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1. 发明授权

US07222118B2 Computer program product for accessing database, recording medium recording database access program therein, and database access method 有权
标题翻译：用于访问数据库的计算机程序产品，其中记录介质记录数据库访问程序和数据库访问方法
公开(公告)号：US07222118B2
公开(公告)日：2007-05-22
申请号：US10405699
申请日：2003-04-03
申请人： Nobuhiro Nakamura , Kazuhisa Ikeda
发明人： Nobuhiro Nakamura , Kazuhisa Ikeda
IPC分类号： G06F17/30 , G06F9/44 , G06F9/45
CPC分类号： G06F17/30398 , Y10S707/99934
摘要： A computer program product for accessing a database is a program product for accessing a database by allowing a computer to execute a plurality of screen components, including a step of designating order of the plurality of screen components to be executed by the computer. Each of the plurality of screen components includes: a step of generating a part except for a “where” clause in an SQL statement in accordance with definition given from the outside for each screen component; a step of generating a screen for inputting and/or outputting data; and a step of generating the “where” clause in the SQL statement in accordance with definition given from the outside for each screen component. Since the screen component as a part of the database access program processes the steps in accordance with definition given from the outside, the screen component can be used by another database access program. Thus, general versatility is obtained and development efficiency is improved.
摘要翻译：用于访问数据库的计算机程序产品是用于通过允许计算机执行多个屏幕组件来访问数据库的程序产品，包括指定要由计算机执行的多个屏幕组件的顺序的步骤。多个屏幕组件中的每一个包括：根据对于每个屏幕组件从外部给出的定义，在SQL语句中生成除“where”子句之外的部分的步骤; 生成用于输入和/或输出数据的画面的步骤; 并且根据从外部为每个屏幕组件给出的定义在SQL语句中生成“where”子句。由于屏幕组件作为数据库访问程序的一部分，根据从外部给出的定义处理步骤，屏幕组件可以被另一个数据库访问程序使用。因此，获得了通用性，提高了开发效率。

2. 发明授权

US06267010B1 Integrated sensor device 失效
标题翻译：集成传感器装置
公开(公告)号：US06267010B1
公开(公告)日：2001-07-31
申请号：US08948826
申请日：1997-10-10
申请人： Makoto Hatanaka , Kazuhisa Ikeda
发明人： Makoto Hatanaka , Kazuhisa Ikeda
IPC分类号： G01L1904
CPC分类号： G01L19/0092 , G01D11/245 , G01K13/02 , G01L19/0645 , G01L19/142
摘要： An integrated sensor device includes first and second housings combined together and is attached to a wall of a conduit via a joint portion thereof. Specifically, the first housing has the joint portion and a pressure conducting hole and holds a temperature measuring unit therein for detecting a temperature of a medium flowing in the conduit. The second housing holds a pressure measuring unit therein for measuring a pressure of the medium which has been conducted through the pressure conducting hole. Accordingly, several measuring units (sensors) can be attached to one portion of the conduit, so that the attachment process is simplified.
摘要翻译：集成传感器装置包括组合在一起的第一和第二壳体，并且经由其接合部附接到导管的壁。具体而言，第一壳体具有接合部和压力导通孔，并且在其中保持温度测量单元，用于检测在导管中流动的介质的温度。第二壳体在其中保持有压力测量单元，用于测量已经通过压力传导孔传导的介质的压力。因此，可以将多个测量单元（传感器）附接到导管的一部分，从而简化附接过程。

3. 发明授权

US5949118A Etching method for silicon substrates and semiconductor sensor 失效
标题翻译：硅衬底和半导体传感器的蚀刻方法
公开(公告)号：US5949118A
公开(公告)日：1999-09-07
申请号：US637128
申请日：1996-04-24
申请人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： G01L9/00 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

