个应力松弛层22。该技术适用于例如具有放置在其上的像素和微透镜的固态成像装置。

8. 发明授权

US08859391B2 Semiconductor device, method for manufacturing semiconductor device, method for laminating semiconductor wafers, and electronic device 有权
标题翻译：半导体装置，半导体装置的制造方法，层叠半导体晶片的方法以及电子装置
公开(公告)号：US08859391B2
公开(公告)日：2014-10-14
申请号：US13365717
申请日：2012-02-03
申请人： Hiroyasu Matsugai
发明人： Hiroyasu Matsugai
IPC分类号： H01L31/14 , H01L27/146 , H01L21/02
CPC分类号： H01L27/1464 , H01L21/02021 , H01L27/146 , H01L27/1462 , H01L27/14632 , H01L27/14634 , H01L27/14683 , H01L27/14685 , H01L27/14689 , H01L2225/06558
摘要： A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on the wiring layer, the level difference being formed at a boundary between a peripheral region of the first semiconductor wafer and an inside region being on an inside of the peripheral region, and the level difference being formed as a result of a surface over the wiring layer in the peripheral region being formed lower than a surface over the wiring layer in the inside region, and making the surfaces over the wiring layer in the peripheral region and the inside region substantially flush with each other; and opposing and laminating the surfaces over the wiring layer formed in the first semiconductor wafer to a desired surface of a second semiconductor wafer.
摘要翻译：一种制造半导体器件的方法，包括：在第一半导体晶片的表面侧形成布线层; 形成掩埋膜，以便在布线层上填充电平差，在第一半导体晶片的周边区域和周边区域的内侧区域之间的边界处形成的电平差，由于周边区域中的布线层上的表面形成为比内部区域中的布线层的表面低的方式形成的差异，并且使周边区域和内部区域中的布线层的表面大致齐平彼此; 并且将形成在第一半导体晶片中的布线层上的表面相对并层压到第二半导体晶片的期望表面。

9. 发明授权

US08384173B2 Solid-state imaging device and method for making the same, and imaging apparatus 有权
标题翻译：固态成像装置及其制造方法以及成像装置
公开(公告)号：US08384173B2
公开(公告)日：2013-02-26
申请号：US12783227
申请日：2010-05-19
申请人： Hiroyasu Matsugai
发明人： Hiroyasu Matsugai
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14629
摘要： A solid-state imaging device includes a light receiving unit formed in a semiconductor base and configured to perform photoelectric conversion; an insulating layer disposed on the semiconductor base; a film constituting a cladding of a waveguide together with the insulating layer and being formed in an outer part of an interior of a hole by coating, the hole being formed in the insulating layer above the light receiving unit; a core of the waveguide, the core being composed of a material having a higher refractive index than a material for the insulating layer and a material for the film formed by coating, the core being formed in an inner part of the interior of the hole; and an inner lens integrated with the waveguide, the inner lens having a lens surface formed at the bottom of the hole at the interface between the film formed by coating and the core.
摘要翻译：一种固态成像装置，包括形成在半导体基底中并被配置为进行光电转换的光接收单元; 设置在半导体基底上的绝缘层; 与绝缘层一起构成波导的包层的膜，并且通过涂布形成在孔的内部的外部，所述孔形成在光接收单元上方的绝缘层中; 所述芯由所述绝缘层材料具有较高折射率的材料和通过涂覆形成的所述膜形成的材料构成，所述芯形成在所述孔内部的内部; 以及与所述波导成一体的内透镜，所述内透镜具有在所述孔的底部形成在由涂覆形成的膜与所述芯之间的界面处的透镜表面。

10. 发明申请

US20120248580A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120248580A1
公开(公告)日：2012-10-04
申请号：US13410389
申请日：2012-03-02
申请人： Hiroyasu Matsugai , Kiyotaka Tabuchi
发明人： Hiroyasu Matsugai , Kiyotaka Tabuchi
IPC分类号： H01L23/522 , H01L21/66
CPC分类号： H01L27/14634 , H01L21/76898 , H01L22/12 , H01L22/20 , H01L23/562 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L27/14636 , H01L27/1469 , H01L2224/08145 , H01L2224/16 , H01L2224/24147 , H01L2224/80896 , H01L2224/8203 , H01L2224/92 , H01L2225/06541 , H01L2924/13091 , H01L2924/00 , H01L2224/80001 , H01L2224/82
摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, a first main surface side of the first semiconductor substrate and a first main surface side of the second semiconductor substrate being bonded to each other; and a warpage correction layer which is formed on at least one or more selected from the first main surface side of the first semiconductor substrate, the first main surface side of the second semiconductor substrate, a second main surface side of the first semiconductor substrate, and a second main surface side of the second semiconductor substrate.
摘要翻译：半导体器件包括第一半导体衬底，第二半导体衬底，第一半导体衬底的第一主表面侧和第二半导体衬底的第一主表面侧彼此结合; 以及翘曲修正层，其形成在从所述第一半导体基板的所述第一主面侧，所述第二半导体基板的所述第一主面侧，所述第一半导体基板的第二主面侧以及第二半导体衬底的第二主表面侧。

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