4. 发明授权

US5554881A Constitution of an electrode arrangement in a semiconductor element 失效
标题翻译：半导体元件中的电极布置的结构
公开(公告)号：US5554881A
公开(公告)日：1996-09-10
申请号：US357492
申请日：1994-12-15
申请人： Takahisa Koyasu , Kouji Numazaki , Hirokazu Kasuya , Mitsuhiro Saitou , Kazuhisa Ikeda
发明人： Takahisa Koyasu , Kouji Numazaki , Hirokazu Kasuya , Mitsuhiro Saitou , Kazuhisa Ikeda
IPC分类号： H01L23/485 , H01L29/70
CPC分类号： H01L24/05 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/45124 , H01L2224/45144 , H01L2224/4823 , H01L2224/4912 , H01L2224/49171 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01021 , H01L2924/01023 , H01L2924/01033 , H01L2924/01068 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10158 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/19043
摘要： At least four electrodes are provided on the same surface of a discrete transistor. Among these electrodes, one electrode is set as a base electrode, an electrode neighboring the base electrode in the up-and-down direction is set as an emitter electrode and an electrode neighboring the base electrode in the right-and-left direction is set as a collector electrode. On the same surface, a base electrode is provided at a position which is neither in the up-and-down direction nor in the right-and-left direction with respect to the base electrode. When the discrete transistor having this type of electrode arrangement is mounted on a substrate, one of the base electrodes formed on the substrate is connected to a first wiring, the collector electrode is connected to a second wiring, and the emitter electrode is connected to a third wiring.
摘要翻译：在分立晶体管的同一表面上设置至少四个电极。在这些电极中，将一个电极设置为基极，将与上下方向的基极相邻的电极设定为发射电极，并且设定与左右方向的基极相邻的电极作为集电极。在相同的表面上，基极相对于基极设置在既不在上下方向也不在左右方向上的位置。当具有这种类型的电极布置的分立晶体管安装在基板上时，形成在基板上的一个基极连接到第一布线，集电极连接到第二布线，并且发射极连接到第三线。

5. 发明授权

US5528214A Pressure-adjusting device for adjusting output of integrated pressure sensor 失效
标题翻译：用于调节集成压力传感器输出的调压装置
公开(公告)号：US5528214A
公开(公告)日：1996-06-18
申请号：US364993
申请日：1994-12-28
申请人： Kazuhiko Koga , Michitaka Hayashi , Kazuhisa Ikeda
发明人： Kazuhiko Koga , Michitaka Hayashi , Kazuhisa Ikeda
IPC分类号： G01L9/00 , G01L27/00 , G01L1/22
CPC分类号： G01L9/0042 , G01L19/0038 , G01L19/0084 , G01L19/141 , G01L27/005 , G01L9/0054 , Y10S148/028
摘要： A pressure-adjusting device for adjusting an output of an integrated pressure sensor in which a silicon wafer is joined onto a seat that has pressure-adjusting passages formed therein, and which has formed in the silicon wafer a signal processing circuit with an adjusting resistor for each chip, a thin diaphragm for each chip and a piezo-resistance layer for each chip. The pressure-adjusting device includes a pressure-setting stage on which the seat is placed, the pressure setting stage having pressure-adjusting passages formed therein to adjust a pressure exerted on the respective thin diaphragm via the pressure-adjusting passages formed in the seat. A holding member is arranged on the pressure-setting stage as to surround at least an outer periphery of the seat. A first elastic air-tight member is arranged on the pressure-setting stage as to surround the outer periphery of the seat and be held compressed by the pressure-setting stage and by the holding member. A second elastic air-tight member is arranged to surround the outer periphery on an upper surface of said silicon wafer or to surround the outer periphery of either the seat or the silicon wafer, and be held compressed by the seat or by the silicon wafer and the holding member.
摘要翻译：一种压力调节装置，用于调节其中硅晶片与其中形成有压力调节通道的座上接合的集成压力传感器的输出，并且在硅晶片中形成具有调节电阻器的信号处理电路每个芯片，每个芯片的薄膜片和每个芯片的压电层。压力调节装置包括设置座椅的压力调节阶段，压力调节阶段具有形成在其中的压力调节通道，以经由形成在座椅中的压力调节通道来调节施加在各个薄隔膜上的压力。保持构件布置在压力设定台上，以至少围绕座椅的外周。第一弹性气密构件布置在压力设定台上，以围绕座椅的外周并通过压力稳定阶段和保持构件保持压缩。第二弹性气密构件被布置成围绕所述硅晶片的上表面的外周围或者围绕座或硅晶片的外周，并被座椅或硅晶片压缩，持有成员。

6. 发明授权

US5289721A Semiconductor pressure sensor 失效
标题翻译：半导体压力传感器
公开(公告)号：US5289721A
公开(公告)日：1994-03-01
申请号：US756223
申请日：1991-09-09
申请人： Yukihiko Tanizawa , Hiroshi Okada , Kazuhisa Ikeda , Tsuyoshi Fukada
发明人： Yukihiko Tanizawa , Hiroshi Okada , Kazuhisa Ikeda , Tsuyoshi Fukada
IPC分类号： G01L9/00 , G01L7/08 , G01L9/06
CPC分类号： G01L9/0042 , G01L9/0054 , Y10T29/49103
摘要： A semiconductor pressure sensor comprises a silicon substrate having a surface orientation of substantially (110), a diaphragm formed from the substrate, strain gauges disposed on the diaphragm, and a base joined with the substrate. The diaphragm has an octagonal shape whose sides are orthogonal to axis , , and , respectively. This sensor causes substantially no output error and no fluctuation between output characteristics of the strain gauges irrespective of a change in temperature.
摘要翻译：半导体压力传感器包括具有基本上（110）的表面取向的硅衬底，由衬底形成的隔膜，设置在隔膜上的应变计和与衬底接合的基底。隔膜具有八边形，其侧面分别与轴线<100>，<110>和<111>正交。该传感器基本上不产生输出误差，并且不管温度变化如何，都不会产生应变计的输出特性之间的波动。

7. 发明授权

US06194236B1 Electrochemical etching method for silicon substrate having PN junction 有权
标题翻译：具有PN结的硅衬底的电化学蚀刻方法
公开(公告)号：US06194236B1
公开(公告)日：2001-02-27
申请号：US09247908
申请日：1999-02-11
申请人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： H01L2166
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

8. 发明授权

US5684428A Sensor apparatus capable of preventing high frequency noise 失效
标题翻译：能够防止高频噪声的传感器装置
公开(公告)号：US5684428A
公开(公告)日：1997-11-04
申请号：US552789
申请日：1995-11-03
申请人： Hiroshi Nomura , Kazuhisa Ikeda
发明人： Hiroshi Nomura , Kazuhisa Ikeda
IPC分类号： G01L9/04 , G01D3/028 , G01D3/032 , G01L1/22 , G01L9/00 , G01L9/06 , H03K5/00 , H03K17/14
CPC分类号： G01L19/0084 , G01D3/032 , G01L1/2268 , G01L19/148 , G01L9/06
摘要： A sensor apparatus is capable of removing RF noise. The sensor apparatus is comprised of a first power supply line connected to a power supply terminal; a second power supply line separately branched from the first power supply line and connected thereto; an output line; and a sensor circuit unit connected to the first power supply line so as to receive power therefrom, and for detecting a condition of an article under measurement to output a detection signal to the output line. In this sensor apparatus, the sensor circuit unit includes an operational amplifier operated by accepting the power supplied from the second power supply line, which performs the detection operation; a first filter circuit is connected to the first power supply line defined from a branch point between the first power supply line and the second power supply line to the first power supply line; a second filter circuit is connected to the second power supply line; and a third filter circuit is connected to the output line.
摘要翻译：传感器装置能够消除RF噪声。传感器装置包括连接到电源端的第一电源线; 第二电源线，与第一电源线分开并与其连接; 输出线以及传感器电路单元，连接到第一电源线以便从其接收电力，并且用于检测被测物品的状况以将检测信号输出到输出线。在该传感器装置中，传感器电路单元包括通过接受进行检测动作的从第二电源线供给的电力进行操作的运算放大器; 第一滤波电路连接到从第一电源线和第二电源线之间的分支点到第一电源线的第一电源线; 第二滤波电路连接到第二电源线; 并且第三滤波器电路连接到输出线。

9. 发明授权

US5421956A Method of fabricating an integrated pressure sensor 失效
标题翻译：制造集成压力传感器的方法
公开(公告)号：US5421956A
公开(公告)日：1995-06-06
申请号：US072758
申请日：1993-06-07
申请人： Kazuhiko Koga , Michitaka Hayashi , Kazuhisa Ikeda
发明人： Kazuhiko Koga , Michitaka Hayashi , Kazuhisa Ikeda
IPC分类号： G01L9/00 , G01L27/00 , H01L21/306
CPC分类号： G01L9/0042 , G01L19/0038 , G01L19/0084 , G01L19/141 , G01L27/005 , G01L9/0054 , Y10S148/028
摘要： A method of fabricating an integrated pressure sensor, which is capable of decreasing adverse effects caused by the distortion occurring at the time when a silicon wafer and a seat are joined together. On a silicon wafer 1 are formed a thin diaphragm 2 for each of the chips, a piezo-resitance layer for each of the chips, and a signal processing circuit with an adjusting resistor for each of the chips. The silicon wafer 1 is joined onto a glass seat 6 that has pressure-adjusting passges 7 formed therein to adjust the pressure exerted on the diaphragms 2 of the silicon wafer 1. Half-dicing is effected that reaches a predetermined depth of the glass seat 6 penetrating through the silicon wafer 1 for each of the chips, and resistance of the adjusting resistor is adjusted for each of the chips while adjusting the pressure applied to the diaphragms 2 via pressure-adjusting passages 7 in the seat in a step of adjusting the pressure sensitivity by trimming the wafer and by applying a negative pressure. Finally, the silicon wafer 1 and the glass seat 6 are cut by full-dicing for each of the chips.
摘要翻译：一种制造集成压力传感器的方法，其能够减少由硅晶片和座椅接合在一起时发生的失真引起的不利影响。在硅晶片1上形成用于每个芯片的薄膜2，用于每个芯片的压电层，以及具有用于每个芯片的调整电阻器的信号处理电路。将硅晶片1接合到具有形成在其中的压力调节通过部7的玻璃座6上，以调节施加在硅晶片1的隔膜2上的压力。达到玻璃座6的预定深度的半切割对于每个芯片穿透硅晶片1，并且通过调节压力的步骤中的压力调节通道7调节施加到隔膜2的压力，调整每个芯片的调整电阻器的电阻通过修整晶片并施加负压来实现灵敏度。最后，通过用于每个芯片的全切割来切割硅晶片1和玻璃座6。

10. 发明授权

US5386730A Pressure sensor having a sealed water-resistant construction 失效
标题翻译：压力传感器具有密封防水结构
公开(公告)号：US5386730A
公开(公告)日：1995-02-07
申请号：US80216
申请日：1993-06-23
申请人： Kazuhisa Ikeda , Minoru Tokuhara , Hironobu Baba
发明人： Kazuhisa Ikeda , Minoru Tokuhara , Hironobu Baba
IPC分类号： G01D11/24 , G01L9/00 , G01L19/06 , G01L7/00
CPC分类号： G01L19/142 , G01D11/245 , G01L19/0038 , G01L19/0084 , G01L19/0672
摘要： A pressure sensor has a housing (1). The housing accommodates a pressure sensing element (2) and a wiring board (3). The wiring board incorporates a lead irame (14). The lead frame connects output terminals (21) of the sensing element with ends of connector pins (12). A pressure guide (4) has a pressure path (41) and a flange (44). The flange is inserted in an opening of the housing with the pressure path being airtightly connected to a pressure intake (22) extending from the sensing element and with an end face (4a) of the flange being spaced apart from the wiring board. Potting material (5) coats the sensing element, the wiring board, and the flange of the pressure guide in the housing. If the potting material peels off the flange, water may penetrate the peeled part and reach the end face of the flange. The water, however, never reaches the wiring board because the end face of the flange is spaced apart from the wiring board. Accordingly, the lead frame in the wiring board is free from water and no migration is caused.
摘要翻译：压力传感器具有壳体（1）。壳体容纳压力感测元件（2）和接线板（3）。接线板包含引线ir（14）。引线框架将感测元件的输出端子（21）连接到连接器引脚（12）的端部。压力引导件（4）具有压力通路（41）和凸缘（44）。凸缘插入壳体的开口中，压力路径气密地连接到从感测元件延伸的压力进口（22），并且凸缘的端面（4a）与布线板间隔开。灌封材料（5）涂覆感应元件，接线板和外壳中压力引导件的凸缘。如果灌封材料从法兰上剥离，水可能会穿透剥离的部分并到达法兰的端面。然而，由于法兰的端面与布线板间隔开，因此水不会到达布线板。因此，布线板中的引线框架不含水，不会引起迁移。

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